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Author Eeckhaoudt, S.; Van Grieken, R.E.; Cholewa, M.; Legge, G.J.F. doi  openurl
  Title Study of aluminium-exposed fish by scanning proton microprobe analysis Type A1 Journal article
  Year 1996 Publication (up) Microchimica acta Abbreviated Journal  
  Volume 122 Issue Pages 17-25  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1996TU79700002 Publication Date 2005-03-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-3672; 1436-5073 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:14640 Serial 8593  
Permanent link to this record
 

 
Author Worobiec, A.; Samek, L.; Spolnik, Z.; Kontozova, V.; Stefaniak, E.; Van Grieken, R. pdf  doi
openurl 
  Title Study of the winter and summer changes of the air composition in the church of Szalowa, Poland, related to conservation Type A1 Journal article
  Year 2006 Publication (up) Microchimica acta Abbreviated Journal  
  Volume 156 Issue 3/4 Pages 253-261  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Laboratory Experimental Medicine and Pediatrics (LEMP)  
  Abstract The St. Michael Archangel's Church in Szalowa, Poland, was selected for closer investigation with respect to the indoor/outdoor air exchange and its influence on the air quality and work arts preservation. Chemical composition, size and abundance of particulate matter and concentration of gases NO2, SO2, O-3 inside and outside the church were determined. To study seasonal variation of the weather condition (temperature, inversion level, wind direction) and the influence of seasonal sources of the air pollution (like heating of the nearby houses), samples were collected in winter and summer time. It was stated that suspended particulate matter inside the wooden church has in general an outdoor source. Several groups of particles were distinguished such as the organic ones, soil dust, nitrates and sulphates. In case of organic and soil dust particles, the concentration inside was higher than outside. From the results, in comparison to literature data, one can conclude that accumulation of particulate suspended matter in the church is more intense than in other types of buildings. Gaseous pollutants were detected but their concentration was negligible.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000242830500007 Publication Date 2006-06-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-3672; 1436-5073 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:61091 Serial 8609  
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
  Year 1999 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 45 Issue 2-3 Pages 277-282  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000081748600023 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.806 Times cited Open Access  
  Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815  
  Call Number UA @ lucian @ c:irua:95791 Serial 47  
Permanent link to this record
 

 
Author Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. pdf  doi
openurl 
  Title Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Type A1 Journal article
  Year 2005 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 80 Issue Pages 82-85  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000231517000021 Publication Date 2005-06-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.806; 2005 IF: 1.347  
  Call Number UA @ lucian @ c:irua:102729 Serial 222  
Permanent link to this record
 

 
Author Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. pdf  doi
openurl 
  Title First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts Type A1 Journal article
  Year 2005 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 80 Issue Pages 272-279  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000231517000062 Publication Date 2005-06-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 31 Open Access  
  Notes Approved Most recent IF: 1.806; 2005 IF: 1.347  
  Call Number UA @ lucian @ c:irua:95095 Serial 1199  
Permanent link to this record
 

 
Author Peeters, F.M.; Schweigert, V.A.; Deo, P.S. doi  openurl
  Title Mesoscopic superconducting disks: fluxoids in a box Type A1 Journal article
  Year 1999 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 47 Issue Pages 393-395  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000081403600093 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.806; 1999 IF: 0.815  
  Call Number UA @ lucian @ c:irua:27028 Serial 2002  
Permanent link to this record
 

 
Author De Schutter, B.; Devulder, W.; Schrauwen, A.; van Stiphout, K.; Perkisas, T.; Bals, S.; Vantomme, A.; Detavernier, C. pdf  doi
openurl 
  Title Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides Type A1 Journal article
  Year 2014 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 120 Issue Pages 168-173  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000336697300028 Publication Date 2013-09-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 9 Open Access Not_Open_Access  
  Notes FWO project Nr. G076112N Approved Most recent IF: 1.806; 2014 IF: 1.197  
  Call Number UA @ lucian @ c:irua:116958 Serial 2584  
Permanent link to this record
 

