Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Béché, A.; Goris, B.; Freitag, B.; Verbeeck, J. |
Development of a fast electromagnetic beam blanker for compressed sensing in scanning transmission electron microscopy |
2016 |
Applied physics letters |
108 |
40 |
UA library record; WoS full record; WoS citing articles |
Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; |
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond |
2016 |
Applied physics letters |
109 |
20 |
UA library record; WoS full record; WoS citing articles |
Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. |
Towards rapid nanoscale measurement of strain in III-nitride heterostructures |
2013 |
Applied Physics Letters |
103 |
6 |
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. |
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography |
2011 |
Applied physics letters |
99 |
26 |
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
2012 |
Applied Physics Letters |
100 |
|
UA library record; WoS full record; WoS citing articles |
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. |
Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs |
2017 |
Applied physics letters |
111 |
78 |
UA library record; WoS full record; WoS citing articles |
Jannis, D.; Müller-Caspary, K.; Béché, A.; Oelsner, A.; Verbeeck, J. |
Spectroscopic coincidence experiments in transmission electron microscopy |
2019 |
Applied physics letters |
114 |
18 |
UA library record; WoS full record; WoS citing articles |
Wang, J.; Gauquelin, N.; Huijben, M.; Verbeeck, J.; Rijnders, G.; Koster, G. |
Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
Gao, C.; Hofer, C.; Jannis, D.; Béché, A.; Verbeeck, J.; Pennycook, T.J. |
Overcoming contrast reversals in focused probe ptychography of thick materials: An optimal pipeline for efficiently determining local atomic structure in materials science |
2022 |
Applied physics letters |
121 |
9 |
UA library record; WoS full record; WoS citing articles |
Saniz, R.; Dixit, H.; Lamoen, D.; Partoens, B. |
Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 |
2010 |
Applied physics letters |
97 |
23 |
UA library record; WoS full record; WoS citing articles |
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
Gonnissen, J.; de Backer, A.; den Dekker, A.J.; Martinez, G.T.; Rosenauer, A.; Sijbers, J.; Van Aert, S. |
Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images |
2014 |
Applied physics letters |
105 |
12 |
UA library record; WoS full record; WoS citing articles |
Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. |
Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold |
2006 |
Applied Physics Letters |
88 |
8 |
UA library record; WoS full record; WoS citing articles |
Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. |
First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors |
2004 |
Applied Physics Letters |
85 |
16 |
UA library record; WoS full record; WoS citing articles |
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
2005 |
Applied Physics Letters |
86 |
5 |
UA library record; WoS full record; WoS citing articles |
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
de Bleecker, K.; Bogaerts, A.; Goedheer, W. |
Aromatic ring generation as a dust precursor in acetylene discharges |
2006 |
Applied physics letters |
88 |
20 |
UA library record; WoS full record; WoS citing articles |
Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J. |
The dominant role of impurities in the composition of high pressure noble gas plasmas |
2008 |
Applied physics letters |
92 |
115 |
UA library record; WoS full record; WoS citing articles |
Liu, Y.-X.; Zhang, Q.-Z.; Liu, J.; Song, Y.-H.; Bogaerts, A.; Wang, Y.-N. |
Effect of bulk electric field reversal on the bounce resonance heating in dual-frequency capacitively coupled electronegative plasmas |
2012 |
Applied physics letters |
101 |
26 |
UA library record; WoS full record; WoS citing articles |
Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. |
Effect of hydrogen on the growth of thin hydrogenated amorphous carbon films from thermal energy radicals |
2006 |
Applied physics letters |
88 |
35 |
UA library record; WoS full record; WoS citing articles |
Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of hydrogenated silicene and germanene |
2011 |
Applied physics letters |
98 |
63 |
UA library record; WoS full record; WoS citing articles |
Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of two-dimensional hexagonal germanium |
2010 |
Applied physics letters |
96 |
86 |
UA library record; WoS full record; WoS citing articles |
Yusupov, M.; Bultinck, E.; Depla, D.; Bogaerts, A. |
Elucidating the asymmetric behavior of the discharge in a dual magnetron sputter deposition system |
2011 |
Applied physics letters |
98 |
4 |
UA library record; WoS full record; WoS citing articles |
Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism |
2012 |
Applied physics letters |
100 |
63 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. |
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight |
2014 |
Applied physics letters |
104 |
79 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J. |
The influence of impurities on the performance of the dielectric barrier discharge |
2010 |
Applied physics letters |
96 |
28 |
UA library record; WoS full record; WoS citing articles |