Abstract: In the present work, the Cu-poor and Sn-rich CZTS thin films were prepared in order to study the volatility of Sn with respect to other components. Thin film compositions were kept intentionally Sn-rich to understand the behaviour of loss and segregation of Sn during sulphurization. The homogeneous composition distribution in precursor thin films turns heterogeneous with a change in morphology after sulphurization. The inability of identifying nanoscale secondary phases in CZTS thin film by conventional analytical techniques such as XRD and Raman, can be fulfilled by employing HAADF-STEM analysis. XPS and HAADF-STEM analyses provide the quantification of nanoscale secondary phases across the thin film and surface, respectively. The volatility of Sn was revealed in the form of segregation in the middle layer of CZTS cross-sectional lamella rather than loss to annealing atmosphere. It was observed that among the cations of CZTS, Sn segregates more than Cu, while Zn segregates least. The nanoscale spurious phases were observed to vary across different regions in the sulphurized CZTS sample. The reactive annealing lead to grain growth and formation of grain boundary features in the CZTS thin films, where annealing significantly modifies the potential difference and band bending at grain boundaries with respect to intra-grains.

Abstract: The three-dimensional (3D) nanostructure of Ni4Ti3 precipitates in a porous Ni50.8Ti49.2 alloy has been re-constructed by “Slice-and-View” in a Focused Ion Beam/Scanning Electron Microscope (FIB/SEM). The 3D configuration of these precipitates forming a network structure in the B2 austenite matrix has been characterized via 3D visualization and quantitative analysis including volume fraction, skeleton, degree of anisotropy and local thickness. It is found that dense Ni4Ti3 precipitates occupy 54% of the volume in the B2 austenite matrix. Parallel Ni4Ti3 precipitates grow alongside the surface of a micro-pore, yielding an asymmetric structure, while nano voids do not seem to affect the growth of Ni4Ti3 precipitates. The small average local thickness of the precipitates around 60 nm allows their coherency with the matrix, and further induces the R-phase transformation in the matrix. On the other hand, the B2 matrix exhibits a winding and narrow structure with a skeleton of 18.20 mm and a thickness similar to the precipitates. This discontinuous matrix segmented by the Ni4Ti3 network and pores is responsible for the gradual transformation by stalling the martensite propagation.

Abstract: The microstructural characteristics of two polycrystalline silicon (poly-Si) films with different electrical properties produced by low-pressure chemical vapour deposition on top of high resistivity silicon substrates were investigated by advanced transmission electron microscopy (TEM), including high resolution aberration corrected TEM and automated crystallographic orientation mapping in TEM. The results reveal that the nature of the poly-Si film/Si substrate interface is the main factor controlling the electrical resistivity of the poly-Si films. The high resistivity and high electrical linearity of poly-Si films are strongly promoted by the Sigma 3 twin type character of the poly-Si/Si substrate interface, leading to the generation of a huge amount of extended defects including stacking faults, Sigma 3 twin boundaries as well as Sigma 9 grain boundaries at this interface. Furthermore, a high density of interfacial dislocations has been observed at numerous common and more exotic grain boundaries deviating from their standard crystallographic planes. In contrast, poly-Si film/Si substrate interfaces with random character do not favour the formation of such complex patterns of defects, leading to poor electrical resistivity of the poly-Si film. This finding opens windows for the development of high resistivity silicon substrates for Radio Frequency (RF) integrated circuits (ICs) applications.

Abstract: Oriented trenches are created in h-BN using different catalysts, and used as templates to grow seamlessly integrated armchair and zigzag graphene nanoribbons with chirality-dependent electrical and magnetic conductance properties. The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.

Abstract: The flexoelectric and electronic properties of zig-zag graphene nanoribbons are explored under mechanical bending using state of the art first principles calculations. A linear dependence of the bending induced out of plane polarization on the applied strain gradient is found. The inferior flexoelectric properties of graphene nanoribbons can be improved by more than two orders of magnitude by hydrogen and fluorine functionalization (CH and CF nanoribbons). A large out of plane flexoelectric effect is predicted for CF nanoribbons. The origin of this enhancement lies in the electro-negativity difference between carbon and fluorine atoms, which breaks the out of plane charge symmetry even for a small strain gradient. The flexoelectric effect can be further improved by co-functionalization with hydrogen and fluorine (CHF Janus-type nanoribbon), where a spontaneous out of plane dipole moment is formed even for flat nanoribbons. We also find that bending can control the charge localization of valence band maxima and therefore enables the tuning of the hole effective masses and band gaps. These results present an important advance towards the understanding of flexoelectric and electronic properties of hydrogen and fluorine functionalized graphene nanoribbons, which can have important implications for flexible electronic applications. (C) 2020 Elsevier Ltd. All rights reserved.

