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Author Seo, J.W.; Schryvers, D.
Title TEM investigation of the microstructure and defects of CuZr martensite: 2: planar defects Type A1 Journal article
Year 1998 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 46 Issue Pages 1177-1183
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000072289100010 Publication Date (up) 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.301 Times cited 21 Open Access
Notes Approved Most recent IF: 5.301; 1998 IF: 1.834
Call Number UA @ lucian @ c:irua:48361 Serial 3480
Permanent link to this record
 
 
Author Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.
Title The study of carbon nanotubules produced by catalytic method Type A1 Journal article
Year 1994 Publication Chemical physics letters Abbreviated Journal Chem Phys Lett
Volume 223 Issue 4 Pages 329-335
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Catalytic methods for the production of carbon nanotubules have been developed based on the decomposition of acetylene on well-dispersed metal particles strongly adsorbed on a support. Cobalt on silica was found to be the best catalyst-support combination for the production of graphitic tubules. The method for the catalyst preparation and the reaction conditions were optimized. Straight and coiled carbon tubules were obtained with inner and outer diameter of 3-7 and 15-20 nm, respectively, and up to 30 mum in length. These nanotubules were not coated by amorphous carbon. Traces of amorphous carbon could be removed by hydrogen. High resolution electron microscopy images and electron diffraction patterns of the straight nanotubules were similar to those obtained by the arc-discharge method. Coiled nanotubules were revealed by TEM to be regular polygonized helices where the bends are caused by pairs of pentagon-heptagon carbon rings among the hexagonal network.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1994NT08000011 Publication Date (up) 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0009-2614; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.897 Times cited 405 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:99869 Serial 3595
Permanent link to this record
 
 
Author Gottschalck Andersen, L.; Bals, S.; Van Tendeloo, G.; Poulsen, H.F.; Liu, Y.L.
Title Transmission electron microscopy investigation of Bi-2223/Ag tapes Type A1 Journal article
Year 2001 Publication Physica: C : superconductivity Abbreviated Journal Physica C
Volume 353 Issue 3/4 Pages 251-257
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The microstructure of (Bi,Pb)2Sr2Ca2Cu3Ox (Bi-2223) tapes has been investigated by means of transmission electron microscopy (TEM) and high-resolution TEM. The emphasis has been placed on: (1) an examination of the grain morphology and size, (2) grain and colony boundary angles, which are formed during the tape processing, (3) a study of the grain boundaries on an atomic scale, including intergrowth investigations. Tapes with different process parameters have been compared with respect to the microstructure. A fully processed tape has on the average 50% thicker Bi-2223 grains than a tape after the first annealing. The angles of c-axis tilt grain boundaries are on average 14° and 26° for the fully processed tape and the tape after the first annealing, respectively. The intergrowth content (15%) and distribution are similar in these two tapes.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000168861100012 Publication Date (up) 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 13 Open Access
Notes Approved Most recent IF: 1.404; 2001 IF: 0.806
Call Number UA @ lucian @ c:irua:87591 Serial 3708
Permanent link to this record
 
 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V.
Title Vortex states in a mescopic superconducting triangle Type A1 Journal article
Year 2002 Publication Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C
Volume 369 Issue Pages 361-365
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000174200000066 Publication Date (up) 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 14 Open Access
Notes Approved Most recent IF: 1.404; 2002 IF: 0.912
Call Number UA @ lucian @ c:irua:40883 Serial 3885
Permanent link to this record
 
 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.
Title Vortex states in a multi-conoid superconducting nanosized bridge Type A1 Journal article
Year 2002 Publication Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C
Volume 369 Issue Pages 356-360
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000174200000065 Publication Date (up) 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.404 Times cited 1 Open Access
Notes Approved Most recent IF: 1.404; 2002 IF: 0.912
Call Number UA @ lucian @ c:irua:40882 Serial 3886
Permanent link to this record
 
