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Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
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Year |
2001 |
Publication ![sorted by Publication field, descending order (down)](img/sort_desc.gif) |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
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Volume |
308 |
Issue |
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Pages |
294-297 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
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Wos |
000173660100073 |
Publication Date |
2002-10-15 |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
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Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
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Permanent link to this record |
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Author |
Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
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Title |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
Type |
A1 Journal article |
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Year |
1999 |
Publication ![sorted by Publication field, descending order (down)](img/sort_desc.gif) |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
Abbreviated Journal |
Physica B |
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Volume |
273-4 |
Issue |
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Pages |
140-143 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved. |
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Place of Publication |
Amsterdam |
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Wos |
000084452200031 |
Publication Date |
2002-07-26 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.386 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.386; 1999 IF: 0.725 |
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Call Number |
UA @ lucian @ c:irua:102892 |
Serial |
2925 |
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Permanent link to this record |
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Author |
van der Burgt, M.; Thoen, P.; Herlach, F.; Peeters, F.M.; Harris, J.J.; Foxon, C.T. |
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Title |
The quantized Hall effect in pulsed magnetic fields |
Type |
A1 Journal article |
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Year |
1992 |
Publication ![sorted by Publication field, descending order (down)](img/sort_desc.gif) |
Physica: B |
Abbreviated Journal |
Physica B |
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Volume |
177 |
Issue |
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Pages |
409-413 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Wos |
A1992HP25000086 |
Publication Date |
2002-10-17 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.319 |
Times cited |
14 |
Open Access |
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Notes |
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Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
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Call Number |
UA @ lucian @ c:irua:3026 |
Serial |
2770 |
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Permanent link to this record |