|
Records |
Links |
|
Author |
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
90 |
Issue |
1 |
Pages |
167-174 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000169361100023 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
97 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
|
|
Call Number |
UA @ lucian @ c:irua:102855 |
Serial |
1587 |
|
Permanent link to this record |
|
|
|
|
Author |
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
|
|
Volume |
16 |
Issue |
3 |
Pages |
701-708 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000167407200011 |
Publication Date |
2008-03-06 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0884-2914;2044-5326; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.673 |
Times cited |
4 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.673; 2001 IF: 1.539 |
|
|
Call Number |
UA @ lucian @ c:irua:103926 |
Serial |
1588 |
|
Permanent link to this record |
|
|
|
|
Author |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
60 |
Issue |
|
Pages |
868-870 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1992HD74800027 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.302 |
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4089 |
Serial |
1590 |
|
Permanent link to this record |
|
|
|
|
Author |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
600 |
Issue |
26 |
Pages |
3256-3258 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1992JA80600019 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.302 |
Times cited |
32 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4102 |
Serial |
1591 |
|
Permanent link to this record |
|
|
|
|
Author |
Okhrimovskyy, A.; Bogaerts, A.; Gijbels, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Incorporating the gas flow in a numerical model of rf discharges in methane |
Type |
A1 Journal article |
|
Year |
2004 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
96 |
Issue |
6 |
Pages |
3070-3076 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000223720000005 |
Publication Date |
2004-09-02 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
11 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2004 IF: 2.255 |
|
|
Call Number |
UA @ lucian @ c:irua:48102 |
Serial |
1596 |
|
Permanent link to this record |
|
|
|
|
Author |
Kelchtermans, A.; Adriaensens, P.; Slocombe, D.; Kuznetsov, V.L.; Hadermann, J.; Riskin, A.; Elen, K.; Edwards, P.P.; Hardy, A.; Van Bael, M.K. |
![goto web page url](http://nano.uantwerpen.be/nanorefs/img/www.gif)
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Increasing the solubility limit for tetrahedral aluminium in ZnO:Al nanorods by variation in synthesis parameters |
Type |
A1 Journal article |
|
Year |
2015 |
Publication |
Journal of nanomaterials |
Abbreviated Journal |
J Nanomater |
|
|
Volume |
2015 |
Issue |
2015 |
Pages |
1-8 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Nanocrystalline ZnO:Al nanoparticles are suitable building blocks for transparent conductive layers. As the concentration of substitutional tetrahedral Al is an important factor for improving conductivity, here we aim to increase the fraction of substitutional Al. To this end, synthesis parameters of a solvothermal reaction yielding ZnO:Al nanorods were varied. A unique set of complementary techniques was combined to reveal the exact position of the aluminium ions in the ZnO lattice and demonstrated its importance in order to evaluate the potential of ZnO:Al nanocrystals as optimal building blocks for solution deposited transparent conductive oxide layers. Both an extension of the solvothermal reaction time and stirring during solvothermal treatment result in a higher total tetrahedral aluminium content in the ZnO lattice. However, only the longer solvothermal treatment effectively results in an increase of the substitutional positions aimed for. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000358516300001 |
Publication Date |
2015-07-12 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1687-4110;1687-4129; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.871 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
FWO; Methusalem |
Approved |
Most recent IF: 1.871; 2015 IF: 1.644 |
|
|
Call Number |
c:irua:124426 |
Serial |
1600 |
|
Permanent link to this record |
|
|
|
|
Author |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
Type |
A1 Journal article |
|
Year |
2011 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
99 |
Issue |
13 |
Pages |
132101,1-132101,3 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
A first-principles modeling approach is used to investigate the vibrational properties of HfO2. The calculated phonon density of states is compared to experimental results obtained from inelastic electron tunneling spectroscopy (IETS) of various metal-oxide-semiconductor devices with HfO2 gate stacks. This comparison provides deep insights into the nature of the signatures of the complicated IETS spectra and provides valuable structural information about the gate stack, such as the possible presence of oxygen vacancies in jet-vapour deposited HfO2. Important structural differences between the interface of atomic-layer or molecular-beam deposited HfO2 and the Si substrate are also revealed. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000295618000036 |
