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Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
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Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
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Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Place of Publication |
Oxford |
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Wos |
000167727200026 |
Publication Date |
2002-10-14 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1369-8001; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
2.359 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
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Call Number |
UA @ lucian @ c:irua:94967 |
Serial  |
343 |
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Author |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
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Title |
Characterization of nickel silicides using EELS-based methods |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Journal of microscopy |
Abbreviated Journal |
J Microsc-Oxford |
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Volume |
240 |
Issue |
1 |
Pages |
75-82 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The characterization of Ni-silicides using electron energy loss spectroscopy (EELS) based methods is discussed. A series of Ni-silicide phases is examined: Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2. The composition of these phases is determined by quantitative core-loss EELS. A study of the low loss part of the EELS spectrum shows that both the energy and the shape of the plasmon peak are characteristic for each phase. Examination of the Ni-L edge energy loss near edge structure (ELNES) shows that the ratio and the sum of the L2 and L3 white line intensities are also characteristic for each phase. The sum of the white line intensities is used to determine the trend in electron occupation of the 3d states of the phases. The dependence of the plasmon energy on the electron occupation of the 3d states is demonstrated. |
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Place of Publication |
Oxford |
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Wos |
000281715400009 |
Publication Date |
2010-05-20 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-2720; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.692 |
Times cited |
11 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.692; 2010 IF: 1.872 |
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Call Number |
UA @ lucian @ c:irua:84879 |
Serial |
329 |
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Author |
Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.; |
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Title |
Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Philosophical magazine |
Abbreviated Journal |
Philos Mag |
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Volume |
86 |
Issue |
32 |
Pages |
5137-5151 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Place of Publication |
London |
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Wos |
000239756300010 |
Publication Date |
2006-07-27 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1478-6435;1478-6443; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.505 |
Times cited |
12 |
Open Access |
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Notes |
Bil 01/73 |
Approved |
Most recent IF: 1.505; 2006 IF: 1.354 |
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Call Number |
UA @ lucian @ c:irua:60895 |
Serial |
315 |
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Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
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Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
481-484 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Publication Date |
0000-00-00 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
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