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Author	Lumbeeck, G.; Idrissi, H.; Amin-Ahmadi, B.; Favache, A.; Delmelle, R.; Samaee, V.; Proost, J.; Pardoen, T.; Schryvers, D.
Title	Effect of hydriding induced defects on the small-scale plasticity mechanisms in nanocrystalline palladium thin films			Type	A1 Journal Article
Year	2018	Publication	Journal Of Applied Physics	Abbreviated Journal	J Appl Phys
Volume	124	Issue	22	Pages	225105
Keywords	A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract	Nanoindentation tests performed on nanocrystalline palladium films subjected to hydriding/dehydriding cycles demonstrate a significant softening when compared to the as-received material. The origin of this softening is unraveled by combining in situ TEM nanomechanical testing with automated crystal orientation mapping in TEM and high resolution TEM. The softening is attributed to the presence of a high density of stacking faults and of Shockley partial dislocations after hydrogen loading. The hydrogen induced defects affect the elementary plasticity mechanisms and the mechanical response by acting as preferential sites for twinning/detwinning during deformation. These results are analyzed and compared to previous experimental and simulation works in the literature. This study provides new insights into the effect of hydrogen on the atomistic deformation and cracking mechanisms as well as on the mechanical properties of nanocrystalline thin films and membranes.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000453254000025	Publication Date	2018-12-14
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	2	Open Access	Not_Open_Access
Notes	This work was supported by the Hercules Foundation under Grant No. AUHA13009, the Flemish Research Fund (FWO) under Grant No. G.0365.15N, and the Flemish Strategic Initiative for Materials (SIM) under the project InterPoCo. Dr. H. Idrissi is mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). We would like to thank Dr. Hadi Pirgazi from UGent for his technical support to process the ACOM data in the OIM Analysis software.			Approved	Most recent IF: 2.068
Call Number	EMAT @ emat @c:irua:155742			Serial	5135
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Author	Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F.
Title	Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions			Type	A1 Journal article
Year	2002	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	92	Issue	8	Pages	4336-4341
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000178318000024	Publication Date	2002-10-07
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	5	Open Access
Notes				Approved	Most recent IF: 2.068; 2002 IF: 2.281
Call Number	UA @ lucian @ c:irua:39872			Serial	2005
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Author	Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.
Title	Ab initio study of shallow acceptors in bixbyite V₂O₃			Type	A1 Journal article
Year	2015	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	117	Issue	117	Pages	015703
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract	We present the results of our study on p-type dopability of bixbyite V2O3 using the Heyd, Scuseria, and Ernzerhof hybrid functional (HSE06) within the density functional theory (DFT) formalism. We study vanadium and oxygen vacancies as intrinsic defects and substitutional Mg, Sc, and Y as extrinsic defects. We find that Mg substituting V acts as a shallow acceptor, and that oxygen vacancies are electrically neutral. Hence, we predict Mg-doped V2O3 to be a p-type conductor. Our results also show that vanadium vacancies are relatively shallow, with a binding energy of 0.14 eV, so that they might also lead to p-type conductivity.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000347958600067	Publication Date	2015-01-05
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;1089-7550;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	3	Open Access
Notes	FWO G015013; Hercules			Approved	Most recent IF: 2.068; 2015 IF: 2.183
Call Number	c:irua:122728			Serial	35
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Author	Bekaert, J.; Saniz, R.; Partoens, B.; Lamoen, D.
