Records |
Author |
Koster, G.; Verbist, K.; Rijnders, G.; Rogalla, H.; Van Tendeloo, G.; Blank, D.H.A. |
Title |
Structure and properties of (Sr,Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition |
Type |
A1 Journal article |
Year |
2001 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
Volume |
353 |
Issue |
3-4 |
Pages |
167-183 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report on the preparation of CuBa(2)(Sr(x)Ca(1-x))(n)Cu(n-1)O(y) compounds by fabrication of (Ba,Sr,Ca)CuO(2) superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the applicability of PLD to atomic engineering as well as the fabrication of artificial superconductors is demonstrated. The (Sr,Ca)CuO(2)-BaCuO(2) superlattices are characterized by X-ray diffraction, high-resolution electron microscopy (HREM) and selected area electron diffraction. The superlattice period has been deduced from electron diffraction patterns and XRD measurements. For Sr containing films, the best growth behavior is observed and films with the highest degree of crystallinity are obtained, whereas superconductivity is only found in less crystalline, Ca containing films. Under some deposition conditions and depending on the amount of Ba containing layers in the superlattice, it was observed that the BaCuO(2) material is converted to Ba(2)CuO(4-delta). Image simulations to interpret the HREM contrast are performed. (C) 2001 Elsevier Science B.V. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000168861100003 |
Publication Date |
2002-07-25 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0921-4534; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.404 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.404; 2001 IF: 0.806 |
Call Number |
UA @ lucian @ c:irua:103417 |
Serial |
3293 |
Permanent link to this record |
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Author |
Bals, S.; Rijnders, G.; Blank, D.H.A.; Van Tendeloo, G. |
Title |
TEM of ultra-thin DyBa2Cu3O7-x films deposited on TiO2 terminated SrTiO3 |
Type |
A1 Journal article |
Year |
2001 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
Volume |
355 |
Issue |
3/4 |
Pages |
225-230 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Using pulsed laser deposition ultra-thin DyBa2Cu3O7-x films were deposited on a single terminated (0 0 1) SrTiOr(3) substrate. The initial growth was studied by high-resolution electron microscopy. Two different types of interface arrangements occur and were determined as: bulk-SrO-TiO2-BaO-CuO-BaO-CuO2-Dy-CuO2-BaO bulk and bulk-SrO-TiO2-BaO-CuO2-Dy-CuO2-BaO-CuO-BaO-bulk This variable growth sequence causes structural shifts, resulting in antiphase boundaries with displacement vector R = [0 0 1/3]. as well as local chemical variations. (C) 2001 Elsevier Science B.V. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000169479500006 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0921-4534; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.404 |
Times cited |
26 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.404; 2001 IF: 0.806 |
Call Number |
UA @ lucian @ c:irua:54793 |
Serial |
3484 |
Permanent link to this record |
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Author |
Verbeeck, J.; Bals, S.; Lamoen, D.; Luysberg, M.; Huijben, M.; Rijnders, G.; Brinkman, A.; Hilgenkamp, H.; Blank, D.H.A.; Van Tendeloo, G. |
Title |
Electronic reconstruction at n-type SrTiO3/LaAlO3 interfaces |
Type |
A1 Journal article |
Year |
2010 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
Volume |
81 |
Issue |
8 |
Pages |
085113,1-085113,6 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000275053300040 |
Publication Date |
2010-02-18 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.836 |
Times cited |
25 |
Open Access |
|
Notes |
Esteem 026019; Fwo |
Approved |
Most recent IF: 3.836; 2010 IF: 3.774 |
Call Number |
UA @ lucian @ c:irua:81768UA @ admin @ c:irua:81768 |
Serial |
1005 |
Permanent link to this record |
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Author |
Samal, D.; Tan, H.; Molegraaf, H.; Kuiper, B.; Siemons, W.; Bals, S.; Verbeeck, J.; Van Tendeloo, G.; Takamura, Y.; Arenholz, E.; Jenkins, C.A.; Rijnders, G.; Koster, G. |
Title |
Experimental evidence for oxygen sublattice control in polar infinite layer SrCuO2 |
Type |
A1 Journal article |
Year |
2013 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
Volume |
111 |
Issue |
9 |
Pages |