Abstract: The heterogeneous precipitation of the eta (MgZn2) phase on the E (Al18Mg3Cr2) dispersoids of the 7075 aluminum alloy was systematically investigated by atomic resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX). It is found that coarse B particles are heterogeneously precipitated at the E particle interface after water quenching and isothermal aging at 120 degrees C. The incoherent E/Al interface is responsible for the high tendency of heterogeneous precipitation of the B phase. Two different orientation relationships (ORs) between the eta, E and Al matrix are identified: OR1 [2 (11) over bar0](eta)[011](E)//[(1) over bar 12](Al), (01 (1) over bar0)(eta)//(13 (3) over bar)(E)//(201)(Al), OR2 [(1) over bar 12](E)//[0001](eta)//[011](Al), (01 (1) over bar0 )(eta)//(220)(E)//(34 (4) over bar)(Al). The eta phase is preferential to nucleate along the {111}(E) or the {220}(E) planes, depending on its OR. The heterogeneous nucleation of B phase on the E particle could stabilize the E/Al interface by introducing a coherent E/eta interface, which increases the drive force of heterogeneous precipitation. The reorientation of eta phase and mutual diffusion of solute atoms could assist the coherency of the E/eta interface. The present results suggest that increasing the coherency of the E/Al interface is a promising method to suppress the heterogeneous precipitation of the eta phase. (C) 2020 Elsevier B.V. All rights reserved.

Abstract: The irreversible release of the lattice oxygen in layered cathodes is one of the major degradation mechanisms of lithium ion batteries, which accounts for a number of battery failures including the voltage/capacity fade, loss of cation ions and detachment of the primary particles, etc. Oxygen release is generally attributed to the stepwise thermodynamic controlled phase transitions from the layered to spinel and rock salt phases. Here, we report a strong kinetic effect from the mobility of cation ions, whose migration barrier can be significantly modulated by the phase epitaxy at the degrading interface. It ends up with a clear oxygen release heterogeneity and completely different reaction pathways between the thin and thick areas, as well as the interparticle valence boundaries, both of which widely exist in the mainstream cathode design with the secondary agglomerates. This work unveils the origin of the heterogenous oxygen release in the layered cathodes. It also sheds light on the rational design of cathode materials with enhanced oxygen stability by suppressing the cation migration.

Abstract: The impact of graphene reinforcement on the mechanical properties of metals has been a subject of intense investigation over the last decade in surface applications to mitigate the impact of tribological loadings or for strengthening purposes when dispersed into a bulk material. Here, the effect on the plastic indentation response of a single graphene layer grown on copper is analyzed for two configurations: one with graphene at the surface, the other with graphene sandwiched under a 100 nm thick copper cap layer. Nanoindentation under both displacement and load control conditions show both earlier and shorter pop-in excursions compared to systems without graphene. Atomic force microscopy reveals much smoother pile-ups with no slip traces in the presence of a surface graphene layer. The configuration with the intercalated graphene layer appears as an ideal elementary system to address bulk hardening mechanisms by indentation testing. Transmission electron microscopy (TEM) cross-sections below indents show more diffuse and homogeneous dislocation activity in the presence of graphene. 3D dislocation dynamics simulations allow unraveling of the origin of these 3D complex phenomena and prove that the collective dislocation mechanisms are dominantly controlled by the strong back stress caused by the graphene barrier. These results provide a quantitative understanding of the impact of graphene on dislocation mechanisms for both surface and bulk applications, but with an impact that is not as large as anticipated from other studies or general literature claims.