 
Author Peeters, F.M.; Reijniers, J.; Badalian, S.M.; Vasilopoulos, P. doi  openurl
  Title Snake orbits in hybrid semiconductor/ferromagnetic devices Type A1 Journal article
  Year 1999 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 47 Issue Pages 405-407  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000081403600096 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.806; 1999 IF: 0.815  
  Call Number UA @ lucian @ c:irua:27030 Serial 3046  
Permanent link to this record
 

 
Author Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. pdf  doi
openurl 
  Title HfOx as RRAM material : first principles insights on the working principles Type A1 Journal article
  Year 2014 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 120 Issue Pages 13-18  
  Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000336697300004 Publication Date 2013-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 22 Open Access  
  Notes Approved Most recent IF: 1.806; 2014 IF: 1.197  
  Call Number UA @ lucian @ c:irua:117767 Serial 3535  
Permanent link to this record
 

 
Author Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. doi  openurl
  Title Towards CMOS-compatible single-walled carbon nanotube resonators Type A1 Journal article
  Year 2013 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 107 Issue Pages 219-222  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract We report a totally CMOS-compatible fabrication technique to assemble horizontally suspended single-walled carbon nanotube (SWCNT) resonators. Individual SWCNTs are assembled in parallel at multiple sites by a technique called dielectrophoresis. The mechanical resonance frequencies of the suspended SWCNTs are in the range of 2035 MHz as determined from the piezoresistive response of the resonators during electrostatic actuation. The resistance of the suspended SWCNT either remains unchanged or increases or decreases significantly as a function of the actuation frequency. This can be explained by the effect the nanotube chirality has on the piezoresistive gauge factor.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000319855800040 Publication Date 2012-07-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 6 Open Access  
  Notes ; ; Approved Most recent IF: 1.806; 2013 IF: 1.338  
  Call Number UA @ lucian @ c:irua:109260 Serial 3685  
Permanent link to this record
 

 
Author Moors, K.; Sorée, B.; Magnus, W. doi  openurl
  Title Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering Type A1 Journal article
  Year 2017 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 167 Issue 167 Pages 37-41  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. (C) 2016 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000390746000008 Publication Date 2016-10-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 6 Open Access  
  Notes ; ; Approved Most recent IF: 1.806  
  Call Number UA @ lucian @ c:irua:140354 Serial 4460  
Permanent link to this record
 

 
Author Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. pdf  doi
openurl 
  Title Material relaxation in chalcogenide OTS SELECTOR materials Type A1 Journal article
  Year 2019 Publication (up) Microelectronic engineering Abbreviated Journal Microelectron Eng  
  Volume 215 Issue 215 Pages 110996  
  Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000480665600008 Publication Date 2019-05-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.806 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.806  
  Call Number UA @ admin @ c:irua:161905 Serial 6308  
Permanent link to this record
 

 
Author Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. pdf  doi
openurl 
  Title Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors Type A1 Journal article
  Year 2018 Publication (up) Microelectronic engineering Abbreviated Journal  
  Volume 200 Issue Pages 56-61  
  Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In the manufacturing of multi-Vt FinFET transistors, the gate material deposited in the nano-spaces left by the removed dummy gate must be etched back in mask-defined wafer areas. Etch conformality is a necessary condition for the control of under-etch at the boundary between areas defined by masking. We studied the feasibility of TiN etching by APM (ammonia peroxide mixture, also known as SC1) in nano-confined volumes representative of FinFET transistors of the 7 nm node and below, namely nanotrenches with 1-D confinement and nanoholes with 2-D confinement. TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film. Etching in closed nanoholes proved also to be conformal and faster than planar films, but with a delay to open the 1-D seam that seemed to depend strongly on small variations in the hole diameter. However, holes between the fins at the bottom of the removed dummy gate, are not circular and do present 2-D seams that should lend themselves for an easier start of conformal etching as compared to the circular nanoholes used in this study. Finally, to explain the higher etch rate observed in nano-confined features, concentrations of ions in nanoholes were calculated taking the overlap of electrostatic double layers (EDL) into account. With negatively charged TiN walls, as measured by streaming potential on planar films, ammonium was the dominant ion in nanoholes. As no chemical reaction proposed in the literature for TiN etching matched with this finding, we proposed that the formation of ammine complexes, dissolving the formed Ti oxide, was the rate-determining step.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000449134800010 Publication Date 2018-09-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:155414 Serial 8757  
Permanent link to this record
 

