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Author Leenaerts, O.; Partoens, B.; Peeters, F.M.
  Title Tunable double Dirac cone spectrum in bilayer \alpha-graphyne Type A1 Journal article
  Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 103 Issue (down) 1 Pages 013105-4
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Monolayer alpha-graphyne was recently proposed as a new all-carbon material having an electronic spectrum consisting of Dirac cones. Based on a first-principles investigation of bilayer alpha-graphyne, we show that the electronic band structure is qualitatively different from its monolayer form and depends crucially on the stacking mode of the two layers. Two stable stacking modes are found: a configuration with a gapless parabolic band structure, similar to AB stacked bilayer graphene, and another one which exhibits a doubled Dirac-cone spectrum. The latter can be tuned by an electric field with a gap opening rate of 0.3 eA. (C) 2013 AIP Publishing LLC.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000321497200032 Publication Date 2013-07-01
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 58 Open Access
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the NOI-BOF of the University of Antwerp, and the ESF EuroGRAPHENE project CONGRAN. ; Approved Most recent IF: 3.411; 2013 IF: 3.515
  Call Number UA @ lucian @ c:irua:109821 Serial 3740
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Author M. K. Kinyanjui, N. Gauquelin, E. Benckiser, H. –U. Habermeier, B. Keimer, U. Kaiser and G.A. Botton
  Title Local lattice distortion and anisotropic modulation in Epitaxially Strained LaNiO3/LaAlO3 hetero-structures Type A1 Journal Article
  Year 2014 Publication Applied Physics Letters Abbreviated Journal
  Volume 104 Issue (down) Pages 221909
  Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
  Abstract Using a complementary combination of x-ray diffraction and atomically resolved imaging we investigated the lattice structure of epitaxial LaNiO3/LaAlO3 superlattices grown on a compressive-strain inducing LaSrAlO4 (001) substrate. A refinement of the structure obtained from the x-ray data revealed the monoclinic I 2/c 1 1 space group. The (Ni/Al)O6 octahedral rotation angle perpendicular to the superlattice plane is enhanced, and the one parallel to the plane is reduced with respect to the corresponding bulk values. High-angle annular dark field imaging was used to determine the lattice parameters within the superlattice unit cell. High-resolution electron microscopy images of the oxygen atoms are consistent with the x-ray results.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000337161700029 Publication Date 2014-06-07
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links
  Impact Factor Times cited 22 Open Access
  Notes Approved Most recent IF: NA
  Call Number EMAT @ emat @ Serial 4545
Permanent link to this record
 
 
Author H. Zhang, N. Gauquelin, G.A. Botton and J.Y.T. Wei
  Title Attenuation of superconductivity in manganite/cuprate heterostructures by epitaxially induced CuO intergrowths Type A1 Journal Article
  Year 2013 Publication Applied Physics Letters Abbreviated Journal
  Volume 103 Issue (down) Pages 052606
  Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
  Abstract We examine the effect of CuO intergrowths on the superconductivity in epitaxial

La 2/3 Ca 1/3 MnO 3 / YBa 2 Cu 3 O 7−δ La2/3Ca1/3MnO3/YBa2Cu3O7−δ

(LCMO/YBCO) thin-film heterostructures. Scanning transmission electron microscopy on bilayer LCMO/YBCO thin films revealed double CuO-chain intergrowths which form regions with the 247 lattice structure in the YBCO layer. These nanoscale 247 regions do not appear in x-ray diffraction, but can physically account for the reduced critical temperature (Tc) of bilayer thin films relative to unilayer films with the same YBCO thickness, at least down to ∼25 nm. We attribute the CuO intergrowths to the bilayer heteroepitaxial mismatch and the Tc reduction to the generally lower Tc seen in bulk 247 samples. These epitaxially-induced CuO intergrowths provide a microstructural mechanism for the attenuation of superconductivity in LCMO/YBCO heterostructures.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000322723000063 Publication Date 2013-08-02
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links
  Impact Factor Times cited 12 Open Access
  Notes Approved Most recent IF: NA
  Call Number EMAT @ emat @ Serial 4546
Permanent link to this record
 
 
Author Schowalter, M.; Titantah, J.T.; Lamoen, D.; Kruse, P.
  Title Ab initio computation of the mean inner Coulomb potential of amorphous carbon structures Type A1 Journal article
  Year 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 86 Issue (down) Pages 112102
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000228050700042 Publication Date 2005-03-04
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 15 Open Access
  Notes Approved Most recent IF: 3.411; 2005 IF: 4.127
  Call Number UA @ lucian @ c:irua:51764 Serial 31
Permanent link to this record
 
 
Author Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M.
  Title Effect of hydrogen on the growth of thin hydrogenated amorphous carbon films from thermal energy radicals Type A1 Journal article
  Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 88 Issue (down) Pages 141922
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000236612000037 Publication Date 2006-04-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 35 Open Access
  Notes Approved Most recent IF: 3.411; 2006 IF: 3.977
  Call Number UA @ lucian @ c:irua:57642 Serial 817
Permanent link to this record
 
 
Author Kálna, K.; Mo×ko, M.; Peeters, F.M.
  Title Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering Type A1 Journal article
  Year 1996 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 68 Issue (down) Pages 117-119
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos A1996TM84700040 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.302 Times cited 10 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:15802 Serial 912
Permanent link to this record
 