Title	First-principles study of carbon impurities in CuInSe₂ and CuGaSe₂, present in non-vacuum synthesis methods			Type	A1 Journal article
Year	2015	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	117	Issue	117	Pages	015104
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract	A first-principles study of the structural and electronic properties of carbon impurities in CuInSe2 and CuGaSe2 is presented. Carbon is present in organic molecules in the precursor solutions used in non-vacuum growth methods for CuInSe2 and CuGaSe2 based photovoltaic cells. These growth methods make more efficient use of material, time, and energy than traditional vacuum methods. The formation energies of several carbon impurities are calculated using the hybrid HSE06 functional. C Cu acts as a shallow donor, CIn and interstitial C yield deep donor levels in CuInSe2, while in CuGaSe2 CGa and interstitial C act as deep amphoteric defects. So, these defects reduce the majority carrier (hole) concentration in p-type CuInSe2 and CuGaSe2 by compensating the acceptor levels. The deep defects are likely to act as recombination centers for the photogenerated charge carriers and are thus detrimental for the performance of the photovoltaic cells. On the other hand, the formation energies of the carbon impurities are high, even under C-rich growth conditions. Thus, few C impurities will form in CuInSe2 and CuGaSe2 in thermodynamic equilibrium. However, the deposition of the precursor solution in non-vacuum growth methods presents conditions far from thermodynamic equilibrium. In this case, our calculations show that C impurities formed in non-equilibrium tend to segregate from CuInSe2 and CuGaSe2 by approaching thermodynamic equilibrium, e.g., via thorough annealing.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000347958600055	Publication Date	2015-01-07
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;1089-7550;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	6	Open Access
Notes	FWO G015013; Hercules			Approved	Most recent IF: 2.068; 2015 IF: 2.183
Call Number	c:irua:122064			Serial	1215
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Author	Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B.
Title	Hydrogen impurities and native defects in CdO			Type	A1 Journal article
Year	2011	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	110	Issue	6	Pages	063521,1-063521,7
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract	We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000295619300041	Publication Date	2011-09-23
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	13	Open Access
Notes	; The authors gratefully acknowledge financial support from the IWT-Vlaanderen through the ISIMADE project, the FWO-Vlaanderen through Project G.0191.08 and the BOF-NOI of the University of Antwerp. This work was carried out using the HPC infrastructure at the University of Antwerp (CalcUA), a division of the Flemish Supercomputer Center VSC. ;			Approved	Most recent IF: 2.068; 2011 IF: 2.168
Call Number	UA @ lucian @ c:irua:93613			Serial	1533
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Author	Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.
Title	First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides			Type	A1 Journal article
Year	2016	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	120	Issue	120	Pages	085707
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract	Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev. Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the currentvoltage curve, the SLME is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II¼ Cd and Hg, and Cu2-II-SnS4 with II ¼ Cd, Hg, and Zn have a higher theoretical efficiency compared with the materials currently used as absorber layer.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000383913400074	Publication Date	2016-08-30
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	29	Open Access
Notes	We acknowledge the financial support from the FWO-Vlaanderen through project G.0150.13N and a GOA fund from the University of Antwerp. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), bothfunded by the FWO-Vlaanderen and the Flemish Government–department EWI.			Approved	Most recent IF: 2.068
Call Number	c:irua:135089			Serial	4113
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Author	Chaves, A.; Moura, V.N.; Linard, F.J.A.; Covaci, L.; Milošević, M.V.
