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Author Potapov, P.L.; Tirry, W.; Schryvers, D.; Sivel, V.G.M.; Wu, M.-Y.; Aslanidis, D.; Zandbergen, H. pdf  doi
openurl 
  Title Cross-section transmission electron microscopy characterization of the near-surface structure of medical Nitinol superelastic tubing Type A1 Journal article
  Year 2007 Publication Journal of materials science: materials in medicine Abbreviated Journal J Mater Sci-Mater M  
  Volume 18 Issue 3 Pages 483-492  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000244689700009 Publication Date 2007-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4530;1573-4838; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.325 Times cited 14 Open Access  
  Notes Gao; Fwo Approved Most recent IF: 2.325; 2007 IF: 1.581  
  Call Number UA @ lucian @ c:irua:63484 Serial 547  
Permanent link to this record
 

 
Author Bals, S.; Van Aert, S.; Van Tendeloo, G. pdf  doi
openurl 
  Title High resolution electron tomography Type A1 Journal article
  Year 2013 Publication Current opinion in solid state and materials science Abbreviated Journal Curr Opin Solid St M  
  Volume 17 Issue 3 Pages 107-114  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Reaching atomic resolution in 3D has been the ultimate goal in the field of electron tomography for many years. Significant progress, both on the theoretical as well as the experimental side has recently resulted in several exciting examples demonstrating the ability to visualise atoms in 3D. In this paper, we will review the different steps that have pushed the resolution in 3D to the atomic level. A broad range of methodologies and practical examples together with their impact on materials science will be discussed. Finally, we will provide an outlook and will describe future challenges in the field of high resolution electron tomography.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000323869800003 Publication Date 2013-03-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-0286; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 6.938 Times cited 24 Open Access  
  Notes Fwo; 312483 Esteem; Countatoms; Approved Most recent IF: 6.938; 2013 IF: 7.167  
  Call Number UA @ lucian @ c:irua:109454 Serial 1457  
Permanent link to this record
 

 
Author Zelonka, K.; Sayer, M.; Freundorfer, A.P.; Hadermann, J. pdf  doi
openurl 
  Title Hydrothermal processing of barium strontium titanate sol-gel composite thin films Type A1 Journal article
  Year 2006 Publication Journal of materials science Abbreviated Journal J Mater Sci  
  Volume 41 Issue 12 Pages 3885-3897  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000239022100043 Publication Date 2006-04-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.599 Times cited 10 Open Access  
  Notes Approved Most recent IF: 2.599; 2006 IF: 0.999  
  Call Number UA @ lucian @ c:irua:60566 Serial 1539  
Permanent link to this record
 

