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Author Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L.
Title Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope Type A1 Journal article
Year 2016 Publication (down) Micron Abbreviated Journal Micron
Volume 80 Issue 80 Pages 145-165
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000366770100018 Publication Date 2015-09-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 50 Open Access
Notes Approved Most recent IF: 1.98
Call Number UA @ lucian @ c:irua:136446 Serial 4401
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Author Godet, M.; Vergès-Belmin, V.; Gauquelin, N.; Saheb, M.; Monnier, J.; Leroy, E.; Bourgon, J.; Verbeeck, J.; Andraud, C.
Title Nanoscale investigation by TEM and STEM-EELS of the laser induced yellowing Type A1 Journal article
Year 2018 Publication (down) Micron Abbreviated Journal Micron
Volume 115 Issue Pages 25-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nd-YAG QS laser cleaning of soiled stone at 1064 nm can sometimes result in a more yellow appearance compared to other cleaning techniques. Especially in France, this yellowing effect is still considered as a major aesthetic issue by the architects and conservators. One explanation states that the yellowing is linked to the formation of iron-rich nanophase(s) through the laser beam interaction with black crusts that would re-deposit on the cleaned substrate after irradiation. To characterize these nanophases, a model crust containing hematite was elaborated and laser irradiated using a Nd-YAG QS laser. The color of the sample shifted instantaneously from red to a bright yellow and numerous particles were ablated in a visible smoke. Transmission electron microscopy (TEM) was used to examine the morphology and the crystallinity of the neo-formed compounds, both on the surface of the samples and in the ablated materials. In addition, an investigation of the chemical and structural properties of the nanophases was conducted by X-ray dispersive energy (EDX) and electron energy loss (EELS) spectroscopies. It was found that both the surface of the sample and the ablated materials are covered by crystallized nano-spheres and nano-residues, all containing iron and oxygen, sometimes along with calcium and sulfur. In particular an interfacial area containing the four elements was evidenced between some nanostructures and the substrate. Magnetite Fe3O4 was also identified at the nanoscale. This study demonstrates that the laser yellowing of a model crust is linked to the presence of iron-rich nanophases including CaxFeySzOδ nanostructures and magnetite Fe3O4 at the surface after irradiation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000449125600004 Publication Date 2018-08-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.98 Times cited 9 Open Access Not_Open_Access: Available from 19.08.2020
Notes The authors wish to thank Valérie Lalanne for the sample preparation for TEM and Stijn Van den Broeck for the FIB cut elaboration. The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative–I3). Approved Most recent IF: 1.98
Call Number EMAT @ emat @c:irua:154356UA @ admin @ c:irua:154356 Serial 5056
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Author De Meyer, R.; Albrecht, W.; Bals, S.
Title Effectiveness of reducing the influence of CTAB at the surface of metal nanoparticles during in situ heating studies by TEM Type A1 Journal article
Year 2021 Publication (down) Micron Abbreviated Journal Micron
Volume 144 Issue Pages 103036
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ TEM is a valuable technique to offer novel insights in the behavior of nanomaterials under various conditions. However, interpretation of in situ experiments is not straightforward since the electron beam can impact the outcome of such measurements. For example, ligands surrounding metal nanoparticles transform into a protective carbon layer upon electron beam irradiation and may impact the apparent thermal stability during in situ heating experiments. In this work, we explore the effect of different treatments typically proposed to remove such ligands. We found that plasma treatment prior to heating experiments for Au nanorods and nanostars increased the apparent thermal stability of the nanoparticles, while an activated carbon treatment resulted in a decrease of the observed thermal stability. Treatment with HCl barely changed the experimental outcome. These results demonstrate the importance of carefully selecting pre-treatments procedures during in situ heating experiments.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000632282600002 Publication Date 2021-02-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.98 Times cited Open Access OpenAccess