096102-96105 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A recent theoretical study [ Phys. Rev. B 85 121411(R) (2012)] predicted a thickness limit below which ideal polar cuprates turn nonpolar driven by the associated electrostatic instability. Here we demonstrate this possibility by inducing a structural transformation from the bulk planar to chainlike structure upon reducing the SrCuO2 repeat thickness in SrCuO2/SrTiO3 superlattices with unit-cell precision. Our results, based on structural investigation by x-ray diffraction and high resolution scanning transmission electron microscopy, demonstrate that the oxygen sublattice can essentially be built by design. In addition, the electronic structure of the chainlike structure, as studied by x-ray absorption spectroscopy, shows the signature for preferential hole occupation in the Cu 3d3z2-r2 orbital, which is different from the planar case. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000323610800023 |
Publication Date |
2013-08-27 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-9007;1079-7114; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
8.462 |
Times cited |
29 |
Open Access |
|
Notes |
This work was carried out with financial support from AFOSR and EOARD project (Project No. FA8655-10-1-3077) and also supported by funding from the European Research Council under the 7th Framework Program (FP7), ERC Grant No. 246791-COUNTATOMS and ERC Starting Grant No. 278510 VORTEX. The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. This work was partially funded by the European Union Council under the 7th Framework Program (FP7) Grant No. NMP3-LA-2010-246102 IFOX. The authors acknowledge financial support from the European Union under the Seventh Framework Program under a contract for an Integrated Infrastructure No. 312483-ESTEEM2. Advanced Light Source is supported by the Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy (DOE) under Contract No. DE-AC02-05CH11231. Y. T. acknowledges support from the National Science Foundation (DMR-0747896). W. S. was supported by the US DOE, Basic Energy Sciences, Materials Sciences and Engineering Division. D. S. thanks Z. Zhong from Vienna University of Technology, Austria for scientific discussion. ECASJO_; |
Approved |
Most recent IF: 8.462; 2013 IF: 7.728 |
Call Number |
UA @ lucian @ c:irua:109452UA @ admin @ c:irua:109452 |
Serial |
1140 |
Permanent link to this record |
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Author |
Chen, B.; Gauquelin, N.; Reith, P.; Halisdemir, U.; Jannis, D.; Spreitzer, M.; Huijben, M.; Abel, S.; Fompeyrine, J.; Verbeeck, J.; Hilgenkamp, H.; Rijnders, G.; Koster, G. |
Title |
Thermal-strain-engineered ferromagnetism of LaMnO3/SrTiO3 heterostructures grown on silicon |
Type |
A1 Journal article |
Year |
2020 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physical review materials |
Abbreviated Journal |
Phys. Rev. Materials |
Volume |
4 |
Issue |
2 |
Pages |
024406 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The integration of oxides on Si remains challenging, which largely hampers the practical applications of oxide-based electronic devices with superior performance. Recently, LaMnO3/SrTiO3 (LMO/STO) heterostructures have gained renewed interest for the debating origin of the ferromagnetic-insulating ground state as well as for their spin-filter applications. Here we report on the structural and magnetic properties of high-quality LMO/STO heterostructures grown on silicon. The chemical abruptness across the interface was investigated by atomic-resolution scanning transmission electron microscopy. The difference in the thermal expansion coefficients between LMO and Si imposed a large biaxial tensile strain to the LMO film, resulting in a tetragonal structure with c/a∼ 0.983. Consequently, we observed a significantly suppressed ferromagnetism along with an enhanced coercive field, as compared to the less distorted LMO film (c/a∼1.004) grown on STO single crystal. The results are discussed in terms of tensile-strain enhanced antiferromagnetic instabilities. Moreover, the ferromagnetism of LMO on Si sharply disappeared below a thickness of 5 unit cells, in agreement with the LMO/STO case, pointing to a robust critical behavior irrespective of the strain state. Our results demonstrate that the growth of oxide films on Si can be a promising way to study the tensile-strain effects in correlated oxides, and also pave the way towards the integration of multifunctional oxides on Si with atomic-layer control. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000513552900003 |
Publication Date |
2020-02-12 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
2475-9953 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.4 |
Times cited |
6 |
Open Access |
Not_Open_Access |
Notes |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek; Universiteit Antwerpen; Vlaamse regering; Fonds Wetenschappelijk Onderzoek, G093417N ; Javna Agencija za Raziskovalno Dejavnost RS, J2-9237 P2-0091 ; European Commission, H2020-ICT-2016-1-732642 ; |
Approved |
