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“Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
Abstract: Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.469
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“Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
Abstract: The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.935
Times cited: 1
DOI: 10.1002/crat.2170280804
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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“Electron-microscopy investigation of superconducting la2cu(o, f)4+y oxyfluoride”. Weill, Chevalier, Chambon, Tressaud, Darriet, Etourneau, Van Tendeloo G, European journal of solid state and inorganic chemistry 30, 1095 (1993)
Abstract: The fluorination of La2CuO4 can lead to different oxyfluoride compounds depending on the TF2 temperature of the fluorine gas treatment. When 150-degrees-C T(F2) less-than-or-equal-to 200-degrees-c less-than-or-equal-to 200-degrees-C a superconducting material is obtained. Previous neutron diffraction experiments as well as the EXAFS measurements at the La L(III) edge indicate that extra anions lie in an interstitial site between the two (LaO) layers. Electron diffraction patterns clearly show the existence of an incommensurate modulation due to the presence of shear planes. A second phase is also pointed out which can be obtained as a major component when the fluorination temperature is raised to 230-degrees-C. This phase which is not a superconductor crystallizes with the monoclinic symmetry.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Electron microscopy investigation of superconducting La2Cu(O,F)4+y oxyfluoride”. Weill F, Chevalier B, Chambon M, Tressaud A, Darriet B, Etourneau J, Van Tendeloo G, European journal of solid state and inorganic chemistry 30, 1095 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Electron microscopy investigation of ternary \gamma-brass-type precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999). http://doi.org/10.1080/01418619908210361
Abstract: Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Laboratory Experimental Medicine and Pediatrics (LEMP)
Times cited: 3
DOI: 10.1080/01418619908210361
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“Electron microscopy of a family of hexagonal perovskites: one-dimensional structures related to Sr4Ni3O9”. Huvé, M, Renard C, Abraham F, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 135, 1 (1998). http://doi.org/10.1006/jssc.1997.7522
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 30
DOI: 10.1006/jssc.1997.7522
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“Electron microscopy of carbon nanotubes and related structures”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, The journal of physics and chemistry of solids 58, 1807 (1997). http://doi.org/10.1016/S0022-3697(98)80003-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.059
Times cited: 12
DOI: 10.1016/S0022-3697(98)80003-6
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“Electron microscopy of recent high Tc superconductors”. Amelinckx S, Van Tendeloo G, Physica: C : superconductivity 235/240, 162 (1994). http://doi.org/10.1016/0921-4534(94)91338-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 6
DOI: 10.1016/0921-4534(94)91338-2
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“Electron microscopy studies of martensite microstructures”. Schryvers D, Journal de physique: 4 C5, 109 (1997). http://doi.org/10.1051/jp4:1997517
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:1997517
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“Electron microscopy study of coiled carbon tubules”. Bernaerts D, Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ivanov V, Nagy JB, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 71, 605 (1995). http://doi.org/10.1080/01418619508244470
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 72
DOI: 10.1080/01418619508244470
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“Electron microscopy study of defects in synthetic diamond layers”. Luyten W, Van Tendeloo G, Amelinckx S, Collins JL, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 66, 899 (1992). http://doi.org/10.1080/01418619208247998
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 36
DOI: 10.1080/01418619208247998
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“Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy: 1: precipitation and growth”. Schryvers D, Ma Y, Toth L, Tanner LE, Acta metallurgica et materialia 43, 4045 (1995). http://doi.org/10.1016/0956-7151(95)00101-Z
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 27
DOI: 10.1016/0956-7151(95)00101-Z
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“Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy: 2: plate crystallography”. Schryvers D, Ma Y, Toth L, Tanner LE, Acta metallurgica et materialia 43, 4057 (1995). http://doi.org/10.1016/0956-7151(95)00102-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 11
DOI: 10.1016/0956-7151(95)00102-2
