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Author Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. pdf  doi
openurl 
  Title The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma Type A1 Journal article
  Year 2012 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 21 Issue 2 Pages 025008-025008,13  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron behaviour in an Ar/CF4 inductively coupled plasma is investigated by a Langmuir probe and a hybrid model. The simulated and measured results include electron density, temperature and electron energy distribution function for different values of Ar/CF4 ratio, coil power and gas pressure. The hybrid plasma equipment model simulations show qualitative agreement with experiment. The effect of F2 electron attachment on the electron behaviour is explored by comparing two sets of data based on different F atom boundary conditions. It is demonstrated that electron attachment at F2 molecules is responsible for the depletion of low-energy electrons, causing a density decrease as well as a temperature increase when CF4 is added to an Ar plasma.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000302779400022 Publication Date 2012-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 23 Open Access  
  Notes Approved Most recent IF: 3.302; 2012 IF: 2.515  
  Call Number UA @ lucian @ c:irua:96549 Serial 841  
Permanent link to this record
 

 
Author Liu, Y.-X.; Zhang, Q.-Z.; Liu, L.; Song, Y.-H.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Electron bounce resonance heating in dual-frequency capacitively coupled oxygen discharges Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025012-11  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron bounce resonance heating (BRH) in dual-frequency capacitively coupled plasmas operated in oxygen is studied by different experimental methods and a particle-in-cell/Monte Carlo collision (PIC/MCC) simulation, and compared with the electropositive argon discharge. In comparison with argon, the experimental results show that in an oxygen discharge the resonance peaks in positive-ion density and light intensity tend to occur at larger electrode gaps. Moreover, at electrode gaps L > 2.5 cm, the positive-ion (and electron) density and the light emission drop monotonically in the oxygen discharge upon increasing L, whereas they rise (after an initial drop) in the argon case. At resonance gap the electronegativity reaches its maximum due to the BRH. All these experimental observations are explained by PIC/MCC simulations, which show that in the oxygen discharge the bulk electric field becomes quite strong and is out of phase with the sheath field. Therefore, it retards the resonance electrons when traversing the bulk, resulting in a suppressed BRH. Both experiment and simulation results show that this effect becomes more pronounced at lower high-frequency power, when the discharge mode changes from electropositive to electronegative. In a pure oxygen discharge, the BRH is suppressed with increasing pressure and almost diminishes at 12 Pa. Finally, the driving frequency significantly affects the BRH, because it determines the phase relation between bulk electric field and sheath electric field.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000317275400014 Publication Date 2013-03-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 20 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106534 Serial 911  
Permanent link to this record
 

 
Author Yan, M.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. doi  openurl
  Title Electron energy distribution function in capacitively coupled RF discharges: differences between electropositive Ar and electronegative SiH4 discharges Type A1 Journal article
  Year 2000 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 9 Issue Pages 583-591  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000165341000015 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 21 Open Access  
  Notes Approved Most recent IF: 3.302; 2000 IF: 1.963  
  Call Number UA @ lucian @ c:irua:34071 Serial 929  
Permanent link to this record
 

 
Author Van Laer, K.; Tinck, S.; Samara, V.; de Marneffe, J.F.; Bogaerts, A. pdf  doi
openurl 
  Title Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma : modeling and experimental investigation Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025011-25019  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, we investigate the etch process of so-called low-k organic material by means of a N2/H2 capacitively coupled plasma, as applied in the micro-electronics industry for the manufacturing of computer chips. In recent years, such an organic material has emerged as a possible alternative for replacing bulk SiO2 as a dielectric material in the back-end-of-line, because of the smaller parasitic capacity between adjacent conducting lines, and thus a faster propagation of the electrical signals throughout the chip. Numerical simulations with a hybrid plasma model, using an extensive plasma and surface chemistry set, as well as experiments are performed, focusing on the plasma properties as well as the actual etching process, to obtain a better insight into the underlying mechanisms. Furthermore, the effects of gas pressure, applied power and gas composition are investigated to try to optimize the etch process. In general, the plasma density reaches a maximum near the wafer edge due to the so-called 'edge effect'. As a result, the etch rate is not uniform but will also reach its maximum near the wafer edge. The pressure seems not to have a big effect. A higher power increases the etch rate, but the uniformity becomes (slightly) worse. The gas mixing ratio has no significant effect on the etch process, except when a pure H2 or N2 plasma is used, illustrating the synergistic effects of a N2/H2 plasma. In fact, our calculations reveal that the N2/H2 plasma entails an ion-enhanced etch process. The simulation results are in reasonable agreement with the experimental values. The microscopic etch profile shows the desired anisotropic shape under all conditions under study.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000317275400013 Publication Date 2013-03-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106654 Serial 1084  
Permanent link to this record
 

