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	Author	Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C.
	Title	In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si_1-xGe_x/(001)Si structures			Type	A1 Journal article
	Year	2000	Publication	Physical review : B : condensed matter and materials physics	Abbreviated Journal	Phys Rev B
	Volume	61	Issue	15	Pages	10336-10345
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000086606200082	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829;1095-3795;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	27	Open Access
	Notes	Conference Name: Microsc. Semicond. Mater. Conf.			Approved	Most recent IF: 3.836; 2000 IF: NA
	Call Number	UA @ lucian @ c:irua:103456			Serial	1577
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	Author	Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.
	Title	In-situ HREM irradiation study of point defect clustering in strained Ge_xSi_1-x/(001)Si heterostructure			Type	A1 Journal article
	Year	1997	Publication	Conference series of the Institute of Physics	Abbreviated Journal
	Volume	157	Issue		Pages	55-58
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000071954600008	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0305-2346	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	1	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21432			Serial	1578
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	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
	Title	In situ HREM study of electron irradiation effects in AgCl microcrystals			Type	A1 Journal article
	Year	1992	Publication	Ultramicroscopy	Abbreviated Journal	Ultramicroscopy
	Volume	40	Issue		Pages	151-162
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1992HN13400005	Publication Date	2002-10-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-3991;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.436	Times cited	10	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4094			Serial	1581
Permanent link to this record



	Author	Vanhellemont, J.; Claeys, C.; van Landuyt, J.
	Title	In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces			Type	A1 Journal article
	Year	1995	Publication	Physica status solidi: A: applied research	Abbreviated Journal
	Volume	150	Issue		Pages	497-506
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	A1995RQ21500043	Publication Date	2007-01-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	6	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13293			Serial	1582
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	Author	Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
	Title	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines			Type	A1 Journal article
	Year	2001	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
	Volume	90	Issue	1	Pages	167-174
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000169361100023	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.068	Times cited	97	Open Access
	Notes				Approved	Most recent IF: 2.068; 2001 IF: 2.128
	Call Number	UA @ lucian @ c:irua:102855			Serial	1587
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	Author	Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
	Title	In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates			Type	A1 Journal article
	Year	2001	Publication	Journal of materials research	Abbreviated Journal	J Mater Res
	Volume	16	Issue	3	Pages	701-708
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000167407200011	Publication Date	2008-03-06
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0884-2914;2044-5326;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.673	Times cited	4	Open Access
	Notes				Approved	Most recent IF: 1.673; 2001 IF: 1.539
	Call Number	UA @ lucian @ c:irua:103926			Serial	1588
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	Author	Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
	Title	InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy			Type	A1 Journal article
	Year	1992	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	60	Issue		Pages	868-870
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	A1992HD74800027	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	20	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4089			Serial	1590
Permanent link to this record



	Author	Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
	Title	InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy			Type	A1 Journal article
	Year	1992	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	600	Issue	26	Pages	3256-3258
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	A1992JA80600019	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	32	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4102			Serial	1591
Permanent link to this record



	Author	Rembeza, E.S.; Richard, O.; van Landuyt, J.
	Title	Influence of laser and isothermal treatments on microstructural properties of SnO₂ films			Type	A1 Journal article
	Year	1999	Publication	Materials research bulletin	Abbreviated Journal	Mater Res Bull
	Volume	34	Issue	10/11	Pages	1527-1533
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000084625300006	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0025-5408;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.446	Times cited	17	Open Access
	Notes				Approved	Most recent IF: 2.446; 1999 IF: 0.840
	Call Number	UA @ lucian @ c:irua:29691			Serial	1626
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	Author	van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C.
	Title	Influence of twinning on the morphology of AgBr and AgCl microcrystals			Type	A1 Journal article
	Year	2001	Publication	The journal of imaging science and technology	Abbreviated Journal	J Imaging Sci Techn
	Volume	45	Issue		Pages	349-356
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Springfield, Va	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-3701	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.348	Times cited		Open Access
	Notes				Approved	Most recent IF: 0.348; 2001 IF: NA
	Call Number	UA @ lucian @ c:irua:48381			Serial	1657
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	Author	Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
	Title	Interaction of a Ti-capped Co thin film with Si₃N₄			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	26	Pages	4307-4309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000166120500021	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:104225			Serial	1683
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	Author	Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G.
	Title	Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures			Type	A1 Journal article
	Year	2001	Publication	Journal of the electrochemical society	Abbreviated Journal	J Electrochem Soc
	Volume	148	Issue	11	Pages	G597-G601
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000171653100038	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0013-4651;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.259	Times cited	13	Open Access
	Notes				Approved	Most recent IF: 3.259; 2001 IF: 2.033
	Call Number	UA @ lucian @ c:irua:103394			Serial	1725
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	Author	Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A.
	Title	Laser induced phase transition in iron thin films			Type	A1 Journal article
	Year	1994	Publication	Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation	Abbreviated Journal
	Volume	4	Issue		Pages	127-130
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Les Ulis	Editor
	Language		Wos	A1994NT08700028	Publication Date	2007-07-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1155-4339;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	2	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:10003			Serial	1787
Permanent link to this record