 
Author Pereira, J.M.; Peeters, F.M.; Chaves, A.; Farias, G.A. pdf  doi
openurl 
  Title Klein tunneling in single and multiple barriers in graphene Type A1 Journal article
  Year 2010 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 25 Issue 3 Pages 033002,1-033002,9  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We review the transmission properties of carriers interacting with potential barriers in graphene. The tunneling of electrons and holes in quantum structures in graphene is found to display features that are in marked contrast with those of other systems. In particular, the interaction between the carriers with electrostatic potential barriers can be related to the propagation of electromagnetic waves in media with negative refraction indices, also known as metamaterials. This behavior becomes evident as one calculates the time evolution of wavepackets propagating across the barrier interface. In addition, we discuss the effect of trigonal warping on the tunneling through potential barriers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000274318300004 Publication Date 2010-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited 83 Open Access  
  Notes ; We want to acknowledge our collaborators in this work: P Vasilopoulos and M Barbier. This work was supported by the Brazilian Council for Research (CNPq), the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 2.305; 2010 IF: 1.333  
  Call Number UA @ lucian @ c:irua:80961 Serial 1764  
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Author Khalil-Allafi, J.; Amin-Ahmadi, B. doi  openurl
  Title Multiple-step martensitic transformations in the Ni51Ti49 single crystal Type A1 Journal article
  Year 2010 Publication Journal of materials science Abbreviated Journal J Mater Sci  
  Volume 45 Issue 23 Pages 6440-6445  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Multiple-step martensitic transformations of an aged Ni51Ti49 single crystal using calorimetric method were investigated. Results show that for short aging times (1045 min) multiple-step martensitic transformations on cooling occur in two steps. Applying intermediate aging times (1.254 h) results in three steps and long aging times (more than 8 h) lead to two-step martensitic transformations again. This behavior has not been recognized in NiTi single crystals in literatures. It can be related to the heterogeneity of composition and stress fields around Ni4Ti3 precipitates.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000282429400021 Publication Date 2010-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.599 Times cited 5 Open Access  
  Notes Approved Most recent IF: 2.599; 2010 IF: 1.859  
  Call Number UA @ lucian @ c:irua:122046 Serial 2231  
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Author Vast, L.; Carpentier, L.; Lallemand, F.; Colomer, J.-F.; Van Tendeloo, G.; Fonseca, A.; Nagy, J.B.; Mekhalif, Z.; Delhalle, J. pdf  doi
openurl 
  Title Multiwalled carbon nanotubes functionalized with 7-octenyltrichlorosilane and n-octyltrichlorosilane: dispersion in Sylgard®184 silicone and Youngs modulus Type A1 Journal article
  Year 2009 Publication Journal of materials science Abbreviated Journal J Mater Sci  
  Volume 44 Issue 13 Pages 3476-3482  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Sylgard®184/multiwalled carbon nanotube (MWNT) composites have been prepared by in situ polymerization using purified and functionalized multiwalled carbon nanotubes (f-MWNTs) as fillers. Surface modification of the MWNTs has been carried out by silanization with 7-octenyltrichlorosilane (7OTCS) and n-octyltrichlorosilane (nOTCS). The modification and dispersion of the carbon nanotubes in composites were characterized by X-ray photoelectron spectroscopy (XPS), transmission electron spectroscopy (TEM), and high-resolution transmission electron spectroscopy (HRTEM). Youngs modulus results were derived from indentation testing. It is shown that the terminal-vinyl group of 7OTCS molecules plays an essential role for both the dispersion of the f-MWNTs in the composite and its mechanical properties. At loading as low as 0.2 wt%, the Youngs modulus is shown to increase up to 50%. This is interpreted as resulting from a combination of the good compatibility in the forming silicone matrix of the MWNTs coated with a siloxane network, on the one hand, and the covalent links created between the terminal-vinyl groups and the host matrix in formation, on the other hand.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000267153200022 Publication Date 2009-04-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.599 Times cited 16 Open Access  
  Notes Iuap Approved Most recent IF: 2.599; 2009 IF: 1.471  
  Call Number UA @ lucian @ c:irua:77844 Serial 2245  
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Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. pdf  doi
openurl 
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond  
  Volume 11 Issue 11 Pages 1194-1202  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.  
  Address  
  Corporate Author Thesis  
  Publisher Inst Materials Place of Publication (up) London Editor  
  Language Wos A1995TQ95100016 Publication Date 2014-01-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.995 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95911 Serial 2654  
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Author Barbier, M.; Vasilopoulos, P.; Peeters, F.M. pdf  doi
openurl 
  Title Single-layer and bilayer graphene superlattices: collimation, additional Dirac points and Dirac lines Type A1 Journal article
  Year 2010 Publication Philosophical transactions of the Royal Society : mathematical, physical and engineering sciences Abbreviated Journal Philos T R Soc A  
  Volume 368 Issue 1932 Pages 5499-5524  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We review the energy spectrum and transport properties of several types of one-dimensional superlattices (SLs) on single-layer and bilayer graphene. In single-layer graphene, for certain SL parameters an electron beam incident on an SL is highly collimated. On the other hand, there are extra Dirac points generated for other SL parameters. Using rectangular barriers allows us to find analytical expressions for the location of new Dirac points in the spectrum and for the renormalization of the electron velocities. The influence of these extra Dirac points on the conductivity is investigated. In the limit of δ-function barriers, the transmission T through and conductance G of a finite number of barriers as well as the energy spectra of SLs are periodic functions of the dimensionless strength P of the barriers, Graphic, with vF the Fermi velocity. For a KronigPenney SL with alternating sign of the height of the barriers, the Dirac point becomes a Dirac line for P = π/2+nπ with n an integer. In bilayer graphene, with an appropriate bias applied to the barriers and wells, we show that several new types of SLs are produced and two of them are similar to type I and type II semiconductor SLs. Similar to single-layer graphene SLs, extra Dirac points are found in bilayer graphene SLs. Non-ballistic transport is also considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000283660000011 Publication Date 2010-11-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-503X;1471-2962; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.97 Times cited 64 Open Access  
  Notes ; This work was supported by IMEC, the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP) and the Canadian NSERC through grant no. OGP0121756. ; Approved Most recent IF: 2.97; 2010 IF: 2.459  
  Call Number UA @ lucian @ c:irua:85597 Serial 3023  
Permanent link to this record
 

