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Author |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
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Title |
Compositional characterization of nickel silicides by HAADF-STEM imaging |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Journal of materials science |
Abbreviated Journal |
J Mater Sci |
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Volume |
46 |
Issue  |
7 |
Pages |
2001-2008 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A methodology for the quantitative compositional characterization of nickel silicides by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging is presented. HAADF-STEM images of a set of nickel silicide reference samples Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 are taken at identical experimental conditions. The correlation between sample thickness and HAADF-STEM intensity is discussed. In order to quantify the relationship between the experimental Z-contrast intensities and the composition of the analysed layers, the ratio of the HAADF-STEM intensity to the sample thickness or to the intensity of the silicon substrate is determined for each nickel silicide reference sample. Diffraction contrast is still detected on the HAADF-STEM images, even though the detector is set at the largest possible detection angle. The influence on the quantification results of intensity fluctuations caused by diffraction contrast and channelling is examined. The methodology is applied to FUSI gate devices and to horizontal TFET devices with different nickel silicides formed on source, gate and drain. It is shown that, if the elements which are present are known, this methodology allows a fast quantitative 2-dimensional compositional analysis. |
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Place of Publication |
London |
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Wos |
000286633000002 |
Publication Date |
2011-01-06 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-2461;1573-4803; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.599 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.599; 2011 IF: 2.015 |
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Call Number |
UA @ lucian @ c:irua:88950 |
Serial |
446 |
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Author |
Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Tafuri, F.; Granozio, F.M.; Di Chiara, A.; Bender, H. |
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Title |
A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
74 |
Issue |
7 |
Pages |
1024-1026 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X]. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos |
000078571400043 |
Publication Date |
2002-07-26 |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 1999 IF: 4.184 |
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Call Number |
UA @ lucian @ c:irua:102912 |
Serial |
2686 |
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Author |
Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. |
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Title |
Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
20 |
Issue |
7 |
Pages |
1741-1750 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Place of Publication |
New York, N.Y. |
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Wos |
000230296100012 |
Publication Date |
2005-07-12 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.673 |
Times cited |
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Open Access |
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Notes |
Bil 01/73; IAP V-1 |
Approved |
Most recent IF: 1.673; 2005 IF: 2.104 |
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Call Number |
UA @ lucian @ c:irua:54884 |
Serial |
3631 |
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Author |
Shimizu, K.; Habazaki, H.; Bender, H.; Gijbels, R. |
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Title |
The dawn of surface analysis that stands by the side users: ultra-thin film analysis by rf-GDOES |
Type |
A3 Journal article |
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Year |
2004 |
Publication |
Engineering materials |
Abbreviated Journal |
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Volume |
52 |
Issue |
9 |
Pages |
97-101 |
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Keywords |
A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Publication Date |
0000-00-00 |
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Additional Links |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:51978 |
Serial |
607 |
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