Most recent IF: 3.4; 2020 IF: NA |
Call Number |
EMAT @ emat @c:irua:167782 |
Serial |
6375 |
Permanent link to this record |
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Author |
Araizi-Kanoutas, G.; Geessinck, J.; Gauquelin, N.; Smit, S.; Verbeek, X.H.; Mishra, S.K.; Bencok, P.; Schlueter, C.; Lee, T.-L.; Krishnan, D.; Fatermans, J.; Verbeeck, J.; Rijnders, G.; Koster, G.; Golden, M.S. |
Title |
Co valence transformation in isopolar LaCoO3/LaTiO3 perovskite heterostructures via interfacial engineering |
Type |
A1 Journal article |
Year |
2020 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Physical review materials |
Abbreviated Journal |
Phys. Rev. Materials |
Volume |
4 |
Issue |
2 |
Pages |
026001 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
We report charge transfer up to a single electron per interfacial unit cell across nonpolar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and trilayer systems grown using pulsed laser deposition, soft x-ray absorption, dichroism, and scanning transmission electron microscopy-electron energy loss spectroscopy are used to probe the cobalt-3d electron count and provide an element-specific investigation of the magnetic properties. The experiments show the cobalt valence conversion is active within 3 unit cells of the heterointerface, and able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3/LaCoO3 interfaces, the thickness of an additional, electronically insulating “break” layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in trilayers provide a trio of control knobs for average charge of the cobalt ions in LaCoO3, illustrating the efficacy of O−2p band alignment as a guiding principle for property design in complex oxide heterointerfaces. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000513551200007 |
Publication Date |
2020-02-10 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.4 |
Times cited |
13 |
Open Access |
OpenAccess |
Notes |
Nederlandse Organisatie voor Wetenschappelijk Onderzoek; Universiteit Antwerpen; Horizon 2020, 730872 ; Department of Science and Technology, Ministry of Science and Technology, SR/NM/Z-07/2015 ; Jawaharlal Nehru Centre for Advanced Scientific Research; |
Approved |
Most recent IF: 3.4; 2020 IF: NA |
Call Number |
EMAT @ emat @c:irua:167787 |
Serial |
6376 |
Permanent link to this record |
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Author |
Do, M.T.; Gauquelin, N.; Nguyen, M.D.; Wang, J.; Verbeeck, J.; Blom, F.; Koster, G.; Houwman, E.P.; Rijnders, G. |
Title |
Interfacial dielectric layer as an origin of polarization fatigue in ferroelectric capacitors |
Type |
A1 Journal article |
Year |
2020 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Scientific Reports |
Abbreviated Journal |
Sci Rep-Uk |
Volume |
10 |
Issue |
1 |
Pages |
7310 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
Origins of polarization fatigue in ferroelectric capacitors under electric field cycling still remain unclear. Here, we experimentally identify origins of polarization fatigue in ferroelectric PbZr0.52Ti0.48O3 (PZT) thin-film capacitors by investigating their fatigue behaviours and interface structures. The PZT layers are epitaxially grown on SrRuO3-buffered SrTiO3 substrates by a pulsed laser deposition (PLD), and the capacitor top-electrodes are various, including SrRuO3 (SRO) made by in-situ PLD, Pt by in-situ PLD (Pt-inPLD) and ex-situ sputtering (Pt-sputtered). We found that fatigue behaviour of the capacitor is directly related to the top-electrode/PZT interface structure. The Pt-sputtered/PZT/SRO capacitor has a thin defective layer at the top interface and shows early fatigue while the Pt-inPLD/PZT/SRO and SRO/PZT/SRO capacitor have clean top-interfaces and show much more fatigue resistance. The defective dielectric layer at the Pt-sputtered/PZT interface mainly contains carbon contaminants, which form during the capacitor ex-situ fabrication. Removal of this dielectric layer significantly delays the fatigue onset. Our results clearly indicate that dielectric layer at ferroelectric capacitor interfaces is the main origin of polarization fatigue, as previously proposed in the charge injection model. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000559953800003 |
Publication Date |
2020-04-30 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2045-2322 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
4.6 |
Times cited |
18 |
Open Access |
OpenAccess |
Notes |
; The authors acknowledge the financial support of the Nederlandse Organisatie voor Wetenschappelijk Onderzoek through Grant No. F62.3.15559. ; |
Approved |
Most recent IF: 4.6; 2020 IF: 4.259 |
Call Number |
EMAT @ emat @c:irua:169865 |
Serial |
6374 |
Permanent link to this record |