 
Author de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon Type A1 Journal article
Year 1999 Publication The review of scientific instruments Abbreviated Journal Rev Sci Instrum
Volume 70 Issue 9 Pages 3661-3663
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000082289200026 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0034-6748; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.515 Times cited 5 Open Access
Notes Approved Most recent IF: 1.515; 1999 IF: 1.293
Call Number UA @ lucian @ c:irua:103487 Serial 48
Permanent link to this record
 
 
Author Lamoen, D.; Persson, B.N.J.
Title Adsorption of potassium and oxygen on graphite: a theoretical study Type A1 Journal article
Year 1998 Publication Journal Of Chemical Physics Abbreviated Journal J Chem Phys
Volume 108 Issue Pages 3332-3341
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000074379600032 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-9606; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.965 Times cited 91 Open Access
Notes Approved Most recent IF: 2.965; 1998 IF: 3.147
Call Number UA @ lucian @ c:irua:19420 Serial 64
Permanent link to this record
 
 
Author Barnabé, A.; Millange, F.; Maignan, A.; Hervieu, M.; Raveau, B.; Van Tendeloo, G.; Laffez, P.
Title Barium-based manganites Ln1-xBaxMnO3 with Ln = {Pr, La}: phase transitions and magnetoresistance properties Type A1 Journal article
Year 1998 Publication Chem. mater. Abbreviated Journal Chem Mater
Volume 10 Issue Pages 252-259
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000071624400037 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.466 Times cited 48 Open Access
Notes Approved Most recent IF: 9.466; 1998 IF: 3.359
Call Number UA @ lucian @ c:irua:25689 Serial 220
Permanent link to this record
 
 
Author Vernochet, C.; Vannier, R.-N.; Huvé, M.; Pirovano, C.; Nowogrocki, G.; Mairesse, G.; Van Tendeloo, G.
Title Chemical, structural and electrical characterizations in the BIZNVOX family Type A1 Journal article
Year 2000 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem
Volume 10 Issue 12 Pages 2811-2817
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000165487800037 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 13 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:54757 Serial 351
Permanent link to this record
 
 
Author Jembrih-Simbürger, D.; Neelmeijer, C.; Schalm, O.; Fredrickx, P.; Schreiner, M.; De Vis, K.; Mäder, M.; Schryvers, D.; Caen, J.
Title The colour of silver stained glass : analytical investigations carried out with XRF, SEM/EDX, TEM and IBA Type A1 Journal article
Year 2002 Publication Journal of analytical atomic spectrometry Abbreviated Journal J Anal Atom Spectrom
Volume 17 Issue Pages 321-328
Keywords A1 Journal article; Art; Electron microscopy for materials research (EMAT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract Glass treated on its surface with silver compounds and an aluminosilicate, such as ochre or clay, at higher temperatures (between 550 and 650 °C) accepts a wide variety of a yellow colour. It is the aim of this study to investigate the parameters of the manufacturing process affecting the final colour of silver stained glass and to correlate them with the final colour and colour intensity. Therefore, defined mixtures of ochre and a silver compound (AgCl, AgNO3, Ag2SO4, Ag3PO4, Ag2O) were prepared and applied on soda-lime glass. The firing process was modified within the range from 563 to 630 °C and glass samples were analysed after treatment with energy dispersive X-ray fluorescence analysis (EDXRF), scanning electron microscopy (SEM/EDX), transmission electron microscopy (TEM), as well as ion beam analysis (IBA) with an external beam. Within the scope of IBA simultaneous measurements using particle-induced X-ray emission (PIXE), particle-induced gamma-ray emission (PIGE), and Rutherford backscattering spectrometry (RBS) were carried out in order to obtain the thickness of the Ag-rich surface layer and the depth distribution of Ag. By means of TEM the microstructure of the silver particles was visualised. XRF results show that the lowest amount of Ag could be detected on glass samples treated with silver stain mixtures containing AgCl and Ag2O. A low kiln temperature (e.g. 563 °C) results in a higher silver concentration at the surface and lower penetration depths. Furthermore, the results obtained with SEM/EDX at cross-sections of the glass samples could be confirmed by PIXE, PIGE, RBS, and TEM.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000175158900001 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-9477;1364-5544; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.379 Times cited 42 Open Access
Notes Approved Most recent IF: 3.379; 2002 IF: 4.250
Call Number UA @ lucian @ c:irua:48775 Serial 395
Permanent link to this record
 
