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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Farvacque, J.L.; Bougrioua, Z.; Moerman, I.; Van Tendeloo, G.; Lebedev, O. |
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE |
1999 |
Physica: B : condensed matter
T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA |
273-4 |
5 |
UA library record; WoS full record; WoS citing articles |
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|
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Abreu, Y.; Cruz, C.M.; Pinera, I.; Leyva, A.; Cabal, A.E.; van Espen, P.; Van Remortel, N. |
Hyperfine electric parameters calculation in Si samples implanted with 57Mn\rightarrow57Fe |
2014 |
Physica: B : condensed matter |
445 |
|
UA library record; WoS full record; WoS citing articles |
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Aguiar, J.A.; Roa-Rojas, J.; Parra Vargas, C.A.; Landinez Tellez, D.A.; Corredor Bohorquez, L.T.; Shanenko, A.; Jardim, R.F.; Peeters, F. |
Preface |
2014 |
Physica: B : condensed matter |
455 |
|
UA library record; WoS citing articles; WoS full record |
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