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Author Mary Joy, R.; Pobedinskas, P.; Bourgeois, E.; Chakraborty, T.; Görlitz, J.; Herrmann, D.; Noël, C.; Heupel, J.; Jannis, D.; Gauquelin, N.; D'Haen, J.; Verbeeck, J.; Popov, C.; Houssiau, L.; Becher, C.; Nesládek, M.; Haenen, K. url  doi
openurl 
  Title Germanium vacancy centre formation in CVD nanocrystalline diamond using a solid dopant source Type A1 Journal Article
  Year 2023 Publication Science talks Abbreviated Journal Science Talks  
  Volume 5 Issue Pages 100157  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos Publication Date 2023-02-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2772-5693 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access OpenAccess  
  Notes Approved Most recent IF: NA  
  Call Number EMAT @ emat @c:irua:196969 Serial 8791  
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Author Denisov, N.; Jannis, D.; Orekhov, A.; Müller-Caspary, K.; Verbeeck, J. pdf  url
doi  openurl
  Title Characterization of a Timepix detector for use in SEM acceleration voltage range Type A1 Journal Article
  Year 2023 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 253 Issue Pages 113777  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Hybrid pixel direct electron detectors are gaining popularity in electron microscopy due to their excellent properties. Some commercial cameras based on this technology are relatively affordable which makes them attractive tools for experimentation especially in combination with an SEM setup. To support this, a detector characterization (Modulation Transfer Function, Detective Quantum Efficiency) of an Advacam Minipix and Advacam Advapix detector in the 15–30 keV range was made. In the current work we present images of Point Spread Function, plots of MTF/DQE curves and values of DQE(0) for these detectors. At low beam currents, the silicon detector layer behaviour should be dominant, which could make these findings transferable to any other available detector based on either Medipix2, Timepix or Timepix3 provided the same detector layer is used.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 001026912700001 Publication Date 2023-06-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.2 Times cited Open Access OpenAccess  
  Notes The authors acknowledge the financial support of the Research Foundation Flanders (FWO, Belgium) project SBO S000121N. The authors are grateful to Dr. Lobato for productive discussion of methods. Approved Most recent IF: 2.2; 2023 IF: 2.843  
  Call Number EMAT @ emat @c:irua:198258 Serial 8815  
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Author Van den Broek, W.; Jannis, D.; Verbeeck, J. pdf  url
doi  openurl
  Title Convexity constraints on linear background models for electron energy-loss spectra Type A1 Journal Article
  Year 2023 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 254 Issue Pages 113830  
  Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;  
  Abstract In this paper convexity constraints are derived for a background model of electron energy loss spectra (EELS) that is linear in the fitting parameters. The model outperforms a power-law both on experimental and simulated backgrounds, especially for wide energy ranges, and thus improves elemental quantification results. Owing to the model’s linearity, the constraints can be imposed through fitting by quadratic programming. This has important advantages over conventional nonlinear power-law fitting such as high speed and a guaranteed unique solution without need for initial parameters. As such, the need for user input is significantly reduced, which is essential for unsupervised treatment of large datasets. This is demonstrated on a demanding spectrum image of a semiconductor device sample with a high number of elements over a wide energy range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos Publication Date 2023-08-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record  
  Impact Factor 2.2 Times cited Open Access Not_Open_Access  
  Notes ECSEL, 875999 ; Horizon 2020; Horizon 2020 Framework Programme; Electronic Components and Systems for European Leadership; Approved Most recent IF: 2.2; 2023 IF: 2.843  
  Call Number EMAT @ emat @c:irua:200588 Serial 8961  
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