Title	Tunable magnetic focusing using Andreev scattering in superconductor-graphene hybrid devices			Type	A1 Journal article
Year	2020	Publication	Journal Of Applied Physics	Abbreviated Journal	J Appl Phys
Volume	128	Issue	12	Pages	124303
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract	We perform the wavepacket dynamics simulation of a graphene-based device where propagating electron trajectories are tamed by an applied magnetic field toward a normal/superconductor interface. The magnetic field controls the incidence angle of the incoming electronic wavepacket at the interface, which results in the tunable electron-hole ratio in the reflected wave function due to the angular dependence of the Andreev reflection. Here, mapped control of the quasiparticle trajectories by the external magnetic field not only defines an experimental probe for fundamental studies of the Andreev reflection in graphene but also lays the foundation for further development of magnetic focusing devices based on nanoengineered superconducting two-dimensional materials.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Wos	000576393200002	Publication Date	2020-09-28
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979; 1089-7550	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	3.2	Times cited	1	Open Access	Not_Open_Access
Notes	; This work was supported by the Brazilian Council for Research (CNPq) through the PRONEX/FUNCAP and PQ programs and by the Research Foundation-Flanders (FWO). ;			Approved	Most recent IF: 3.2; 2020 IF: 2.068
Call Number	UA @ admin @ c:irua:172730			Serial	6639
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Author	Li, D.Y.; Zeng, Y.J.; Pereira, L.M.C.; Batuk, D.; Hadermann, J.; Zhang, Y.Z.; Ye, Z.Z.; Temst, K.; Vantomme, A.; Van Bael, M.J.; Van Haesendonck, C.;
Title	Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films			Type	A1 Journal article
Year	2013	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	114	Issue	3	Pages	033909-6
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000322202700071	Publication Date	2013-07-17
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	10	Open Access
Notes				Approved	Most recent IF: 2.068; 2013 IF: 2.185
Call Number	UA @ lucian @ c:irua:110765			Serial	126
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Author	Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title	Bond length variation in Ga_1-xIn_xAs crystals from the Tersoff potential			Type	A1 Journal article
Year	2007	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	101	Issue	12	Pages	123508,1-4
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000247625700034	Publication Date	2007-06-20
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	19	Open Access
Notes				Approved	Most recent IF: 2.068; 2007 IF: 2.171
Call Number	UA @ lucian @ c:irua:67460			Serial	247
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Author	Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J.
Title	Circular dichroism in the electron microscope: progress and applications (invited)			Type	A1 Journal article
Year	2010	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	107	Issue	9	Pages	09d311,1-09d311,6
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	According to theory, x-ray magnetic circular dichroism in a synchrotron is equivalent to energy loss magnetic chiral dichroism (EMCD) in a transmission electron microscope (TEM). After a synopsis of the development of EMCD, the theoretical background is reviewed and recent results are presented, focusing on the study of magnetic nanoparticles for ferrofluids and Heusler alloys for spintronic devices. Simulated maps of the dichroic strength as a function of atom position in the crystal allow evaluating the influence of specimen thickness and sample tilt on the experimental EMCD signal. Finally, the possibility of direct observation of chiral electronic transitions with atomic resolution in a TEM is discussed.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000277834300276	Publication Date	2010-05-12
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	28	Open Access
Notes	Esteem			Approved	Most recent IF: 2.068; 2010 IF: 2.079
Call Number	UA @ lucian @ c:irua:83653UA @ admin @ c:irua:83653			Serial	361
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Author	Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A.
Title	Effect of high temperature deposition on CoSi₂ phase formation			Type	A1 Journal article
Year	2013	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	113	Issue	23	Pages	234902-234908
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000321011700077	Publication Date	2013-06-17
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	2	Open Access
Notes	Fwo; Countatoms			Approved	Most recent IF: 2.068; 2013 IF: 2.185
Call Number	UA @ lucian @ c:irua:109266			Serial	815
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Author	Hezareh, T.; Razavi, F.S.; Kremer, R.K.; Habermeier, H.-U.; Lebedev, O.I.; Kirilenko, D.; Van Tendeloo, G.
Title	Effect of PbZr_0.52Ti_0.48O₃ thin layer on structure, electronic and magnetic properties of La_0.65Sr_0.35MnO₃ and La_0.65Ca_0.30MnO₃ thin-films			Type	A1 Journal article
Year	2011	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	109	Issue	11	Pages	113707,1-113707,8
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Epitaxial thin film heterostructures of high dielectric PbZr<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (PZT) and La<sub>1-x</sub>A<sub>x</sub>MnO<sub>3</sub> (A-divalent alkaline earth metals such as Sr (LSMO) and Ca (LCMO)) were grown on SrTiO<sub>3</sub> substrates and their structure, temperature dependence of electrical resistivity, and magnetization were investigated as a function of the thickness of the LSMO(LCMO) layer. The microstructures of the samples were analyzed by TEM. By applying an electric field across the PZT layer, we applied a ferrodistortive pressure on the manganite layer and studied the correlations between lattice distortion and electric transport and magnetic properties of the CMR materials.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000292214700069	Publication Date	2011-06-06
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	4	Open Access
Notes				Approved	Most recent IF: 2.068; 2011 IF: 2.168
Call Number	UA @ lucian @ c:irua:90964			Serial	843
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Author	Malakho, A.; Fargin, E.; Lahaye, M.; Lazoryak, B.; Morozov, V.; Van Tendeloo, G.; Rodriguez, V.; Adamietz, F.