 
Author Leenaerts, O.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Adsorption of small molecules on graphene Type A1 Journal article
  Year 2009 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 40 Issue 4/5 Pages 860-862  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000265870200058 Publication Date 2008-12-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.163 Times cited 116 Open Access  
  Notes Approved Most recent IF: 1.163; 2009 IF: 0.778  
  Call Number UA @ lucian @ c:irua:77030 Serial 65  
Permanent link to this record
 

 
Author Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W. pdf  doi
openurl 
  Title Dielectric mismatch effect on coupled impurity states in a freestanding nanowire Type A1 Journal article
  Year 2009 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 40 Issue 3 Pages 446-448  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000264694700017 Publication Date 2008-07-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.163 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.163; 2009 IF: 0.778  
  Call Number UA @ lucian @ c:irua:76410 Serial 690  
Permanent link to this record
 

 
Author Slachmuylders, A.F.; Partoens, B.; Magnus, W.; Peeters, F.M. doi  openurl
  Title Neutral shallow donors near a metallic interface Type A1 Journal article
  Year 2009 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 40 Issue 4/5 Pages 753-755  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000265870200024 Publication Date 2009-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.163 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.163; 2009 IF: 0.778  
  Call Number UA @ lucian @ c:irua:77029 Serial 2296  
Permanent link to this record
 

 
Author Milton Pereira, J.; Vasilopoulos, P.; Peeters, F.M. doi  openurl
  Title Resonant tunneling in graphene microstructures Type A1 Journal article
  Year 2008 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 39 Issue 3-4 Pages 534-536  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000255600600055 Publication Date 2007-08-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.163 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.163; 2008 IF: 0.859  
  Call Number UA @ lucian @ c:irua:68850 Serial 2892  
Permanent link to this record
 

 
Author Mlinar, V.; Peeters, F.M. doi  openurl
  Title Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field Type A1 Journal article
  Year 2006 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 37 Issue 12 Pages 1427-1429  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000242907400002 Publication Date 2006-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.163 Times cited Open Access  
  Notes Approved Most recent IF: 1.163; 2006 IF: 0.651  
  Call Number UA @ lucian @ c:irua:62325 Serial 3612  
Permanent link to this record
 

 
Author Mlinar, V.; Peeters, F.M. doi  openurl
  Title Tuning of the optical properties of (11k) grown InAs quantum dots by the capping layer Type A1 Journal article
  Year 2008 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 39 Issue 3-4 Pages 359-361  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000255600600013 Publication Date 2007-09-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.163 Times cited Open Access  
  Notes Approved Most recent IF: 1.163; 2008 IF: 0.859  
  Call Number UA @ lucian @ c:irua:68849 Serial 3753  
Permanent link to this record
 

 
Author Janssens, K.L.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Type II quantum dots in magnetic fields: excitonic behaviour Type A1 Journal article
  Year 2003 Publication (up) Microelectronics journal Abbreviated Journal Microelectron J  
  Volume 34 Issue Pages 347-350  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Luton Editor  
  Language Wos 000183607400007 Publication Date 2003-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.163 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.163; 2003 IF: 0.565  
  Call Number UA @ lucian @ c:irua:62450 Serial 3790  
Permanent link to this record
 