Publication Date |
2011-09-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2011 IF: 3.844 |
|
|
Call Number |
UA @ lucian @ c:irua:93611 |
Serial |
1606 |
|
Permanent link to this record |
|
|
|
|
Author |
Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
The influence of impurities on the performance of the dielectric barrier discharge |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
96 |
Issue |
9 |
Pages |
091501,1-091501,3 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
In this letter, we investigate the effect of various levels of nitrogen impurity on the electrical performance of an atmospheric pressure dielectric barrier discharge in helium. We illustrate the different current profiles that are obtained, which exhibit one or more discharge pulses per half cycle and evaluate their performance in ionizing the discharge and dissipating the power. It is shown that flat and broad current profiles perform the best in ionizing the discharge and use the least amount of power per generated charged particle. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000275246200008 |
Publication Date |
2010-03-04 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
28 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
|
|
Call Number |
UA @ lucian @ c:irua:80944 |
Serial |
1624 |
|
Permanent link to this record |
|
|
|
|
Author |
Rembeza, E.S.; Richard, O.; van Landuyt, J. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
|
Volume |
34 |
Issue |
10/11 |
Pages |
1527-1533 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000084625300006 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.446 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.446; 1999 IF: 0.840 |
|
|
Call Number |
UA @ lucian @ c:irua:29691 |
Serial |
1626 |
|
Permanent link to this record |
|
|
|
|
Author |
Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment |
Type |
A1 Journal article |
|
Year |
1998 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
|
|
Volume |
16 |
Issue |
4 |
Pages |
2400-2410 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000074852700061 |
Publication Date |
2002-07-27 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0734-2101; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.374 |
Times cited |
12 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.374; 1998 IF: 1.612 |
|
|
Call Number |
UA @ lucian @ c:irua:24124 |
Serial |
1634 |
|
Permanent link to this record |
|
|
|
|
Author |
Krstajić, P.; Peeters, F.M. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
|
|
Volume |
141 |
Issue |
6 |
Pages |
320-324 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000244006000004 |
Publication Date |
2006-11-30 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0038-1098; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
1.554 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.554; 2007 IF: 1.535 |
|
|
Call Number |
UA @ lucian @ c:irua:63747 |
Serial |
1637 |
|
Permanent link to this record |
|
|
|
|
Author |
Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
90 |
Issue |
3 |
Pages |
1429-1435 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000169868300052 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
|
|
Call Number |
UA @ lucian @ c:irua:54816 |
Serial |
1649 |
|
Permanent link to this record |
|
|
|
|
Author |
Mlinar, V.; Peeters, F.M. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots |
Type |
A1 Journal article |
|
Year |
2006 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
89 |
Issue |
26 |
Pages |
1-3 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000243157600032 |
Publication Date |
2006-12-28 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
16 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2006 IF: 3.977 |
|
|
Call Number |
UA @ lucian @ c:irua:62199 |
Serial |
1653 |
|
Permanent link to this record |
|
|
|
|
Author |
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
115 |
Issue |
18 |
Pages |
184503-184509 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000336919400048 |
Publication Date |
2014-05-14 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
34 |
Open Access |
|
|
|
Notes |
; Quentin Smets and Devin Verreck gratefully acknowledge the support of a Ph. D. stipend from IWT-Vlaanderen. This work was supported by imec's industrial affiliation program. The authors thank Kim Baumans, Johan Feyaerts, Johan De Cooman, Alireza Alian, and Jos Moonens for their support in process development; Bastien Douhard and Joris Delmotte for SIMS characterization; Alain Moussa for AFM characterization; Joris Van Laer and Tom Daenen for their support in electrical characterization; Kuo-Hsing Kao, Mehbuba Tanzid, and Ali Pourghaderi for their support in modeling. ; |
Approved |
Most recent IF: 2.068; 2014 IF: 2.183 |
|
|
Call Number |
UA @ lucian @ c:irua:118009 |
Serial |
1667 |
|
Permanent link to this record |
|
|
|
|
Author |
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device |
Type |
A1 Journal article |
|
Year |
2012 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
100 |
Issue |
11 |
Pages |
