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“Capacitive electrical asymmetry effect in an inductively coupled plasma reactor”. Zhang Q-Z, Bogaerts A, Plasma Sources Science &, Technology 27, 105019 (2018). http://doi.org/10.1088/1361-6595/aad796
Abstract: The electrical asymmetry effect is realized by applying multiple frequency power sources
(13.56 MHz and 27.12 MHz) to a capacitively biased substrate electrode in a specific inductively
coupled plasma reactor. On the one hand, by adjusting the phase angle θ between the multiple
frequency power sources, an almost linear self-bias develops on the substrate electrode, and
consequently the ion energy can be well modulated, while the ion flux stays constant within a
large range of θ. On the other hand, the plasma density and ion flux can be significantly
modulated by tuning the inductive power supply, while only inducing a small change in the self-
bias. Independent control of self-bias/ion energy and ion flux can thus be realized in this specific
inductively coupled plasma reactor.
Keywords: A1 Journal Article; electrical asymmetry effect, inductively coupled plasma, self-bias, independent control of the ion fluxes and ion energy; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Impact Factor: 3.302
Times cited: 1
DOI: 10.1088/1361-6595/aad796
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“Addition of yttrium into HfO2 films: microstructure and electrical properties”. Dubourdieu C, Rauwel E, Roussel H, Ducroquet F, Hollaender B, Rossell M, Van Tendeloo G, Lhostis S, Rushworth S, Journal of vacuum science and technology: A: vacuum surfaces and films 27, 503 (2009). http://doi.org/10.1116/1.3106627
Abstract: The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 29
DOI: 10.1116/1.3106627
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“Advanced three-dimensional electron microscopy techniques in the quest for better structural and functional materials”. Schryvers D, Cao S, Tirry W, Idrissi H, Van Aert S, Science and technology of advanced materials 14, 014206 (2013). http://doi.org/10.1088/1468-6996/14/1/014206
Abstract: After a short review of electron tomography techniques for materials science, this overview will cover some recent results on different shape memory and nanostructured metallic systems obtained by various three-dimensional (3D) electron imaging techniques. In binary NiTi, the 3D morphology and distribution of Ni4Ti3 precipitates are investigated by using FIB/SEM slice-and-view yielding 3D data stacks. Different quantification techniques will be presented including the principal ellipsoid for a given precipitate, shape classification following a Zingg scheme, particle distribution function, distance transform and water penetration. The latter is a novel approach to quantifying the expected matrix transformation in between the precipitates. The different samples investigated include a single crystal annealed with and without compression yielding layered and autocatalytic precipitation, respectively, and a polycrystal revealing different densities and sizes of the precipitates resulting in a multistage transformation process. Electron tomography was used to understand the interaction between focused ion beam-induced Frank loops and long dislocation structures in nanobeams of Al exhibiting special mechanical behaviour measured by on-chip deposition. Atomic resolution electron tomography is demonstrated on Ag nanoparticles in an Al matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.798
Times cited: 6
DOI: 10.1088/1468-6996/14/1/014206
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“Biaxially aligned titanium nitride thin films deposited by reactive unbalanced magnetron sputtering”. Mahieu S, Ghekiere P, de Winter G, de Gryse R, Depla D, Van Tendeloo G, Lebedev OI, Surface and coatings technology 200, 2764 (2006). http://doi.org/10.1016/j.surfcoat.2004.09.012
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.589
Times cited: 36
DOI: 10.1016/j.surfcoat.2004.09.012
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“CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions”. Robin I-C, Aichele T, Bougerol C, André, R, Tatarenko S, Bellet-Amalric E, van Daele B, Van Tendeloo G, Nanotechnology 18, 265701 (2007). http://doi.org/10.1088/0957-4484/18/26/265701
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 8
DOI: 10.1088/0957-4484/18/26/265701
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“Chabazite : stable cation-exchanger in hyper alkaline concrete pore water”. Van Tendeloo L, Wangermez W, Kurttepeli M, de Blochouse B, Bals S, Van Tendeloo G, Martens JA, Maes A, Kirschhock CEA, Breynaert E, Environmental science and technology 49, 2358 (2015). http://doi.org/10.1021/es505346j