 
Author Kozák, T.; Bogaerts, A. pdf  url
doi  openurl
  Title Evaluation of the energy efficiency of CO2 conversion in microwave discharges using a reaction kinetics model Type A1 Journal article
  Year 2015 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 24 Issue 24 Pages 015024  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We use a zero-dimensional reaction kinetics model to simulate CO2 conversion in microwave discharges where the excitation of the vibrational levels plays a significant role in the dissociation kinetics. The model includes a description of the CO2 vibrational kinetics, taking into account state-specific VT and VV relaxation reactions and the effect of vibrational excitation on other chemical reactions. The model is used to simulate a general tubular microwave reactor, where a stream of CO2 flows through a plasma column generated by microwave radiation. We study the effects of the internal plasma parameters, namely the reduced electric field, electron density and the total specific energy input, on the CO2 conversion and its energy efficiency. We report the highest energy efficiency (up to 30%) for a specific energy input in the range 0.41.0 eV/molecule and a reduced electric field in the range 50100 Td and for high values of the electron density (an ionization degree greater than 10−5). The energy efficiency is mainly limited by the VT relaxation which contributes dominantly to the vibrational energy losses and also contributes significantly to the heating of the reacting gas. The model analysis provides useful insight into the potential and limitations of CO2 conversion in microwave discharges.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000348298200025 Publication Date 2014-12-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 100 Open Access  
  Notes Approved Most recent IF: 3.302; 2015 IF: 3.591  
  Call Number c:irua:122243 Serial 1087  
Permanent link to this record
 

 
Author Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. pdf  doi
openurl 
  Title Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 1 Pages 015017-15018  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a hybrid model is used to investigate the effect of different gas ratios on the Si etching and polymer film deposition characteristics in an Ar/CF4 inductively coupled plasma. The influence of the surface processes on the bulk plasma properties is studied, and also the spatial characteristics of important gas phase and etched species. The densities of F and CF2 decrease when the surface module is included in the simulations, due to the species consumption caused by etching and polymer deposition. The influence of the surface processes on the bulk plasma depends on the Ar/CF4 gas ratio. The deposited polymer becomes thicker at high CF4 content because of more abundant CFx radicals. As a result of the competition between the polymer thickness and the F flux, the etch rate first increases and then decreases upon increasing the CF4 content. The electron properties, more specifically the electron density profile, affect the Si etch characteristics substantially by determining the radical density and flux profiles. In fact, the radial profile of the etch rate is more uniform at low CF4 content since the electron density has a smooth distribution. At high CF4 content, the etch rate is less uniform with a minimum halfway along the wafer radius, because the electron density distribution is more localized. Therefore, our calculations predict that it is better to work at relatively high Ar/CF4 gas ratios, in order to obtain high etch rate and good profile uniformity for etch applications. This, in fact, corresponds to the typical experimental etch conditions in Ar/CF4 gas mixtures as found in the literature, where Ar is typically present at a much higher concentration than CF4.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000314966300022 Publication Date 2012-12-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 11 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:102583 Serial 1320  
Permanent link to this record
 

