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Records |
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Author |
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
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Volume |
151 |
Issue |
9 |
Pages |
G598-G605 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society. |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000223622000072 |
Publication Date |
2004-08-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0013-4651; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
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Notes |
Fwo; Iuap P5/01 |
Approved |
Most recent IF: 3.259; 2004 IF: 2.356 |
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Call Number |
UA @ lucian @ c:irua:103760 |
Serial |
330 |
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Permanent link to this record |
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Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
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Volume |
45 |
Issue |
2-3 |
Pages |
277-282 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Wos |
000081748600023 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0167-9317; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.806 |
Times cited |
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Open Access |
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Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
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Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
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Permanent link to this record |
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Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
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Title |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
61 |
Issue |
15 |
Pages |
10336-10345 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops. |
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Wos |
000086606200082 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
27 |
Open Access |
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Notes |
Conference Name: Microsc. Semicond. Mater. Conf. |
Approved |
Most recent IF: 3.836; 2000 IF: NA |
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Call Number |
UA @ lucian @ c:irua:103456 |
Serial |
1577 |
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Permanent link to this record |
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Author |
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
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Title |
Reliability of copper dual damascene influenced by pre-clean |
Type |
P1 Proceeding |
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Year |
2002 |
Publication |
Analysis Of Integrated Circuits |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
118-123 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Ieee |
Place of Publication |
New york |
Editor |
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Language |
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Wos |
000177689400022 |
Publication Date |
2003-06-25 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
5 |
Open Access |
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Notes |
Conference name: |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:104170 |
Serial |
2865 |
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Permanent link to this record |
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Author |
Schryvers, D.; Van Landuyt, J. |
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Title |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
Type |
A3 Journal Article |
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Year |
1992 |
Publication |
ICOMAT |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ; |
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Abstract |
Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested |
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Wos |
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Publication Date |
0000-00-00 |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
EMAT @ emat @ |
Serial |
5054 |
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Permanent link to this record |
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Author |
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
126 |
Issue |
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Pages |
457-465 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KH92500029 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.698 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:7499 |
Serial |
9 |
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Permanent link to this record |
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Author |
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
126 |
Issue |
2-3 |
Pages |
457-465 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KH92500029 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.698 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:103012 |
Serial |
23 |
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Permanent link to this record |
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Author |
Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
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Title |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
Abbreviated Journal |
J Phys Chem B |
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Volume |
107 |
Issue |
16 |
Pages |
3690-3696 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
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Abstract |
An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism. |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
000182350200005 |
Publication Date |
2003-04-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1520-6106;1520-5207; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.177 |
Times cited |
9 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.177; 2003 IF: 3.679 |
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Call Number |
UA @ lucian @ c:irua:103300 |
Serial |
24 |
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Permanent link to this record |
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Author |
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
Abbreviated Journal |
Physica B |
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Volume |
340 |
Issue |
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Pages |
1013-1017 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved. |
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Corporate Author |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000188300200213 |
Publication Date |
2003-11-24 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.386 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.386; 2003 IF: 0.908 |
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Call Number |
UA @ lucian @ c:irua:103784 |
Serial |
25 |
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Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
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Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
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Corporate Author |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000082289200026 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0034-6748; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
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Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
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Permanent link to this record |
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Author |
Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. |
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Title |
Carbon nano-tubes: their formation process and observation by electron microscopy |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
130 |
Issue |
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Pages |
368-382 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993LK45300003 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.698 |
Times cited |
190 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:6786 |
Serial |
281 |
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Permanent link to this record |
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Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
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Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
481-484 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Wos |
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Publication Date |
0000-00-00 |
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Abbreviated Series Title |
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|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
|
Permanent link to this record |
|
|
|
|
Author |
Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. |
|
|
Title |
Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy |
Type |
A3 Journal article |
|
Year |
1992 |
Publication |
Dentistry in Japan |
Abbreviated Journal |
|
|
|
Volume |
29 |
Issue |
|
Pages |
91-102 |
|
|
Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
|
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0070-3737 |
ISBN |
|
Additional Links |
UA library record |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
|
|
Call Number |
UA @ lucian @ c:irua:4105 |
Serial |
313 |
|
Permanent link to this record |
|
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R. |
|
|
Title |
Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging |
Type |
P3 Proceeding |
|
Year |
1991 |
Publication |
|
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
St. Paul, Minn. |
Editor |
|
|
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
|
|
|
Call Number |
UA @ lucian @ c:irua:710 |
Serial |
320 |
|
Permanent link to this record |
|
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
|
|
Title |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
Type |
A1 Journal article |
|
Year |
1991 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
|
|
Volume |
110 |
Issue |
|
Pages |
930-941 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1991FL02100033 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.698 |
Times cited |