 
Author Oleshko, V.P.; Gijbels, R.H.; Jacob, W.A. doi  openurl
  Title Analytical electron microscopy of silver halide photographic systems Type A1 Journal article
  Year 2000 Publication (up) Micron Abbreviated Journal Micron  
  Volume 31 Issue Pages 55-95  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000083352100007 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.98; 2000 IF: 1.324  
  Call Number UA @ lucian @ c:irua:34068 Serial 108  
Permanent link to this record
 

 
Author van Dyck, D.; Lobato, I.; Chen, F.-R.; Kisielowski, C. pdf  doi
openurl 
  Title Do you believe that atoms stay in place when you observe them in HREM? Type A1 Journal article
  Year 2015 Publication (up) Micron Abbreviated Journal Micron  
  Volume 68 Issue 68 Pages 158-163  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Recent advancements in aberration-corrected electron microscopy allow for an evaluation of unexpectedly large atom displacements beyond a resolution limit of similar to 0.5 angstrom, which are found to be dose-rate dependent in high resolution images. In this paper we outline a consistent description of the electron scattering process, which explains these unexpected phenomena. Our approach links thermal diffuse scattering to electron beam-induced object excitation and relaxation processes, which strongly contribute to the image formation process. The effect can provide an explanation for the well-known contrast mismatch (“Stobbs factor”) between image calculations and experiments. (C) 2014 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000348016500023 Publication Date 2014-09-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 11 Open Access  
  Notes Approved Most recent IF: 1.98; 2015 IF: 1.988  
  Call Number c:irua:123802 Serial 745  
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Author Martinez, G.T.; de Backer, A.; Rosenauer, A.; Verbeeck, J.; Van Aert, S. pdf  url
doi  openurl
  Title The effect of probe inaccuracies on the quantitative model-based analysis of high angle annular dark field scanning transmission electron microscopy images Type A1 Journal article
  Year 2014 Publication (up) Micron Abbreviated Journal Micron  
  Volume 63 Issue Pages 57-63  
  Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT)  
  Abstract Quantitative structural and chemical information can be obtained from high angle annular dark field scanning transmission electron microscopy (HAADF STEM) images when using statistical parameter estimation theory. In this approach, we assume an empirical parameterized imaging model for which the total scattered intensities of the atomic columns are estimated. These intensities can be related to the material structure or composition. Since the experimental probe profile is assumed to be known in the description of the imaging model, we will explore how the uncertainties in the probe profile affect the estimation of the total scattered intensities. Using multislice image simulations, we analyze this effect for Cs corrected and non-Cs corrected microscopes as a function of inaccuracies in cylindrically symmetric aberrations, such as defocus and spherical aberration of third and fifth order, and non-cylindrically symmetric aberrations, such as 2-fold and 3-fold astigmatism and coma.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000338402500011 Publication Date 2014-01-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 25 Open Access  
  Notes FWO (G.0393.11; G.0064.10; G.0374.13; G.0044.13); European Research Council under the 7th Framework Program (FP7); ERC GrantNo. 246791-COUNTATOMS and ERC Starting Grant No. 278510-VORTEX. A.R. thanks the DFG under contract number RO2057/8-1.The research leading to these results has received funding fromthe European Union 7th Framework Programme [FP7/2007-2013]under grant agreement no. 312483 (ESTEEM2).; esteem2ta ECASJO; Approved Most recent IF: 1.98; 2014 IF: 1.988  
  Call Number UA @ lucian @ c:irua:113857UA @ admin @ c:irua:113857 Serial 831  
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Author Felten, A.; Ghijsen, J.; Pireaux, J.-J.; Drube, W.; Johnson, R.L.; Liang, D.; Hecq, M.; Van Tendeloo, G.; Bittencourt, C. pdf  doi
openurl 
  Title Electronic structure of Pd nanoparticles on carbon nanotubes Type A1 Journal article
  Year 2009 Publication (up) Micron Abbreviated Journal Micron  
  Volume 40 Issue 1 Pages 74-79  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The effect of the oxygen plasma treatment on the electronic states of multi-wall carbon nanotubes (MWCNTs) is analyzed by X-ray photoemission measurements (XPS) and UPS, both using synchrotron radiation. It is found that the plasma treatment effectively grafts oxygen at the CNT-surface. Thereafter, the interaction between evaporated Pd and pristine or oxygen plasma-treated MWCNTs is investigated. Pd is found to nucleate at defective sites, whether initially present or introduced by oxygen plasma treatment. The plasma treatment induced a uniform dispersion of Pd clusters at the CNT-surface. The absence of additional features in the Pd 3d and C I s core levels spectra testifies that no Pd-C bond is formed. The shift of the Pd 3d core level towards high-binding energy for the smallest clusters is attributed to the Coulomb energy of the charged final state. (C) 2008 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000261420900015 Publication Date 2008-02-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 44 Open Access  