 
Author Xu, W.; Peeters, F.M.; Devreese, J.T. openurl 
  Title Warm-electron transport in a two-dimensional semiconductor Type A1 Journal article
  Year 1992 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 7 Issue Pages 1251-1256  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos A1992JT73000006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:2915 Serial 3903  
Permanent link to this record
 

 
Author Zebrowski, D.P.; Peeters, F.M.; Szafran, B. pdf  doi
openurl 
  Title Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots Type A1 Journal article
  Year 2017 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 32 Issue 6 Pages 065016  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000402405800007 Publication Date 2017-04-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.305 Times cited Open Access  
  Notes ; This work was supported by the National Science Centre according to decision DEC-2013/11/B/ST3/03837 and by the Flemish Science Foundation (FWO-VL). ; Approved Most recent IF: 2.305  
  Call Number UA @ lucian @ c:irua:144238 Serial 4646  
Permanent link to this record
 

 
Author Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. pdf  doi
openurl 
  Title The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography Type A1 Journal article
  Year 2011 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 26 Issue 12 Pages 1-10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) London Editor  
  Language Wos 000300151300010 Publication Date 2011-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited Open Access  
  Notes Approved Most recent IF: 2.305; 2011 IF: 1.723  
  Call Number UA @ lucian @ c:irua:136427 Serial 4508  
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Author Liu, Y.-X.; Zhang, Y.-R.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Electromagnetic effects in high-frequency large-area capacitive discharges : a review Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 020801  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In traditional capacitively coupled plasmas, the discharge can be described by an electrostatic model, in which the Poisson equation is employed to determine the electrostatic electric field. However, current plasma reactors are much larger and driven at a much higher frequency. If the excitation wavelength k in the plasma becomes comparable to the electrode radius, and the plasma skin depth d becomes comparable to the electrode spacing, the electromagnetic (EM) effects will become significant and compromise the plasma uniformity. In this regime, capacitive discharges have to be described by an EM model, i.e., the full set of Maxwells equations should be solved to address the EM effects. This paper gives an overview of the theory, simulation and experiments that have recently been carried out to understand these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel display industries. Furthermore, some methods for improving the plasma uniformity are also described and compared.  
  Address  
  Corporate Author Thesis  
  Publisher A v s amer inst physics Place of Publication (up) Melville Editor  
  Language Wos 000355739500007 Publication Date 2015-02-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:123541 Serial 903  
Permanent link to this record
 

 
Author van Cleempoel, A.; Joutsensaari, J.; Kauppinen, E.; Gijbels, R.; Claeys, M. doi  openurl
  Title Aerosol synthesis and characterization of ultrafine fullerene particles Type A1 Journal article
  Year 1998 Publication Fullerene science and technology Abbreviated Journal Fullerene Sci Techn  
  Volume 6 Issue 4 Pages 599-627  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York Editor  
  Language Wos 000074859200001 Publication Date 2008-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-122X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:24038 Serial 78  
Permanent link to this record
 

 
Author van Cleempoel, A.; Gijbels, R.; Zhu, D.; Claeys, M.; Richter, H.; Fonseca, A. doi  openurl
  Title Quantitative determination of C60 and C70 in soot extracts by high performance liquid chromatography and mass spectrometric characterization Type A1 Journal article
  Year 1996 Publication Fullerene science and technology Abbreviated Journal Fuller Nanotub Car N  
  Volume 4 Issue Pages 1001-1017  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A quantitative HPLC method was applied to determine the amounts of C-60 and C-70 present in extracts of soot produced in the electric arc reactor and in flames. The combustion method was found to yield a higher C-70/C-60 ratio (0.67) compared with the evaporation experiment where the C-70/C-60 ratio amounts to 0.27.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York Editor  
  Language Wos A1996VK45000015 Publication Date 2007-06-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1536-383X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.836 Times cited 6 Open Access  
  Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #  
  Call Number UA @ lucian @ c:irua:15612 Serial 2751  
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Author Dubourdieu, C.; Rauwel, E.; Roussel, H.; Ducroquet, F.; Hollaender, B.; Rossell, M.; Van Tendeloo, G.; Lhostis, S.; Rushworth, S. pdf  doi
openurl 
  Title Addition of yttrium into HfO2 films: microstructure and electrical properties Type A1 Journal article
  Year 2009 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 27 Issue 3 Pages 503-514  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000265739100016 Publication Date 2009-05-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 29 Open Access  
  Notes Approved Most recent IF: 1.374; 2009 IF: 1.297  
  Call Number UA @ lucian @ c:irua:77054 Serial 58  
Permanent link to this record
 

