Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
Simon, P.; Bogaerts, A. |
Vibrational level population of nitrogen impurities in low-pressure argon glow discharges |
2011 |
Journal of analytical atomic spectrometry |
26 |
6 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A. |
Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition |
2011 |
Plasma sources science and technology |
20 |
11 |
UA library record; WoS full record; WoS citing articles |
Lindner, H.; Loper, K.H.; Hahn, D.W.; Niemax, K. |
The influence of laser-particle interaction in laser induced breakdown spectroscopy and laser ablation inductively coupled plasma spectrometry |
2011 |
Spectrochimica acta: part B : atomic spectroscopy |
66 |
12 |
UA library record; WoS full record; WoS citing articles |
Mao, M.; Bogaerts, A. |
Plasma chemistry modeling for an inductively coupled plasma used for the growth of carbon nanotubes |
2011 |
Journal of physics : conference series |
275 |
|
UA library record |
Eckert, M.; Mortet, V.; Zhang, L.; Neyts, E.; Verbeeck, J.; Haenen, ken; Bogaerts, A. |
Theoretical investigation of grain size tuning during prolonged bias-enhanced nucleation |
2011 |
Chemistry of materials |
23 |
9 |
UA library record; WoS full record; WoS citing articles |
Jehanathan, N.; Georgieva, V.; Saraiva, M.; Depla, D.; Bogaerts, A.; Van Tendeloo, G. |
The influence of Cr and Y on the micro structural evolution of Mg―Cr―O and Mg―Y―O thin films |
2011 |
Thin solid films : an international journal on the science and technology of thin and thick films |
519 |
4 |
UA library record; WoS full record; WoS citing articles |
Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. |
Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
28 |
UA library record; WoS full record; WoS citing articles |
Yusupov, M.; Bultinck, E.; Depla, D.; Bogaerts, A. |
Behavior of electrons in a dual-magnetron sputter deposition system : a Monte Carlo model |
2011 |
New journal of physics |
13 |
12 |
UA library record; WoS full record; WoS citing articles |
Si, X.-J.; Zhao, S.-X.; Xu, X.; Bogaerts, A.; Wang, Y.-N. |
Fluid simulations of frequency effects on nonlinear harmonics in inductively coupled plasma |
2011 |
Physics of plasmas |
18 |
7 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Bogaerts, A.; Shamiryan, D. |
Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma |
2011 |
Plasma processes and polymers |
8 |
5 |
UA library record; WoS full record; WoS citing articles |
Yusupov, M.; Bultinck, E.; Depla, D.; Bogaerts, A. |
Elucidating the asymmetric behavior of the discharge in a dual magnetron sputter deposition system |
2011 |
Applied physics letters |
98 |
4 |
UA library record; WoS full record; WoS citing articles |
De Bie, C.; Martens, T.; van Dijk, J.; Paulussen, S.; Verheyde, B.; Corthals, S.; Bogaerts, A. |
Dielectric barrier discharges used for the conversion of greenhouse gases: modeling the plasma chemistry by fluid simulations |
2011 |
Plasma sources science and technology |
20 |
38 |
UA library record; WoS full record; WoS citing articles |
Georgieva, V.; Voter, A.F.; Bogaerts, A. |
Understanding the surface diffusion processes during magnetron sputter-deposition of complex oxide Mg-Al-O thin films |
2011 |
Crystal growth & design |
11 |
14 |
UA library record; WoS full record; WoS citing articles |
Bogaerts, A.; Eckert, M.; Mao, M.; Neyts, E. |
Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials |
2011 |
Journal of physics: D: applied physics |
44 |
25 |
UA library record; WoS full record; WoS citing articles |
Bogaerts, A.; Aghaei, M.; Autrique, D.; Lindner, H.; Chen, Z.; Wendelen, W. |
Computer simulations of laser ablation, plume expansion and plasma formation |
2011 |
|
|
8 |
UA library record; WoS full record; WoS citing articles |
Lindner, H.; Bogaerts, A. |
Multi-element model for the simulation of inductively coupled plasmas : effects of helium addition to the central gas stream |
2011 |
Spectrochimica acta: part B : atomic spectroscopy |
66 |
28 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Structural and vibrational properties of amorphous GeO2 from first-principles |
2011 |
Applied physics letters |
98 |
226 |
UA library record; WoS full record; WoS citing articles |
Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of hydrogenated silicene and germanene |
2011 |
Applied physics letters |
98 |
63 |
UA library record; WoS full record; WoS citing articles |
Bultinck, E.; Bogaerts, A. |
Characterization of an Ar/O2 magnetron plasma by a multi-species Monte Carlo model |
2011 |
Plasma sources science and technology |
20 |
7 |
UA library record; WoS full record; WoS citing articles |
Tinck, S.; Boullart, W.; Bogaerts, A. |
Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating |
2011 |
Plasma sources science and technology |
20 |
22 |
UA library record; WoS full record; WoS citing articles |
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. |
Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
46 |
UA library record; WoS full record; WoS citing articles |
Wang, Y.; Yu, M.Y.; Chen, Z.Y. |
Coherent relativistic wake wave of a charged object moving steadily in a plasma |
2011 |
Physica scripta |
84 |
5 |
UA library record; WoS full record; WoS citing articles |
De Bie, C.; Verheyde, B.; Martens, T.; van Dijk, J.; Paulussen, S.; Bogaerts, A. |
Fluid modeling of the conversion of methane into higher hydrocarbons in an atmospheric pressure dielectric barrier discharge |
2011 |
Plasma processes and polymers |
8 |
70 |
UA library record; WoS full record; WoS citing articles |
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
Lindner, H.; Murtazin, A.; Groh, S.; Niemax, K.; Bogaerts, A. |
Simulation and experimental studies on plasma temperature, flow velocity, and injector diameter effects for an inductively coupled plasma |
2011 |
Analytical chemistry |
83 |
34 |
UA library record; WoS full record; WoS citing articles |
Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
Neyts, E.C.; van Duin, A.C.T.; Bogaerts, A. |
Changing chirality during single-walled carbon nanotube growth : a reactive molecular dynamics/Monte Carlo study |
2011 |
Journal of the American Chemical Society |
133 |
116 |
UA library record; WoS full record; WoS citing articles |
Mao, M.; Wang, Y.N.; Bogaerts, A. |
Numerical study of the plasma chemistry in inductively coupled SF6 and SF6/AR plasmas used for deep silicon etching applications |
2011 |
Journal of physics: D: applied physics |
44 |
20 |
UA library record; WoS full record; WoS citing articles |