 
Author Zhang, Q.-Z.; Liu, Y.-X.; Jiang, W.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Heating mechanism in direct current superposed single-frequency and dual-frequency capacitively coupled plasmas Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025014-25018  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work particle-in-cell/Monte Carlo collision simulations are performed to study the heating mechanism and plasma characteristics in direct current (dc) superposed radio-frequency (RF) capacitively coupled plasmas, operated both in single-frequency (SF) and dual-frequency (DF) regimes. An RF (60/2 MHz) source is applied on the bottom electrode to sustain the discharge, and a dc source is fixed on the top electrode. The heating mechanism appears to be very different in dc superposed SF and DF discharges. When only a single source of 60 MHz is applied, the plasma bulk region is reduced by the dc source, thus the ionization rate and hence the electron density decrease with rising dc voltage. However, when a DF source of 60 and 2 MHz is applied, the electron density can increase upon addition of a dc voltage, depending on the gap length and applied dc voltage. This is explained from the spatiotemporal ionization rates in the DF discharge. In fact, a completely different behavior is observed for the ionization rate in the two half-periods of the LF source. In the first LF half-period, the situation resembles the dc superposed SF discharge, and the reduced plasma bulk region due to the negative dc bias results in a very small effective discharge area and a low ionization rate. On the other hand, in the second half-period, the negative dc bias is to some extent counteracted by the LF voltage, and the sheath close to the dc electrode becomes particularly thin. Consequently, the amplitude of the high-frequency sheath oscillations at the top electrode is largely enhanced, while the LF sheath at the bottom electrode is in its expanding phase and can thus well confine the high-energy electrons. Therefore, the ionization rate increases considerably in this second LF half-period. Furthermore, in addition to the comparison between SF and DF discharges and the effect of gap length and dc voltage, the effect of secondary electrons is examined.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000317275400016 Publication Date 2013-03-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106877 Serial 1413  
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Author Bogaerts, A.; Okhrimovskyy, A.; Baguer, N.; Gijbels, R. doi  openurl
  Title Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux Type A1 Journal article
  Year 2005 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 14 Issue Pages 191-200  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000227652500021 Publication Date 2005-02-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.302; 2005 IF: 1.798  
  Call Number UA @ lucian @ c:irua:50478 Serial 1480  
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Author Bogaerts, A.; Gijbels, R. doi  openurl
  Title The ion- and atom-induced secondary electron emission yield: numerical study for the effect of clean and dirty cathode surfaces Type A1 Journal article
  Year 2002 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 11 Issue Pages 27-36  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000174336300003 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 51 Open Access  
  Notes Approved Most recent IF: 3.302; 2002 IF: 1.816  
  Call Number UA @ lucian @ c:irua:40184 Serial 1739  
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Author Tinck, S.; Boullart, W.; Bogaerts, A. pdf  doi
openurl 
  Title Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating Type A1 Journal article
  Year 2011 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 20 Issue 4 Pages 045012-045012,19  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000295829800014 Publication Date 2011-06-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 22 Open Access  
  Notes Approved Most recent IF: 3.302; 2011 IF: 2.521  
  Call Number UA @ lucian @ c:irua:91045 Serial 2141  
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Author Georgieva, V.; Bogaerts, A. doi  openurl
  Title Plasma characteristics of an Ar/CF4/N2 discharge in an asymmetric dual frequency reactor: numerical investigation by a PIC/MC model Type A1 Journal article
  Year 2006 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 15 Issue Pages 368-377  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000240655500010 Publication Date 2006-04-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 35 Open Access  
  Notes Approved Most recent IF: 3.302; 2006 IF: 2.346  
  Call Number UA @ lucian @ c:irua:57550 Serial 2630  
Permanent link to this record
 