Abstract: To avoid impact on the environment, facilities for permanent disposal of hazardous waste adopt multibarrier design schemes. As the primary barrier very often consists of cement-based materials, two distinct aspects are essential for the selection of suitable complementary barriers: (1) selective sorption of the contaminants in the repository and (2) long-term chemical stability in hyperalkaline concrete-derived media. A multidisciplinary approach combining experimental strategies from environmental chemistry and materials science is therefore essential to provide a reliable assessment of potential candidate materials. Chabazite is typically synthesized in 1 M KOH solutions but also crystallizes in simulated young cement pore water, a pH 13 aqueous solution mainly containing K+ and Na+ cations. Its formation and stability in this medium was evaluated as a function of temperature (60 and 85 °C) over a timeframe of more than 2 years and was also asessed from a mechanistic point of view. Chabazite demonstrates excellent cation-exchange properties in simulated young cement pore water. Comparison of its Cs+ cation exchange properties at pH 8 and pH 13 unexpectedly demonstrated an increase of the KD with increasing pH. The combined results identify chabazite as a valid candidate for inclusion in engineered barriers for concrete-based waste disposal.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.198
Times cited: 13
DOI: 10.1021/es505346j
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“Chemical solution deposition: a path towards low cost coated conductors”. Obradors X, Puig T, Pomar A, Sandiumenge F, Piñol S, Mestres N, Castaño O, Coll M, Cavallaro A, Palau A, Gázquez J, González JC, Gutiérrez J, Romá, N, Ricart S, Moretó, JM, Rossell MD, Van Tendeloo G, Superconductor science and technology 17, 1055 (2004). http://doi.org/10.1088/0953-2048/17/8/020
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 107
DOI: 10.1088/0953-2048/17/8/020
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“A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, The journal of imaging science and technology 40, 189 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.349
Times cited: 4
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“Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications”. Lubyshev D, Fastenau JM, Fang X-M, Wu Y, Doss C, Snyder A, Liu WK, Lamb MSM, Bals S, Song C, Journal of vacuum science &, technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena 22, 1565 (2004). http://doi.org/10.1116/1.1691412
Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 25
DOI: 10.1116/1.1691412
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“Controllable synthesis of novel one-dimensional carbon nanomaterials on an alkali-element-modified Cu catalyst”. Tao XY, Zhang XB, Cheng J-P, Liu F, Li Y, Van Tendeloo G, Nanotechnology 17, 224 (2006). http://doi.org/10.1088/0957-4484/17/1/037
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 4
DOI: 10.1088/0957-4484/17/1/037
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“Critical assessment of the process of growth of a YBa2Cu3O7-\delta layer on Y2BaCuO5”. Jacques P, Verbist K, Lapin J, Ryelandt L, Van Tendeloo G, Delannay F, Superconductor science and technology 9, 176 (1996). http://doi.org/10.1088/0953-2048/9/3/008
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 1
DOI: 10.1088/0953-2048/9/3/008
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“Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition”. Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, van Landuyt J, Grivas C, Hatziapostolou A, Journal of vacuum science and technology: A: vacuum surfaces and films 17, 249 (1999). http://doi.org/10.1116/1.581579
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.374
Times cited: 8
DOI: 10.1116/1.581579
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“Crystallographic aspects related to advanced tribological multilayers of Cr/CrN and Ti/TiN types produced by pulsed laser deposition (PLD)”. Major L, Morgiel J, Major B, Lackner JM, Waldhauser W, Ebner R, Nistor L, Van Tendeloo G, Surface and coatings technology 200, 6190 (2006). http://doi.org/10.1016/j.surfcoat.2005.11.021
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.589
Times cited: 32
DOI: 10.1016/j.surfcoat.2005.11.021
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“Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals”. Ray S, Kolen'ko YV, Kovnir KA, Lebedev OI, Turner S, Chakraborty T, Erni R, Watanabe T, Van Tendeloo G, Yoshimura M, Itoh M, Nanotechnology 23, 025702 (2012). http://doi.org/10.1088/0957-4484/23/2/025702
Abstract: Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}\mathrm {(O)}
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 19
DOI: 10.1088/0957-4484/23/2/025702
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“Defects in high-dose oxygen implanted silicon : a TEM study”. Deveirman A, van Landuyt J, Vanhellemont J, Maes HE, Yallup K, Vacuum: the international journal and abstracting service for vacuum science and technology
T2 –, 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42, 367 (1991). http://doi.org/10.1016/0042-207X(91)90055-N
Abstract: Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.858
Times cited: 4
DOI: 10.1016/0042-207X(91)90055-N
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“Effect of deposition rate on the microstructure of electron beam evaporated nanocrystalline palladium thin films”. Amin-Ahmadi B, Idrissi H, Galceran M, Colla MS, Raskin JP, Pardoen T, Godet S, Schryvers D, Thin solid films : an international journal on the science and technology of thin and thick films 539, 145 (2013). http://doi.org/10.1016/j.tsf.2013.05.083