 
Author Herregods, S.J.F.; Mertens, M.; Van Havenbergh, K.; Van Tendeloo, G.; Cool, P.; Buekenhoudt, A.; Meynen, V. pdf  doi
openurl 
  Title Controlling pore size and uniformity of mesoporous titania by early stage low temperature stabilization Type A1 Journal article
  Year 2013 Publication Journal of colloid and interface science Abbreviated Journal J Colloid Interf Sci  
  Volume 391 Issue Pages 36-44  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)  
  Abstract The control of the formation process during and after self-assembly is of utmost importance to achieve well structured, controlled template-assisted mesoporous titania materials with the desired properties for various applications via the evaporation induced self-assembly method (EISA). The present paper reports on the large influence of the thermal stabilization and successive template removal on the pore structure of a mesostructured TiO2 material using the diblock copolymer Brij 58 as surfactant. A controlled thermal stabilization (temperature and duration) allows one to tailor the final pore size and uniformity much more precise by influencing the self-assembly of the template. Moreover, also the successive thermal template removal needs to be controlled in order to avoid a structural collapse. N2-sorption, TGA, TEM, FT-Raman spectroscopy, and small angle wide angle XRD have been used to follow the crystal growth and mesostructure organization after thermal stabilization and after thermal template removal, revealing its effect on the final pore structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000312039000006 Publication Date 2012-10-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-9797; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.233 Times cited 12 Open Access  
  Notes Approved Most recent IF: 4.233; 2013 IF: 3.552  
  Call Number UA @ lucian @ c:irua:101757 Serial 506  
Permanent link to this record
 

 
Author Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. pdf  doi
openurl 
  Title Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Type A1 Journal article
  Year 1999 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 17 Issue 1 Pages 249-255  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000078136300038 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.374; 1999 IF: 1.742  
  Call Number UA @ lucian @ c:irua:29689 Serial 581  
Permanent link to this record
 

 
Author Kolev, I.; Bogaerts, A. doi  openurl
  Title Detailed numerical investigation of a DC sputter magnetron Type A1 Journal article
  Year 2006 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 34 Issue 3 Pages 886-894  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000238582700019 Publication Date 2006-06-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.052 Times cited 28 Open Access  
  Notes Approved Most recent IF: 1.052; 2006 IF: 1.144  
  Call Number UA @ lucian @ c:irua:58198 Serial 667  
Permanent link to this record
 