 
Author Van Gaens, W.; Bogaerts, A. pdf  doi
openurl 
  Title Reaction pathways of biomedically active species in an Ar plasma jet Type A1 Journal article
  Year 2014 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 23 Issue 3 Pages 035015-35027  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper we analyse the gas phase production and loss pathways for several biomedically active species, i.e. N2(A), O, O3, O2(a), N, H, HO2, OH, NO, NO2, N2O5, H2O2, HNO2 and HNO3, in an argon plasma jet flowing into an open humid air atmosphere. For this purpose, we employ a zero-dimensional reaction kinetics model to mimic the typical experimental conditions by fitting several parameters to experimentally measured values. These include ambient air diffusion, the gas temperature profile and power deposition along the jet effluent. We focus in detail on how the pathways of the biomedically active species change as a function of the position in the effluent, i.e. inside the discharge device, active plasma jet effluent and afterglow region far from the nozzle. Moreover, we demonstrate how the reaction kinetics and species production are affected by different ambient air humidities, total deposited power into the plasma and gas temperature along the jet. It is shown that the dominant pathways can drastically change as a function of the distance from the nozzle exit or experimental conditions.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000337891900017 Publication Date 2014-05-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 34 Open Access  
  Notes Approved Most recent IF: 3.302; 2014 IF: 3.591  
  Call Number UA @ lucian @ c:irua:117075 Serial 2820  
Permanent link to this record
 

 
Author Oleshko, V.P.; Gijbels, R.H.; Jacob, W.A. openurl 
  Title Reduction of composite Ag(Br,I) grains as studied by AEM and digital image analysis techniques Type P1 Proceeding
  Year 1998 Publication Abbreviated Journal  
  Volume Issue Pages 657-658  
  Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000077020300317 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:24917 Serial 2853  
Permanent link to this record
 

 
Author Kozák, T.; Bogaerts, A. pdf  doi
openurl 
  Title Splitting of CO2 by vibrational excitation in non-equilibrium plasmas : a reaction kinetics model Type A1 Journal article
  Year 2014 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 23 Issue 4 Pages 045004  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We present a zero-dimensional kinetic model of CO2 splitting in non-equilibrium plasmas. The model includes a description of the CO2 vibrational kinetics (25 vibrational levels up to the dissociation limit of the molecule), taking into account state-specific VT and VV relaxation reactions and the effect of vibrational excitation on other chemical reactions. The model is applied to study the reaction kinetics of CO2 splitting in an atmospheric-pressure dielectric barrier discharge (DBD) and in a moderate-pressure microwave discharge. The model results are in qualitative agreement with published experimental works. We show that the CO2 conversion and its energy efficiency are very different in these two types of discharges, which reflects the important dissociation mechanisms involved. In the microwave discharge, excitation of the vibrational levels promotes efficient dissociation when the specific energy input is higher than a critical value (2.0 eV/molecule under the conditions examined). The calculated energy efficiency of the process has a maximum of 23%. In the DBD, vibrationally excited levels do not contribute significantly to the dissociation of CO2 and the calculated energy efficiency of the process is much lower (5%).  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000345761500014 Publication Date 2014-06-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 170 Open Access  
  Notes Approved Most recent IF: 3.302; 2014 IF: 3.591  
  Call Number UA @ lucian @ c:irua:117398 Serial 3108  
Permanent link to this record
 

 
Author Oleshko, V.P.; van Daele, A.J.; Gijbels, R.H.; Jacob, W.A. openurl 
  Title Study of electron excitations in Ag(Br,I) nanocrystals by cryo-AEM techniques Type P1 Proceeding
  Year 1998 Publication Abbreviated Journal  
  Volume Issue Pages 659-660  
  Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000077020300318 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:24915 Serial 3329  
Permanent link to this record
 

 
Author Gijbels, R. openurl 
  Title The many faces of TOF-SIMS for the characterization of solid (sub)surfaces Type P3 Proceeding
  Year 2003 Publication Abbreviated Journal  
  Volume Issue Pages 101-104  
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Indian Society for Mass Spectrometry Place of Publication Mumbai Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:51977 Serial 1943  
Permanent link to this record
 

