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Records |
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Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
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Title |
On the interpretation of HREM images of partially ordered alloys |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
Volume |
60 |
Issue |
2 |
Pages |
265-282 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
|
Abstract |
The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1995TZ14700008 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.436 |
Times cited |
20 |
Open Access |
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Notes |
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Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:13014 |
Serial |
2438 |
Permanent link to this record |
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Author |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
Abbreviated Journal |
Appl Surf Sci |
|
Volume |
102 |
Issue |
|
Pages |
173-177 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1996VJ86100039 |
Publication Date |
2003-05-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0169-4332; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.711 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:104392 |
Serial |
2611 |
Permanent link to this record |
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Author |
Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
Volume |
54 |
Issue |
|
Pages |
237-249 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1994PA59800016 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.436 |
Times cited |
59 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:10006 |
Serial |
2844 |
Permanent link to this record |
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Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
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Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
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Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0169-4332; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
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Notes |
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Approved |
|
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Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
Permanent link to this record |
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Author |
Zhang, X.F.; Zhang, X.B.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Werner, H. |
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Title |
A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60 |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
Volume |
55 |
Issue |
|
Pages |
25-30 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1994PE30800005 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.436 |
Times cited |
2 |
Open Access |
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Notes |
|
Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
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Call Number |
UA @ lucian @ c:irua:10007 |
Serial |
3002 |
Permanent link to this record |
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Author |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
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Title |
Structural characterisation of erbium silicide thin films of an Si(111) substrate |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Journal of alloys and compounds |
Abbreviated Journal |
J Alloy Compd |
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Volume |
234 |
Issue |
2 |
Pages |
244-250 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1996TX65100020 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0925-8388; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.999 |
Times cited |
14 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:15451 |
Serial |
3213 |
Permanent link to this record |
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Author |
Verheijen, M.A.; Meekes, H.; Meijer, G.; Bennema, P.; de Boer, J.L.; van Smaalen, S.; Van Tendeloo, G.; Amelinckx, S.; Muto, S.; van Landuyt, J. |
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Title |
The structure of different phases of pure C70 crystals |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Chemical physics |
Abbreviated Journal |
Chem Phys |
|
Volume |
166 |
Issue |
|
Pages |
287-297 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1992JQ46300026 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0301-0104; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.652 |
Times cited |
168 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
|
Call Number |
UA @ lucian @ c:irua:4104 |
Serial |
3309 |
Permanent link to this record |
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Author |
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
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Title |
The study of carbon nanotubes produced by catalytic method |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Chemical physics letters |
Abbreviated Journal |
Chem Phys Lett |
|
Volume |
223 |
Issue |
|
Pages |
329-335 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1994NT08000011 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0009-2614 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.897 |
Times cited |
405 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:10002 |
Serial |
3326 |
Permanent link to this record |
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Author |
Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C. |
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Title |
SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
|
Volume |
210 |
Issue |
3-4 |
Pages |
439-446 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1993LG46100018 |
Publication Date |
2002-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0921-4534; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
0.942 |
Times cited |
18 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:102977 |
Serial |
3557 |
Permanent link to this record |
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Author |
van Landuyt, J. |
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Title |
The evolution of HVEM application in antwerp |
Type |
A1 Journal article |
|
Year |
1991 |
Publication |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
Abbreviated Journal |
Ultramicroscopy |
|
Volume |
39 |
Issue |
1-4 |
Pages |
287-298 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
A1991GY23100034 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
Impact Factor |
2.436 |
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:95973 |
Serial |
3579 |
Permanent link to this record |
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Author |
Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. |
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Title |
The influence of the h-BN morphology and structure on the c-BN growth |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Diamond and related materials
T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL |
Abbreviated Journal |
Diam Relat Mater |
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Volume |
10 |
Issue |
3-7 |
Pages |
1352-1356 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
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Language |
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Wos |
000168730600206 |
Publication Date |
2002-10-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.561 |
Times cited |
17 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.561; 2001 IF: 1.902 |
|
Call Number |
UA @ lucian @ c:irua:103421 |
Serial |
3586 |
Permanent link to this record |
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Author |
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
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Title |
The study of carbon nanotubules produced by catalytic method |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Chemical physics letters |
Abbreviated Journal |
Chem Phys Lett |
|
Volume |
223 |
Issue |
4 |
Pages |
329-335 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Catalytic methods for the production of carbon nanotubules have been developed based on the decomposition of acetylene on well-dispersed metal particles strongly adsorbed on a support. Cobalt on silica was found to be the best catalyst-support combination for the production of graphitic tubules. The method for the catalyst preparation and the reaction conditions were optimized. Straight and coiled carbon tubules were obtained with inner and outer diameter of 3-7 and 15-20 nm, respectively, and up to 30 mum in length. These nanotubules were not coated by amorphous carbon. Traces of amorphous carbon could be removed by hydrogen. High resolution electron microscopy images and electron diffraction patterns of the straight nanotubules were similar to those obtained by the arc-discharge method. Coiled nanotubules were revealed by TEM to be regular polygonized helices where the bends are caused by pairs of pentagon-heptagon carbon rings among the hexagonal network. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
Amsterdam |
Editor |
|
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Language |
|
Wos |
A1994NT08000011 |
Publication Date |
2002-07-25 |
|
Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0009-2614; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.897 |
Times cited |
405 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:99869 |
Serial |
3595 |
Permanent link to this record |
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Author |
Schryvers, D.; Van Landuyt, J. |
|
Title |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
Type |
A3 Journal Article |
|
Year |
1992 |
Publication |
ICOMAT |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ; |
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Abstract |
Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested |
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Wos |
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0000-00-00 |
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Edition |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
EMAT @ emat @ |
Serial |
5054 |
Permanent link to this record |
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Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