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“Electron-mobility in 2 coupled delta-layers”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995). http://doi.org/10.1103/PhysRevB.52.11273
Abstract: The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 25
DOI: 10.1103/PhysRevB.52.11273
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“Electron mobility in Si δ-doped GaAs with spatial correlations in the distribution of charged impurities”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Farias GA, Devreese JT, Wolter JH, Wilamowski Z, Physical review : B : condensed matter and materials physics 55, 13093 (1997)
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.836
Times cited: 17
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“Electron mobility in Si delta doped GaAs”. Koenraad PM, van de Stadt AFW, Hai GQ, Shi JM, Vansant P, Peeters FM, Devreese JT, Perenboom JAAJ, Wolter JH, Physica: B : condensed matter 211, 462 (1995). http://doi.org/10.1016/0921-4526(94)01094-H
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 9
DOI: 10.1016/0921-4526(94)01094-H
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“Electron mobility in two coupled &delta, layers”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 24
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“Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 102
DOI: 10.1103/PhysRevB.48.4666
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“Electron scattering on circular symmetric magnetic profiles in a two-dimensional electron gas”. Reijniers J, Peeters FM, Matulis A, Physical review : B : condensed matter and materials physics 64, 245314 (2001). http://doi.org/10.1103/PhysRevB.64.245314
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 3.836
Times cited: 29
DOI: 10.1103/PhysRevB.64.245314
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“Electron spin and charge switching in a coupled quantum-dot.quantum ring system”. Szafran B, Peeters FM, Bednarek S, Physical review : B : condensed matter and materials physics 70, 12310 (2004). http://doi.org/10.1103/PhysRevB.70.125310
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 29
DOI: 10.1103/PhysRevB.70.125310
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“Electron-vortex interaction in a quantum dot”. Tavernier MB, Anisimovas E, Peeters FM, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics
T2 –, 16th International Conference on High Magnetic Fields in Semiconductor, Physics, AUG 02-06, 2004, Florida State Univ, NHMFL, Tallahassee, FL 18, 3633 (2004). http://doi.org/10.1142/S0217979204027177
Abstract: Small numbers N < 5 of two-dimensional Coulomb-interacting electrons trapped in a parabolic potential placed in a perpendicular magnetic field are investigated. The reduced wave function of this system, which is obtained by fixing the positions of N-1 electrons, exhibits strong correlations between the electrons and the zeros. These zeros axe often called vortices. An exact-diagonalization scheme is used to obtain the wave functions and the results are compared with results obtained from the recently proposed rotating electron molecule (REM) theory. We find that the vortices gather around the fixed electrons and repel each other, which is to a much lesser extend so for the REM results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.736
DOI: 10.1142/S0217979204027177
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“Electron-vortex separation in quantum dots”. Anisimovas E, Tavernier MB, Peeters FM, Physical review : B : condensed matter and materials physics 77, 045327 (2008). http://doi.org/10.1103/PhysRevB.77.045327
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.77.045327
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“Electron wave-function spillover in self-assembled InAs/InP quantum wires”. Maes J, Hayne M, Sidor Y, Partoens B, Peeters FM, González Y, González L, Fuster D, Garcia JM, Moshchalkov VV, Physical review : B : condensed matter and materials physics 70, 155311 (2004). http://doi.org/10.1103/PhysRevB.70.155311
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 43
DOI: 10.1103/PhysRevB.70.155311
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“Electronic properties of hydrogenated silicene and germanene”. Houssa M, Scalise E, Sankaran K, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 98, 223107 (2011). http://doi.org/10.1063/1.3595682
Abstract: The electronic properties of hydrogenated silicene and germanene, so called silicane and germanane, respectively, are investigated using first-principles calculations based on density functional theory. Two different atomic configurations are found to be stable and energetically degenerate. Upon the adsorption of hydrogen, an energy gap opens in silicene and germanene. Their energy gaps are next computed using the HSE hybrid functional as well as the G(0)W(0) many-body perturbation method. These materials are found to be wide band-gap semiconductors, the type of gap in silicane (direct or indirect) depending on its atomic configuration. Germanane is predicted to be a direct-gap material, independent of its atomic configuration, with an average energy gap of about 3.2 eV, this material thus being potentially interesting for optoelectronic applications in the blue/violet spectral range. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595682]
