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“Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds”. Evans T, Kiflawi I, Luyten W, Van Tendeloo G, Woods GS, Proceedings of the Royal Society of London: series A: mathematical and physical sciences 449, 295 (1995). http://doi.org/10.1098/rspa.1995.0045
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.192
Times cited: 32
DOI: 10.1098/rspa.1995.0045
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“Crystal structure of Bi6Sr8-xCa3+xO22(-0.5\leq x\leq1.7): a mixed valence bismuth oxide related to perovskite”. Luhrs CC, Molins E, Van Tendeloo G, Beltran-Porter D, Fuertes A, Chemistry of materials 10, 1875 (1998). http://doi.org/10.1021/cm9800377
Abstract: The crystal structure of BiSr8-xCa3+xO22 has been determined by single-crystal X-ray diffraction. This phase is the same as Bi9Sr11Ca5Oy that was previously studied by several authors as a secondary phase in the Bi-Sr-Ca-Cu-O system and coexists in thermodynamic equilibrium with the superconductors Bi2Sr2CuO6 and Bi2Sr2CaCu2O8 It crystallizes in the monoclinic space group P2(1)/c, with cell parameters a 11.037(3) Angstrom, b = 5.971(2) Angstrom, c = 19.703(7) Angstrom, beta = 101.46(3)degrees Z = 2. The structure was solved by direct methods and full-matrix least-squares refinement. It is built up by perovskite-related blocks of composition [Sr8-xBi2Ca3+xO16] that intergrow with double rows [Bi4O6] running along b. The perovskite blocks are formed by groups of five octahedra that are shifted from each other 3/2 root 2a(p) along [110](p) (a(p) being the parameter of the cubic perovskite subcell) in a zigzag configuration and are aligned with this direction parallel to the one forming an angle of 25" with the c axis. In turn, the perovskite blocks [Sr8-xBi2Ca3+xO16] are shifted from each other 1/2 of both a(p) and root 2a(p) along [100](p) and [110](p), respectively. In the double rows, two trivalent bismuth atoms are placed, forming dimeric anion complexes [Bi2O6].(6-).6- The oxygen atoms around bismuth in these dimers are placed in the vertexes of a distorted trigonal bipyramid, with one vacant position that would be occupied by the lone pairs characteristic for the electronic configuration of Bi(III). The B sites in the perovskite blocks are occupied by pentavalent bismuth atoms and calcium atoms; the remaining Sr and Ca ions occupy the A sites of the perovskite blocks with coordination numbers with oxygen ranging from 10 to 12. The mean valence for Bi is +3.67 [33.3% of Bi(V) and 66.7% of Bi(III)]. The oxygen vacancies are located in the boundaries between domains having the two possible configurations of the perovskite subcell as in the anionic superconductor Bi3BaO5.5. The oxidation of Bi6Sr8-xCa3+xO22 at 650 degrees C allows the complete filling of the oxygen vacancies to form the double perovskite (Sr2-xCax)Bi1.4Ca0.6O6 that shows 92.5% of bismuth in +5 oxidation state. The experimental high-resolution electon microscopy image and the electron diffraction pattern of powder samples along the [010]* zone axis are in good agreement with those calculated from the structural model obtained by single-crystal X-ray diffraction. The material is almost free of defects and the occurrence of planar defects is very exceptional.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 6
DOI: 10.1021/cm9800377
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“Crystallography of fullerites and related graphene textures”. van Landuyt J, Van Tendeloo G, Amelinckx S, Zhang XF, Zhang XB, Luyten W, Materials science forum 150/151, 53 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Defects in high-dose oxygen implanted silicon : a TEM study”. Deveirman A, van Landuyt J, Vanhellemont J, Maes HE, Yallup K, Vacuum: the international journal and abstracting service for vacuum science and technology
T2 –, 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42, 367 (1991). http://doi.org/10.1016/0042-207X(91)90055-N
Abstract: Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.858
Times cited: 4
DOI: 10.1016/0042-207X(91)90055-N
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“Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains”. Lu Y-G, Turner S, Verbeeck J, Janssens SD, Wagner P, Haenen K, Van Tendeloo G, Applied physics letters 101, 041907 (2012). http://doi.org/10.1063/1.4738885
Abstract: The boron dopant distribution in individual heavily boron-doped nanocrystalline diamond film grains, with sizes ranging from 100 to 350nm in diameter, has been studied using a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these tools, the boron distribution and local boron coordination have been determined. Quantification results reveal embedding of B dopants in the diamond lattice, and a preferential enrichment of boron at defective areas and twin boundaries. Coordination mapping reveals a distinct difference in coordination of the B dopants in “pristine” diamond areas and in defective regions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738885]