113513-113513,4 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >10(3) endurance and long retention at 150 degrees C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2+ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695078] |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000302204900091 |
Publication Date |
2012-03-17 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
29 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
|
|
Call Number |
UA @ lucian @ c:irua:98295 |
Serial |
1674 |
|
Permanent link to this record |
|
|
|
|
Author |
Dumpala, S.; Broderick, S.R.; Khalilov, U.; Neyts, E.C.; van Duin, A.C.T.; Provine, J.; Howe, R.T.; Rajan, K. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation |
Type |
A1 Journal article |
|
Year |
2015 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
106 |
Issue |
106 |
Pages |
011602 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
In this paper, we quantitatively investigate with atom probe tomography, the effect of temperature on the interfacial transition layer suboxide species due to the thermal oxidation of silicon. The chemistry at the interface was measured with atomic scale resolution, and the changes in chemistry and intermixing at the interface were identified on a nanometer scale. We find an increase of suboxide (SiOx) concentration relative to SiO2 and increased oxygen ingress with elevated temperatures. Our experimental findings are in agreement with reactive force field molecular dynamics simulations. This work demonstrates the direct comparison between atom probe derived chemical profiles and atomistic-scale simulations for transitional interfacial layer of suboxides as a function of temperature. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000347976900008 |
Publication Date |
2015-01-06 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951;1077-3118; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
19 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2015 IF: 3.302 |
|
|
Call Number |
c:irua:122300 |
Serial |
1679 |
|
Permanent link to this record |
|
|
|
|
Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
77 |
Issue |
26 |
Pages |
4307-4309 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000166120500021 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
|
|
Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
|
Permanent link to this record |
|
|
|
|
Author |
Čukarić, N.A.; Tadić, M.Z.; Partoens, B.; Peeters, F.M. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
The interband optical absorption in silicon quantum wells : application of the 30-band k . p model |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
104 |
Issue |
24 |
Pages |
242103 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
The interband optical absorption in Si/SiO2 quantum wells is calculated as function of the well width (W) and the evolution from an indirect to a direct gap material as function of the well width is investigated. In order to compute the electron states in the conduction band, the 30-band k . p model is employed, whereas the 6-band Luttinger-Kohn model is used for the hole states. We found that the effective direct band gap in the quantum well agrees very well with the W-2 scaling result of the single-band model. The interband matrix elements for linear polarized light oscillate with the quantum well width, which agrees qualitatively with a single band calculation. Our theoretical results indicate that the absorption can be maximized by a proper choice of the well width. However, the obtained absorption coefficients are at least an order of magnitude smaller than for a typical direct semiconductor even for a well width of 2 nm. (C) 2014 AIP Publishing LLC. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000337915000033 |
Publication Date |
2014-06-18 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951;1077-3118; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
; This work was supported by the Ministry of Education, Science, and Technological Development of Serbia, the Flemish fund for Scientific Research (FWO-Vl), and the Methusalem programme of the Flemish government. ; |
Approved |
Most recent IF: 3.411; 2014 IF: 3.302 |
|
|
Call Number |
UA @ lucian @ c:irua:118448 |
Serial |
1689 |
|
Permanent link to this record |
|
|
|
|
Author |
Shapoval, O.; Huehn, S.; Verbeeck, J.; Jungbauer, M.; Belenchuk, A.; Moshnyaga, V. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Interface-controlled magnetism and transport of ultrathin manganite films |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
113 |
Issue |
17 |
Pages |
17c711-3 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000319292800195 |
Publication Date |
2013-03-19 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
|
|
|
Notes |
Ifox; Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO; |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
|
|
Call Number |
UA @ lucian @ c:irua:109009UA @ admin @ c:irua:109009 |
Serial |
1692 |
|
Permanent link to this record |
|
|
|
|
Author |
Schryvers, D.; Goessens, C.; Safran, G.; Toth, L. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Internal calibration technique for HREM studies of nanoscale particles |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Microscopy research and technique
