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Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations”. Dabral A, Pourtois G, Sankaran K, Magnus W, Yu H, de de Meux AJ, Lu AKA, Clima S, Stokbro K, Schaekers M, Collaert N, Horiguchi N, Houssa M, ECS journal of solid state science and technology 7, N73 (2018). http://doi.org/10.1149/2.0041806JSS
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Charge transfer doping modulated raman scattering and enhanced stability of black phosphorus quantum dots on a ZnO nanorod”. Hu L, Amini MN, Wu Y, Jin Z, Yuan J, Lin R, Wu J, Dai Y, He H, Lu Y, Lu J, Ye Z, Han S-T, Ye J, Partoens B, Zeng Y-J, Ruan S, Advanced Optical Materials 6, 1800440 (2018). http://doi.org/10.1002/ADOM.201800440
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Ionized water confined in graphene nanochannels”. de Aquino BRH, Ghorbanfekr-Kalashami H, Neek-Amal M, Peeters FM, Physical chemistry, chemical physics 21, 9285 (2019). http://doi.org/10.1039/C9CP00075E
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Out-of-plane permittivity of confined water”. Jalali H, Ghorbanfekr H, Hamid I, Neek-Amal M, Rashidi R, Peeters FM, Physical Review E 102, 022803 (2020). http://doi.org/10.1103/PHYSREVE.102.022803
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Atomistic simulation of ultra-short pulsed laser ablation of metals with single and double pulses : an investigation of the re-deposition phenomenon”. Foumani AA, Forster DJ, Ghorbanfekr H, Weber R, Graf T, Niknam AR, Applied Surface Science 537, 147775 (2021). http://doi.org/10.1016/J.APSUSC.2020.147775
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Cation-controlled permeation of charged polymers through nanocapillaries”. Faraji F, Neek-Amal M, Neyts EC, Peeters FM, Physical review E 107, 034501 (2023). http://doi.org/10.1103/PHYSREVE.107.034501
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Atomic level mechanisms of graphene healing by methane-based plasma radicals”. Khalilov U, Yusupov M, Eshonqulov Gb, Neyts Ec, Berdiyorov Gr, FlatChem 39, 100506 (2023). http://doi.org/10.1016/j.flatc.2023.100506
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Asymptotic expansions in the path integral approach to the bipolaron problem”. Smondyrev MA, Devreese JT, Peeters FM, Physical review : B : condensed matter and materials physics 51, 15008 (1995). http://doi.org/10.1103/PhysRevB.51.15008
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Carrier-concentration-dependent polaron cyclotron resonance in GaAs-heterostructures”. Peeters FM, Wu X, Devreese JT, Langerak CJGM, Singleton J, Barnes DJ, Nicholas RJ, Physical review: B 45, 4296 (1992). http://doi.org/10.1103/PhysRevB.45.4296
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Carrier transport in nanodevices: revisiting the Boltzmann and Wigner distribution functions”. Brosens F, Magnus W, Physica status solidi: B: basic research 246, 1656 (2009). http://doi.org/10.1002/pssb.200844424
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Collapse of high field magnetophonon resonance in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, Perenboom JAAJ, van Bockstal L, Herlach F, Harris JJ, Foxon CT, Physical review letters 73, 589 (1994). http://doi.org/10.1103/PhysRevLett.73.589
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Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations”. Shi JM, Farias GA, Koenraad PM, van de Stadt AFW, Peeters FM, Wolter JH, Devreese JT, Brazilian journal of physics 27, 327 (1997)
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Cyclotron resonance of both magnetopolaron branches for polar and neutral optic phonon coupling in the layer compound InSe”. Nicholas RJ, Watts M, Howell DF, Peeters FM, Wu XG, Devreese JT, van Bockstal L, Herlach F, Langerak CJGM, Singleton J, Chevy A, Pysical review: B 45, 12144 (1992). http://doi.org/10.1103/PhysRevB.45.12144
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Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions”. Xu W, Peeters FM, Devreese JT, Leadley DR, Nicholas RJ, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 10, 169 (1996). http://doi.org/10.1142/S0217979296000076
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Diffusion-to-streaming transition in a two-dimensional electron system in a polar semiconductor”. Xu W, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 43, 14134 (1991)
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Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Singleton J, Xu W, Peeters FM, Devreese JT, van Bockstal L, Herlach F, Perenboom JAAJ, Harris JJ, Foxon CT, Surface science : a journal devoted to the physics and chemistry of interfaces 305, 327 (1994). http://doi.org/10.1016/0039-6028(94)90910-5
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Dispersion of longitudinal plasmons for a quasi-two-dimensional electron gas”. Backes WH, Peeters FM, Brosens F, Devreese JT, Physical review : B : condensed matter and materials physics 45, 8437 (1992). http://doi.org/10.1103/PhysRevB.45.8437
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Donor transition energy in GaAs-superlattices in a magnetic field along the growth axis”. Shi JM, Peeters FM, Hai GQ, Devreese JT, Physical review : B : condensed matter and materials physics 44, 5692 (1991)
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DX-center and pressure effects on electronic structure of a δ-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Superlattices and microstructures 23, 83 (1998). http://doi.org/10.1006/spmi.1996.0327
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Electron mobility in Si δ-doped GaAs with spatial correlations in the distribution of charged impurities”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Farias GA, Devreese JT, Wolter JH, Wilamowski Z, Physical review : B : condensed matter and materials physics 55, 13093 (1997)
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Electron mobility in Si delta doped GaAs”. Koenraad PM, van de Stadt AFW, Hai GQ, Shi JM, Vansant P, Peeters FM, Devreese JT, Perenboom JAAJ, Wolter JH, Physica: B : condensed matter 211, 462 (1995). http://doi.org/10.1016/0921-4526(94)01094-H
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Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
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Electronic structure of a Si \delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Physical Review B 54, 7996 (1996). http://doi.org/10.1103/PhysRevB.54.7996
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Electrophonon resonances in a quasi-two-dimensional electron system”. Xu W, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 1562 (1993). http://doi.org/10.1103/PhysRevB.48.1562
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Equivalence of 3D bipolarons in a strong magnetic field to 1D bipolarons”. Smondyrev MA, Kochetov EA, Verbist G, Peeters FM, Devreese JT, Europhysics letters 19, 519 (1992). http://doi.org/10.1209/0295-5075/19/6/013
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Exact equations for large bipolarons in the strong-coupling limit”. Smondyrev MA, Peeters FM, Vansant P, Devreese JT, Journal of physics: A: mathematical and general 27, 7925 (1994)
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Extended stability region for large bipolarons through interaction with multiple phonon branches”. Verbist G, Peeters FM, Devreese JT, Ferroelectrics 130, 27 (1992). http://doi.org/10.1080/00150199208019532
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Far-infrared magneto-optical studies of the polaron effect in low dimensional GaAs-(Ga,Al)As structures”. Langerak CJGM, Singleton J, Perenboom JAA, Devreese JT, Barnes DJ, Nicholas RJ, Huant S, Harris JJ, Foxon CT, Etienne B, Peeters FM, Physica scripta T39, 308 (1991). http://doi.org/10.1088/0031-8949/1991/T39/047
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High-field magneto-resistance in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Foxon CT, Harris JJ, Physica: B : condensed matter 184, 197 (1993). http://doi.org/10.1016/0921-4526(93)90348-A
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High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Singleton J, Perenboom JA, van Bockstal L, Herlach F, Foxon CT, Harris JJ, Physical review : B : condensed matter and materials physics 48, 5457 (1993). http://doi.org/10.1103/PhysRevB.48.5457
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