	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R.
	Title	Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals			Type	A1 Journal article
	Year	1995	Publication	Surface science : a journal devoted to the physics and chemistry of interfaces	Abbreviated Journal	Surf Sci
	Volume	337	Issue		Pages	153-165
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1995RQ74900024	Publication Date	2003-05-13
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0039-6028;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.925	Times cited	10	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13162			Serial	1836
Permanent link to this record



	Author	Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
	Title	Microstructural characterization of diamond films deposited on c-BN crystals			Type	A1 Journal article
	Year	2000	Publication	Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC	Abbreviated Journal	Diam Relat Mater
	Volume	9	Issue	3-6	Pages	269-273
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000087382400009	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-9635;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.561	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 2.561; 2000 IF: 1.591
	Call Number	UA @ lucian @ c:irua:102877			Serial	2041
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	Author	Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
	Title	Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNb_nS_2n+1			Type	A1 Journal article
	Year	1997	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	172	Issue		Pages	433-439
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1997WL65300019	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.751	Times cited	23	Open Access
	Notes				Approved	Most recent IF: 1.751; 1997 IF: 1.259
	Call Number	UA @ lucian @ c:irua:21405			Serial	2051
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	Author	Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E.
	Title	Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions			Type	A1 Journal article
	Year	2002	Publication	Journal of physics : condensed matter	Abbreviated Journal	J Phys-Condens Mat
	Volume	14	Issue	44	Pages	10983-10988
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000179541700114	Publication Date	2002-10-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-8984;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.649	Times cited	7	Open Access
	Notes				Approved	Most recent IF: 2.649; 2002 IF: 1.775
	Call Number	UA @ lucian @ c:irua:103328			Serial	2061
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	Author	Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K.
	Title	Microstructure of Mn-doped, spin-cast FeSi₂			Type	A1 Journal article
	Year	1997	Publication	Journal of electron microscopy	Abbreviated Journal	Microscopy-Jpn
	Volume	46	Issue	3	Pages	221-225
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Tokyo	Editor
	Language		Wos	A1997XP43400004	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0744; 1477-9986	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.9	Times cited	3	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21410			Serial	2070
Permanent link to this record



	Author	Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
	Title	Morphology and defects in shallow trench isolation structures			Type	A1 Journal article
	Year	1999	Publication	Conference series of the Institute of Physics	Abbreviated Journal
	Volume	164	Issue		Pages	443-446
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000166835300094	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0305-2346	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	1	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29690			Serial	2206
Permanent link to this record