Notes H2020; European Research Council; This work was supported by the European Union’s Horizon 2020 research and innovation program [grant agreement No 823717 (ESTEEM3) and No 815128 (REALNANO)]; We acknowledge Prof. Luis M. Liz-Marzán and co-workers of the Bionanoplasmonics Laboratory, CICbiomaGUNE, Spain for providing the Au nanoparticles.; sygma; esteem3jra; esteem3reported Approved Most recent IF: 1.98
Call Number EMAT @ emat @c:irua:175874 Serial 6677
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Author Jain, N.; Hao, Y.; Parekh, U.; Kaltenegger, M.; Pedrazo-Tardajos, A.; Lazzaroni, R.; Resel, R.; Geerts, Y.H.; Bals, S.; Van Aert, S.
Title Exploring the effects of graphene and temperature in reducing electron beam damage: A TEM and electron diffraction-based quantitative study on Lead Phthalocyanine (PbPc) crystals Type A1 Journal article
Year 2023 Publication (down) Micron Abbreviated Journal
Volume 169 Issue Pages 103444
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-resolution transmission electron microscopy (TEM) of organic crystals, such as Lead Phthalocyanine (PbPc), is very challenging since these materials are prone to electron beam damage leading to the breakdown of the crystal structure during investigation. Quantification of the damage is imperative to enable high-resolution imaging of PbPc crystals with minimum structural changes. In this work, we performed a detailed electron diffraction study to quantitatively measure degradation of PbPc crystals upon electron beam irradiation. Our study is based on the quantification of the fading intensity of the spots in the electron diffraction patterns. At various incident dose rates (e/Å2/s) and acceleration voltages, we experimentally extracted the decay rate (1/s), which directly correlates with the rate of beam damage. In this manner, a value for the critical dose (e/Å2) could be determined, which can be used as a measure to quantify beam damage. Using the same methodology, we explored the influence of cryogenic temperatures, graphene TEM substrates, and graphene encapsulation in prolonging the lifetime of the PbPc crystal structure during TEM investigation. The knowledge obtained by diffraction experiments is then translated to real space high-resolution TEM imaging of PbPc.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000965998800001 Publication Date 2023-03-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0968-4328 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.4 Times cited 1 Open Access OpenAccess
Notes This work is supported by FWO and FNRS within the 2Dto3D network of the EOS (Excellence of Science) program (grant number 30489208) and ERC-CoGREALNANO-815128 (to Prof. Dr. Sara Bals). N.J. would like to thank Dr. Kunal S. Mali and Dr. Da Wang for useful and interesting discussions on sample preparation procedures. Approved Most recent IF: 2.4; 2023 IF: 1.98
Call Number EMAT @ emat @c:irua:196069 Serial 7379
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Author Leenaerts, O.; Partoens, B.; Peeters, F.M.
Title Adsorption of small molecules on graphene Type A1 Journal article
Year 2009 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 40 Issue 4/5 Pages 860-862
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the adsorption process of small molecules on graphene through first-principles calculations and show the presence of two main charge transfer mechanisms. Which mechanism is the dominant one depends on the magnetic properties of the adsorbing molecules. We explain these mechanisms through the density of states of the system and the molecular orbitals of the adsorbates, and demonstrate the possible difficulties in calculating the charge transfer from first principles between a graphene sheet and a molecule. Our results are in good agreement with experiment.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000265870200058 Publication Date 2008-12-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 116 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:77030 Serial 65
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Author Li, B.; Partoens, B.; Peeters, F.M.; Magnus, W.
Title Dielectric mismatch effect on coupled impurity states in a freestanding nanowire Type A1 Journal article
Year 2009 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 40 Issue 3 Pages 446-448
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance di between the two impurities. The dependence of the binding energy on the wire radius R and the distance di between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000264694700017 Publication Date 2008-07-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 4 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:76410 Serial 690
Permanent link to this record
 