 
Author Luhrs, C.C.; Molins, E.; Van Tendeloo, G.; Beltran-Porter, D.; Fuertes, A.
Title Crystal structure of Bi6Sr8-xCa3+xO22(-0.5\leq x\leq1.7): a mixed valence bismuth oxide related to perovskite Type A1 Journal article
Year 1998 Publication Chemistry of materials Abbreviated Journal Chem Mater
Volume 10 Issue 7 Pages 1875-1881
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The crystal structure of BiSr8-xCa3+xO22 has been determined by single-crystal X-ray diffraction. This phase is the same as Bi9Sr11Ca5Oy that was previously studied by several authors as a secondary phase in the Bi-Sr-Ca-Cu-O system and coexists in thermodynamic equilibrium with the superconductors Bi2Sr2CuO6 and Bi2Sr2CaCu2O8 It crystallizes in the monoclinic space group P2(1)/c, with cell parameters a 11.037(3) Angstrom, b = 5.971(2) Angstrom, c = 19.703(7) Angstrom, beta = 101.46(3)degrees Z = 2. The structure was solved by direct methods and full-matrix least-squares refinement. It is built up by perovskite-related blocks of composition [Sr8-xBi2Ca3+xO16] that intergrow with double rows [Bi4O6] running along b. The perovskite blocks are formed by groups of five octahedra that are shifted from each other 3/2 root 2a(p) along [110](p) (a(p) being the parameter of the cubic perovskite subcell) in a zigzag configuration and are aligned with this direction parallel to the one forming an angle of 25" with the c axis. In turn, the perovskite blocks [Sr8-xBi2Ca3+xO16] are shifted from each other 1/2 of both a(p) and root 2a(p) along [100](p) and [110](p), respectively. In the double rows, two trivalent bismuth atoms are placed, forming dimeric anion complexes [Bi2O6].(6-).6- The oxygen atoms around bismuth in these dimers are placed in the vertexes of a distorted trigonal bipyramid, with one vacant position that would be occupied by the lone pairs characteristic for the electronic configuration of Bi(III). The B sites in the perovskite blocks are occupied by pentavalent bismuth atoms and calcium atoms; the remaining Sr and Ca ions occupy the A sites of the perovskite blocks with coordination numbers with oxygen ranging from 10 to 12. The mean valence for Bi is +3.67 [33.3% of Bi(V) and 66.7% of Bi(III)]. The oxygen vacancies are located in the boundaries between domains having the two possible configurations of the perovskite subcell as in the anionic superconductor Bi3BaO5.5. The oxidation of Bi6Sr8-xCa3+xO22 at 650 degrees C allows the complete filling of the oxygen vacancies to form the double perovskite (Sr2-xCax)Bi1.4Ca0.6O6 that shows 92.5% of bismuth in +5 oxidation state. The experimental high-resolution electon microscopy image and the electron diffraction pattern of powder samples along the [010]* zone axis are in good agreement with those calculated from the structural model obtained by single-crystal X-ray diffraction. The material is almost free of defects and the occurrence of planar defects is very exceptional.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000075019300023 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 9.466 Times cited 6 Open Access
Notes Approved Most recent IF: 9.466; 1998 IF: 3.359
Call Number UA @ lucian @ c:irua:104328 Serial 570
Permanent link to this record
 
