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Author
Title
Year
Publication
Volume
Times cited
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Lu, A.K.A.
;
Pourtois, G.
;
Agarwal, T.
;
Afzalian, A.
;
Radu, I.P.
;
Houssa, M.
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study
2016
Applied physics letters
108
4
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