“Paramagnetic adsorbates on graphene: a charge transfer analysis”. Leenaerts O, Partoens B, Peeters FM, Applied physics letters 92, 243125 (2008). http://doi.org/10.1063/1.2949753
Abstract: We introduce a modified version of the Hirshfeld charge analysis method and demonstrate its accurateness by calculating the charge transfer between the paramagnetic molecule NO2 and graphene. The charge transfer between paramagnetic molecules and a graphene layer as calculated with ab initio methods can crucially depend on the size of the supercell used in the calculation. This has important consequences for adsorption studies involving paramagnetic molecules such as NO2 physisorbed on graphene or on carbon nanotubes. © 2008 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 79
DOI: 10.1063/1.2949753
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“Partially unzipped carbon nanotubes as magnetic field sensors”. Costamagna S, Schulz A, Covaci L, Peeters F, Applied physics letters 100, 232104 (2012). http://doi.org/10.1063/1.4726039
Abstract: The conductance through graphene nanoribbons (GNR) connected to a partially unzipped carbon nanotube (CNT) is studied in the presence of an external magnetic field applied parallel to the long axis of the tube by means of non-equilibrium Green's function technique. We consider CNTs that are partially unzipped to form armchair-GNR/zigzag-CNT/armchair-GNR or zigzag-GNR/armchair-CNT/zigzag-GNR junctions. We find that the inclusion of a longitudinal magnetic field affects the electronic states only in the CNT region, leading to the suppression of the conductance at low energies. We demonstrate that both types of junctions can be used as magnetic field sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726039]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.4726039
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“Phonon-assisted Zener tunneling in a cylindrical nanowire transistor”. Carrillo-Nuñez H, Magnus W, Vandenberghe WG, Sorée B, Peeters FM, Journal of applied physics 113, 184507 (2013). http://doi.org/10.1063/1.4803715
Abstract: The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 4
DOI: 10.1063/1.4803715
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“Phonons in Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 95, 122110 (2009). http://doi.org/10.1063/1.3236526
Abstract: The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of the longitudinal acoustic modes. The stability of the nanowires, undoped or doped with B or P atoms, is investigated using the obtained phonon spectra. All considered wires were stable, except for highly doped, very thin nanowires.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.3236526
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“Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers”. Zhang Y, Fischetti MV, Sorée B, Magnus W, Heyns M, Meuris M, Journal of applied physics 106, 083704 (2009). http://doi.org/10.1063/1.3245327
Abstract: We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 29
DOI: 10.1063/1.3245327
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“Pinning-induced formation of vortex clusters and giant vortices in mesoscopic superconducting disks”. Grigorieva IV, Escoffier W, Misko VR, Baelus BJ, Peeters F, Vinnikov LY, Dubonos SV, Physical review letters 99, 147003 (2007). http://doi.org/10.1103/PhysRevLett.99.147003
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 75
DOI: 10.1103/PhysRevLett.99.147003
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“Properties of B and P doped Ge nanowires”. Peelaers H, Partoens B, Peeters FM, Applied physics letters 90, 263103 (2007). http://doi.org/10.1063/1.2752107
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 35
DOI: 10.1063/1.2752107
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“Pseudo magnetic field in strained graphene : revisited”. Masir MR, Moldovan D, Peeters FM, Solid state communications 175, 76 (2013). http://doi.org/10.1016/j.ssc.2013.04.001
Abstract: We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight- binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. The contributions of the different terms to the pseudo field expression are investigated for a model triaxial strain profile and are compared with the full solution. Our work suggests that the previous proposed pseudo magnetic field expression is valid up to reasonably high strain (15%) and there is no K-dependent pseudo-magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.554
Times cited: 57
DOI: 10.1016/j.ssc.2013.04.001
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“Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells”. Chang K, Xia JB, Wu HB, Feng SL, Peeters FM, Applied physics letters 80, 1788 (2002). http://doi.org/10.1063/1.1459491
Abstract: The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 8
DOI: 10.1063/1.1459491
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“Quantum mechanical solver for confined heterostructure tunnel field-effect transistors”. Verreck D, Van de Put M, Sorée B, Verhulst AS, Magnus W, Vandenberghe WG, Collaert N, Thean A, Groeseneken G, Journal of applied physics 115, 053706 (2014). http://doi.org/10.1063/1.4864128
Abstract: Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.4864128
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“Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 14
DOI: 10.1063/1.1767619
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“Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 93, 1230 (2003). http://doi.org/10.1063/1.1533108
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.1533108
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“Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Solid state communications 147, 31 (2008). http://doi.org/10.1016/j.ssc.2008.04.025
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 8
DOI: 10.1016/j.ssc.2008.04.025