 
Author Radaelli, P.G.; Marezio, M.; Tholence, J.L.; Debrion, S.; Santoro, A.; Huang, Q.; Capponi, J.J.; Chaillout, C.; Krekels, T.; Van Tendeloo, G.
Title Crystal-structure of the double-hg-layer copper-oxide superconductor (Hg,Pr)2Ba2(Y,Ca)Cu2O8-\deltaas a function of doping Type A1 Journal article
Year 1995 Publication The journal of physics and chemistry of solids Abbreviated Journal J Phys Chem Solids
Volume 56 Issue 10 Pages 1471-1478
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The crystal structure of the newly discovered double-Hg-layer copper oxide superconductor (Hg, Pr)(2)Ba-2(Y, Ca)Cu2O8-delta was studied as a function of chemical doping using neutron and electron diffraction and high-resolution transmission electron microscopy (HREM). Rietveld refinements of the structural parameters from neutron powder diffraction data indicate that the oxygen site O3 on the mercury plane is highly defective, being both partially occupied and displaced from the high-symmetry position. The variable concentration of oxygen vacancies partially compensates for the cation doping and, together with the O3 displacement field, makes some of the Hg atoms acquire an unusual pyramidal coordination. HREM images confirm that the structure is of the '2212' type, with very few defects. In some grains, faint superstructure reflections were evidenced by electron diffraction, suggesting that both the oxygen vacancies and the O3 displacement field may order at least on a local scale.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1995RR95600025 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3697; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.853 Times cited 16 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:104423 Serial 574
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.
Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 77 Issue 4 Pages 507-509
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000088225400016 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 44 Open Access
Notes Approved Most recent IF: 3.411; 2000 IF: 3.906
Call Number UA @ lucian @ c:irua:103448 Serial 712
Permanent link to this record
 
 
Author Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K.
Title Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures Type A1 Journal article
Year 1999 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
Volume 85 Issue Pages 6625-6631
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000079871200053 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 16 Open Access
Notes Approved Most recent IF: 2.068; 1999 IF: 2.275
Call Number UA @ lucian @ c:irua:24444 Serial 743
Permanent link to this record
 
 
Author Loquet, J.-P.; Perret, J.; Fompeyrine, J.; Mächler, E.; Seo, J.W.; Van Tendeloo, G.
Title Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain Type A1 Journal article
Year 1998 Publication Nature Abbreviated Journal Nature
Volume 394 Issue Pages 453-456
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000075080400044 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0028-0836; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 40.137 Times cited 404 Open Access
Notes Approved Most recent IF: 40.137; 1998 IF: 28.833
Call Number UA @ lucian @ c:irua:25676 Serial 757
Permanent link to this record
 
 
Author Verbeeck, J.; Lebedev, O.I.; Van Tendeloo, G.; Silcox, J.; Mercey, B.; Hervieu, M.; Haghiri-Gosnet, A.M.
Title Electron energy-loss spectroscopy study of a (LaMnO3)8(SrMnO3)4 heterostructure Type A1 Journal article
Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 79 Issue 13 Pages 2037-2039
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract An epitaxially grown heterostructure consisting of alternating layers of LaMnO3 (8 unit cells) and SrMnO3 (4 unit cells) on a SrTiO3 substrate has been studied by a combination of electron energy-loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) on an atomic scale. Excitation edges of all elements are captured with subnanometer spatial accuracy, and parametrized to obtain chemical profiles. The fine-edge structure of O K and Mn L-2,L-3 edges are interpreted as signatures of the local electronic structure and show a spatial modulation of the concentration of holes with O 2p character. The chemical concentration is found to be different for the bottom and top interface of a SrMnO3 layer. HRTEM complements the EELS results and confirms the asymmetry of the interfaces. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000171015200036 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 19 Open Access
Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
Call Number UA @ lucian @ c:irua:54799UA @ admin @ c:irua:54799 Serial 933
Permanent link to this record
 
 
Author Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J.
Title An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) Type A1 Journal article
Year 1996 Publication Macromolecules Abbreviated Journal Macromolecules
Volume 29 Issue 5 Pages 1554-1561
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos A1996TY13900024 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0024-9297;1520-5835; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.8 Times cited 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15452 Serial 939
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
Volume 120 Issue 1-4 Pages 186-189
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1996VZ24500040 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 
 
Author Yandouzi, M.; Toth, L.; Vasudevan, V.; Cannaerts, M.; van Haesendonck, C.; Schryvers, D.
Title Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer Type A1 Journal article
Year 2000 Publication Philosophical magazine letters Abbreviated Journal Phil Mag Lett
Volume 80 Issue Pages 719-724
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000165158000003 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0839;1362-3036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.941 Times cited 2 Open Access
Notes Approved Most recent IF: 0.941; 2000 IF: 1.504
Call Number UA @ lucian @ c:irua:48375 Serial 1072
Permanent link to this record
 