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 59
DOI: 10.1063/1.4738885
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“Dislocations in diamond : dissociation into partials and their glide motion”. Blumenau AT, Jones R, Frauenheim T, Willems B, Lebedev OI, Van Tendeloo G, Fisher D, Martineau PM, Physical review : B : condensed matter and materials physics 68, 014115 (2003). http://doi.org/10.1103/PhysRevB.68.014115
Abstract: The dissociation of 60degrees and screw dislocations in diamond is modeled in an approach combining isotropic elasticity theory with ab initio-based tight-binding total-energy calculations. Both dislocations are found to dissociate with a substantial lowering of their line energies. For the 60degrees dislocation, however, an energy barrier to dissociation is found. We investigate the core structure of a screw dislocation distinguishing “shuffle,” “mixed,” and “glide” cores. The latter is found to be the most stable undissociated screw dislocation. Further, the glide motion of 90degrees and 30degrees partials is discussed in terms of a process involving the thermal formation and subsequent migration of kinks along the dislocation line. The calculated activation barriers to dislocation motion show that the 30degrees partial is less mobile than the 90degrees partial. Finally, high-resolution electron microscopy is performed on high-temperature, high-pressure annealed natural brown diamond, allowing the core regions of 60degrees dislocations to be imaged. The majority of dislocations are found to be dissociated. However, in some cases, undissociated 60degrees dislocations were also observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 39
DOI: 10.1103/PhysRevB.68.014115
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“Dynamic scattering theory for dark-field electron holography of 3D strain fields”. Lubk A, Javon E, Cherkashin N, Reboh S, Gatel C, Hytch M, Ultramicroscopy 136, 42 (2014). http://doi.org/10.1016/j.ultramic.2013.07.007
Abstract: Dark-held electron holography maps strain in crystal lattices into reconstructed phases over large fields of view. Here we investigate the details of the lattice strain-reconstructed phase relationship by applying dynamic scattering theory both analytically and numerically. We develop efficient analytic linear projection rules for 3D strain fields, facilitating a straight-forward calculation of reconstructed phases from 3D strained materials. They are used in the following to quantify the influence of various experimental parameters like strain magnitude, specimen thickness, excitation error and surface relaxation. (C) 2013 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 18
DOI: 10.1016/j.ultramic.2013.07.007
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“Dynamical effects in strain measurements by dark-field electron holography”. Javon E, Lubk, Cours R, Reboh S, Cherkashin N, Houdellier F, Gatel C, Hytch MJ, Ultramicroscopy 147, 70 (2014). http://doi.org/10.1016/j.ultramic.2014.06.005
Abstract: Here, we study the effect of dynamic scattering on the projected geometric phase and strain maps reconstructed using dark-field electron holography (DFEH) for non-uniformly strained crystals. The investigated structure consists of a {SiGe/Si} superlattice grown on a (001)-Si substrate. The three dimensional strain held within the thin TEM lamella is modelled by the finite element method. The observed projected strain is simulated in two ways by multiplying the strain at each depth in the crystal by a weighting function determined from a recently developed analytical two-beam dynamical theory, and by simply taking the average value. We demonstrate that the experimental results need to be understood in terms of the dynamical theory and good agreement is found between the experimental and simulated results. Discrepancies do remain for certain cases and are likely to be from an imprecision in the actual two-beam diffraction conditions, notably the deviation parameter, and points to limitations in the 2-beam approximation. Finally, a route towards a 3D reconstruction of strain fields is proposed. (C) 2014 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 10
DOI: 10.1016/j.ultramic.2014.06.005
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“Electron microscopy and energy-loss spectroscopy of voidites in pure IaB diamonds”. Luyten W, Van Tendeloo G, Fallon PJ, Woods GS, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 69, 767 (1994). http://doi.org/10.1080/01418619408242517
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
DOI: 10.1080/01418619408242517
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“Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
Abstract: Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.469
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“Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
