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Author | Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. | ||||
Title | Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE | Type | A1 Journal article | ||
Year | 1999 | Publication | Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA | Abbreviated Journal | Physica B |
Volume | 273-4 | Issue | Pages | 140-143 | |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved. | ||||
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Corporate Author | Thesis | ||||
Publisher | Place of Publication | Amsterdam | Editor | ||
Language | Wos | 000084452200031 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 0921-4526; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.386 | Times cited | 5 | Open Access | |
Notes | Approved | Most recent IF: 1.386; 1999 IF: 0.725 | |||
Call Number | UA @ lucian @ c:irua:102892 | Serial | 2925 | ||
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