|
Records |
Links |
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
|
|
Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
|
|
Volume |
164 |
Issue |
|
Pages |
443-446 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
London |
Editor |
|
|
|
Language |
|
Wos |
000166835300094 |
Publication Date ![sorted by Publication Date field, ascending order (up)](img/sort_asc.gif) |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
|
Permanent link to this record |
|
|
|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
|
|
Volume |
4 |
Issue |
1/3 |
Pages |
117-119 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
|
|
Language |
|
Wos |
000167727200028 |
Publication Date ![sorted by Publication Date field, ascending order (up)](img/sort_asc.gif) |
2002-10-14 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.359 |
Times cited |
6 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
|
|
Call Number |
UA @ lucian @ c:irua:94968 |
Serial |
3602 |
|
Permanent link to this record |