  Notes Pai 608 Approved Most recent IF: 1.98; 2009 IF: 1.626  
  Call Number UA @ lucian @ c:irua:94578 Serial 1015  
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Author Béché, A.; Winkler, R.; Plank, H.; Hofer, F.; Verbeeck, J. pdf  url
doi  openurl
  Title Focused electron beam induced deposition as a tool to create electron vortices Type A1 Journal article
  Year 2015 Publication (up) Micron Abbreviated Journal Micron  
  Volume 80 Issue 80 Pages 34-38  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Focused electron beam induced deposition (FEBID) is a microscopic technique that allows geometrically controlled material deposition with very high spatial resolution. This technique was used to create a spiral aperture capable of generating electron vortex beams in a transmission electron microscope (TEM). The vortex was then fully characterized using different TEM techniques, estimating the average orbital angular momentum to be approximately 0.8variant Planck's over 2pi per electron with almost 60% of the beam ending up in the l=1 state.  
  Address EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Wos 000366770100006 Publication Date 2015-09-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 21 Open Access  
  Notes A.B and J.V. acknowledge funding from the European Research Council under the 7th Framework Program (FP7), ERC Starting Grant No. 278510 VORTEX. J.V., R.W., H.P. and F.H. acknowledge financial support from the European Union under the 7th Framework Program (FP7) under a contract for an Integrated Infrastructure Initiative (Reference No. 312483 ESTEEM2). R.W and H.P also acknowledge financial support by the COST action CELINA (Nr. CM1301) and the EUROSTARS project TRIPLE-S (Nr. E!8213). The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government.; esteem2jra3 ECASJO; Approved Most recent IF: 1.98; 2015 IF: 1.988  
  Call Number c:irua:129203 c:irua:129203UA @ admin @ c:irua:129203 Serial 3946  
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Author Bertoni, G.; Calmels, L. pdf  doi
openurl 
  Title First-principles calculation of the electronic structure and energy loss near edge spectra of chiral carbon nanotubes Type A1 Journal article
  Year 2006 Publication (up) Micron Abbreviated Journal Micron  
  Volume 37 Issue 5 Pages 486-491  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000238806400018 Publication Date 2005-11-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 12 Open Access  
  Notes Fwo Approved Most recent IF: 1.98; 2006 IF: 1.200  
  Call Number UA @ lucian @ c:irua:59604 Serial 1200  
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Author Ruelle, B.; Felten, A.; Ghijsen, J.; Drube, W.; Johnson, R.L.; Liang, D.; Erni, R.; Van Tendeloo, G.; Sophie, P.; Dubois, P.; Godfroid, T.; Hecq, M.; Bittencourt, C.; pdf  doi
openurl 
  Title Functionalization of MWCNTs with atomic nitrogen Type A1 Journal article
  Year 2009 Publication (up) Micron Abbreviated Journal Micron  
  Volume 40 Issue 1 Pages 85-88  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this study of the changes induced by exposing MWCNTs to a nitrogen plasma, it was found by HRTEM that the atomic nitrogen exposure does not significantly etch the surface of the carbon nanotube (CNT). Nevertheless, the atomic nitrogen generated by a microwave plasma effectively grafts amine, nitrile, amide, and oxime groups onto the CNT surface, as observed by XPS, altering the density of valence electronic states, as seen in UPS. (C) 2008 Elsevier Ltd. All fights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000261420900017 Publication Date 2008-01-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 24 Open Access  
  Notes Pai 6/1; Pa 6/27 Approved Most recent IF: 1.98; 2009 IF: 1.626  
  Call Number UA @ lucian @ c:irua:103080 Serial 1305  
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Author Van Aert, S.; den Dekker, A.J.; van Dyck, D. pdf  doi
openurl 
  Title How to optimize the experimental design of quantitative atomic resolution TEM experiments? Type A1 Journal article
  Year 2004 Publication (up) Micron Abbreviated Journal Micron  
  Volume 35 Issue Pages 425-429  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000221721000005 Publication Date 2004-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 14 Open Access  
  Notes Approved Most recent IF: 1.98; 2004 IF: 1.464  
  Call Number UA @ lucian @ c:irua:47514 Serial 1495  
Permanent link to this record
 

