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Author Milovanović, S.P.; Masir, M.R.; Peeters, F.M.
Title Spectroscopy of snake states using a graphene Hall bar Type A1 Journal article
Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 103 Issue 23 Pages 233502-233504
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract An approach to observe snake states in a graphene Hall bar containing a pn-junction is proposed. The magnetic field dependence of the bend resistance in a ballistic graphene Hall bar structure containing a tilted pn-junction oscillates as a function of applied magnetic field. We show that each oscillation is due to a specific snake state that moves along the pn-interface. Furthermore, depending on the value of the magnetic field and applied potential, we can control the lead in which the electrons will end up and hence control the response of the system.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000328634900090 Publication Date 2013-12-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 15 Open Access
Notes This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN and the Methusalem Foundation of the Flemish government. Approved Most recent IF: 3.411; 2013 IF: 3.515
Call Number UA @ lucian @ c:irua:113710 Serial 3074
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Author Wu, Z.; Peeters, F.M.; Chang, K.
Title Spin and momentum filtering of electrons on the surface of a topological insulator Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 16 Pages 162101,1-162101,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically the transport properties of Dirac fermions on the surface of a three-dimensional topological insulator. Dirac electrons can be totally reflected in front of a magnetic/electric p-n junction. For a p-n-p structure, multiple total internal reflections at the interfaces result in the bound states in the channel, which behaves like an electronic waveguide. This p-n-p like structure exhibits spin and momentum filtering features and could be used as a spin and/or charge diode.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000289842700032 Publication Date 2011-04-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 33 Open Access
Notes ; ; Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:89971 Serial 3076
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Author Shakouri, K.; Vasilopoulos, P.; Vargiamidis, V.; Hai, G.-Q.; Peeters, F.M.
Title Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 104 Issue 21 Pages 213109
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We study the commensurability oscillations in silicene subject to a perpendicular electric field E-z, a weak magnetic field B, and a weak periodic potential V = V-0 cos(Cy); C = 2 pi/a(0) with a(0) its period. The field E-z and/or the modulation lift the spin degeneracy of the Landau levels and lead to spin and valley resolved Weiss oscillations. The spin resolution is maximal when the field E-z is replaced by a periodic one E-z = E-0 cos(Dy); D = 2 pi/b(0), while the valley one is maximal for b(0) = a(0). In certain ranges of B values, the current is fully spin or valley polarized. Additional quantum Hall conductivity plateaux arise due to spin and valley intra-Landau-level transitions. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000337143000047 Publication Date 2014-05-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 16 Open Access
Notes ; The work was supported by the Flemish Science Foundation (FWO-VI), the Methusalem Foundation of the Flemish Government, and by the Canadian NSERC Grant No. OGP0121756. Also, G. Q. H. was supported by FAPESP and CNPq (Brazil). ; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:118409 Serial 3078
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Author Molnar, B.; Vasilopoulos, P.; Peeters, F.M.
Title Spin-dependent transmission through a chain of rings : influence of a periodically modulated spin-orbit interaction strength or ring radius Type A1 Journal article
Year 2004 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 85 Issue 4 Pages 612-614
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We study ballistic electron transport through a finite chain of quantum circular rings in the presence of spin-orbit interaction of strength alpha. For a single ring, the transmission and reflection coefficients are obtained analytically and from them the conductance for a chain of rings as a function of alpha and of the wave vector k of the incident electron. We show that due to destructive spin interferences, the chain can be totally opaque for certain ranges of k, the width of which depends on the value of alpha. A periodic modulation of the strength alpha or of the ring radius widens the gaps considerably and produces a nearly binary conductance output. (C) 2004 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000222855400034 Publication Date 2004-07-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 26 Open Access
Notes Approved Most recent IF: 3.411; 2004 IF: 4.308
Call Number UA @ lucian @ c:irua:94799 Serial 3085
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Author Papp, G.; Peeters, F.M.
Title Spin filtering in a magnetic-potential barrier structures Type A1 Journal article
Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 78 Issue Pages 2184-2186
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000167881500031 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 234 Open Access
Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
Call Number UA @ lucian @ c:irua:37312 Serial 3089
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Author Papp, G.; Peeters, F.M.
Title Spin filtering in a magnetic-potential barrier structures: erratum Type A1 Journal article
Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 79 Issue Pages 3198
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000171896600062 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 104 Open Access
Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
Call Number UA @ lucian @ c:irua:37313 Serial 3090
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Author Yang, W.; Chang, K.; Peeters, F.M.