Abstract: The influence of the deposition rate on the formation of growth twins in nanocrystalline Pd films deposited by electron beam evaporation is investigated using transmission electron microscopy. Statistical measurements prove that twin boundary (TB) density and volume fraction of grains containing twins increase with increasing deposition rate. A clear increase of the dislocation density was observed for the highest deposition rate of 5 Å/s, caused by the increase of the internal stress building up during deposition. Based on crystallographic orientation indexation using transmission electron microscopy, it can be concluded that a {111} crystallographic texture increases with increasing deposition rate even though the {101} crystallographic texture remains dominant. Most of the TBs are fully coherent without any residual dislocations. However, for the highest deposition rate (5 Å/s), the coherency of the TBs decreases significantly as a result of the interaction of lattice dislocations emitted during deposition with the growth TBs. The analysis of the grain boundary character of different Pd films shows that an increasing fraction of high angle grain boundaries with misorientation angles around 5565° leads to a higher potential for twin formation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 13
DOI: 10.1016/j.tsf.2013.05.083
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“Effect of selenium content of CuInSex alloy nanopowder precursors on recrystallization of printed CuInSe2 absorber layers during selenization heat treatment”. E Zaghi A, Buffière M, Koo J, Brammertz G, Batuk M, Verbist C, Hadermann J, Kim WK, Meuris M, Poortmans J, Vleugels J;, Thin solid films : an international journal on the science and technology of thin and thick films , 1 (2014). http://doi.org/10.1016/j.tsf.2014.10.003
Abstract: Polycrystalline CuInSe2 semiconductors are efficient light absorber materials for thin film solar cell technology, whereas printing is one of the promising low cost and non-vacuum approaches for the fabrication of thin film solar cells. The printed precursors are transformed into a dense polycrystalline CuInSe2 semiconductor film via thermal treatment in ambient selenium atmosphere (selenization). In this study, the effect of the selenium content in high purity mechanically synthesized CuInSex (x = 2, 1.5, 1 or 0.5) alloy precursors on the recrystallization of the CuInSe2 phase during the selenization process was investigated. The nanostructure and phase variation of CuInSex nanopowders were investigated by different characterization techniques. The recrystallization process of the 12 μm thick CuInSex coatings into the CuInSe2 phase during selenization in selenium vapor was investigated via in-situ high temperature X-ray diffraction. The CuInSex precursors with lower selenium content showed a more pronounced phase conversion into CuInSe2 compared to the higher selenium content CuInSex precursors. Moreover, the CuInSex (x = 0.5 and 1) precursor resulted in a denser polycrystalline CuInSe2 semiconductor film with larger crystals. This could be attributed to a more intensive atomic interdiffusion within the CuInSex precursor system compared to a CuInSe2 phase precursor, and the formation of intermediate CuSe and CuSe2 fluxing phases during selenization.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 7
DOI: 10.1016/j.tsf.2014.10.003
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“Effect of the burn-out step on the microstructure of the solution-processed Cu(In,Ga)Se2 solar cells”. Batuk M, Buffiere M, Zaghi AE, Lenaers N, Verbist C, Khelifi S, Vleugels J, Meuris M, Hadermann J, Thin solid films : an international journal on the science and technology of thin and thick films 583, 142 (2015). http://doi.org/10.1016/j.tsf.2015.03.063
Abstract: For the development of the photovoltaic industry cheap methods for the synthesis of Cu(In,Ga)Se-2 (CIGSe) based solar cells are required. In this work, CIGSe thin films were obtained by a solution-based method using oxygen-bearing derivatives. With the aimof improving the morphology of the printed CIGSe layers, we investigated two different annealing conditions of the precursor layer, consisting of (1) a direct selenization step (reference process), and (2) a pre-treatment thermal step prior to the selenization. We showed that the use of an Air/H2S burn-out step prior to the selenization step increases the CIGSe grain size and reduces the carbon content. However, it leads to the reduction of the solar cell efficiency from 4.5% in the reference sample down to 0.5% in the annealed sample. Detailed transmission electron microscopy analysis, including high angle annular dark field scanning transmission electron microscopy and energy dispersive X-ray mapping, was applied to characterize the microstructure of the film and to determine the relationship between microstructure and the solar cell performance. We demonstrated that the relatively low efficiency of the reference solar cells is related not only to the nanosize of the CIGSe grains and presence of the pores in the CIGSe layer, but also to the high amount of secondary phases, namely, In/Ga oxide (or hydroxide) amorphous matter, residuals of organicmatter (carbon), and copper sulfide that is formed at the CIGSe/MoSe2 interface. The annealing in H2S during the burn-out step leads to the formation of the copper sulfide at all grain boundaries and surfaces in the CIGSe layer, which results in the noticeably efficiency drop. (C) 2015 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 5
