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Author | Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.; Buchal, C. | ||||
Title | Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation | Type | A1 Journal article | ||
Year | 2001 | Publication | Journal of crystal growth | Abbreviated Journal | J Cryst Growth |
Volume | 222 | Issue | 3 | Pages | 558-564 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Amsterdam | Editor | ||
Language | Wos | 000166701500020 | Publication Date | 2002-07-25 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0022-0248; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.751 | Times cited | 12 | Open Access | |
Notes | Approved | Most recent IF: 1.751; 2001 IF: 1.283 | |||
Call Number | UA @ lucian @ c:irua:104211 | Serial ![]() |
3240 | ||
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