Title Spin-polarized transport of two-dimensional electron gas embedded in a diluted magnetic semiconductor Type A1 Journal article
Year 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 86 Issue 19 Pages 192107-3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The spin-polarized transport property of a diluted magnetic semiconductor two-dimensional electron gas is investigated theoretically at low temperature. A large current polarization can be found in this system even at small magnetic fields and oscillates with increasing magnetic field while the carrier polarization is vanishingly small. The magnitude as well as the sign of the current polarization can be tuned by varying magnetic field, the electron density and the Mn concentration. (c) 2005 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000229397900042 Publication Date 2005-05-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 10 Open Access
Notes Approved Most recent IF: 3.411; 2005 IF: 4.127
Call Number UA @ lucian @ c:irua:103163 Serial 3097
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Author Rauwel, E.; Dubourdieu, C.; Holländer, B.; Rochat, N.; Ducroquet, F.; Rossell, M.D.; Van Tendeloo, G.; Pelissier, B.
Title Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition Type A1 Journal article
Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 89 Issue 1 Pages 012902,1-012902,3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Addition of yttrium in HfO(2) thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO(2) is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH(3). (c) 2006 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000238849200046 Publication Date 2006-07-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 78 Open Access
Notes Medea T207 Approved Most recent IF: 3.411; 2006 IF: 3.977
Call Number UA @ lucian @ c:irua:59632 Serial 3138
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Author Torun, E.; Sahin, H.; Singh, S.K.; Peeters, F.M.
Title Stable half-metallic monolayers of FeCl2 Type A1 Journal article
Year 2015 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 106 Issue 106 Pages 192404
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The structural, electronic, and magnetic properties of single layers of Iron Dichloride (FeCl2) were calculated using first principles calculations. We found that the 1T phase of the single layer FeCl2 is 0.17 eV/unit cell more favorable than its 1H phase. The structural stability is confirmed by phonon calculations. We found that 1T-FeCl2 possess three Raman-active (130, 179, and 237 cm(-1)) and one infrared-active (279 cm(-1)) phonon branches. The electronic band dispersion of the 1T-FeCl2 is calculated using both gradient approximation of Perdew-Burke-Ernzerhof and DFT-HSE06 functionals. Both functionals reveal that the 1T-FeCl2 has a half-metallic ground state with a Curie temperature of 17 K. (C) 2015 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000355008100020 Publication Date 2015-05-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 84 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem foundation of the Flemish government. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. was supported by a FWO Pegasus Long Marie Curie Fellowship. ; Approved Most recent IF: 3.411; 2015 IF: 3.302
Call Number c:irua:126411 Serial 3143
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Author van Dyck, D.; Croitoru, M.D.
Title Statistical method for thickness measurement of amorphous objects Type A1 Journal article
Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 90 Issue 24 Pages 241911-241913
Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT); Vision lab
Abstract The authors propose a nondestructive method for the determination of the thickness of an amorphous sample. This method is based on the statistics of the phase of the electron exit wave function, which depend on the number of atoms traversed by the incident electron which itself is a function of the thickness of the object. The accuracy of this method has been checked numerically by the multislice method and compared with that based on the mean inner potential. (c) 2007 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000247305400033 Publication Date 2007-06-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 4 Open Access
Notes Fwo Approved Most recent IF: 3.411; 2007 IF: 3.596
Call Number UA @ lucian @ c:irua:102671 Serial 3158
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Author Santiso, J.; Pardo, J.A.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D.; Van Tendeloo, G.
Title Strain relaxation and oxygen superstructure modulation in epitaxial Sr4Fe6O13\pm\delta films Type A1 Journal article
Year 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 86 Issue 13 Pages 132105,1-3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000228422600050 Publication Date 2005-05-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 5 Open Access
Notes Iap V-1 Approved Most recent IF: 3.411; 2005 IF: 4.127
Call Number UA @ lucian @ c:irua:54806 Serial 3172
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Author Papp, G.; Peeters, F.M.
Title Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure (vol 81, pg 691, 2002) Type L1 Letter to the editor
Year 2003 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 82 Issue 20 Pages 3570-3570
Keywords L1 Letter to the editor; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000182823300065 Publication Date 2003-05-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 21 Open Access
Notes Approved Most recent IF: 3.411; 2003 IF: 4.049
Call Number UA @ lucian @ c:irua:103295 Serial 3185
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Author Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A.