Abstract: The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.935
Times cited: 1
DOI: 10.1002/crat.2170280804
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“Electron microscopy study of defects in synthetic diamond layers”. Luyten W, Van Tendeloo G, Amelinckx S, Collins JL, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 66, 899 (1992). http://doi.org/10.1080/01418619208247998
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 36
DOI: 10.1080/01418619208247998
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“Electronic reconstruction at n-type SrTiO3/LaAlO3 interfaces”. Verbeeck J, Bals S, Lamoen D, Luysberg M, Huijben M, Rijnders G, Brinkman A, Hilgenkamp H, Blank DHA, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 085113 (2010). http://doi.org/10.1103/PhysRevB.81.085113
Abstract: Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.81.085113
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“Exploiting lens aberrations to create electron-vortex beams”. Clark L, Béché, A, Guzzinati G, Lubk A, Mazilu M, Van Boxem R, Verbeeck J, Physical review letters 111, 064801 (2013). http://doi.org/10.1103/PhysRevLett.111.064801
Abstract: A model for a new electron-vortex beam production method is proposed and experimentally demonstrated. The technique calls on the controlled manipulation of the degrees of freedom of the lens aberrations to achieve a helical phase front. These degrees of freedom are accessible by using the corrector lenses of a transmission electron microscope. The vortex beam is produced through a particular alignment of these lenses into a specifically designed astigmatic state and applying an annular aperture in the condenser plane. Experimental results are found to be in good agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 66
DOI: 10.1103/PhysRevLett.111.064801
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“Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers”. Cheng K, Leys M, Degroote S, van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J, Borghs G, Journal of electronic materials 35, 592 (2006). http://doi.org/10.1007/s11664-006-0105-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.579
Times cited: 102
DOI: 10.1007/s11664-006-0105-1
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“Gallium oxide nanorods : novel, template-free synthesis and high catalytic activity in epoxidation reactions”. Lueangchaichaweng W, Brooks NR, Fiorilli S, Gobechiya E, Lin K, Li L, Parres-Esclapez S, Javon E, Bals S, Van Tendeloo G, Martens JA, Kirschhock CEA, Jacobs PA, Pescarmona PP;, Angewandte Chemie: international edition in English 53, 1585 (2014). http://doi.org/10.1002/anie.201308384
Abstract: Gallium oxide nanorods with unprecedented small dimensions (20-80nm length and 3-5nm width) were prepared using a novel, template-free synthesis method. This nanomaterial is an excellent heterogeneous catalyst for the sustainable epoxidation of alkenes with H2O2, rivaling the industrial benchmark microporous titanosilicate TS-1 with linear alkenes and being much superior with bulkier substrates. A thorough characterization study elucidated the correlation between the physicochemical properties of the gallium oxide nanorods and their catalytic performance, and underlined the importance of the nanorod morphology for generating a material with high specific surface area and a high number of accessible acid sites.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 61
DOI: 10.1002/anie.201308384
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“Growth mode and electronic-structure of the epitaxial C60(111)/GeS(001) interface”. Gensterblum G, Hevesi K, Han BY, Yu LM, Pireaux JJ, Thiry PA, Caudano R, Lucas AA, Bernaerts D, Amelinckx S, Van Tendeloo G, Bendele G, Buslaps T, Johnson RL, Foss M, Feidenhans’l R, Le Lay G;, Physical review : B : condensed matter and materials physics 50, 11981 (1994). http://doi.org/10.1103/PhysRevB.50.11981
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 81
DOI: 10.1103/PhysRevB.50.11981
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“Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy”. Salluzzo M, Aruta C, Maggio-Aprile I, Fischer Ø, Bals S, Zegenhagen J, Physica status solidi: A: applied research 186, 339 (2001). http://doi.org/10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
Abstract: The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 17
DOI: 10.1002/1521-396X(200108)186:3<339::AID-PSSA339>3.0.CO;2-5
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“Heat-induced transformation of CdSe-CdS-ZnS coremultishell quantum dots by Zn diffusion into inner layers”. Yalcin AO, Goris B, van Dijk-Moes RJA, Fan Z, Erdamar AK, Tichelaar FD, Vlugt TJH, Van Tendeloo G, Bals S, Vanmaekelbergh D, Zandbergen HW, van Huis MA;, Chemical communications 51, 3320 (2015). http://doi.org/10.1039/C4CC08647C
