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Author |
Title |
Year |
Publication  |
Volume |
Times cited |
Additional Links |
Links |
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de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
2001 |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
308 |
3 |
UA library record; WoS full record; WoS citing articles |
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|
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Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
273-4 |
5 |
UA library record; WoS full record; WoS citing articles |
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van der Burgt, M.; Thoen, P.; Herlach, F.; Peeters, F.M.; Harris, J.J.; Foxon, C.T. |
The quantized Hall effect in pulsed magnetic fields |
1992 |
Physica: B |
177 |
14 |
UA library record; WoS full record; WoS citing articles |
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