DOI: 10.1016/j.tsf.2015.03.063
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“Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
Abstract: The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.935
Times cited: 1
DOI: 10.1002/crat.2170280804
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“Evolution of the phase stability of NiAl under low energy ball milling”. Zelaya E, Esquivel MR, Schryvers D, Advanced powder technology 24, 1063 (2013). http://doi.org/10.1016/j.apt.2013.03.008
Abstract: Low energy mechanical alloying of Ni35 at.%Al and Ni40 at.%Al material was performed and the resulting structures were investigated by XRD and TEM. The final intermetallics observed consist of two phases, NiAl(B2) and Ni3Al while 7R and 3R martensite was observed in post-annealed samples. Different integrated milling times were associated to the intermetallic consolidation and initial blend dissociation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.659
Times cited: 10
DOI: 10.1016/j.apt.2013.03.008
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“Growth of La2Mo2O9 films on porous Al2O3 substrates by radio frequency magnetron sputtering”. Laffez P, Chen XY, Banerjee G, Pezeril T, Rossell MD, Van Tendeloo G, Lacorre P, Liu JM, Liu Z-G, Thin solid films : an international journal on the science and technology of thin and thick films 500, 27 (2006). http://doi.org/10.1016/j.tsf.2005.10.062
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 15
DOI: 10.1016/j.tsf.2005.10.062
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“Identification of substitutional nitrogen and surface paramagnetic centers in nanodiamond of dynamic synthesis by electron paramagnetic resonance”. Orlinskii SB, Bogomolov RS, Kiyamova AM, Yavkin BV, Mamin GM, Turner S, Van Tendeloo G, Shiryaev AA, Vlasov II, Shenderova O, Nanoscience and nanotechnology letters 3, 63 (2011). http://doi.org/10.1166/nnl.2011.1121
Abstract: Production of nanodiamond particles containing substitutional nitrogen is important for a wide variety of advanced applications. In the current work nanodiamond particles synthesized from a mixture of graphite and hexogen were analyzed to determine the presence of substitutional nitrogen using pulsed electron paramagnetic resonance (EPR) spectroscopy. Nitrogen paramagnetic centers in the amount of 1.2 ppm have been identified. The spin relaxation characteristics for both nitrogen and surface defects are also reported. A new approach for efficient depletion of the strong non-nitrogen EPR signal in nanodiamond material by immersing nanodiamond particles into ice matrix is suggested. This approach allows an essential decrease of the spin relaxation time of the dominant non-nitrogen defects, while preserving the substitutional nitrogen spin relaxation time.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.889
Times cited: 14
DOI: 10.1166/nnl.2011.1121
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“Influence of the Ar/O2 ratio on the growth and biaxial alignment of yttria stabilized zirconia layers during reactive unbalanced magnetron sputtering”. Mahieu S, Ghekiere P, de Winter G, Depla D, de Gryse R, Lebedev OI, Van Tendeloo G, Thin solid films : an international journal on the science and technology of thin and thick films 484, 18 (2005). http://doi.org/10.1016/j.tsf.2005.01.021
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 23
DOI: 10.1016/j.tsf.2005.01.021
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“Influence of twinning on the morphology of AgBr and AgCl microcrystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Bollen D, de Keyzer R, van Roost C, The journal of imaging science and technology 45, 349 (2001)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.348
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“Interlayer structure in YBCO-coated conductors prepared by chemical solution deposition”. Molina L, Egoavil R, Turner S, Thersleff T, Verbeeck J, Holzapfel B, Eibl O, Van Tendeloo G, Superconductor science and technology 26, 075016 (2013). http://doi.org/10.1088/0953-2048/26/7/075016