 
Author Yan, M.; Bogaerts, A.; Gijbels, R. doi  openurl
  Title Evolution of charged particle densities after laser-induced photodetachment in a strongly electronegative RF discharge Type A1 Journal article
  Year 2002 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 30 Issue 1 Pages 132-133  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000175845900065 Publication Date 2002-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.052 Times cited Open Access  
  Notes Approved Most recent IF: 1.052; 2002 IF: 1.170  
  Call Number UA @ lucian @ c:irua:40186 Serial 1097  
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Author Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R. doi  openurl
  Title Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment Type A1 Journal article
  Year 1998 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 16 Issue 4 Pages 2400-2410  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000074852700061 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 12 Open Access  
  Notes Approved Most recent IF: 1.374; 1998 IF: 1.612  
  Call Number UA @ lucian @ c:irua:24124 Serial 1634  
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Author de Bleecker, K.; Bogaerts, A.; Goedheer, W.; Gijbels, R. doi  openurl
  Title Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model Type A1 Journal article
  Year 2004 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 32 Issue 2 Pages 691-698  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000222278400026 Publication Date 2004-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.052 Times cited 29 Open Access  
  Notes Approved Most recent IF: 1.052; 2004 IF: 1.042  
  Call Number UA @ lucian @ c:irua:46379 Serial 1732  
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Author Kong, M.; Ferreira, W.P.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Magnetic field dependence of the normal mode spectrum of a planar complex plasma cluster Type A1 Journal article
  Year 2004 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 32 Issue 2,2 Pages 569-572  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000222278400007 Publication Date 2004-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.052 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.052; 2004 IF: 1.042  
  Call Number UA @ lucian @ c:irua:62453 Serial 1871  
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Author Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A. url  doi
openurl 
  Title Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 021310  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A two-dimensional hybrid Monte Carlofluid model, incorporating a full-wave solution of Maxwell's equations, is employed to describe the behavior of high frequency (HF) and very high frequency capacitively coupled plasmas (CCPs), operating both at single frequency (SF) and dual frequency (DF) in a CF4/O2 gas mixture. First, the authors investigate the plasma composition, and the simulations reveal that besides CF4 and O2, also COF2, CF3, and CO2 are important neutral species, and CF+3 and F− are the most important positive and negative ions. Second, by comparing the results of the model with and without taking into account the electromagnetic effects for a SF CCP, it is clear that the electromagnetic effects are important, both at 27 and 60 MHz, because they affect the absolute values of the calculation results and also (to some extent) the spatial profiles, which accordingly affects the uniformity in plasma processing. In order to improve the plasma radial uniformity, which is important for the etch process, a low frequency (LF) source is added to the discharge. Therefore, in the major part of the paper, the plasma uniformity is investigated for both SF and DF CCPs, operating at a HF of 27 and 60 MHz and a LF of 2 MHz. For this purpose, the authors measure the etch rates as a function of position on the wafer in a wide range of LF powers, and the authors compare them with the calculated fluxes toward the wafer of the plasma species playing a role in the etch process, to explain the trends in the measured etch rate profiles. It is found that at a HF of 60 MHz, the uniformity of the etch rate is effectively improved by adding a LF power of 2 MHz and 300 W, while its absolute value increases by about 50%, thus a high etch rate with a uniform distribution is observed under this condition.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000355739500026 Publication Date 2015-01-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:122650 Serial 2107  
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Author Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R. doi  openurl
  Title Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Type A1 Journal article
  Year 2004 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 22 Issue 4 Pages 1524-1529  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000223322000075 Publication Date 2004-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 13 Open Access  
  Notes Approved Most recent IF: 1.374; 2004 IF: 1.557  
  Call Number UA @ lucian @ c:irua:47331 Serial 2137  
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Author Bogaerts, A.; Gijbels, R. doi  openurl
  Title Monte Carlo model for the argon ions and fast argon atoms in a radio-frequency discharge Type A1 Journal article
  Year 1999 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 27 Issue 5 Pages 1406-1415  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000083453000023 Publication Date 2002-08-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.052 Times cited 15 Open Access  
  Notes Approved Most recent IF: 1.052; 1999 IF: 1.085  
  Call Number UA @ lucian @ c:irua:28321 Serial 2197  
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Author Kolev, I.; Bogaerts, A. pdf  doi
openurl 
  Title Numerical study of the sputtering in a dc magnetron Type A1 Journal article
  Year 2009 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Phys Chem C  