Abstract: In this work, the effects of Si-doping in Cu2ZnSnS4 are examined computationally and experimentally. The density functional theory calculations show that an increasing concentration of Si (from x = 0 to x = 1) yields a band gap rise due to shifting of the conduction band minimum towards higher energy states in the Cu2Zn(Sn1-xSix)S-4. CZTSiS thin film prepared by co-sputtering process shows Cu2Zn(Sn1-xSix)S-4 (Si-rich) and Cu2ZnSnS4 (S-rich) kesterite phases on the surface and in the bulk of the sample, respectively. A significant change in surface electronic properties is observed in CZTSiS thin film. Si-doping in CZTS inverts the band bending at grain-boundaries from downward to upward and the Fermi level of CZTSiS shifts upward. Further, the coating of the CdS and ZnO layer improves the photocurrent to approximate to 5.57 mA cm(-2) at -0.41 V-RHE in the CZTSiS/CdS/ZnO sample, which is 2.39 times higher than that of pure CZTS. The flat band potential increases from CZTS approximate to 0.43 V-RHE to CZTSiS/CdS/ZnO approximate to 1.31 V-RHE indicating the faster carrier separation process at the electrode-electrolyte interface in the latter sample. CdS/ZnO layers over CZTSiS significantly reduce the charge transfer resistance at the semiconductor-electrolyte interface.

Abstract: Carbon black (CB) supported Ni, Fe, or Fe-Ni alloy catalysts were synthesized by sol-gel to elucidate the reaction pathways over each catalyst, as well as synergistic effects in glucose to sorbitol hydrogenation. The bimetallic materials presented small and alloyed nanoparticles that were richer in reduced metallic sites at the surface than their monometallic counterparts. Glucose isomerization to fructose was favoured over Fe/CB, while glucose hydrogenation to sorbitol is the dominating pathway over Ni/CB catalyst. By contrast, sorbitol production was promoted and undesired isomerization was suppressed when Fe and Ni formed a nanoalloy. In addition, the alloy catalyst presented better stability than the corresponding monometallic catalyst. A comparison with a mechanical mixture of Fe/CB and Ni/CB monometallic catalysts demonstrated the synergy at the nanoscale in the alloy. By comparing different Fe:Ni ratios, the 1:1 formulation was identified as the best compromise to achieve a high activity while maintaining high sorbitol selectivity.

Abstract: Transmission electron microscopy (TEM) is an ideal tool to investigate nanomaterials. The information from TEM experiments allows us to link the structure and composition of nanomaterials to their intrinsic physical properties. However, despite the significant evolution of the TEM field during the last two decades, major progress is still possible through the development of optimal TEM techniques and supports. The results presented in this thesis focus on the optimization of sample supports and their application. Among the different options, graphene has previously been reported as useful sample support for electron microscopy due to its unparalleled properties, for example, it is the thinnest known support and provides a protective effect to the sample under investigation. Unfortunately, commercial graphene grids show poor quality, in terms of intactness and cleanness, inhibiting their wide application within the field. Therefore, this thesis focuses on the application of optimized graphene TEM grids, obtained by transferring high quality graphene using an advanced procedure. This improvement on the transfer has enabled the visualization of materials with low contrast and high sensitivity towards the electron beam, such as surface ligands capping gold nanoparticles or metal halide perovskites. Furthermore, the implemented protocol is not only of interest for conventional TEM grids but also a major benefit for in situ TEM studies, where the sample is investigated in real time under certain stimuli. Hence, the same graphene transfer technology can be also applied to advanced in situ MEMS holders dedicated for both heating and gas experiments, where the thickness and insulating nature of the silicon nitride (Si3N4) support may hamper some applications. By engineering periodic arrays of holes in their Si3N4 membrane by focused ion beam, onto which the graphene is transferred, it has been possible to get proof-of-concept 3D in situ investigations of heat-induced morphological and compositional transformations of complex nanosystems. As an example, it has enabled the investigation of the possible phase-transition of metal halide perovskites upon heating using 2D and 3D structural characterization. Moreover, it has allowed the study of in situ three-dimensional nanoparticle dynamics during gas phase catalysis as well as the first steps that would lead towards the design and creation of the first Graphene Gas Cell. Consequently, implementation of the advanced graphene transfer technology described in this thesis is envisaged to impact a broad range of future experiments.