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“Quasiparticle energies and uniaxial pressure effects on the properties of SnO2”. Saniz R, Dixit H, Lamoen D, Partoens B, Applied physics letters 97, 261901 (2010). http://doi.org/10.1063/1.3532109
Abstract: We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 23
DOI: 10.1063/1.3532109
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“Radial fluctuations induced stabilization of the ordered state in two-dimensional classical clusters”. Schweigert IV, Schweigert VA, Peeters FM, Physical review letters 84, 4381 (2000). http://doi.org/10.1103/PhysRevLett.84.4381
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 69
DOI: 10.1103/PhysRevLett.84.4381
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“Real-space calculation of the conductivity tensor for disordered topological matter”. Garcia JH, Covaci L, Rappoport TG, Physical review letters 114, 116602 (2015). http://doi.org/10.1103/PhysRevLett.114.116602
Abstract: We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivity tensor for the quantum Hall effect in disordered graphene and analyze the effect of the disorder in a Chern insulator in Haldane's model on a honeycomb lattice.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 69
DOI: 10.1103/PhysRevLett.114.116602
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“Realization of artificial ice systems for magnetic vortices in a superconducting MoGe thin film with patterned nanostructures”. Latimer ML, Berdiyorov GR, Xiao ZL, Peeters FM, Kwok WK, Physical review letters 111, 067001 (2013). http://doi.org/10.1103/PhysRevLett.111.067001
Abstract: We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 63
DOI: 10.1103/PhysRevLett.111.067001
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“Realization of free-standing silicene using bilayer graphene”. Neek-Amal M, Sadeghi A, Berdiyorov GR, Peeters FM, Applied physics letters 103, 261904 (2013). http://doi.org/10.1063/1.4852636
Abstract: The available synthesized silicene-like structures have been only realized on metallic substrates which are very different from the standalone buckled silicene, e. g., the Dirac cone of silicene is destroyed due to lattice distortion and the interaction with the substrate. Using graphene bilayer as a scaffold, a route is proposed to synthesize silicene with electronic properties decoupled from the substrate. The buckled hexagonal arrangement of silicene between the graphene layers is found to be very similar to the theoretically predicted standalone buckled silicene which is only very weakly van der Waals coupled to the graphene layers with a graphite-like interlayer distance of 3.42 angstrom and without any lattice distortion. We found that these stacked layers are stable well above room temperature. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 74
DOI: 10.1063/1.4852636
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“Rectification by an imprinted phase in a Josephson junction”. Berdiyorov GR, Milošević, MV, Covaci L, Peeters FM, Physical review letters 107, 177008 (2011). http://doi.org/10.1103/PhysRevLett.107.177008
Abstract: A Josephson phase shift can be induced in a Josephson junction by a strategically nearby pinned Abrikosov vortex (AV). For an asymmetric distribution of an imprinted phase along the junction (controlled by the position of the AV) such a simple system is capable of rectification of ac current in a broad and tunable frequency range. The resulting rectified voltage is a consequence of the directed motion of a Josephson antivortex which forms a pair with the AV when at local equilibrium. The proposed realization of the ratchet potential by an imprinted phase is more efficient than the asymmetric geometry of the junction itself, is easily realizable experimentally, and provides rectification even in the absence of an applied magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 28
DOI: 10.1103/PhysRevLett.107.177008
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“Reply to Rinn and Maass”. Schweigert IV, Schweigert VA, Peeters FM, Physical review letters 86, 4712 (2001). http://doi.org/10.1103/PhysRevLett.86.4712
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 5
DOI: 10.1103/PhysRevLett.86.4712
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“Resistance maps for a submicron Hall electrosensor in the diffusive regime”. Papp G, Peeters FM, Journal of applied physics 101, 113717 (2007). http://doi.org/10.1063/1.2745345
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.2745345
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“Resistance maps from local probing of a ballistic mesoscopic Hall bar”. Papp G, Peeters FM, Journal of applied physics 101, 063715 (2007). http://doi.org/10.1063/1.2713365
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 5
DOI: 10.1063/1.2713365
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“Resistivity scaling and electron relaxation times in metallic nanowires”. Moors K, Sorée B, Tokei Z, Magnus W, Journal of applied physics 116, 063714 (2014). http://doi.org/10.1063/1.4892984
Abstract: We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 17
DOI: 10.1063/1.4892984
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“Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures”. Wang YJ, Nickel HA, McCombe BD, Peeters FM, Shi JM, Hai GQ, Wu XG, Eustis TJ, Schaff W, Physical review letters 79, 3226 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 36
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“Response function of a Hall magnetosensor in the diffusive regime”. Cornelissens YG, Peeters FM, Journal of applied physics 92, 2006 (2002). http://doi.org/10.1063/1.1487909
Abstract: Two-dimensional electron gas systems patterned into micrometer Hall bars can be used as Hall magnetosensors. In this way, ballistic Hall probes have already been studied and used successfully. Here, the response function of a Hall sensor is determined in the diffusive regime, which allows this device to be used as a magnetosensor for the determination of inhomogeneous magnetic field distributions. Furthermore, the influence of the geometry of the Hall bar on this response function, such as circular corners and asymmetry in the probes, is also investigated and appears to be non-negligible. (C) 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 24