Abstract: In this work, we investigate the thermal evolution of CdSeCdSZnS coremultishell quantum dots (QDs) in situ using transmission electron microscopy (TEM). Starting at a temperature of approximately 250 °C, Zn diffusion into inner layers takes place together with simultaneous evaporation of particularly Cd and S. As a result of this transformation, CdxZn1−xSeCdyZn1−yS coreshell QDs are obtained.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.319
Times cited: 21
DOI: 10.1039/C4CC08647C
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“InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 20
DOI: 10.1063/1.106490
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“InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.302
Times cited: 32
DOI: 10.1063/1.106711
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“Infrared spectra of type laB diamonds”. Woods GS, Kiflawi I, Luyten W, Van Tendeloo G, Philosophical magazine letters 67, 405 (1993). http://doi.org/10.1080/09500839308240950
Abstract: It is shown that the infrared absorption spectra of pure type IaB diamonds, namely those that on cursory examination show only a B one-phonon component and neither A nor D, and the complete absence of a B' localized-mode platelet absorption peak, may be divided into two subgroups. The defect content of specimens of one of these subgroups has been studied before and comprises slip dislocations and voidites in random homogeneous distributions unconnected with the transformation of platelets to dislocation loops. Electron microscopy of a specimen of the other subgroup, which may be recognized by the presence of weak additional one-phonon absorption near 1100 cm-1, shows a population of dislocation loops resulting from the complete transformation of a former platelet population, plus accompanying voidites. It is suggested that the extra absorption is caused by the dislocation loops. Observation of the way in which loops and voidites are distributed suggests that voidite production and platelet transformation may not, after all, be interlinked phenomena, but parallel independent processes both promoted by the same unknown conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.087
Times cited: 5
DOI: 10.1080/09500839308240950
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“Intergrowth of components and ramps in coffin-shaped ZSM-5 zeolite crystals unraveled by focused ion beam-assisted transmission electron microscopy”. Lu J, Roeffaers MBJ, Bartholomeeusen E, Sels BF, Schryvers D, Microscopy and microanalysis 20, 42 (2014). http://doi.org/10.1017/S1431927613013731
Abstract: Scanning electron microscopy, focused ion beam (FIB), and transmission electron microscopy are combined to study the intergrowth of 90 degrees rotational components and of ramps in coffin-shaped ZSM-5 crystals. The 90 degrees rotational boundaries with local zig-zag features between different intergrowth components are observed in the main part of crystal. Also a new kind of displacement boundary is described. At the displacement boundary there is a shift of the unit cells along the boundary without a change in orientation. Based on lamellae prepared with FIB from different positions of the ramps and crystal, the orientation relationships between ramps and the main part of the crystal are studied and the three-dimensional morphology and growth mechanism of the ramp are illustrated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
Times cited: 7
DOI: 10.1017/S1431927613013731
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“Interpretation of electron diffraction from carbon nanotube bundles presenting precise helicity”. Colomer J-F, Henrard L, Launois P, Van Tendeloo G, Lucas AA, Lambin P, Physical review : B : condensed matter and materials physics 70, 075408 (2004). http://doi.org/10.1103/PhysRevB.70.075408
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 19
DOI: 10.1103/PhysRevB.70.075408
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“Investigation of (Bi,Pb)2212 crystals : observation of modulation-free phase”. Musolino N, Bals S, Van Tendeloo G, Clayton N, Walker E, Flukiger R, Physica: C : superconductivity 401, 270 (2004). http://doi.org/10.1016/j.physc.2003.09.052
Abstract: We report the complete disappearance of the structural modulation in heavily lead-doped Bi2-xPbxSr2CaCu2O8+delta crystals observed by transmission electron microscopy. Crystals with a nominal lead content of x = 0.8, corresponding to an effective lead content of x = 0.39, yield the non-modulated phase. The superconducting properties of this modulation-free phase (beta phase) have been studied and compared to those of undoped crystals displaying the modulated phase (alpha phase). Magnetisation measurements reveal that the irreversibility field H-irr(T) and relaxation rates are strongly improved within the beta phase. Measurements of the lower critical field, H-cl, show that the anisotropy factor, E, is considerably reduced in the modulation-free crystals. This is the signature of stronger coupling between CuO2 layers which in turn deeply influences the effectiveness of the pinning. These measurements explain the enhanced pinning properties in moderately Pb-doped crystals in which the a phase and P phase coexist. The enhanced pinning is not only due to the alpha/beta interfaces, which act as effective pinning centers: the emergence of modulation-free domains, characterized by a strongly reduced anisotropy, also significantly contribute to this effect. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 9
