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Author
Title
Year
Publication
Volume
Times cited
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Farvacque, J.L.
;
Bougrioua, Z.
;
Moerman, I.
;
Van Tendeloo, G.
;
Lebedev, O.
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
1999
Physica: B : condensed matter T2 – 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
273-4
5
UA library record
;
WoS full record
;
WoS citing articles
Aguiar, J.A.
;
Roa-Rojas, J.
;
Parra Vargas, C.A.
;
Landinez Tellez, D.A.
;
Corredor Bohorquez, L.T.
;
Shanenko, A.
;
Jardim, R.F.
;
Peeters, F.
Preface
2014
Physica: B : condensed matter
455
UA library record
;
WoS citing articles
;
WoS full record