DOI: 10.1063/1.1487909
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“A scanning Hall probe microscope for high resolution magnetic imaging down to 300 mK”. Khotkevych VV, Milošević, MV, Bending SJ, The review of scientific instruments 79, 123708 (2008). http://doi.org/10.1063/1.3046285
Abstract: We present the design, construction, and performance of a low-temperature scanning Hall probe microscope with submicron lateral resolution and a large scanning range. The detachable microscope head is mounted on the cold flange of a commercial 3He-refrigerator (Oxford Instruments, Heliox VT-50) and operates between room temperature and 300 mK. It is fitted with a three-axis slip-stick nanopositioner that enables precise in situ adjustment of the probe location within a 6×6×7 mm3 space. The local magnetic induction at the sample surface is mapped with an easily changeable microfabricated Hall probe [typically GsAs/AlGaAs or AlGaAs/InGaAs/GaAs Hall sensors with integrated scanning tunnel microscopy (STM) tunneling tips] and can achieve minimum detectable fields 10 mG/Hz1/2. The Hall probe is brought into very close proximity to the sample surface by sensing and controlling tunnel currents at the integrated STM tip. The instrument is capable of simultaneous tunneling and Hall signal acquisition in surface-tracking mode. We illustrate the potential of the system with images of superconducting vortices at the surface of a Nb thin film down to 372 mK, and also of labyrinth magnetic-domain patterns of an yttrium iron garnet film captured at room temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.515
Times cited: 14
DOI: 10.1063/1.3046285
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“Self-propelled Janus particles in a ratchet : numerical simulations”. Ghosh PK, Misko VR, Marchesoni F, Nori F, Physical review letters 110, 1 (2013). http://doi.org/10.1103/PhysRevLett.110.268301
Abstract: Brownian transport of self-propelled overdamped microswimmers (like Janus particles) in a two-dimensional periodically compartmentalized channel is numerically investigated for different compartment geometries, boundary collisional dynamics, and particle rotational diffusion. The resulting time-correlated active Brownian motion is subject to rectification in the presence of spatial asymmetry. We prove that ratcheting of Janus particles can be orders of magnitude stronger than for ordinary thermal potential ratchets and thus experimentally accessible. In particular, autonomous pumping of a large mixture of passive particles can be induced by just adding a small fraction of Janus particles.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 143
DOI: 10.1103/PhysRevLett.110.268301
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“A simplified approach to the band gap correction of defect formation energies : Al, Ga, and In-doped ZnO”. Saniz R, Xu Y, Matsubara M, Amini MN, Dixit H, Lamoen D, Partoens B, The journal of physics and chemistry of solids 74, 45 (2013). http://doi.org/10.1016/j.jpcs.2012.07.017
Abstract: The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the HeydScuseriaErnzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.059
Times cited: 36
DOI: 10.1016/j.jpcs.2012.07.017
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“A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus”. Carrillo-Nuñez H, Magnus W, Peeters FM, Journal of applied physics 108, 063708 (2010). http://doi.org/10.1063/1.3476297
Abstract: A simplified quantum mechanical model is developed to investigate quantum transport features such as the electron concentration and the current flowing through a silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET). In particular, the electron concentration is extracted from a self-consistent solution of the Schrödinger and Poisson equations as well as the ballistic Boltzmann equation which have been solved by exploiting a nonlinear variational principle within the framework of the generalized local density approximation. A suitable action functional has been minimized and details of the implementation and its numerical minimization are given. The current density and its related current-voltage characteristics are calculated from the one-dimensional ballistic steady-state Boltzmann transport equation which is solved analytically by using the method of characteristic curves. The straightforward implementation, the computational speed and the good qualitative behavior of the transport characteristics observed in our approach make it a promising simulation method for modeling quantum transport in nanowire MOSFETs.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.3476297
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“Snake states and Klein tunneling in a graphene Hall bar with a pn-junction”. Barbier M, Papp G, Peeters FM, Applied physics letters 100, 163121 (2012). http://doi.org/10.1063/1.4704667
Abstract: The Hall (R-H) and bend (R-B) resistances of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction-dividing the Hall bar geometry in two regions-leads to two distinct regimes exhibiting very different physics: (1) both regions are of n-type and (2) one region is n-type and the other p-type. In regime (1), a “Hall plateau”-an enhancement of the resistance-appears for R-H. On the other hand, in regime (2), we found a negative R-H, which approaches zero for large B. The bend resistance is highly asymmetric in regime (2) and the resistance increases with increasing magnetic field B in one direction while it reduces to zero in the other direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704667]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4704667
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