DOI: 10.1016/j.physc.2003.09.052
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“Lattice deformations in quasi-dynamic strain glass visualised and quantified by aberration corrected electron microscopy”. Lu J, Martinez GT, Van Aert S, Schryvers D, Physica status solidi: B: basic research 251, 2034 (2014). http://doi.org/10.1002/pssb.201350351
Abstract: Advanced transmission electron microscopy and statistical parameter estimated quantification procedures were applied to study the room temperature quasi-dynamical strain glass state in NiTi alloys. Nanosized strain pockets are visualised and the displacements of the atom columns are quantified. A comparison is made with conventional high-resolution transmission electron microscopy images of point defect induced strains in NiAl alloys.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 2
DOI: 10.1002/pssb.201350351
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“Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy”. Lu Y-G, Turner S, Verbeeck J, Janssens SD, Haenen K, Van Tendeloo G, Applied physics letters 103, 032105 (2013). http://doi.org/10.1063/1.4813842
Abstract: Variations in local bond length and coordination in boron-doped nanocrystalline diamond (NCD) films have been studied through changes in the fine structure of boron and carbon K-edges in electron energy-loss spectra, acquired in a scanning transmission electron microscope. The presence of high concentrations of B in pristine diamond regions and enrichment of B at defects in single NCD grains is demonstrated. Local bond length variations are evidenced through an energy shift of the carbon 1s → σ* edge at B-rich defective regions within single diamond grains, indicating an expansion of the diamond bond length at sites with local high B content.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.4813842
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“Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.2388889
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“Morphological transformations and fusion of PbSe nanocrystals studied using atomistic simulations”. Schapotschnikow P, van Huis MA, Zandbergen HW, Vanmaekelbergh D, Vlugt TJH, Nano letters 10, 3966 (2010). http://doi.org/10.1021/nl101793b
Abstract: Molecular dynamics simulations are performed on capped and uncapped PbSe nanocrystals, employing newly developed classical interaction potentials. Here, we show that two uncapped nanocrystals fuse efficiently via direct surface attachment, even if they are initially misaligned. In sharp contrast to the general belief, interparticle dipole interactions do not play a significant role in this oriented attachment process. Furthermore, it is shown that presumably polar, capped PbSe{111} facets are never fully Pb- or Se-terminated.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.712
Times cited: 59
DOI: 10.1021/nl101793b
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“'Natural' and 'man-made' platelets in type-la diamonds”. Kiflawi I, Bruley J, Luyten W, Van Tendeloo G, Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties 78, 299 (1998). http://doi.org/10.1080/13642819808205733
Abstract: 'Natural' platelets are planar defects in {001} planes found in natural type-IaA/B diamonds. 'Man-made' platelets are platelets formed in the laboratory by annealing type-IaA diamonds at temperatures over 2500 degrees C. Careful study shows that the infrared (IR) spectra of the 'man-made' platelets are different from the IR spectra of 'natural' platelets. High-temperature (T greater than or equal to 2000 degrees C) annealing of platelets containing type-IaA/B diamonds modifies the IR absorption spectrum owing to the 'natural' platelets and makes it similar to the IR spectrum of the 'man-made' platelets. It is suggested that such high-temperature annealing changes the structure of the 'natural' platelets. The changes are too subtle to be detected by electron microscopy techniques. Topographic electron-energy-loss spectroscopy shows that platelets contain nitrogen at an average density of 0.7 atoms per a(0)(2); however, high-temperature annealing does not seem to affect the concentration of the nitrogen in the platelets.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1080/13642819808205733
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