T2 – JOINT MEETING OF DUTCH SOC FOR ELECTRON MICROSCOPY / BELGIAN SOC FOR, ELECTRON MICROSCOPY / BELGIAN SOC FOR CELL BIOLOGY, DEC 10-11, 1992, ANTWERP, BELGIUM |
Abbreviated Journal |
Microsc Res Techniq |
|
|
Volume |
25 |
Issue |
2 |
Pages |
185-186 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1993LB60700015 |
Publication Date |
2005-02-23 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1059-910X;1097-0029; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.154 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:104488 |
Serial |
1700 |
|
Permanent link to this record |
|
|
|
|
Author |
Yang, W.; Chang, K.; Wu, X.G.; Zheng, H.Z.; Peeters, F.M.; |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport |
Type |
A1 Journal article |
|
Year |
2006 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
89 |
Issue |
13 |
Pages |
|
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000240875800069 |
Publication Date |
2006-09-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
10 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2006 IF: 3.977 |
|
|
Call Number |
UA @ lucian @ c:irua:61009 |
Serial |
1703 |
|
Permanent link to this record |
|
|
|
|
Author |
Milovanović, S.P.; Masir, M.R.; Peeters, F.M. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
105 |
Issue |
12 |
Pages |
123507 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied, we predict oscillations in the Hall and the bend resistance as function of the magnetic field, which are a consequence of quantum interference between the occupied snake states. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000343004400090 |
Publication Date |
2014-09-27 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951;1077-3118; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
18 |
Open Access |
|
|
|
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN and the Methusalem Foundation of the Flemish government. |
Approved |
Most recent IF: 3.411; 2014 IF: 3.302 |
|
|
Call Number |
UA @ lucian @ c:irua:121119 |
Serial |
1704 |
|
Permanent link to this record |
|
|
|
|
Author |
Hai, G.-Q.; Studart, N.; Peeters, F.M.; Koenraad, P.M.; Wolter, J.H. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
80 |
Issue |
|
Pages |
5809-5814 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1996VU98700039 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.183 |
Times cited |
40 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15789 |
Serial |
1712 |
|
Permanent link to this record |
|
|
|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
|
|
Volume |
148 |
Issue |
11 |
Pages |
G597-G601 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000171653100038 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0013-4651; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.259; 2001 IF: 2.033 |
|
|
Call Number |
UA @ lucian @ c:irua:103394 |
Serial |
1725 |
|
Permanent link to this record |
|
|
|
|
Author |
de Bleecker, K.; Bogaerts, A.; Goedheer, W.; Gijbels, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Investigation of growth mechanisms of clusters in a silane discharge with the use of a fluid model |
Type |
A1 Journal article |
|
Year |
2004 |
Publication |
IEEE transactions on plasma science |
Abbreviated Journal |
Ieee T Plasma Sci |
|
|
Volume |
32 |
Issue |
2 |
Pages |
691-698 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000222278400026 |
Publication Date |
2004-06-30 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0093-3813; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.052 |
Times cited |
29 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.052; 2004 IF: 1.042 |
|
|
Call Number |
UA @ lucian @ c:irua:46379 |
Serial |
1732 |
|
Permanent link to this record |
|
|
|
|
Author |
Krstajić, P.M.; Peeters, F.M.; Helm, M. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Landau levels and magnetopolaron effect in dilute GaAs:N |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Solid state communications |
Abbreviated Journal |
Solid State Commun |
|
|
Volume |
150 |
Issue |
33/34 |
Pages |
1575-1579 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electronphonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħωc. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000280949900019 |
Publication Date |
2010-06-05 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0038-1098; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
1.554 |
Times cited |
|
Open Access |
|
|
|
Notes |
; This work is supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles Program (IAP)-Belgian State Science Policy. M.H. is grateful to O. Drachenko and H. Schneider for numerous discussions. ; |
Approved |
Most recent IF: 1.554; 2010 IF: 1.981 |
|
|
Call Number |
UA @ lucian @ c:irua:84580 |
Serial |
1771 |
|
Permanent link to this record |
|
|
|
|
Author |
Berdiyorov, G.R.; Milošević, M.V.; Latimer, M.L.; Xiao, Z.L.; Kwok, W.K.; Peeters, F.M. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Large magnetoresistance oscillations in mesoscopic superconductors due to current-excited moving vortices |
Type |
A1 Journal article |
|
Year |
2012 |
Publication |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
|
|