Title Structural and vibrational properties of amorphous GeO2 from first-principles Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 20 Pages 202110,1-202110,3
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The structural and vibrational properties of amorphous germanium oxide (a-GeO<sub>2</sub>) are investigated using first-principles calculations based on density functional theory. We first generate an a-GeO<sub>2</sub> structure by first-principles molecular dynamics and analyze its structural properties. The vibrational spectra is then calculated within a density-functional approach. Both static and dynamic properties are in good agreement with experimental data. We next generate defects in our structure (oxygen vacancies with several density and charge states) and consider the most stable atomic configurations, focusing on the vibrational features of threefold coordinated O and divalent Ge centers.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000290812100038 Publication Date 2011-05-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 226 Open Access
Notes Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:90222 Serial 3202
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Author Leca, V.; Blank, D.H.A.; Rijnders, G.; Bals, S.; Van Tendeloo, G.
Title Superconducting single-phase Sr1-xLaxCuO2 thin films with improved crystallinity grown by pulsed laser deposition Type A1 Journal article
Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 89 Issue 9 Pages
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Sr1-xLaxCuO2-delta (x=0.10-0.20) thin films exhibiting an oxygen-deficient 2 root 2a(p)x2 root a(p) x c structure (a(p) and c represent the cell parameters of the perovskite subcell) were epitaxially grown by means of pulsed laser deposition in low-pressure oxygen ambient. (001) KTaO3 and (001) SrTiO3 single crystals were used as substrates, with BaTiO3 as buffer layer. The Sr1-xLaxCuO2-delta films were oxidized during cooling down in order to yield the infinite-layer-type structure. By applying this method, high quality single-phase Sr1-xLaxCuO2 thin films could be obtained for 0.10 <= x <= 0.175 doping range. The films grown on BaTiO3/KTaO3 show superconductivity for 0.15 <= x <= 0.175 with optimum doping at x=0.15, in contrast with previously reported data. (c) 2006 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000240236600077 Publication Date 2006-08-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 32 Open Access
Notes Fom; Fwo Approved Most recent IF: 3.411; 2006 IF: 3.977
Call Number UA @ lucian @ c:irua:60817 Serial 3366
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Author Chen, L.; Kirilenko, D.; Stesmans, A.; Nguyen, X.S.; Binnemans, K.; Goderis, B.; Vanacken, J.; Lebedev, O.; Van Tendeloo, G.; Moshchalkov, V.V.
Title Symmetry and electronic states of Mn2+ in ZnS nanowires with mixed hexagonal and cubic stacking Type A1 Journal article
Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 97 Issue 4 Pages 041918,1-041918,3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electron spin resonance and electronic spectroscopy techniques were used to study the symmetry and electronic structure of Mn2+ dopants in solvothermally synthesized ZnS nanowires. The average diameter of ∼ 5 nm leads to the observable quantum confinement effects in the photoluminescence excitation spectra. The results clearly demonstrate the three symmetry locations of Mn2+ incorporation. Together with the inferred Mn2+ center densities, these data indicate a much higher efficiency of Mn2+ substitution in the nanowire sample with about two times larger diameter.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000281059200038 Publication Date 2010-08-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 5 Open Access
Notes Methusalem Approved Most recent IF: 3.411; 2010 IF: 3.841
Call Number UA @ lucian @ c:irua:84869 Serial 3403
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Author Paul, M.; Kufer, D.; Müller, A.; Brück, S.; Goering, E.; Kamp, M.; Verbeeck, J.; Tian, H.; Van Tendeloo, G.; Ingle, N.J.C.; Sing, M.; Claessen, R.
Title Fe3O4/ZnO : a high-quality magnetic oxide-semiconductor heterostructure by reactive deposition Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 1 Pages 012512,1-012512,3
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We demonstrate the epitaxial growth of Fe<sub>3</sub>O<sub>4</sub> films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000286009800055 Publication Date 2011-01-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 27 Open Access
Notes The authors acknowledge financial support by DFG through Forschergruppe FOR 1162. Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:88653 Serial 3532
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Author Verbist, K.; Vasiliev, A.L.; Van Tendeloo, G.