Abstract: The functionality of YBa2Cu3O7−δ (YBCO)-coated conductor technology depends on the reliability and microstructural properties of a given tape or wire architecture. Particularly, the interface to the metal tape is of interest since it determines the adhesion, mechanical stability of the film and thermal contact of the film to the substrate. A trifluoroacetate (TFA)metal organic deposition (MOD) prepared YBCO film deposited on a chemical solution-derived buffer layer architecture based on CeO2/La2Zr2O7 and grown on a flexible Ni5 at.%W substrate with a {100}⟨001⟩ biaxial texture was investigated. The YBCO film had a thickness was 440 nm and a jc of 1.02 MA cm−2 was determined at 77 K and zero external field. We present a sub-nanoscale analysis of a fully processed solution-derived YBCO-coated conductor by aberration-corrected scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy (EELS). For the first time, structural and chemical analysis of the valence has been carried out on the sub-nm scale. Intermixing of Ni, La, Ce, O and Ba takes place at these interfaces and gives rise to nanometer-sized interlayers which are a by-product of the sequential annealing process. Two distinct interfacial regions were analyzed in detail: (i) the YBCO/CeO2/La2Zr2O7 region (10 nm interlayer) and (ii) the La2Zr2O7/Ni5 at.%W substrate interface region (20 nm NiO). This is of particular significance for the functionality of these YBCO-coated conductor architectures grown by chemical solution deposition.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 11
DOI: 10.1088/0953-2048/26/7/075016
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“Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Superconductor science and technology 9, 978 (1996). http://doi.org/10.1088/0953-2048/9/11/009
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 10
DOI: 10.1088/0953-2048/9/11/009
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“Epitaxial YBa2Cu3O7−xnanocomposite thin films from colloidal solutions”. Cayado P, De Keukeleere K, Garzón A, Perez-Mirabet L, Meledin A, De Roo J, Vallés F, Mundet B, Rijckaert H, Pollefeyt G, Coll M, Ricart S, Palau A, Gázquez J, Ros J, Van Tendeloo G, Van Driessche I, Puig T, Obradors X, Superconductor science and technology 28, 124007 (2015). http://doi.org/10.1088/0953-2048/28/12/124007
Abstract: A methodology of general validity to prepare epitaxial nanocomposite films based on the use of colloidal solutions containing different crystalline preformed oxide nanoparticles ( ex situ nanocomposites) is reported. The trifluoroacetate (TFA) metal–organic chemical solution deposition route is used with alcoholic solvents to grow epitaxial YBa 2 Cu 3 O 7 (YBCO) films. For this reason stabilizing oxide nanoparticles in polar solvents is a challenging goal. We have used scalable nanoparticle synthetic methodologies such as thermal and microwave-assisted solvothermal techniques to prepare CeO 2 and ZrO 2 nanoparticles. We show that stable and homogeneous colloidal solutions with these nanoparticles can be reached using benzyl alcohol, triethyleneglycol, nonanoic acid, trifluoroacetic acid or decanoic acid as protecting ligands, thereby allowing subsequent mixing with alcoholic TFA solutions. An elaborate YBCO film growth analysis of these nanocomposites allows the identification of the different relevant growth phenomena, e.g. nanoparticles pushing towards the film surface, nanoparticle reactivity, coarsening and nanoparticle accumulation at the substrate interface. Upon mitigation of these effects, YBCO nanocomposite films with high self-field critical currents ( J c ∼ 3–4 MA cm −2 at 77 K) were reached, indicating no current limitation effects associated with epitaxy perturbation, while smoothed magnetic field dependences of the critical currents at high magnetic fields and decreased effective anisotropic pinning behavior confirm the effectiveness of the novel developed approach to enhance vortex pinning. In conclusion, a novel low cost solution-derived route to high current nanocomposite superconducting films and coated conductors has been developed with very promising features.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 32
DOI: 10.1088/0953-2048/28/12/124007
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“Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells”. Zaghi AE, Buffière M, Brammertz G, Batuk M, Lenaers N, Kniknie B, Hadermann J, Meuris M, Poortmans J, Vleugels J, Advanced powder technology 25, 1254 (2014). http://doi.org/10.1016/j.apt.2014.03.003
Abstract: Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu-In-Se) alloy nanopowders with 20-200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu-In-Se alloy nanopowders were investigated. Thin Cu-In-Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe2 semiconductor film by selenization heat treatment in Se vapor. The CuInSe2 film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe2 absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm(2) area cell. (c) 2014 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.659
Times cited: 10
DOI: 10.1016/j.apt.2014.03.003
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“Metal-decorated multi-wall carbon nanotubes for low temperature gas sensing”. Espinosa EH, Lonescu R, Bittencourt C, Felten A, Erni R, Van Tendeloo G, Pireaux J-J, Llobet E, Thin solid films : an international journal on the science and technology of thin and thick films 515, 8322 (2007). http://doi.org/10.1016/j.tsf.2007.03.017
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.879
Times cited: 86
DOI: 10.1016/j.tsf.2007.03.017
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