 
Author Slachmuylders, A.F.; Partoens, B.; Magnus, W.; Peeters, F.M.
Title Neutral shallow donors near a metallic interface Type A1 Journal article
Year 2009 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 40 Issue 4/5 Pages 753-755
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The effect of a metallic gate on the bound states of a shallow donor located near the gate is studied. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anti-crossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000265870200024 Publication Date 2009-02-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 1 Open Access
Notes Approved Most recent IF: 1.163; 2009 IF: 0.778
Call Number UA @ lucian @ c:irua:77029 Serial 2296
Permanent link to this record
 
 
Author Milton Pereira, J.; Vasilopoulos, P.; Peeters, F.M.
Title Resonant tunneling in graphene microstructures Type A1 Journal article
Year 2008 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 39 Issue 3-4 Pages 534-536
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000255600600055 Publication Date 2007-08-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 9 Open Access
Notes Approved Most recent IF: 1.163; 2008 IF: 0.859
Call Number UA @ lucian @ c:irua:68850 Serial 2892
Permanent link to this record
 
 
Author Mlinar, V.; Peeters, F.M.
Title Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field Type A1 Journal article
Year 2006 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 37 Issue 12 Pages 1427-1429
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000242907400002 Publication Date 2006-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.163 Times cited Open Access
Notes Approved Most recent IF: 1.163; 2006 IF: 0.651
Call Number UA @ lucian @ c:irua:62325 Serial 3612
Permanent link to this record
 
 
Author Mlinar, V.; Peeters, F.M.
Title Tuning of the optical properties of (11k) grown InAs quantum dots by the capping layer Type A1 Journal article
Year 2008 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 39 Issue 3-4 Pages 359-361
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000255600600013 Publication Date 2007-09-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.163 Times cited Open Access
Notes Approved Most recent IF: 1.163; 2008 IF: 0.859
Call Number UA @ lucian @ c:irua:68849 Serial 3753
Permanent link to this record
 
 
Author Janssens, K.L.; Partoens, B.; Peeters, F.M.
Title Type II quantum dots in magnetic fields: excitonic behaviour Type A1 Journal article
Year 2003 Publication (down) Microelectronics journal Abbreviated Journal Microelectron J
Volume 34 Issue Pages 347-350
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Luton Editor
Language Wos 000183607400007 Publication Date 2003-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-2692; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.163 Times cited 1 Open Access
Notes Approved Most recent IF: 1.163; 2003 IF: 0.565
Call Number UA @ lucian @ c:irua:62450 Serial 3790
Permanent link to this record
 
 
Author De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers Type A1 Journal article
Year 1999 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 45 Issue 2-3 Pages 277-282
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081748600023 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.806 Times cited Open Access
Notes Fwo-G.0051.97; Fwo-G.00117.86 Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:95791 Serial 47
Permanent link to this record
 
 
Author Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K.
Title Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Type A1 Journal article
Year 2005 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 80 Issue Pages 82-85
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000231517000021 Publication Date 2005-06-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806; 2005 IF: 1.347
Call Number UA @ lucian @ c:irua:102729 Serial 222
Permanent link to this record
 
 
Author Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K.
Title First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts Type A1 Journal article
Year 2005 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 80 Issue Pages 272-279
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The impact of interfacial chemistry occurring at dielectric/gate interface of P-MOS and N-MOS devices is reviewed through a quick literature survey. A specific emphasis is put on the way the bond polarization that occurs between a dielectric and a metal substrate impacts on the gate work function. First-principle simulations are then used to study the work function changes induced by dopant aggregation in nickel monosilicide metal gates. It is shown that the changes are a natural consequence of the variation of the interface polarization.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000231517000062 Publication Date 2005-06-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 31 Open Access
Notes Approved Most recent IF: 1.806; 2005 IF: 1.347
Call Number UA @ lucian @ c:irua:95095 Serial 1199
Permanent link to this record
 
 
Author Peeters, F.M.; Schweigert, V.A.; Deo, P.S.
Title Mesoscopic superconducting disks: fluxoids in a box Type A1 Journal article
Year 1999 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 47 Issue Pages 393-395
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081403600093 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:27028 Serial 2002
Permanent link to this record
 
 
Author De Schutter, B.; Devulder, W.; Schrauwen, A.; van Stiphout, K.; Perkisas, T.; Bals, S.; Vantomme, A.; Detavernier, C.
Title Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides Type A1 Journal article
Year 2014 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 120 Issue Pages 168-173
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000336697300028 Publication Date 2013-09-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 9 Open Access Not_Open_Access
Notes FWO project Nr. G076112N Approved Most recent IF: 1.806; 2014 IF: 1.197
Call Number UA @ lucian @ c:irua:116958 Serial 2584
Permanent link to this record
 
 
Author Peeters, F.M.; Reijniers, J.; Badalian, S.M.; Vasilopoulos, P.
Title Snake orbits in hybrid semiconductor/ferromagnetic devices Type A1 Journal article
Year 1999 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 47 Issue Pages 405-407
Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000081403600096 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes Approved Most recent IF: 1.806; 1999 IF: 0.815
Call Number UA @ lucian @ c:irua:27030 Serial 3046
Permanent link to this record
 