  Volume 27 Issue 1 Pages 20-28  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Molecular dynamics simulations were used to investigate the size-dependent melting mechanism of nickel nanoclusters of various sizes. The melting process was monitored by the caloric curve, the overall cluster Lindemann index, and the atomic Lindemann index. Size-dependent melting temperatures were determined, and the correct linear dependence on inverse diameter was recovered. We found that the melting mechanism gradually changes from dynamic coexistence melting to surface melting with increasing cluster size. These findings are of importance in better understanding carbon nanotube growth by catalytic chemical vapor deposition as the phase state of the catalyst nanoparticle codetermines the growth mechanism.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000263299600018 Publication Date 2009-02-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.536 Times cited 66 Open Access  
  Notes Approved Most recent IF: 4.536; 2009 IF: 4.224  
  Call Number UA @ lucian @ c:irua:71634 Serial 2411  
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Author Herrebout, D.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J.; Vanhulsel, A. doi  openurl
  Title A one-dimensional fluid model for an acetylene rf discharge: a study of the plasma chemistry Type A1 Journal article
  Year 2003 Publication IEEE transactions on plasma science Abbreviated Journal Ieee T Plasma Sci  
  Volume 31 Issue Pages 659-664  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000184833400022 Publication Date 2003-08-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0093-3813; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.052 Times cited 26 Open Access  
  Notes Approved Most recent IF: 1.052; 2003 IF: 0.840  
  Call Number UA @ lucian @ c:irua:44021 Serial 2462  
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Author Neyts, E.C. pdf  doi
openurl 
  Title PECVD growth of carbon nanotubes : from experiment to simulation Type A1 Journal article
  Year 2012 Publication Journal of vacuum science and technology: B: micro-electronics processing and phenomena Abbreviated Journal  
  Volume 30 Issue 3 Pages 030803-030803,17  
  Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Nanostructured carbon materials show a tremendous variety in atomic structure, morphology, properties, and applications. As all properties are ultimately determined by the structure of the material, a thorough understanding of the growth mechanisms that give rise to the particular structure is critical. On many occasions, it has been shown that plasma enhanced growth can be strongly beneficial. This review will describe the authors current understanding of plasma enhanced growth of carbon nanotubes, the prototypical example of nanostructured carbon materials, as obtained from experiments, simulations, and modeling. Specific emphasis is put on where experiments and computational approaches correspond, and where they differ. Also, the current status on simulating PECVD growth of some other carbon nanomaterials is reviewed, including amorphous carbon, graphene, and metallofullerenes. Finally, computational challenges with respect to the simulation of PECVD growth are identified.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000305042000010 Publication Date 2012-04-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2166-2746; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 42 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:97166 Serial 2570  
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Author Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. doi  openurl
  Title Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates Type A1 Journal article
  Year 2012 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 30 Issue 1 Pages 01a127-01a127,10  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090]  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000298992800027 Publication Date 2011-12-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 41 Open Access  
  Notes Approved Most recent IF: 1.374; 2012 IF: 1.432  
  Call Number UA @ lucian @ c:irua:96253 Serial 2818  
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Author Liu, J.; Jin, J.; Deng, Z.; Huang, S.Z.; Hu, Z.Y.; Wang, L.; Wang, C.; Chen, L.H.; Li, Y.; Van Tendeloo, G.; Su, B.L.; doi  openurl
  Title Tailoring CuO nanostructures for enhanced photocatalytic property Type A1 Journal article
  Year 2012 Publication Journal of colloid and interface science Abbreviated Journal J Colloid Interf Sci  
  Volume 384 Issue Pages 1-9  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report on one-pot synthesis of various morphologies of CuO nanostructures. PEG200 as a structure directing reagent under the synergism of alkalinity by hydrothermal method has been employed to tailor the morphology of CuO nanostructures. The CuO products have been characterized by XRD, SEM, and TEM. The morphologies of the CuO nanostructures can be tuned from 10 (nanoseeds, nanoribbons) to 2D (nanoleaves) and to 3D (shuttle-like, shrimp-like, and nanoflowers) by changing the volume of PEG200 and the alkalinity in the reaction system. At neutral and relatively low alkalinity (OH-/Cu2+ <= 3), the addition of PEG200 can strongly influence the morphologies of the CuO nanostructures. At high alkalinity (OH/Cu2+ >= 4), PEG200 has no influence on the morphology of the CuO nanostructure. The different morphologies of the CuO nanostructures have been used for the photodecomposition of the pollutant rhodamine B (RhB) in water. The photocatalytic activity has been correlated with the different nanostructures of CuO. The 10 CuO nanoribbons exhibit the best performance on the RhB photodecomposition because of the exposed high surface energy {-121} crystal plane. The photocatalytic results show that the high energy surface planes of the CuO nanostructures mostly affect the photocatalytic activity rather than the morphology of the CuO nanostructures. Our synthesis method also shows it is possible to control the morphologies of nanostructures in a simple way. (C) 2012 Elsevier Inc. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (up) New York, N.Y. Editor  
  Language Wos 000308337700001 Publication Date 2012-06-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-9797; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.233 Times cited 105 Open Access  
  Notes Approved Most recent IF: 4.233; 2012 IF: 3.172  
  Call Number UA @ lucian @ c:irua:101796 Serial 3468  
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