 
Author Adelmann, C.; Wen, L.G.; Peter, A.P.; Pourtois, G.; et al. openurl 
  Title Alternative metals for advanced interconnects Type P1 Proceeding
  Year 2014 Publication 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) Abbreviated Journal  
  Volume Issue Pages 173-175  
  Keywords P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We discuss the selection criteria for alternative metals in order to fulfill the requirements necessary for interconnects at half pitch values below 10 nm. The performance of scaled interconnects using transition metal germanides and CoAl alloys as metallization are studied and compared to conventional Cu and W interconnects.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Ieee Place of Publication New york Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 978-1-4799-5018-8 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:127033 Serial 91  
Permanent link to this record
 

 
Author Sankaran, K.; Clima, S.; Mees, M.; Adelmann, C.; Tokei, Z.; Pourtois, G. openurl 
  Title Exploring alternative metals to Cu and W for interconnects : an ab initio Insight Type P1 Proceeding
  Year 2014 Publication 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) Abbreviated Journal  
  Volume Issue Pages 193-195  
  Keywords P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The properties of alternative metals to Cu and W for interconnect applications are reviewed based on first-principles simulations and benchmarked in terms of intrinsic bulk resistivity and electromigration.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Ieee Place of Publication New york Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 978-1-4799-5018-8 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:127034 Serial 1149  
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Author van Vaeck, L.; van Espen, P.; Gijbels, R.; Baykut, G.; Laukien, F.H. doi  openurl
  Title A new electrostatic transfer line for improved transmission in Fourier transform laser microprobe mass spectrometry with external ion source Type A1 Journal article
  Year 2000 Publication European mass spectrometry Abbreviated Journal Eur Mass Spectrom  
  Volume 6 Issue Pages 277-287  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Chemometrics (Mitac 3)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) I.M. Place of Publication Chichester Editor  
  Language Wos 000165327900008 Publication Date 2007-12-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1356-1049; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 10 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34088 Serial 2312  
Permanent link to this record
 

 
Author Adams, F.; Gijbels, R.; Van Grieken, R.; Dachang, Z. openurl 
  Title Inorganic mass spectrometry Type MA3 Book as author
  Year 1993 Publication Abbreviated Journal  
  Volume Issue Pages 391 p.  
  Keywords MA3 Book as author; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Fudan University Press Place of Publication Shanghai Editor  
  Language Wos Publication Date  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:34086 Serial 4522  
Permanent link to this record
 

 
Author Adams, F.; Gijbels, R.; van Grieken, R.; Kim, Y.-sang isbn  openurl
  Title Inorganic mass spectrometry Type ME3 Book as editor
  Year 1999 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords ME3 Book as editor; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Freedom Academy Press Place of Publication Seoul Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 89-7338-200-4 Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34087 Serial 1669  
Permanent link to this record
 

 
Author van Vaeck, L.; Gijbels, R. openurl 
  Title Identification des substances inorganiques et organiques en surface des solides par la microsonde laser Type H3 Book chapter
  Year 1992 Publication Abbreviated Journal  
  Volume Issue Pages 27-53  
  Keywords H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Eyrolles Place of Publication Paris Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:4205 Serial 1546  
Permanent link to this record
 