 
Author Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G.
Title HfOx as RRAM material : first principles insights on the working principles Type A1 Journal article
Year 2014 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 120 Issue Pages 13-18
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed – the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000336697300004 Publication Date 2013-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 22 Open Access
Notes Approved Most recent IF: 1.806; 2014 IF: 1.197
Call Number UA @ lucian @ c:irua:117767 Serial 3535
Permanent link to this record
 
 
Author Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A.
Title Towards CMOS-compatible single-walled carbon nanotube resonators Type A1 Journal article
Year 2013 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 107 Issue Pages 219-222
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We report a totally CMOS-compatible fabrication technique to assemble horizontally suspended single-walled carbon nanotube (SWCNT) resonators. Individual SWCNTs are assembled in parallel at multiple sites by a technique called dielectrophoresis. The mechanical resonance frequencies of the suspended SWCNTs are in the range of 2035 MHz as determined from the piezoresistive response of the resonators during electrostatic actuation. The resistance of the suspended SWCNT either remains unchanged or increases or decreases significantly as a function of the actuation frequency. This can be explained by the effect the nanotube chirality has on the piezoresistive gauge factor.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000319855800040 Publication Date 2012-07-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes ; ; Approved Most recent IF: 1.806; 2013 IF: 1.338
Call Number UA @ lucian @ c:irua:109260 Serial 3685
Permanent link to this record
 
 
Author Moors, K.; Sorée, B.; Magnus, W.
Title Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering Type A1 Journal article
Year 2017 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 167 Issue 167 Pages 37-41
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters. (C) 2016 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000390746000008 Publication Date 2016-10-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 6 Open Access
Notes ; ; Approved Most recent IF: 1.806
Call Number UA @ lucian @ c:irua:140354 Serial 4460
Permanent link to this record
 
 
Author Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G.
Title Material relaxation in chalcogenide OTS SELECTOR materials Type A1 Journal article
Year 2019 Publication (down) Microelectronic engineering Abbreviated Journal Microelectron Eng
Volume 215 Issue 215 Pages 110996
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000480665600008 Publication Date 2019-05-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.806 Times cited 1 Open Access
Notes Approved Most recent IF: 1.806
Call Number UA @ admin @ c:irua:161905 Serial 6308
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Author Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F.
Title Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors Type A1 Journal article
Year 2018 Publication (down) Microelectronic engineering Abbreviated Journal
Volume 200 Issue Pages 56-61
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In the manufacturing of multi-Vt FinFET transistors, the gate material deposited in the nano-spaces left by the removed dummy gate must be etched back in mask-defined wafer areas. Etch conformality is a necessary condition for the control of under-etch at the boundary between areas defined by masking. We studied the feasibility of TiN etching by APM (ammonia peroxide mixture, also known as SC1) in nano-confined volumes representative of FinFET transistors of the 7 nm node and below, namely nanotrenches with 1-D confinement and nanoholes with 2-D confinement. TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film. Etching in closed nanoholes proved also to be conformal and faster than planar films, but with a delay to open the 1-D seam that seemed to depend strongly on small variations in the hole diameter. However, holes between the fins at the bottom of the removed dummy gate, are not circular and do present 2-D seams that should lend themselves for an easier start of conformal etching as compared to the circular nanoholes used in this study. Finally, to explain the higher etch rate observed in nano-confined features, concentrations of ions in nanoholes were calculated taking the overlap of electrostatic double layers (EDL) into account. With negatively charged TiN walls, as measured by streaming potential on planar films, ammonium was the dominant ion in nanoholes. As no chemical reaction proposed in the literature for TiN etching matched with this finding, we proposed that the formation of ammine complexes, dissolving the formed Ti oxide, was the rate-determining step.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000449134800010 Publication Date 2018-09-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:155414 Serial 8757
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Author Adriaens, A.; Van 't dack, L.; Adams, F.; Gijbels, R.
Title A mass spectrometric study of the dissolution behavior of sanidine Type A1 Journal article
Year 1995 Publication (down) Microchimica acta Abbreviated Journal Microchim Acta
Volume 120 Issue Pages 139-147
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Wien Editor
Language Wos A1995TH37000013 Publication Date 2005-02-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.741 Times cited 1 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10904 Serial 1953
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Author Verbeeck, J.; Bertoni, G.
Title Model-based quantification of EELS: is standardless quantification possible? Type A1 Journal article
Year 2008 Publication (down) Microchimica acta Abbreviated Journal Microchim Acta
Volume 161 Issue 3/4 Pages 439-443
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Electron energy loss spectroscopy (EELS) is an ideal tool to obtain chemical information from nanoscale volumes. Quantification of the experimental spectra however has prevented for a long time access to the available information in a reliable and reproducible way. We present recent advances in model-based quantification of EELS spectra and show that we obtain the best possible precision for a given dataset, as well as remarkably good accuracies when applied to three different materials. The results are shown to be far superior over conventional quantification techniques and could hold a promise for standardless quantification of EELS spectra.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000256175600024 Publication Date 2008-02-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited 5 Open Access
Notes Esteem 026019; Fwo; G.0425.05; Iap V; Goa 2005 Approved Most recent IF: 4.58; 2008 IF: 1.910
Call Number UA @ lucian @ c:irua:69292UA @ admin @ c:irua:69292 Serial 2100
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Author Van 't dack, L.; Gijbels, R.; Walker, C.T.
Title Modern developments and applications in microbeam analysis: proceedings of the 10th Workshop of the European Microbeam Analysis Society (EMAS), Antwerp, Belgium, May 6-10, 2007 Type Editorial
Year 2008 Publication (down) Microchimica acta Abbreviated Journal Microchim Acta
Volume 161 Issue 3/4 Pages 285-286
Keywords Editorial; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000256175600001 Publication Date 2008-05-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited 1 Open Access
Notes Approved Most recent IF: 4.58; 2008 IF: 1.910
Call Number UA @ lucian @ c:irua:69291 Serial 2157
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Author Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F.
Title Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation Type A1 Journal article
Year 2002 Publication (down) Microchimica acta Abbreviated Journal Microchim Acta
Volume 139 Issue Pages 77-81
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Wien Editor
Language Wos 000175560300012 Publication Date 2003-03-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited 3 Open Access
Notes Approved Most recent IF: 4.58; 2002 IF: NA
Call Number UA @ lucian @ c:irua:38378 Serial 2420
Permanent link to this record
 