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 63
DOI: 10.1063/1.3595682
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“Electronic properties of two-dimensional hexagonal germanium”. Houssa M, Pourtois G, Afanas'ev VV, Stesmans A, Applied physics letters 96, 082111 (2010). http://doi.org/10.1063/1.3332588
Abstract: The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a poor metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K pointslike graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7×10<sup>6</sup> m/s, quite comparable to the value in graphene.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.411
Times cited: 86
DOI: 10.1063/1.3332588
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“Electronic states above a helium film suspended on a ring-shaped substrate”. Ramos ACA, Chaves A, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 77, 045415 (2008). http://doi.org/10.1103/PhysRevB.77.045415
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 4
DOI: 10.1103/PhysRevB.77.045415
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“Electronic structure and electric quadrupoles of a polymerized chain in solid AC60”. Nikolaev AV, Michel KH, Solid state communications 117, 739 (2001). http://doi.org/10.1016/S0038-1098(01)00017-5
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.554
Times cited: 10
DOI: 10.1016/S0038-1098(01)00017-5
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“Electronic structure of a Si \delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Physical Review B 54, 7996 (1996). http://doi.org/10.1103/PhysRevB.54.7996
Abstract: We present a theoretical study of the electronic structure of a heavily Si delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier. In this class of structures the effect of DX centers on the electronic properties can be tuned by changing the AlxGa1-xAs barrier width and/or the Al concentration, which leads to a lowering of the DX level with respect to the Fermi energy without disturbing the wave functions much. A self-consistent approach is developed in which the effective confinement potential and the Fermi energy of the system, the energies, the wave functions, and the electron densities of the discrete subbands have been obtained as a function of both the material parameters of the samples and the experimental conditions. The effect of DX centers on such structures at nonzero temperature and under an external pressure is investigated for three different models: (1) the DX(nc)(0) model with no correlation effects, (2) the d(+)/DX(0) model, and (3) the d(+)/DX(-) model with inclusion of correlation effects. In the actual calculation, influences of the background accepters, the discontinuity of the effective mass of the electrons at the interfaces of the different materials, band nonparabolicity, and the exchange-correlation energy of the electrons have been taken into account. We have found that (1) introducing a quantum barrier into delta-doped GaAs makes it possible to control the energy gaps between different electronic; subbands; (2) the electron wave functions are mon spread out when the repellent effect of the barriers is increased as compared to those in delta-doped GaAs; (3) increasing the quantum-barrier height and/or the application of hydrostatic pressure are helpful to experimentally observe the effect of the DX centers through a decrease of the total free-electron density; and (4) the correlation effects of the charged impurities are important for the systems under study.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 11
DOI: 10.1103/PhysRevB.54.7996
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“Electronic structure of the valence band in cylindrical strained InP/InGaP quantum dots in an external magnetic field”. Tadic, Peeters FM, Physica. E: Low-dimensional systems and nanostructures
T2 –, 14th International Conference on the Electronic Properties of, Two-Dimensional Systems, July 30-August 03, 2001, Prague, Czech Republic 12, 880 (2002). http://doi.org/10.1016/S1386-9477(01)00445-3
Abstract: The multiband effective-mass model of cylindrical self-assembled quantum dots in a magnetic field normal to the layer of the quantum dots is presented. The strain distribution is computed by the valence force field method. The strain-dependent multiband Hamiltonian is modified into an axially symmetric form, which commutes with the total angular momentum F-2 = fh. where f denotes the total magnetic quantum number. The heavy hole and the light hole parts in the mixed hole state are resolved. It is found that the heavy hole component dominates in the ground states for both f = 1/2 and 3/2. The electronic structure exhibits numerous anticrossings between the hole levels. The Zeeman splitting between the +\f\ and -\f\ states is also computed. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(01)00445-3
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