Title Y2O3 inclusions in YBa2Cu3O7-\delta thin films Type A1 Journal article
Year 1995 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 66 Issue 11 Pages 1424-1426
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nanoprecipitates in YBa2Cu3O7‐δ(YBCO) thin films have been identified by high resolution electron microscopy (HREM) as Y2O3 inclusions; they correspond to two different types of epitaxial relationships namely [001] or [110] parallel to the YBCOc‐axis. The [001] precipitates are situated near the YBCO surface, in the bulk and on the YBCO film/substrate interface. The [110] precipitates have only been observed at the surface. Literature data have been reinterpreted.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos A1995QL57700042 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 28 Open Access
Notes Approved CHEMISTRY, PHYSICAL 54/144 Q2 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 9/35 Q2 #
Call Number UA @ lucian @ c:irua:13324 Serial 3564
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Author Gontard, L.C.; Jinschek, J.R.; Ou, H.; Verbeeck, J.; Dunin-Borkowski, R.E.
Title Three-dimensional fabrication and characterisation of core-shell nano-columns using electron beam patterning of Ge-doped SiO2 Type A1 Journal article
Year 2012 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 100 Issue 26 Pages 263113
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A focused electron beam in a scanning transmission electron microscope (STEM) is used to create arrays of core-shell structures in a specimen of amorphous SiO2 doped with Ge. The same electron microscope is then used to measure the changes that occurred in the specimen in three dimensions using electron tomography. The results show that transformations in insulators that have been subjected to intense irradiation using charged particles can be studied directly in three dimensions. The fabricated structures include core-shell nano-columns, sputtered regions, voids, and clusters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731765]
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000305831500081 Publication Date 2012-06-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 11 Open Access
Notes Approved Most recent IF: 3.411; 2012 IF: 3.794
Call Number UA @ lucian @ c:irua:100337 Serial 3651
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Author Nasirpouri, F.; Engbarth, M.A.; Bending, S.J.; Peter, L.M.; Knittel, A.; Fangohr, H.; Milošević, M.V.
Title Three-dimensional ferromagnetic architectures with multiple metastable states Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 22 Pages 222506,1-222506,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We demonstrate controllable dual-bath electrodeposition of nickel on architecture-tunable three-dimensional (3D) silver microcrystals. Magnetic hysteresis loops of individual highly faceted Ag-Ni core-shell elements reveal magnetization reversal that comprises multiple sharp steps corresponding to different stable magnetic states. Finite-element micromagnetic simulations on smaller systems show several jumps during magnetization reversal which correspond to transitions between different magnetic vortex states. Structures of this type could be realizations of an advanced magnetic data storage architecture whereby each element represents one multibit, storing a combination of several conventional bits depending on the overall number of possible magnetic states associated with the 3D core-shell shape.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000291405700044 Publication Date 2011-06-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes ; This work was supported by EPSRC in the U.K. under Grant Nos. EP/E039944/1 and EP/E040063/1, DYNAMAG project (EU FP7/2007-2013 Grant No. 233552), and FWO-Vlaanderen. ; Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:90008 Serial 3652
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Author Xavier, L.J.P.; Pereira, J.M.; Chaves, A.; Farias, G.A.; Peeters, F.M.
Title Topological confinement in graphene bilayer quantum rings Type A1 Journal article
Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 96 Issue 21 Pages 212108,1-212108,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We find localized electron and hole states in a ring-shaped potential kink in biased bilayer graphene. Within the continuum description, we show that for sharp potential steps the Dirac equation describing carrier states close to the K (or K′) point of the first Brillouin zone can be solved analytically for a circular kink/antikink dot. The solutions exhibit interfacial states which exhibit AharonovBohm oscillations as functions of the height of the potential step and/or the radius of the ring.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000278183200039 Publication Date 2010-05-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 29 Open Access
Notes ; This work was financially supported by CNPq, under Contract No. NanoBioEstruturas 555183/2005-0, FUNCAP, CAPES, the Bilateral program between Flanders and Brazil, the Belgian Science Policy (IAP) and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.411; 2010 IF: 3.841
Call Number UA @ lucian @ c:irua:83373 Serial 3675
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Author Du, G.H.; Yuan, Z.Y.; Van Tendeloo, G.
Title Transmission electron microscopy and electron energy-loss spectroscopy analysis of manganese oxide nanowires Type A1 Journal article
Year 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 86 Issue 6 Pages
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Single-crystalline MnOOH and Mn3O4 nanowires have been prepared by hydrothermal treatment of commercial bulky manganese oxide particles. beta-MnO2 and alpha-Mn2O3 nanowires were prepared by calcination of MnOOH nanowires. Transmission electron microscopy analysis demonstrates that MnOOH nanowires grow directly from MnO2 raw particles. The diameter of the nanowires is 20-70 nm, while the length can reach several micrometers. MnOOH nanowires grow preferentially along the [010] direction and Mn3O4 nanowires prefer to grow along the [001] direction; the long dimension of both beta-MnO2 and alpha-Mn2O3 nanowires is along [001]. Electron energy-loss spectroscopy analysis shows that the position of the prepeak of the oxygen K edge shifts to higher energy and the energy separation between the two main peaks of the oxygen K edge decreases with decreasing manganese oxidation state. The manganese-white-line ratios (L-3/L-2) were calculated. (C) 2005 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000227355200069 Publication Date 2005-02-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 46 Open Access
Notes Iap V-1 Approved Most recent IF: 3.411; 2005 IF: 4.127
Call Number UA @ lucian @ c:irua:59056 Serial 3704
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Author Leenaerts, O.; Partoens, B.; Peeters, F.M.