 
Author Zhang, H.; Wang, W.; Li, X.; Han, L.; Yan, M.; Zhong, Y.; Tu, X. pdf  url
doi  openurl
  Title Plasma activation of methane for hydrogen production in a N2 rotating gliding arc warm plasma : a chemical kinetics study Type A1 Journal article
  Year 2018 Publication Chemical engineering journal Abbreviated Journal Chem Eng J  
  Volume 345 Issue 345 Pages 67-78  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a chemical kinetics study on methane activation for hydrogen production in a warm plasma, i.e., N-2 rotating gliding arc (RGA), was performed for the first time to get new insights into the underlying reaction mechanisms and pathways. A zero-dimensional chemical kinetics model was developed, which showed a good agreement with the experimental results in terms of the conversion of CH4 and product selectivities, allowing us to get a better understanding of the relative significance of various important species and their related reactions to the formation and loss of CH4, H-2, and C2H2 etc. An overall reaction scheme was obtained to provide a realistic picture of the plasma chemistry. The results reveal that the electrons and excited nitrogen species (mainly N-2(A)) play a dominant role in the initial dissociation of CH4. However, the H atom induced reaction CH4+ H -> CH3+ H-2, which has an enhanced reaction rate due to the high gas temperature (over 1200 K), is the major contributor to both the conversion of CH4 and H-2 production, with its relative contributions of > 90% and > 85%, respectively, when only considering the forward reactions. The coexistence and interaction of thermochemical and plasma chemical processes in the rotating gliding arc warm plasma significantly enhance the process performance. The formation of C-2 hydrocarbons follows a nearly one-way path of C2H6 -> C2H4 -> C2H2, explaining why the selectivities of C-2 products decreased in the order of C2H2 > C2H4 > C2H6.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Sequoia Place of Publication Lausanne Editor  
  Language Wos 000430696500008 Publication Date 2018-03-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1385-8947; 1873-3212 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 6.216 Times cited 25 Open Access OpenAccess  
  Notes Approved Most recent IF: 6.216  
  Call Number UA @ lucian @ c:irua:151450 Serial 5036  
Permanent link to this record
 

 
Author de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. doi  openurl
  Title Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks Type A1 Journal article
  Year 2003 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 203 Issue Pages 523-526  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000180527300119 Publication Date 2002-12-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 15 Open Access  
  Notes Approved Most recent IF: 3.387; 2003 IF: 1.284  
  Call Number UA @ lucian @ c:irua:51975 Serial 1743  
Permanent link to this record
 

 
Author Verlinden, G.; Gijbels, R.; Geuens, I.; de Keyzer, R. openurl 
  Title Chemical surface characterization of complex AgX microcrystals by imaging TOF-SIMS and dual beam depth profiling Type P3 Proceeding
  Year 2000 Publication Abbreviated Journal  
  Volume Issue Pages 213-216  
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34081 Serial 353  
Permanent link to this record
 

 
Author Janssens, K.; Bogaerts, A.; van Grieken, R. openurl 
  Title Colloquium Spectroscopicum Internationale 34: a collection of papers presented at the Colloquium Spectroscopicum Internationale, Antwerp, Belgium, 4-9 September 2005 Type ME3 Book as editor
  Year 2006 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords ME3 Book as editor; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:61092 Serial 391  
Permanent link to this record
 

 
Author Bogaerts, A.; Janssens, K.; van Grieken, R. openurl 
  Title Colloquium Spectroscopicum Internationale 34 (CSI 34), Antwerp, Belgium, 4-9 September 2005 Type ME3 Book as editor
  Year 2006 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords ME3 Book as editor; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:58858 Serial 394  
Permanent link to this record
 

 
Author Shazali, I.; Van 't dack, L.; Gijbels, R. openurl 
  Title Preconcentration of precious metals by tellurium sulphide fire-assay followed by instrumental neutron activation analysis Type P3 Proceeding
  Year 1988 Publication Abbreviated Journal  
  Volume Issue Pages 29-42  
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Barking Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:111513 Serial 2693  
Permanent link to this record
 

 
Author de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. openurl 
  Title Study of oxynitrides with dual beam TOF-SIMS Type P3 Proceeding
  Year 2000 Publication Abbreviated Journal  
  Volume Issue Pages 611-614  
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34082 Serial 3330  
Permanent link to this record
 

 
Author Lenaerts, J.; Verlinden, G.; van Vaeck, L.; Gijbels, R.; Geuens, I. openurl 
  Title TOF-SIMS analysis of carbocyanine dyes adsorbed on silver substrates Type P3 Proceeding
  Year 2000 Publication Abbreviated Journal  
  Volume Issue Pages 115-118  
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) Elsevier Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34080 Serial 3669  
Permanent link to this record
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