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Author Title Year Publication Volume Times cited Additional Links
Gauquelin, N.; van den Bos, K.H.W.; Béché, A.; Krause, F.F.; Lobato, I.; Lazar, S.; Rosenauer, A.; Van Aert, S.; Verbeeck, J. Determining oxygen relaxations at an interface: A comparative study between transmission electron microscopy techniques 2017 Ultramicroscopy 181 34 UA library record; WoS full record; WoS citing articles
Grieb, T.; Krause, F.F.; Schowalter, M.; Zillmann, D.; Sellin, R.; Müller-Caspary, K.; Mahr, C.; Mehrtens, T.; Bimberg, D.; Rosenauer, A. Strain analysis from nano-beam electron diffraction : influence of specimen tilt and beam convergence 2018 Ultramicroscopy 190 1 UA library record; WoS full record; WoS citing articles
Kruse, P.; Schowalter, M.; Lamoen, D.; Rosenauer, A.; Gerthsen, D. Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography 2006 Ultramicroscopy 106 50 UA library record; WoS full record; WoS citing articles
Müller-Caspary, K.; Krause, F.F.; Winkler, F.; Béché, A.; Verbeeck, J.; Van Aert, S.; Rosenauer, A. Comparison of first moment STEM with conventional differential phase contrast and the dependence on electron dose 2019 Ultramicroscopy 203 25 UA library record; WoS full record; WoS citing articles
Schowalter, M.; Lamoen, D.; Kruse, P.; Gerthsen, D.; Rosenauer, A. First-principles calculations of the mean inner Coulomb potential for sphalerite type II.VI semiconductors 2004 Applied Physics Letters 85 16 UA library record; WoS full record; WoS citing articles
Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kruse, P.; Gerthsen, D. Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold 2006 Applied Physics Letters 88 8 UA library record; WoS full record; WoS citing articles
Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J.P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F. Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 \mum telecom wavelength 2017 Physical review B 96 3 UA library record; WoS full record; WoS citing articles
Guzzinati, G.; Ghielens, W.; Mahr, C.; Béché, A.; Rosenauer, A.; Calders, T.; Verbeeck, J. Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping 2019 Applied physics letters 114 17 UA library record; WoS full record; WoS citing articles
Rossi, E.H.M.; Van Tendeloo, G.; Rosenauer, A. Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM 2007 Philosophical magazine 87 1 UA library record; WoS full record; WoS citing articles
Piscopiello, E.; Rosenauer, A.; Passaseo, A.; Montoya Rossi, E.H.; Van Tendeloo, G. Segregation in InxGa1-xAs/GaAs Stranski-Krastanow layers grown by metal-organic chemical vapour deposition 2005 Philosophical magazine 85 11 UA library record; WoS full record; WoS citing articles
Mahr, C.; Kundu, P.; Lackmann, A.; Zanaga, D.; Thiel, K.; Schowalter, M.; Schwan, M.; Bals, S.; Wittstock, A.; Rosenauer, A. Quantitative determination of residual silver distribution in nanoporous gold and its influence on structure and catalytic performance 2017 Journal of catalysis 352 42 UA library record; WoS full record; WoS citing articles
Verbeeck, J.; Sc hattschneider, P.; Rosenauer, A. Image simulation of high resolution energy filtered TEM images 2009 Ultramicroscopy 109 36 UA library record; WoS full record; WoS citing articles
Gonnissen, J.; de Backer, A.; den Dekker, A.J.; Martinez, G.T.; Rosenauer, A.; Sijbers, J.; Van Aert, S. Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images 2014 Applied physics letters 105 12 UA library record; WoS full record; WoS citing articles
Van Aert, S.; de Backer, A.; Martinez, G.T.; Goris, B.; Bals, S.; Van Tendeloo, G.; Rosenauer, A. Procedure to count atoms with trustworthy single-atom sensitivity 2013 Physical review : B : condensed matter and materials physics 87 106 UA library record; WoS full record; WoS citing articles
Müller, K.; Schowalter, M.; Jansen, J.; Tsuda, K.; Titantah, J.; Lamoen, D.; Rosenauer, A. Refinement of the 200 structure factor for GaAs using parallel and convergent beam electron nanodiffraction data 2009 Ultramicroscopy 109 8 UA library record; WoS full record; WoS citing articles
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Temperature effect on the 002 structure factor of ternary Ga1-xInxAs crystals 2007 Physical review : B : condensed matter and materials physics 76 3 UA library record; WoS full record; WoS citing articles
Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs 2005 Physical Review B 72 42 UA library record; WoS full record; WoS citing articles
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells 2009 Journal of applied physics 105 UA library record; WoS full record
Grieb, T.; Tewes, M.; Schowalter, M.; Müller-Caspary, K.; Krause, F.F.; Mehrtens, T.; Hartmann, J.-M.; Rosenauer, A. Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation 2018 Ultramicroscopy 184 7 UA library record; WoS full record; WoS citing articles
Verbeeck, J.; Van Aert, S.; Zhang, L.; Haiyan, T.; Schattschneider, P.; Rosenauer, A. Computational aspects in quantitative EELS 2010 Microscopy and microanalysis 16 UA library record