Title	Enhancement of second harmonic generation signal in thermally poled glass ceramic with NaNbO₃ nanocrystals			Type	A1 Journal article
Year	2006	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	100	Issue	6	Pages	063103,1-5
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Glass ceramic composites were prepared by bulk crystallization of NaNbO3 in sodium niobium borate glasses. A homogeneous bulk crystallization of the NaNbO3 phase takes place during heat treatments that produces visible-near infrared transparent materials with similar to 30 nm NaNbO3 nanocrystallites. Upon thermal poling, a strong Na+ depleted nonlinear optical thin layer is observed at the anode side that should induce a large internal static electric field. In addition, the chi((2)) response of the poled glass ceramic composites increases from 0.2 up to 1.9 pm/V with the rate of crystallization. Two mechanisms may be considered: a pure structural chi((2)) process connected with the occurrence of a spontaneous ferroelectric polarization or an increase of the chi((3)) response of the nanocrystallites that enhances the electric field induced second harmonic generation process. (c) 2006 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000240876600003	Publication Date	2006-10-03
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	13	Open Access
Notes				Approved	Most recent IF: 2.068; 2006 IF: 2.316
Call Number	UA @ lucian @ c:irua:61005			Serial	1063
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Author	Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C.
Title	High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs			Type	A1 Journal article
Year	1999	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	85	Issue	4	Pages	2119-2123
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000078403000017	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	6	Open Access
Notes				Approved	Most recent IF: 2.068; 1999 IF: 2.275
Call Number	UA @ lucian @ c:irua:103977			Serial	1455
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Author	Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines			Type	A1 Journal article
Year	2001	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	90	Issue	1	Pages	167-174
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000169361100023	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	97	Open Access
Notes				Approved	Most recent IF: 2.068; 2001 IF: 2.128
Call Number	UA @ lucian @ c:irua:102855			Serial	1587
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Author	Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G.
Title	Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La_0.7Ba_0.3MnO₃ films			Type	A1 Journal article
Year	2001	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	90	Issue	3	Pages	1429-1435
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000169868300052	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	2	Open Access
Notes				Approved	Most recent IF: 2.068; 2001 IF: 2.128
Call Number	UA @ lucian @ c:irua:54816			Serial	1649
Permanent link to this record



Author	Shapoval, O.; Huehn, S.; Verbeeck, J.; Jungbauer, M.; Belenchuk, A.; Moshnyaga, V.
Title	Interface-controlled magnetism and transport of ultrathin manganite films			Type	A1 Journal article
Year	2013	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	113	Issue	17	Pages	17c711-3
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000319292800195	Publication Date	2013-03-19
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	7	Open Access
Notes	Ifox; Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO;			Approved	Most recent IF: 2.068; 2013 IF: 2.185
Call Number	UA @ lucian @ c:irua:109009UA @ admin @ c:irua:109009			Serial	1692
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Author	Maignan, A.; Singh, K.; Simon, C.; Lebedev, O.I.; Martin, C.; Tan, H.; Verbeeck, J.; Van Tendeloo, G.