Title Tunable double Dirac cone spectrum in bilayer \alpha-graphyne Type A1 Journal article
Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 103 Issue 1 Pages 013105-4
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Monolayer alpha-graphyne was recently proposed as a new all-carbon material having an electronic spectrum consisting of Dirac cones. Based on a first-principles investigation of bilayer alpha-graphyne, we show that the electronic band structure is qualitatively different from its monolayer form and depends crucially on the stacking mode of the two layers. Two stable stacking modes are found: a configuration with a gapless parabolic band structure, similar to AB stacked bilayer graphene, and another one which exhibits a doubled Dirac-cone spectrum. The latter can be tuned by an electric field with a gap opening rate of 0.3 eA. (C) 2013 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000321497200032 Publication Date 2013-07-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 58 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the NOI-BOF of the University of Antwerp, and the ESF EuroGRAPHENE project CONGRAN. ; Approved Most recent IF: 3.411; 2013 IF: 3.515
Call Number UA @ lucian @ c:irua:109821 Serial 3740
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Author Liu, Y.; Cheng, F.; Li, X.J.; Peeters, F.M.; Chang, K.
Title Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 99 Issue 3 Pages 032102,1-032102,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the influence of the spin-orbit interactions (SOIs) on the electron distribution and the optical absorption of a two-electron quantum dot. It is shown that the interplay between the SOIs makes the two-electron quantum dot behave like two laterally coupled quantum dots and the anisotropic distribution can be rotated from [110] to [11®0] by reversing the direction of the perpendicular electric field and detect it through the optical absorption spectrum.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000293679000026 Publication Date 2011-07-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 8 Open Access
Notes ; This work was supported by NSFC Grants No. 16760525405, 10874175 and 11004017 and the Belgian Science Policy 168(IAP). ; Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:92473 Serial 3749
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Author Peelaers, H.; Hernández-Nieves, A.D.; Leenaerts, O.; Partoens, B.; Peeters, F.M.
Title Vibrational properties of graphene fluoride and graphane Type A1 Journal article
Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 98 Issue 5 Pages 051914
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The vibrational properties of graphene fluoride and graphane are studied using ab initio calculations. We find that both sp(3) bonded derivatives of graphene have different phonon dispersion relations and phonon densities of states as expected from the different masses associated with the attached atoms of fluorine and hydrogen, respectively. These differences manifest themselves in the predicted temperature behavior of the constant-volume specific heat of both compounds. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551712]
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000286988400027 Publication Date 2011-02-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 66 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-V1), the Belgian Science Policy (IAP), and the collaborative project FWO-MINCyT (Contract No. FW /08/01). A.D.H.-N. is also supported by ANPCyT (under Grant No. PICT2008-2236) ; Approved Most recent IF: 3.411; 2011 IF: 3.844
Call Number UA @ lucian @ c:irua:105604 Serial 3844
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Author Milošević, M.V.; Peeters, F.M.
Title Vortex manipulation in a superconducting matrix with view on applications Type A1 Journal article
Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 96 Issue 19 Pages 192501,1-192501,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We show how a single flux quantum can be effectively manipulated in a superconducting film with a matrix of blind holes. Such a sample can serve as a basic memory element, where the position of the vortex in a k×l matrix of pinning sites defines the desired combination of n bits of information (2n = k×l). Vortex placement is achieved by strategically applied current and the resulting position is read out via generated voltage between metallic contacts on the sample. Such a device can also act as a controllable source of a nanoengineered local magnetic field for, e.g., spintronics applications.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000277756400040 Publication Date 2010-05-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 14 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP), the ESF-NES and ESF-AQDJJ networks. ; Approved Most recent IF: 3.411; 2010 IF: 3.841
Call Number UA @ lucian @ c:irua:83657 Serial 3869
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Author Masir, M.R.; Vasilopoulos, P.; Peeters, F.M.