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Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
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Volume |
|
Issue |
169 |
Pages |
481-484 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
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Volume |
|
Issue |
164 |
Pages |
495-498 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Wos |
000166835300106 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
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Notes |
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Approved |
Most recent IF: NA |
|
Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
Permanent link to this record |
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Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
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Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
|
Volume |
127/128 |
Issue |
|
Pages |
347-349 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
|
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
Permanent link to this record |
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Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Direct observation of clusters in some FCC alloys by HREM |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
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Volume |
13 |
Issue |
|
Pages |
447-448 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
A1994BE09X00207 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
|
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10052 |
Serial |
716 |
Permanent link to this record |
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Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
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Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
|
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Volume |
|
Issue |
169 |
Pages |
415-418 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
Permanent link to this record |
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Author |
Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
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Title |
Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
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Volume |
13 |
Issue |
|
Pages |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Language |
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Wos |
A1994BC23W00081 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:10058 |
Serial |
918 |
Permanent link to this record |
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Author |
Schryvers, D.; van Landuyt, J.T. |
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Title |
Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite |
Type |
P1 Proceeding |
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Year |
1993 |
Publication |
Proceedings Of The International Conference On Martensitic Transformations (icomat-92) |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
263-268 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Language |
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Wos |
A1993BD05K00039 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
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ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
|
Times cited |
1 |
Open Access |
|
|
Notes |
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Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:104492 |
Serial |
975 |
Permanent link to this record |
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Author |
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
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Title |
EM study of sensitisation of silver halide grains |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
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Volume |
13 |
Issue |
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Pages |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Language |
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Wos |
A1994BE09Y00185 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
|
Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:10607 |
Serial |
1030 |
Permanent link to this record |
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Author |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. |
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Title |
Formation of diamond nanocrystals in laser-irradiated amorphous carbon films |
Type |
P3 Proceeding |
|
Year |
1994 |
Publication |
International Conference on the New Diamond Science and Technology |
Abbreviated Journal |
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Volume |
4 |
Issue |
|
Pages |
25-29 |
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Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:10059 |
Serial |
1259 |
Permanent link to this record |
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Author |
Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N. |
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Title |
High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Diamonds an related materials |
Abbreviated Journal |
Diam Relat Mater |
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Volume |
8 |
Issue |
|
Pages |
738-742 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
000080437000123 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.561 |
Times cited |
7 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.561; 1999 IF: 1.924 |
|
Call Number |
UA @ lucian @ c:irua:27519 |
Serial |
1445 |
Permanent link to this record |
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Author |
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Tanner, L.E. |
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Title |
HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys |
Type |
A3 Journal article |
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Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
|
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Volume |
13 |
Issue |
|
Pages |
659-662 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:10051 |
Serial |
1501 |
Permanent link to this record |
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|
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Author |
Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
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Title |
HREM study of Rb6C60 and helical carbon nanotubules |
Type |
A3 Journal article |
|
Year |
1994 |
Publication |
Icem |
Abbreviated Journal |
|
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Volume |
13 |
Issue |
|
Pages |
305-306 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 # |
|
Call Number |
UA @ lucian @ c:irua:10056 |
Serial |
1514 |
Permanent link to this record |
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|
|
|
Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
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Title |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
Volume |
61 |
Issue |
15 |
Pages |
10336-10345 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
|
Wos |
000086606200082 |
Publication Date |
2002-07-27 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0163-1829;1095-3795; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.836 |
Times cited |
27 |
Open Access |
|
|
Notes |
Conference Name: Microsc. Semicond. Mater. Conf. |
Approved |
Most recent IF: 3.836; 2000 IF: NA |
|
Call Number |
UA @ lucian @ c:irua:103456 |
Serial |
1577 |
Permanent link to this record |
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|
|
|
Author |
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
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Title |
Laser thermotreatment of the SnO2layers |
Type |
P1 Proceeding |
|
Year |
1998 |
Publication |
Eurosensors XII, vols 1 and 2 |
Abbreviated Journal |
|
|
Volume |
|
Issue |
|
Pages |
481-484 |
|
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
Abstract |
The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
|
Wos |
000077311200117 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0536-3 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:104343 |
Serial |
1798 |
Permanent link to this record |
|
|
|
|
Author |
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
|
Title |
Ordering and defects in BanTaxTiyO3n ternary oxides |
Type |
P1 Proceeding |
|
Year |
1994 |
Publication |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
Abbreviated Journal |
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Volume |
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Issue |
|
Pages |
869-870 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
A1994BE09Y00422 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
2-86883-226-1 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:104477 |
Serial |
2504 |
Permanent link to this record |
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|
|
|
Author |
Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. |
|
Title |
Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Journal of physical chemistry |
Abbreviated Journal |
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|
Volume |
96 |
Issue |
|
Pages |
7424-7430 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
A1992JM58600054 |
Publication Date |
2005-03-15 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0022-3654;1541-5740; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
33 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:4101 |
Serial |
2594 |
Permanent link to this record |
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|
|
|
Author |
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
|
Title |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A3 Journal article |
|
Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
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|
Volume |
11 |
Issue |
|
Pages |
1194-1204 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication ![sorted by Place of Publication field, descending order (down)](img/sort_desc.gif) |
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Editor |
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Language |
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Wos |
A1995TQ95100016 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
|
Times cited |
7 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:13297 |
Serial |
2655 |
Permanent link to this record |