Title	Magnetic and magnetodielectric properties of erbium iron garnet ceramic			Type	A1 Journal article
Year	2013	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	113	Issue	3	Pages	033905-5
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	An Er3Fe5O12 ceramic has been sintered in oxygen atmosphere at 1400 °C for dielectric measurements. Its structural quality at room temperature has been checked by combining transmission electron microscopy and X-ray diffraction. It crystallizes in the cubic space group Ia3d with a = 12.3488(1). The dielectric permittivity ([variantgreekepsilon]′) and losses (tan δ) measurements as a function of temperature reveal the existence of two anomalies, a broad one between 110 K and 80 K, attributed to the Er3+ spin reorientation, and a second sharper feature at about 45 K associated to the appearance of irreversibility on the magnetic susceptibility curves. In contrast to the lack of magnetic field impact on [variantgreekepsilon]′ for the former anomaly, a complex magnetic field effect has been evidenced below 45 K. The isothermal [variantgreekepsilon]′(H) curves show the existence of positive magnetodielectric effect, reaching a maximum of 0.14% at 3 T and 10 K. Its magnitude decreases as H is further increased. Interestingly, for the lowest H values, a linear regime in the [variantgreekepsilon]′(H) curve is observed. From this experimental study, it is concluded that the [variantgreekepsilon]′ anomaly, starting above the compensation temperature Tc (75 K) and driven by the internal magnetic field, is not sensitive to an applied external magnetic field. Thus, below 45 K, it is the magnetic structure which is responsible for the coupling between spin and charge in this iron garnet.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000313670600042	Publication Date	2013-01-16
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	15	Open Access
Notes	Vortex; Countatoms ECASJO_;			Approved	Most recent IF: 2.068; 2013 IF: 2.185
Call Number	UA @ lucian @ c:irua:106182UA @ admin @ c:irua:106182			Serial	1861
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Author	Laffez, P.; Van Tendeloo, G.; Seshadri, R.; Hervieu, M.; Martin, C.; Maignan, A.; Raveau, B.
Title	Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites			Type	A1 Journal article
Year	1996	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	80	Issue		Pages	5850-5856
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	A1996VU98700045	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.183	Times cited	36	Open Access
Notes				Approved	no
Call Number	UA @ lucian @ c:irua:17848			Serial	2039
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Author	Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A.
Title	Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga_1-xIn_xAs/GaAs quantum wells			Type	A1 Journal article
Year	2009	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	105	Issue	8	Pages	084310,1-084310,8
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000268064700149	Publication Date	2009-04-23
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record
Impact Factor	2.068	Times cited		Open Access
Notes	Fwo G.0425.05; Esteem 026019			Approved	Most recent IF: 2.068; 2009 IF: 2.072
Call Number	UA @ lucian @ c:irua:78282			Serial	2160
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Author	Dobrynin, A.N.; Temst, K.; Lievens, P.; Margueritat, J.; Gonzalo, J.; Afonso, C.N.; Piscopiello, E.; Van Tendeloo, G.
Title	Observation of Co/CoO nanoparticles below the critical size for exchange bias			Type	A1 Journal article
Year	2007	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	101	Issue	11	Pages	113913-113917
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	We compare the magnetic properties of pure and oxidized Co nanoparticles embedded in an amorphous Al2O3 matrix. Nanoparticles with diameters of 2 or 3 nm were prepared by alternate pulsed laser deposition in high vacuum conditions, and some of them were exposed to O-2 after production and before being embedded. The nanoparticles are organized in layers, the effective edge-to-edge in-depth separation being 5 or 10 nm. The lower saturation magnetizations per Co atom for the samples containing oxidized nanoparticles provide evidence for the formation of antiferromagnetic CoO shells in the nanoparticles. None of the samples with Co/CoO nanoparticles show exchange bias, while vertical hysteresis loop shifts and enhanced coercivities (as compared to samples with pure Co nanoparticles) are observed. This constitutes evidence for the nanoparticles size being in all cases smaller than the critical size for exchange bias. The difference in coercivity versus temperature dependences for the samples with pure and oxidized Co nanoparticles shows that the exchange anisotropy in Co/CoO nanoparticles appears at temperatures lower than 50 K. (c) 2007 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000247306000098	Publication Date	2007-06-12
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	27	Open Access
Notes				Approved	Most recent IF: 2.068; 2007 IF: 2.171
Call Number	UA @ lucian @ c:irua:103596			Serial	2415
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Author	Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J.