40 |
Open Access |
|
|
|
Notes |
|
Approved |
|
|
|
Call Number |
UA @ lucian @ c:irua:48349 |
Serial |
321 |
|
Permanent link to this record |
|
|
|
|
Author |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
|
|
Title |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
|
|
Volume |
173 |
Issue |
|
Pages |
285-296 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1997XC98100008 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.751 |
Times cited |
4 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.751; 1997 IF: 1.259 |
|
|
Call Number |
UA @ lucian @ c:irua:20459 |
Serial |
324 |
|
Permanent link to this record |
|
|
|
|
Author |
van Landuyt, J.; Van Tendeloo, G. |
|
|
Title |
Charcaterization by high-resolution transmission electron microscopy |
Type |
H3 Book chapter |
|
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
187-190 |
|
|
Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Stt |
Place of Publication |
Den Haag |
Editor |
|
|
|
Language |
|
Wos |
A1990DC39700012 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29685 |
Serial |
335 |
|
Permanent link to this record |
|
|
|
|
Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
|
|
Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
|
|
Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
|
|
Language |
|
Wos |
000167727200026 |
Publication Date |
2002-10-14 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
2.359 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
|
|
Call Number |
UA @ lucian @ c:irua:94967 |
Serial |
343 |
|
Permanent link to this record |
|
|
|
|
Author |
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
|
|
Title |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
Type |
P1 Proceeding |
|
Year |
2002 |
Publication |
|
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
183-194 |
|
|
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. |
|
|
Address |
|
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
S.l. |
Editor |
|
|
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1-56677-344-X |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:94950 |
Serial |
344 |
|
Permanent link to this record |
|
|
|
|
Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
|
|
Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
|
|
Volume |
308 |
Issue |
|
Pages |
294-297 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
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|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
000173660100073 |
Publication Date |
2002-10-15 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
|
|
Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
|
Permanent link to this record |
|
|
|
|
Author |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
|
|
Title |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
|
|
Volume |
74 |
Issue |
3 |
Pages |
723-740 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model. |
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|
Address |
|
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
London |
Editor |
|
|
|
Language |
|
Wos |
A1996VG17300010 |
Publication Date |
2007-07-08 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
|
Call Number |
UA @ lucian @ c:irua:15456 |
Serial |
359 |
|
Permanent link to this record |
|
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
|
|
Title |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
Inst Phys Conf Ser |
|
|
Volume |
|
Issue |
164 |
Pages |
495-498 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. |
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Address |
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Corporate Author |
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Thesis |
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|
Publisher |
|
Place of Publication |
|
Editor |
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|
|
Language |
|
Wos |
000166835300106 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0650-5; 0951-3248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:102918 |
Serial |
376 |
|
Permanent link to this record |
|
|
|
|
Author |
Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. |
|
|
Title |
Colloid size distributions in ion implanted glass |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Journal of non-crystalline solids |
Abbreviated Journal |
J Non-Cryst Solids |
|
|
Volume |
162 |
Issue |
|
Pages |
217-224 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1993LY37100002 |
Publication Date |
2003-06-21 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-3093; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.766 |
Times cited |
63 |
Open Access |
|
|
|
Notes |
|
Approved |
INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 # |
|
|
Call Number |
UA @ lucian @ c:irua:6787 |
Serial |
389 |
|
Permanent link to this record |
|
|
|
|
Author |
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
|
|
Title |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
|
|
Volume |
40 |
Issue |
|
Pages |
189-201 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Springfield, Va |
Editor |
|
|
|
Language |
|
Wos |
A1996VL09200003 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1062-3701 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.349 |
Times cited |
4 |
Open Access |
|
|
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 # |
|
|
Call Number |
UA @ lucian @ c:irua:15428 |
Serial |
418 |
|
Permanent link to this record |
|
|
|
|
Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
|
|
Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
|
|
Volume |
5 |
Issue |
s:[1] |
Pages |
art. no.-W11.38 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
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|
Address |
|
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|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
|
|
|
Language |
|
Wos |
000090103600097 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1092-5783 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
|
Permanent link to this record |
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|
|
|
Author |
Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
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|
Title |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
|
Volume |
69 |
Issue |
|
Pages |
219-240 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
|
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
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Language |
|
Wos |
A1997YG59500001 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0304-3991 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
2.843 |
Times cited |
11 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.843; 1997 IF: 1.600 |
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Call Number |
UA @ lucian @ c:irua:21416 |
Serial |
455 |
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Permanent link to this record |
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Author |
Amelinckx, S.; Luyten, W.; Krekels, T.; Van Tendeloo, G.; van Landuyt, J. |
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|
Title |
Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”? |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
|
|
Volume |
121 |
Issue |
|
Pages |
543-558 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
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Thesis |
|
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1992JK56000001 |
Publication Date |
2002-10-16 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-0248; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.698 |
Times cited |
43 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4103 |
Serial |
492 |
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Permanent link to this record |
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|
|
Author |
Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
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|
Title |
Conventional and HREM study of structural defects in nanostructured silver halides |
Type |
P3 Proceeding |
|
Year |
1998 |
Publication |
|
Abbreviated Journal |
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|
|
Volume |
|
Issue |
|
Pages |
1-6 |
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Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
|
|
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Address |
|
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Corporate Author |
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Thesis |
|
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Publisher |
|
Place of Publication |
Antwerpen |
Editor |
|
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
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|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29681 |
Serial |
509 |
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Permanent link to this record |
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|
|
|
Author |
Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
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|
Title |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
|
|
Volume |
17 |
Issue |
1 |
Pages |
249-255 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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|
Abstract |
|
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
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|
Language |
|
Wos |
000078136300038 |
Publication Date |
2002-07-27 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0734-2101; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.374 |
Times cited |
8 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.374; 1999 IF: 1.742 |
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|
Call Number |
UA @ lucian @ c:irua:29689 |
Serial |
581 |
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Permanent link to this record |
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|
|
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Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
|
|
Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
|
|
|
Volume |
150/151 |
Issue |
|
Pages |
53-64 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
|
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Language |
|
Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
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Permanent link to this record |