Abstract: The strong correlated oxide systems attract a lot of attentions of scientists recently, the coexistence and interplay between various degrees of freedom, such as charge, spin and orbital, has been demonstrated to induce some fancy physical properties and phenomenon, including metal-insulator transition, high temperature superconductivity, colossal magnetoresistance. As a part of the strong correlated oxide systems, the ferroelectrics is abundant in both physical properties and application. First, if the electric dipole continuously rotating around a stable core then a topological structure is produced. If people could manipulate the topological structure and simultaneously observe the structure evolution, with external field applied on the topological structure, then it is very likely for such kind of ferroelectrics to be the next generation of storage, for it is reported to need low power input and produce high density of storage. In the other hand, in solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, such as ferroelectricity and ferromagnetism, antiferroelectricity and antiferromagnetism, but ferrielectricity and ferrimagnetism kept telling a disparate story in microscopic level. The claimed “ferrielectrics” in existing research is equivalent to ferroelectric ones, thus the findings of such a real irreducible solids would complete the last piece of the ferroelectrics family. While solving the above two questions remain challengeable: the size of topological structure is small (typically below 10 nm), general characterization methods are insufficient for such high demand on space resolution, not to mention manipulating and observing its dynamic behavior at an atomic level. Here, employing the spherical aberration corrected electron microscope, we applied external field (heating and bias) on ferroelectrics. Combined with high-end characterization methods including the high-angle annular dark field (HAADF-STEM) image, Electron Energy Loss Spectroscopy (EELS) and integrated differential phase contrast (iDPC), the dynamic evolution of ferroelectrics are observed and analyzed. The main findings of this paper could be concluded as listed here: (1) PbTiO3(001)// SrTiO3(001) is grown on DyScO3 and SrRuO3 by pusled laser deposition, the atomical EDS mapping results reveal that the interface between PTO and STO is atomically sharp. Increasing the thickness of PTO from 1 uc to 21 uc, the topological structure wihtin PTO layer would transform from a/c domain to wave, vortex and finally flux closure domain. The geometric phase analysis results (GPA) reveal that above topological structures are corresponding to various strain. (2) Combined with in-situ biasing holder, the electric bias was applied on polar vortex, and it evolved from vortex (0 V) to polar wave (2 V) and finally polar down (5 V). EELS analysis was performed and we find that negative charge is gathered at vortex core, which turns the Ti4+ to Ti3+ there. The oxygen vacancy at negative polarization surface and the negative charge at the positive polarization surface realized the polarization screening of polar down domain. (3) Through the atomic inspection and analysis on lattice structure of BaFe2Se3, the near ladders within single unit are found to be different in degree of tetramerization, thus leading to a residual polarization along the a-axis. The further in-situ heating and biasing experiment was conducted on BaFe2Se3, and the strong and weak ladders are proved to be independent for their behavior under external field. This findings distinguishes ferrielectrics from ferroelectrics in solids.

Abstract: The morphology and spatial distribution of alpha (α) precipitates have been mapped as a function of Mo content in Ti-Mo binary alloys employing a combinatorial approach. Heat-treatments were carried out on compositionally graded Ti-xMo samples processed using a rapid throughput laser engineered net shape (LENS) process. The composition space spans 1.5 at% to 6 at% Mo with ageing at 750°C, 650°C and 600°C following a β solution treatment. Three distinct regimes of α morphology and distribution were observed. These are colony-dominated microstructures originating from grain boundary α allotriomorphs, bundles of intragranular α laths, and homogeneously distributed individual fine-scale α laths. Branching of the α precipitates was observed in all these domains in a manner reminiscent of solid-state dendritic growth. The phenomenon is particularly apparent at low volume fractions of α. Similar features are present in a wide variety of alloy compositions. 3-dimensional features of such branched structures have been analysed. Simulation of the branching process by phase field methods incorporating anisotropy in the α/β interface energy and elasticity suggests that it can be initiated at growth ledges present at broad faces of the α laths, driven by the enhancement of the diffusion flux at these steps. The dependence of branching on various parameters such as supersaturation and diffusivity, and microstructural features like ledge height and distribution and the presence of adjacent α variants has been evaluated.

Abstract: Precipitation is accompanied by the formation and migration of heterophase interfaces. Using the combined approach of advanced imaging and atomistic simulations, we studied the precipitate-matrix interfaces in various aluminium alloy systems, aiming to resolve their detailed atomic structures and illuminate their role in phase transformations.