Title	Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques			Type	A1 Journal article
Year	2002	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	91	Issue	4	Pages	2493-2498
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000173553800114	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	27	Open Access
Notes				Approved	Most recent IF: 2.068; 2002 IF: 2.281
Call Number	UA @ lucian @ c:irua:103372			Serial	2542
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Author	Wouters, J.; Lebedev, O.I.; Van Tendeloo, G.; Yamada, H.; Sato, N.; Vanacken, J.; Moshchalkov, V.V.; Verbiest, T.; Valev, V.K.
Title	Preparing polymer films doped with magnetic nanoparticles by spin-coating and melt-processing can induce an in-plane magnetic anisotropy			Type	A1 Journal article
Year	2011	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	109	Issue	7	Pages	076105-076105,3
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Faraday rotation has been used to investigate a series of polymer films doped with magnetic iron oxide nanoparticles. The films have been prepared by spin-coating and melt-processing. In each case, upon varying the angle of optical incidence on the films, an in-plane magnetic anisotropy is observed. The effect of such an anisotropy on the Faraday rotation as a function of the angle of optical incidence is verified by comparison with magnetically poled films. These results demonstrate that care should be taken upon analyzing the magnetic behavior of such films on account of the sample preparation techniques themselves being able to affect the magnetization.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000289949000166	Publication Date	2011-04-12
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	10	Open Access
Notes	Fwo; Iap; Iwt			Approved	Most recent IF: 2.068; 2011 IF: 2.168
Call Number	UA @ lucian @ c:irua:89917			Serial	2709
Permanent link to this record



Author	Salman, O.U.; Finel, A.; Delville, R.; Schryvers, D.
Title	The role of phase compatibility in martensite			Type	A1 Journal article
Year	2012	Publication	Journal of applied physics T2 – 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR	Abbreviated Journal	J Appl Phys
Volume	111	Issue	10	Pages	103517
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Shape memory alloys inherit their macroscopic properties from their mesoscale microstructure originated from the martensitic phase transformation. In a cubic to orthorhombic transition, a single variant of martensite can have a compatible (exact) interface with the austenite for some special lattice parameters in contrast to conventional austenite/twinned martensite interface with a transition layer. Experimentally, the phase compatibility results in a dramatic drop in thermal hysteresis and gives rise to very stable functional properties over cycling. Here, we investigate the microstructures observed in Ti50Ni50-xPdx alloys that undergo a cubic to orthorhombic martensitic transformation using a three-dimensional phase field approach. We will show that the simulation results are in very good agreement with transmission electron microscopy observations. However, the understanding of the drop in thermal hysteresis requires the coupling of phase transformation with plastic activity. We will discuss this point within the framework of thermoelasticity, which is a generic feature of the martensitic transformation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712629]
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000305363700053	Publication Date	2012-05-21
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	11	Open Access
Notes				Approved	Most recent IF: 2.068; 2012 IF: 2.210
Call Number	UA @ lucian @ c:irua:100310			Serial	2919
Permanent link to this record



Author	Resta, V.; Siegel, J.; Bonse, J.; Gonzalo, J.; Afonso, C.N.; Piscopiello, E.; Van Tenedeloo, G.;
Title	Sharpening the shape distribution of gold nanoparticles by laser irradiation			Type	A1 Journal article
Year	2006	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	100	Issue	8	Pages	Doi: 10.1063/1.2358822
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000241721900079	Publication Date	2006-10-20
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	36	Open Access
Notes				Approved	Most recent IF: 2.068; 2006 IF: 2.316
Call Number	UA @ lucian @ c:irua:61368			Serial	2993
Permanent link to this record



Author	Shestakov, M.V.; Meledina, M.; Turner, S.; Tikhomirov, V.K.; Verellen, N.; Rodríguez, V.D.; Velázquez, J.J.; Van Tendeloo, G.; Moshchalkov, V.V.