 
Author Razavi, F.S.; Gross, G.; Habermeier, H.-U.; Lebedev, O.; Amelinckx, S.; Van Tendeloo, G.; Vigliante, A.
Title Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films Type A1 Journal article
Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 76 Issue 2 Pages 155-157
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000084541000009 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 91 Open Access
Notes Approved Most recent IF: 3.411; 2000 IF: 3.906
Call Number UA @ lucian @ c:irua:99441 Serial 1073
Permanent link to this record
 
 
Author Han, Z.; Ni, J.; Smits, P.; Underhill, C.; Xie, B.; Chen, Y.; Liu, N.; Tylzanowski, P.; Parmelee, D.; Feng, P.; Ding, I.; Gao, F.; Gentz, R.; Huylebroeck, D.; Merregaert, J.; Zhang, L.
Title Extracellular matrix protein 1 (ECM1) has angiogenic properties and is expressed by breast tumor cells Type A1 Journal article
Year 2001 Publication The FASEB journal Abbreviated Journal
Volume 15 Issue Pages 988-994
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bethesda, Md Editor
Language Wos 000167959300013 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6860; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 94 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:33805 Serial 1161
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Author Maignan, A.; Martin, C.; Van Tendeloo, G.; Hervieu, M.; Raveau, B.
Title Ferromagnetism and magnetoresistance in monolayered manganites Ca2-xLnxMnO4 Type A1 Journal article
Year 1998 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem
Volume 8 Issue 11 Pages 2411-2416
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000076974900019 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 30 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:25684 Serial 1182
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Author Lei, C.H.; Van Tendeloo, G.; Lisoni, J.G.; Siegert, M.; Schubert, J.
Title Growth kinetic of MgO film on r-plane of sapphire: microstructural study Type A1 Journal article
Year 2001 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 226 Issue 2/3 Pages 419-429
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000169535100029 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 7 Open Access
Notes Approved Most recent IF: 1.751; 2001 IF: 1.283
Call Number UA @ lucian @ c:irua:54783 Serial 1391
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Author Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B.
Title High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing Type A1 Journal article
Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 72 Issue 22 Pages 2877-2879
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000075273700034 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 16 Open Access
Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
Call Number UA @ lucian @ c:irua:29684 Serial 1447
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Author Van Tendeloo, G.
Title High resolution electron microscopy in materials research Type A1 Journal article
Year 1998 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem
Volume 8 Issue 4 Pages 797-808
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000073072600001 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 8 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:25657 Serial 1451
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Author Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C.
Title High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs Type A1 Journal article
Year 1999 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 85 Issue 4 Pages 2119-2123
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000078403000017 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 6 Open Access
Notes Approved Most recent IF: 2.068; 1999 IF: 2.275
Call Number UA @ lucian @ c:irua:103977 Serial 1455
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Author Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M.
Title Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays Type A1 Journal article
Year 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 75 Issue 19 Pages 2912-2914
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000083483900014 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 481 Open Access
Notes Approved Most recent IF: 3.411; 1999 IF: 4.184
Call Number UA @ lucian @ c:irua:29643 Serial 1484
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Author Schryvers, D.; Lahjouji, D.E.; Slootmaekers, B.; Potapov, P.L.
Title HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys Type A1 Journal article
Year 1996 Publication Scripta metallurgica et materialia Abbreviated Journal Scripta Mater
Volume 35 Issue Pages 1235-1241
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos A1996VL92800019 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6462; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.224 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15427 Serial 1506
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Author Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type A1 Journal article
Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 90 Issue 1 Pages 167-174
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000169361100023 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 97 Open Access
Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
Call Number UA @ lucian @ c:irua:102855 Serial 1587
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Author Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
Title InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy Type A1 Journal article
Year 1992 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 60 Issue Pages 868-870
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos A1992HD74800027 Publication Date (up) 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.302 Times cited 20 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4089 Serial 1590
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