Title Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures Type A1 Journal article
Year 2008 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 93 Issue 24 Pages 242103,1-242103,3
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We show that the angular range of the transmission through magnetic barrier structures can be efficiently controlled in single-layer and bilayer graphenes and this renders the structures efficient wavevector filters. As the number of magnetic barriers increases, this range shrinks, the gaps in the transmission versus energy become wider, and the conductance oscillates with the Fermi energy.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000261896400032 Publication Date 2008-12-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 91 Open Access
Notes Approved Most recent IF: 3.411; 2008 IF: 3.726
Call Number UA @ lucian @ c:irua:75931 Serial 3910
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Author Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I.
Title Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? Type A1 Journal article
Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 79 Issue 22 Pages 3660-3662
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000172204400034 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 13 Open Access
Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
Call Number UA @ lucian @ c:irua:54801 Serial 3916
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Author Homm, P.; Dillemans, L.; Menghini, M.; Van Bilzen, B.; Bakalov, P.; Su, C.Y.; Lieten, R.; Houssa, M.; Nasr Esfahani, D.; Covaci, L.; Peeters, F.M.; Seo, J.W.; Locquet, J.P.;
Title Collapse of the low temperature insulating state in Cr-doped V2O3 thin films Type A1 Journal article
Year 2015 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 107 Issue 107 Pages 111904
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V2O3 single crystals. It is well-know that oxygen excess stabilizes a metallic state in V2O3 single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V2O3 films can be interesting candidates for field effect devices. (C) 2015 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000361639200020 Publication Date 2015-09-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 14 Open Access
Notes ; The authors acknowledge financial support from the FWO Project No. G052010N10 as well as the EU-FP7 SITOGA Project. P.H. acknowledges support from Becas Chile-CONICYT. ; Approved Most recent IF: 3.411; 2015 IF: 3.302
Call Number UA @ lucian @ c:irua:128728 Serial 4149
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Author Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W.
Title Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors Type A1 Journal article
Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 108 Issue 108 Pages 023506
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Conventional junctionless (JL) multi/gate (MuG) field-effect transistors (FETs) require extremely scaled channels to deliver high on-state current with low short-channel effect related leakage. In this letter, using ultra-thin 2D materials (e.g., monolayer MoS2), we present comparison of short-channel effects in JL, and inversion-mode (IM) FETs. We show that JL FETs exhibit better sub-threshold slope (S.S.) and drain-induced-barrier-lowering (DIBL) in comparison to IM FETs due to reduced peak electric field at the junctions. But, threshold voltage (VT) roll-off with channel length downscaling is found to be significantly higher in JL FETs than IM FETs, due to higher source/drain controlled charges (dE/dx) in the channel. Further, we show that although VT roll-off in JL FETs improves by increasing the gate control, i.e., by scaling the oxide, or channel thickness, the sensitivity of threshold voltage on structural parameters is found out to be high. (C) 2016 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000370258400056 Publication Date 2016-01-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 13 Open Access
Notes ; ; Approved Most recent IF: 3.411
Call Number UA @ lucian @ c:irua:132318 Serial 4152
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Author Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.;
Title On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films Type A1 Journal article
Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 108 Issue 108 Pages 082106
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In situ doped epitaxial Si: P films with P concentrations > 1 x 10(21) at./cm(3) are suitable for source-drain stressors of n-FinFETs. These films combine the advantages of high conductivity derived from the high P doping with the creation of tensile strain in the Si channel. It has been suggested that the tensile strain developed in the Si: P films is due to the presence of local Si3P4 clusters, which however do not contribute to the electrical conductivity. During laser annealing, the Si3P4 clusters are expected to disperse resulting in an increased conductivity while the strain reduces slightly. However, the existence of Si3P4 is not proven. Based on first-principles simulations, we demonstrate that the formation of vacancy centered Si3P4 clusters, in the form of four P atoms bonded to a Si vacancy, is thermodynamically favorable at such high P concentrations. We suggest that during post epi-growth annealing, a fraction of the P atoms from these clusters are activated, while the remaining part goes into interstitial sites, thereby reducing strain. We corroborate our conjecture experimentally using positron annihilation spectroscopy, electron spin resonance, and Rutherford backscattering ion channeling studies. (C) 2016 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000373057000023 Publication Date 2016-02-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 9 Open Access
Notes Approved Most recent IF: 3.411
Call Number UA @ lucian @ c:irua:133245 Serial 4217
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