Title	The size and structure of Ag particles responsible for surface plasmon effects and luminescence in Ag homogeneously doped bulk glass			Type	A1 Journal article
Year	2013	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	114	Issue	7	Pages	073102-73105
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	As-prepared and heat-treated oxyfluoride glasses, co-doped with Ag nanoclusters/nanoparticles, are prepared at 0.15 at. % Ag concentration. The as-prepared glass shows an absorption band in the UV/violet attributed to the presence of amorphous Ag nanoclusters with an average size of 1.1 nm. The luminescence spectra of the untreated glass can also be ascribed to these Ag nanoclusters. Upon heat-treatment, the clusters coalesce into Ag nanoparticles with an average size of 2.3 nm, and the glasses show an extra surface plasmon absorption band in the visible. These particles, however, cease to emit due to ascribing plasmonic properties of bulk silver.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000323510900003	Publication Date	2013-08-16
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	19	Open Access
Notes	Fwo			Approved	Most recent IF: 2.068; 2013 IF: 2.185
Call Number	UA @ lucian @ c:irua:109455			Serial	3031
Permanent link to this record



Author	Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C.
Title	Size distribution and magnetic behavior of lead inclusions in silicon single crystals			Type	A1 Journal article
Year	1997	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	81	Issue	5	Pages	2148-2152
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	A1997WK08800017	Publication Date	0000-00-00
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979; 1089-7550	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	8	Open Access
Notes				Approved	Most recent IF: 2.068; 1997 IF: 1.630
Call Number	UA @ lucian @ c:irua:21433			Serial	3035
Permanent link to this record



Author	Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J.
Title	Structural defects and epitaxial rotation of C₆₀ and C₇₀ (111) films on GeS(001)			Type	A1 Journal article
Year	1996	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	80	Issue	6	Pages	3310-3318
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	A1996VG68100027	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.183	Times cited	6	Open Access
Notes				Approved
Call Number	UA @ lucian @ c:irua:95233			Serial	3229
Permanent link to this record



Author	Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Dubourdieu, C.; Rosina, M.; Chaudouët, P.
Title	Structure and properties of artificial [(La_0.7Sr_0.3MnO₃)_m(SrTiO₃)_n]₁₅ superlattices on (001)SrTiO₃			Type	A1 Journal article
Year	2003	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	94	Issue	12	Pages	7646-7656
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract	Complex [(La0.7Sr0.3MnO3)(m)(SrTiO3)(n)] [(LSMO)(m)/(STO)(8)](15) superlattices with different layer thicknesses (m=5, 8, 12, 16, 32) have been prepared using pulsed liquid injection metalorganic chemical vapor deposition. Transmission electron microscopy and electron diffraction reveal a very clear and well-separated layer sequence. The remarkable microstructure, as well as the ferromagnetic transition temperature, depends on the LSMO layer thickness. Apart from a very clear layer sequence, electron microscopy shows evidence of a self-assembled nanostructure formation: SrMnO3 nanoinclusions and associated SrTiO3-SrMnO3 thin walls. A formation model and growth mechanism for the self-assembled structure is proposed, based on high resolution and energy filtered elemental imaging. (C) 2003 American Institute of Physics.
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000186969900042	Publication Date	2003-12-04
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	22	Open Access
Notes				Approved	Most recent IF: 2.068; 2003 IF: 2.171
Call Number	UA @ lucian @ c:irua:54822			Serial	3292
Permanent link to this record



Author	Lebedev, O.I.; Hamet, J.F.; Van Tendeloo, G.; Beaumont, V.; Raveau, B.
Title	Structure and properties of the YBa₂Cu₃O_7-x/LaAlO₃ superlattices			Type	A1 Journal article
Year	2001	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
Volume	90	Issue	10	Pages	5261-5267
Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author				Thesis
Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
Language		Wos	000171918700061	Publication Date	2002-07-26
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
Impact Factor	2.068	Times cited	13	Open Access
Notes				Approved	Most recent IF: 2.068; 2001 IF: 2.128
Call Number	UA @ lucian @ c:irua:54821			Serial	3294
Permanent link to this record