 
Author Peeters, F.M.; Li, X.Q.
  Title Hall magnetometer in the ballistic regime Type A1 Journal article
  Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 72 Issue (down) Pages 572-574
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000071704700021 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 119 Open Access
  Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
  Call Number UA @ lucian @ c:irua:24172 Serial 1403
Permanent link to this record
 
 
Author Baelus, B.J.; Peeters, F.M.
  Title Hall potentiometer in the ballistic regime Type A1 Journal article
  Year 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 74 Issue (down) Pages 1600-1602
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000079078200032 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 13 Open Access
  Notes Approved Most recent IF: 3.411; 1999 IF: 4.184
  Call Number UA @ lucian @ c:irua:24170 Serial 1404
Permanent link to this record
 
 
Author Reijniers, J.; Peeters, F.M.
  Title Hybrid ferromagnetic/semiconductor Hall effect device Type A1 Journal article
  Year 1998 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 73 Issue (down) Pages 357-359
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000075275600027 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 35 Open Access
  Notes Approved Most recent IF: 3.411; 1998 IF: 3.349
  Call Number UA @ lucian @ c:irua:24171 Serial 1519
Permanent link to this record
 
 
Author Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J.
  Title InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy Type A1 Journal article
  Year 1992 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 60 Issue (down) Pages 868-870
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos A1992HD74800027 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.302 Times cited 20 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:4089 Serial 1590
Permanent link to this record
 
 
Author Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P.
  Title Nonlinear transport phenomena in a triangular quantum well Type A1 Journal article
  Year 1991 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 59 Issue (down) Pages 1708-1710
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos A1991GH40900019 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.302 Times cited 11 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:945 Serial 2360
Permanent link to this record
 
 
Author Mlinar, V.; Peeters, F.M.
  Title Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates Type A1 Journal article
  Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 91 Issue (down) Pages 021910,1-3
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000248017300025 Publication Date 2007-07-12
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 9 Open Access
  Notes Approved Most recent IF: 3.411; 2007 IF: 3.596
  Call Number UA @ lucian @ c:irua:69643 Serial 2476
Permanent link to this record
 
 
Author Peelaers, H.; Partoens, B.; Peeters, F.M.
  Title Properties of B and P doped Ge nanowires Type A1 Journal article
  Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 90 Issue (down) Pages 263103,1-3
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000247625500068 Publication Date 2007-06-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 35 Open Access
  Notes Approved Most recent IF: 3.411; 2007 IF: 3.596
  Call Number UA @ lucian @ c:irua:69642 Serial 2728
Permanent link to this record
 
 
Author Saniz, R.; Dixit, H.; Lamoen, D.; Partoens, B.
  Title Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 97 Issue (down) Pages 261901-261901,3
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
  Abstract We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000285768100015 Publication Date 2010-12-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 23 Open Access
  Notes Iwt; Fwo; Bof-Noi Approved Most recent IF: 3.411; 2010 IF: 3.841
  Call Number UA @ lucian @ c:irua:85759 Serial 2803
Permanent link to this record
 
 
Author Papp, G.; Peeters, F.M.
  Title Spin filtering in a magnetic-potential barrier structures Type A1 Journal article
  Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 78 Issue (down) Pages 2184-2186
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000167881500031 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 234 Open Access
  Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
  Call Number UA @ lucian @ c:irua:37312 Serial 3089
Permanent link to this record
 
 
Author Papp, G.; Peeters, F.M.
  Title Spin filtering in a magnetic-potential barrier structures: erratum Type A1 Journal article
  Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 79 Issue (down) Pages 3198
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000171896600062 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 104 Open Access
  Notes Approved Most recent IF: 3.411; 2001 IF: 3.849
  Call Number UA @ lucian @ c:irua:37313 Serial 3090
Permanent link to this record
 
 
Author Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S.
  Title Towards rapid nanoscale measurement of strain in III-nitride heterostructures Type A1 Journal article
  Year 2013 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
  Volume 103 Issue (down) Pages 231904
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000328634900025 Publication Date 2013-12-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 6 Open Access
  Notes Approved Most recent IF: 3.411; 2013 IF: 3.515
  Call Number UA @ lucian @ c:irua:136443 Serial 4513
Permanent link to this record
 
 
Author Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R.
  Title Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 99 Issue (down) Pages 261911-261913
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000298638500027 Publication Date 2012-01-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 26 Open Access
  Notes Approved Most recent IF: 3.411; 2011 IF: 3.844
  Call Number UA @ lucian @ c:irua:136428 Serial 4507
Permanent link to this record
 
 
Author Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
  Title Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy Type A1 Journal article
  Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
  Volume 100 Issue (down) Pages 233121
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos Publication Date 2012-06-08
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited Open Access
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794
  Call Number UA @ lucian @ c:irua:136432 Serial 4509
Permanent link to this record
 
 
Author Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
  Title Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy Type A1 Journal article
  Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
  Volume 112 Issue (down) Pages 124505
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000312829400128 Publication Date 2012-12-19
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 14 Open Access
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794
  Call Number UA @ lucian @ c:irua:136433 Serial 4510
Permanent link to this record
 
 
Author Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D.
  Title Improved strain precision with high spatial resolution using nanobeam precession electron diffraction Type A1 Journal article
  Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 103 Issue (down) Pages 241913
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000328706500031 Publication Date 2013-12-14
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 53 Open Access
  Notes Approved Most recent IF: 3.411; 2013 IF: 3.515
  Call Number UA @ lucian @ c:irua:136442 Serial 4502
Permanent link to this record
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