 
Author Wagner, B.; Nowak, A.; Bulska, E.; Kunicki-Goldfinger, J.; Schalm, O.; Janssens, K.; schalm
Title Complementary analysis of historical glass by scanning electron microscopy with energy dispersive X-ray spectroscopy and laser ablation inductiveley coupled plasma mass spectrometry Type A1 Journal article
Year 2008 Publication (down) Microchimica acta Abbreviated Journal
Volume 162 Issue 3-4 Pages 415-424
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000258194900014 Publication Date 2007-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 28 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:70565 Serial 5533
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Author Wadsak, M.; Constantinides, I.; Vittiglio, G.; Adriaens, A.; Janssens, K.; Schreiner, M.; Adams, F.C.; Brunella, P.; Wuttmann, M.
Title Multianalytical study of patina formed on archaeological metal objects from Bliesbruck-Reinheim Type A1 Journal article
Year 2000 Publication (down) Microchimica acta Abbreviated Journal Microchim Acta
Volume 133 Issue Pages 159-164
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000087797400024 Publication Date 2003-02-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672; 1436-5073 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.58 Times cited Open Access
Notes Approved Most recent IF: 4.58; 2000 IF: 1.303
Call Number UA @ admin @ c:irua:28228 Serial 5740
Permanent link to this record
 
 
Author Spolnik, Z.; Bencs, L.; Worobiec, A.; Kontozova, V.; Van Grieken, R.
Title Application of EDXRF and thin window EPMA for the investigation of the influence of hot air heating on the generation and deposition of particulate matter Type A1 Journal article
Year 2005 Publication (down) Microchimica acta Abbreviated Journal
Volume 149 Issue Pages 79-85
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Laboratory Experimental Medicine and Pediatrics (LEMP)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000226408200010 Publication Date 2005-01-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:51258 Serial 7471
Permanent link to this record
 
 
Author Kontozova-Deutsch, V.; Deutsch, F.; Godoi, R.H.M.; Spolnik, Z.; Wei, W.; Van Grieken, R.
Title Application of EPMA and XRF for the investigation of particulate pollutants in the field of cultural heritage Type A1 Journal article
Year 2008 Publication (down) Microchimica acta Abbreviated Journal
Volume 161 Issue 3/4 Pages 465-469
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000256175600029 Publication Date 2008-01-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0026-3672; 1436-5073 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:68798 Serial 7474
Permanent link to this record