	Author	Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A.
	Title	Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization			Type	A1 Journal article
	Year	1997	Publication	Diamond and related materials	Abbreviated Journal	Diam Relat Mater
	Volume	6	Issue		Pages	159-168
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1997WN37300021	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0925-9635	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.561	Times cited	116	Open Access
	Notes				Approved	Most recent IF: 2.561; 1997 IF: 1.758
	Call Number	UA @ lucian @ c:irua:21406			Serial	2249
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	Author	Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.
	Title	New erbium silicide superstructures: a study by high resolution electron microscopy			Type	A1 Journal article
	Year	1996	Publication	Physica status solidi: A: applied research	Abbreviated Journal
	Volume	158	Issue		Pages	107-116
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	A1996VY72800013	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	6	Open Access
	Notes				Approved	PHYSICS, APPLIED 28/145 Q1 #
	Call Number	UA @ lucian @ c:irua:15460			Serial	2313
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	New intermediate defect configuration in Si studied by in situ HREM irradiation			Type	A1 Journal article
	Year	1997	Publication	Conference series of the Institute of Physics	Abbreviated Journal
	Volume	157	Issue		Pages	43-46
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000071954600006	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0305-2346	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21428			Serial	2318
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	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
	Title	New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views			Type	A1 Journal article
	Year	1997	Publication	The journal of imaging science and technology	Abbreviated Journal	J Imaging Sci Techn
	Volume	41	Issue		Pages	301-307
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Springfield, Va	Editor
	Language		Wos	000077457600017	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-3701	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.348	Times cited	1	Open Access
	Notes				Approved	Most recent IF: 0.348; 1997 IF: NA
	Call Number	UA @ lucian @ c:irua:21346			Serial	2324
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	Author	Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L.
	Title	Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope			Type	A1 Journal article
	Year	1996	Publication	Nuclear instruments and methods in physics research	Abbreviated Journal	Nucl Instrum Meth B
	Volume	B112	Issue		Pages	133-138
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1996UW20100029	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0168-583X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.124	Times cited	4	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:15453			Serial	2423
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope			Type	A1 Journal article
	Year	1998	Publication	Philosophical magazine: A: physics of condensed matter: defects and mechanical properties	Abbreviated Journal	Philos Mag A
	Volume	77	Issue	2	Pages	423-435
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000071976400010	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-8610; 1364-2804	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	23	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29671			Serial	2440
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	Author	Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O.
	Title	Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon			Type	A1 Journal article
	Year	2002	Publication	Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY	Abbreviated Journal	J Phys-Condens Mat
	Volume	14	Issue	48	Pages	13185-13193
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	000180091100068	Publication Date	2002-11-23
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-8984;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.649	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 2.649; 2002 IF: 1.775
	Call Number	UA @ lucian @ c:irua:103326			Serial	2477
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	Author	Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J.
	Title	Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques			Type	A1 Journal article
	Year	2002	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
	Volume	91	Issue	4	Pages	2493-2498
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000173553800114	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.068	Times cited	27	Open Access
	Notes				Approved	Most recent IF: 2.068; 2002 IF: 2.281
	Call Number	UA @ lucian @ c:irua:103372			Serial	2542
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	Author	Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J.
	Title	Phase assembly and microstructure of CeO₂-doped ZrO₂ ceramics prepared by spark plasma sintering			Type	A1 Journal article
	Year	2005	Publication	Journal of the European Ceramic Society	Abbreviated Journal	J Eur Ceram Soc
	Volume	25	Issue	15	Pages	3437-3442
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	CeO2-doped ZrO2, (8 mol%) starting powder was sintered by means of spark plasma sintering (SPS) at 1300 degrees C without holding time. The stability of the tetragonal ZrO2 phase in the Ce-ZrO2 ceramic sintered under strongly reducing conditions was investigated. The SPS sample consisted of monoclinic and tetragonal ZrO2 phase, with a volume ratio of two to one, as well as a trace amount of a Zr-Ce-O cubic solid solution phase. In contrast, the same powder sintered by hot-pressing in nitrogen at 1300 and 1500 degrees C for 1h showed no tetragonal ZrO2. Microstructural observation of the SPS ceramic by SEM and TEM revealed grains with and without twins. The reason for the appearance of the tetragonal phase in the SPS sample sintered under strongly reducing conditions is discussed. (c) 2004 Elsevier Ltd. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Barking	Editor
	Language		Wos	000232172100006	Publication Date	2004-12-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0955-2219;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	13	Open Access
	Notes				Approved	Most recent IF: 3.411; 2005 IF: 1.567
	Call Number	UA @ lucian @ c:irua:104065			Serial	2576
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	Author	Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G.
	Title	Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy			Type	A1 Journal article
	Year	1992	Publication	Journal of physical chemistry	Abbreviated Journal
	Volume	96	Issue		Pages	7424-7430
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1992JM58600054	Publication Date	2005-03-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-3654;1541-5740;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	33	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4101			Serial	2594
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	Author	Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.
	Title	Photoelectric and electrical responses of several erbium silicide/silicon interfaces			Type	A1 Journal article
	Year	1996	Publication	Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE	Abbreviated Journal	Appl Surf Sci
	Volume	102	Issue		Pages	173-177
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1996VJ86100039	Publication Date	2003-05-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0169-4332;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.711	Times cited	3	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:104392			Serial	2611
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