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Author |
Pelloquin, D.; Hadermann, J.; Giot, M.; Caignaert, V.; Michel, C.; Hervieu, M.; Raveau, B. |
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Title |
Novel, oxygen-deficient n=3 RP-member Sr3NdFe3O9-\delta and its topotactic derivatives |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Chemistry of materials |
Abbreviated Journal |
Chem Mater |
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Volume |
16 |
Issue |
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Pages |
1715-1724 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Thesis |
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Publisher |
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Place of Publication  |
Washington, D.C. |
Editor |
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Language |
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Wos |
000221345000019 |
Publication Date |
2004-04-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0897-4756;1520-5002; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
9.466 |
Times cited |
24 |
Open Access |
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Notes |
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Approved |
Most recent IF: 9.466; 2004 IF: 4.103 |
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Call Number |
UA @ lucian @ c:irua:47318 |
Serial |
2381 |
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Author |
Rossell, M.D.; Abakumov, A.M.; Van Tendeloo, G.; Pardo, J.A.; Santiso, J. |
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Title |
Structure and microstructure of epitaxial Sr4Fe6O13-\delta films on SrTiO3 |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Chemistry and materials |
Abbreviated Journal |
Chem Mater |
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Volume |
16 |
Issue |
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Pages |
2578-2584 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The crystal structure and the microstructure of epitaxial Sr4Fe6O13+/-delta thin films grown on a single-crystal SrTiO3 substrate by PLD have been investigated. A combination of electron diffraction and high-resolution microscopy allows us to refine the structure and to identify an incommensurate modulation in the Sr4Fe6O13+/-delta films. The incommensurate structure (q = alphaa(m)* approximate to 0.39alpha(m)*, superspace group Xmmm(alpha00)0s0) can be interpreted as an oxygen-deficient modification in the Fe2O2.5 double layers. Moreover, it is shown that the experimentally determined a component of the modulation can be used consistently to estimate the local oxygen content in the Sr4Fe6O13+/-delta films. The compound composition can therefore be described as Sr4Fe6O12+2alpha and the value alpha = 0.39 corresponds to a Sr4Fe6O12.78 composition. The misfit stress along the Sr4Fe6O13+/-delta/SrTiO3 interface is accommodated via both elastic deformation and inelastic mechanisms (misfit dislocations and 90degrees rotation twins). The present results also suggest the existence of SrFeO3 perovskite in the Sr4Fe6O13+/-delta films. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
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Language |
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Wos |
000222252300011 |
Publication Date |
2004-06-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0897-4756;1520-5002; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
9.466 |
Times cited |
26 |
Open Access |
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Notes |
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Approved |
Most recent IF: 9.466; 2004 IF: 4.103 |
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Call Number |
UA @ lucian @ c:irua:54770 |
Serial |
3286 |
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Author |
Kirschhock, C.E.A.; Liang, D.; Aerts, A.; Aerts, C.A.; Kremer, S.P.B.; Jacobs, P.A.; Van Tendeloo, G.; Martens, J.A. |
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Title |
On the TEM and AFM evidence of zeosil nanoslabs present during the synthesis of silicalite-1 : reply |
Type |
L1 Letter to the editor |
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Year |
2004 |
Publication |
Angewandte Chemie: international edition in English |
Abbreviated Journal |
Angew Chem Int Edit |
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Volume |
43 |
Issue |
35 |
Pages |
4562-4564 |
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Keywords |
L1 Letter to the editor; Electron microscopy for materials research (EMAT) |
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Abstract |
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Publisher |
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Place of Publication |
Weinheim |
Editor |
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Language |
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Wos |
000224008400003 |
Publication Date |
2004-08-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1433-7851;1521-3773; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
11.994 |
Times cited |
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Open Access |
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Notes |
Fwo; Iap-Pai |
Approved |
Most recent IF: 11.994; 2004 IF: 9.161 |
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Call Number |
UA @ lucian @ c:irua:103253 |
Serial |
2457 |
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Author |
Filinov, A.V.; Peeters, F.M.; Riva, C.; Lozovik, Y.E.; Bonitz, M. |
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Title |
Exciton molecules in quantum wells : influence of the well width fluctuations |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Few-body systems
T2 – 3rd International Workshop on Dynamics and Structure of Critically, Stable Quantum Few-Body Systems, SEP 01-05, 2003, Trento, ITALY |
Abbreviated Journal |
Few-Body Syst |
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Volume |
34 |
Issue |
1-3 |
Pages |
149-154 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The influence of the well width fluctuations on the dependence of the binding energy of excitonic complexes in quantum wells is studied by using the path-integral Monte-Carlo technique. The results are compared with available experimental data and a good agreement is found. |
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Thesis |
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Publisher |
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Place of Publication |
Wien |
Editor |
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Language |
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Wos |
000222009500025 |
Publication Date |
2004-05-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0177-7963;1432-5411; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.877 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: 0.877; 2004 IF: 1.948 |
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Call Number |
UA @ lucian @ c:irua:103232 |
Serial |
1113 |
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Author |
Lubyshev, D.; Fastenau, J.M.; Fang, X.-M.; Wu, Y.; Doss, C.; Snyder, A.; Liu, W.K.; Lamb, M.S.M.; Bals, S.; Song, C. |
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Title |
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena |
Abbreviated Journal |
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Volume |
22 |
Issue |
3 |
Pages |
1565-1569 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering. |
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Corporate Author |
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Publisher |
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Place of Publication |
Woodbury, N.Y. |
Editor |
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Language |
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Wos |
000222481400141 |
Publication Date |
2004-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0734-211X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
25 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:87596 |
Serial |
427 |
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Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
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Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
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Year |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
798 |
Issue |
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Pages |
Y10.22,1-6 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0272-9172 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
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