 
Author Xu, Q.; Zandbergen, H.W.; van Dyck, D. pdf  doi
openurl 
  Title Imaging from atomic structure to electronic structure Type A1 Journal article
  Year 2012 Publication (up) Micron Abbreviated Journal Micron  
  Volume 43 Issue 4 Pages 524-531  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract This paper discusses the possibility of retrieving the electron distribution (with highlighted valence electron distribution information) of materials from recorded HREM images. This process can be achieved by solving two inverse problems: reconstruction of the exit wave and reconstruction of the electron distribution from exit waves. The first inverse problem can be solved using a focal series reconstruction method. We show that the second inverse problem can be solved by combining a series of exit waves recorded at different thickness conditions. This process is designed based on an improved understanding of the dynamical scattering process. It also explains the fundamental difficulty of obtaining the valence electron distribution information and the basis of our solution.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000301702400005 Publication Date 2011-11-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.98 Times cited Open Access  
  Notes Fwo Approved Most recent IF: 1.98; 2012 IF: 1.876  
  Call Number UA @ lucian @ c:irua:93634 Serial 1553  
Permanent link to this record
 

 
Author Van Aert, S.; van den Broek, W.; Goos, P.; van Dyck, D. pdf  doi
openurl 
  Title Model-based electron microscopy : from images toward precise numbers for unknown structure parameters Type A1 Journal article
  Year 2012 Publication (up) Micron Abbreviated Journal Micron  
  Volume 43 Issue 4 Pages 509-515  
  Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Statistical parameter estimation theory is proposed as a method to quantify electron microscopy images. It aims at obtaining precise and accurate values for the unknown structure parameters including, for example, atomic column positions and types. In this theory, observations are purely considered as data planes, from which structure parameters have to be determined using a parametric model describing the images. The method enables us to measure positions of atomic columns with a precision of the order of a few picometers even though the resolution of the electron microscope is one or two orders of magnitude larger. Moreover, small differences in averaged atomic number, which cannot be distinguished visually, can be quantified using high-angle annular dark field scanning transmission electron microscopy images. Finally, it is shown how to optimize the experimental design so as to attain the highest precision. As an example, the optimization of the probe size for nanoparticle radius measurements is considered. It is also shown how to quantitatively balance signal-to-noise ratio and resolution by adjusting the probe size.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000301702400003 Publication Date 2011-11-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0968-4328; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.98 Times cited 7 Open Access  
  Notes Fwo Approved Most recent IF: 1.98; 2012 IF: 1.876  
  Call Number UA @ lucian @ c:irua:94114 Serial 2099  
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