Volume |
109 |
Issue |
5 |
Pages |
057004 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
We show in the case of a superconducting Nb ladder that a mesoscopic superconductor typically exhibits magnetoresistance oscillations whose amplitude and temperature dependence are different from those stemming from the Little-Parks effect. We demonstrate that these large resistance oscillations (as well as the monotonic background on which they are superimposed) are due to current-excited moving vortices, where the applied current in competition with the oscillating Meissner currents imposes or removes the barriers for vortex motion in an increasing magnetic field. Because of the ever present current in transport measurements, this effect should be considered in parallel with the Little-Parks effect in low-critical temperature (T-c) samples, as well as with recently proposed thermal activation of dissipative vortex-antivortex pairs in high-T-c samples. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000306994900024 |
Publication Date |
2012-07-31 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0031-9007;1079-7114; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
8.462 |
Times cited |
65 |
Open Access |
|
|
|
Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP) (theory) and by the U. S. Department of Energy (DOE) Award No. DE-FG02-06ER46334 (experiment). G. R. B. acknowledges individual grant from FWO-Vl. W. K. K. acknowledges support from DOE BES under Contract No. DE-AC02-06CH11357, which also funds Argonne's Center for Nanoscale Materials (CNM) where the focused-ion-beam milling was performed. ; |
Approved |
Most recent IF: 8.462; 2012 IF: 7.943 |
|
|
Call Number |
UA @ lucian @ c:irua:100832 |
Serial |
1780 |
|
Permanent link to this record |
|
|
|
|
Author |
Chen, Z.; Bogaerts, A. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Laser ablation of Cu and plume expansion into 1 atm ambient gas |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
97 |
Issue |
|
Pages |
063305,1-12 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000227767700009 |
Publication Date |
2005-03-11 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
131 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2005 IF: 2.498 |
|
|
Call Number |
UA @ lucian @ c:irua:51609 |
Serial |
1785 |
|
Permanent link to this record |
|
|
|
|
Author |
Liu, Y.; Brelet, Y.; He, Z.; Yu, L.; Forestier, B.; Deng, Y.; Jiang, H.; Houard, A. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Laser-induced periodic annular surface structures on fused silica surface |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
102 |
Issue |
25 |
Pages |
251103-251104 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
We report on the formation of laser-induced periodic annular surface structures on fused silica irradiated with multiple femtosecond laser pulses. This surface morphology emerges after the disappearance of the conventional laser induced periodic surface structures, under successive laser pulse irradiation. It is independent of the laser polarization and universally observed for different focusing geometries. We interpret its formation in terms of the interference between the reflected laser field on the surface of the damage crater and the incident laser pulse. (C) 2013 AIP Publishing LLC. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000321145200003 |
Publication Date |
2013-06-24 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
19 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
|
Call Number |
UA @ lucian @ c:irua:109832 |
Serial |
1786 |
|
Permanent link to this record |
|
|
|
|
Author |
Bleiner, D.; Bogaerts, A.; Belloni, F.; Nassisi, V. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Laser-induced plasmas from the ablation of metallic targets: the problem of the onset temperature, and insights on the expansion dynamics |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
101 |
Issue |
8 |
Pages |
083301,1-5 |
|
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
Laser-induced plasmas are transient systems rapidly aging in few nanoseconds of evolution. Time-of-flight spectrometry allowed studying initial plasma characteristics based on frozen translational degrees of freedom, hence overcoming intrinsic limitations of optical spectroscopy. Experimental ion velocity distributions were reconstructed as developed during the longitudinal plasma expansion. The obtained onset plasma temperatures are in the range of similar to 18-45 eV depending on the ablated metals. Also the ion angular spreads were found to be a function of ablated metal, e.g., the narrowest for Fe, the broadest for Al, due to different collisional coupling in the plasma population. (c) 2007 American Institute of Physics. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication ![sorted by Place of Publication field, ascending order (up)](img/sort_asc.gif) |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000246072200047 |
Publication Date |
2007-04-18 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
31 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2007 IF: 2.171 |
|
|
Call Number |
UA @ lucian @ c:irua:64635 |
Serial |
1788 |
|
Permanent link to this record |