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Records |
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Author |
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
|
Volume |
126 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
2-3 |
Pages |
457-465 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KH92500029 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.698 |
Times cited |
4 |
Open Access |
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|
Notes |
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Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:103012 |
Serial |
23 |
Permanent link to this record |
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Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
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Volume |
45 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
2-3 |
Pages |
277-282 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000081748600023 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0167-9317; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.806 |
Times cited |
|
Open Access |
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|
Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
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Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
Permanent link to this record |
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Author |
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
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Title |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
72 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
22 |
Pages |
2877-2879 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000075273700034 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
16 |
Open Access |
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|
Notes |
|
Approved |
Most recent IF: 3.411; 1998 IF: 3.349 |
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Call Number |
UA @ lucian @ c:irua:29684 |
Serial |
1447 |
Permanent link to this record |
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Author |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
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Title |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
Type |
A1 Journal article |
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Year |
1992 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
600 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
26 |
Pages |
3256-3258 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
A1992JA80600019 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.302 |
Times cited |
32 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:4102 |
Serial |
1591 |
Permanent link to this record |
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Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
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Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
77 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
26 |
Pages |
4307-4309 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000166120500021 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
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Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
Permanent link to this record |
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Author |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
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Title |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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Volume |
74 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3 |
Pages |
723-740 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1996VG17300010 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0141-8610;1460-6992; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
20 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
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Call Number |
UA @ lucian @ c:irua:15456 |
Serial |
359 |
Permanent link to this record |
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Author |
Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.; Ivanov, V.; Nagy, J.B. |
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Title |
Electron microscopy study of coiled carbon tubules |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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Volume |
71 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3 |
Pages |
605-630 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1995QQ40400009 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0141-8610;1460-6992; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
72 |
Open Access |
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|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:13290 |
Serial |
969 |
Permanent link to this record |
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Author |
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
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Title |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
16 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3 |
Pages |
701-708 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000167407200011 |
Publication Date |
2008-03-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.673 |
Times cited |
4 |
Open Access |
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|
Notes |
|
Approved |
Most recent IF: 1.673; 2001 IF: 1.539 |
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Call Number |
UA @ lucian @ c:irua:103926 |
Serial |
1588 |
Permanent link to this record |
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Author |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
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Title |
Microstructure of Mn-doped, spin-cast FeSi2 |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
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Volume |
46 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3 |
Pages |
221-225 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Tokyo |
Editor |
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Language |
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Wos |
A1997XP43400004 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0022-0744; 1477-9986 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
0.9 |
Times cited |
3 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
Call Number |
UA @ lucian @ c:irua:21410 |
Serial |
2070 |
Permanent link to this record |
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Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
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Title |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
|
Volume |
67 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3 |
Pages |
745-756 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1993 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
1 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:6783 |
Serial |
2808 |
Permanent link to this record |
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Author |
Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C. |
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Title |
SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Physica: C : superconductivity |
Abbreviated Journal |
Physica C |
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Volume |
210 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3-4 |
Pages |
439-446 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993LG46100018 |
Publication Date |
2002-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
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ISSN |
0921-4534; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
0.942 |
Times cited |
18 |
Open Access |
|
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Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:102977 |
Serial |
3557 |
Permanent link to this record |
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Author |
Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. |
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Title |
Microstructural characterization of diamond films deposited on c-BN crystals |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Diamond and related materials
T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC |
Abbreviated Journal |
Diam Relat Mater |
|
Volume |
9 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3-6 |
Pages |
269-273 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
000087382400009 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.561 |
Times cited |
9 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.561; 2000 IF: 1.591 |
|
Call Number |
UA @ lucian @ c:irua:102877 |
Serial |
2041 |
Permanent link to this record |
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|
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Author |
Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. |
|
Title |
The influence of the h-BN morphology and structure on the c-BN growth |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Diamond and related materials
T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL |
Abbreviated Journal |
Diam Relat Mater |
|
Volume |
10 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
3-7 |
Pages |
1352-1356 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
|
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Language |
|
Wos |
000168730600206 |
Publication Date |
2002-10-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
|
ISSN |
0925-9635; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.561 |
Times cited |
17 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.561; 2001 IF: 1.902 |
|
Call Number |
UA @ lucian @ c:irua:103421 |
Serial |
3586 |
Permanent link to this record |
|
|
|
|
Author |
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
|
Title |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
77 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
4 |
Pages |
507-509 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000088225400016 |
Publication Date |
2002-07-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
44 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
|
Call Number |
UA @ lucian @ c:irua:103448 |
Serial |
712 |
Permanent link to this record |
|
|
|
|
Author |
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
|
Title |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
91 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
4 |
Pages |
2493-2498 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics. |
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Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000173553800114 |
Publication Date |
2002-07-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
27 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
|
Call Number |
UA @ lucian @ c:irua:103372 |
Serial |
2542 |
Permanent link to this record |
|
|
|
|
Author |
Ivanov, V.; Nagy, J.B.; Lambin, P.; Lucas, A.; Zhang, X.B.; Zhang, X.F.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
|
Title |
The study of carbon nanotubules produced by catalytic method |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Chemical physics letters |
Abbreviated Journal |
Chem Phys Lett |
|
Volume |
223 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
4 |
Pages |
329-335 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Catalytic methods for the production of carbon nanotubules have been developed based on the decomposition of acetylene on well-dispersed metal particles strongly adsorbed on a support. Cobalt on silica was found to be the best catalyst-support combination for the production of graphitic tubules. The method for the catalyst preparation and the reaction conditions were optimized. Straight and coiled carbon tubules were obtained with inner and outer diameter of 3-7 and 15-20 nm, respectively, and up to 30 mum in length. These nanotubules were not coated by amorphous carbon. Traces of amorphous carbon could be removed by hydrogen. High resolution electron microscopy images and electron diffraction patterns of the straight nanotubules were similar to those obtained by the arc-discharge method. Coiled nanotubules were revealed by TEM to be regular polygonized helices where the bends are caused by pairs of pentagon-heptagon carbon rings among the hexagonal network. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
A1994NT08000011 |
Publication Date |
2002-07-25 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0009-2614; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.897 |
Times cited |
405 |
Open Access |
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:99869 |
Serial |
3595 |
Permanent link to this record |
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|
|
|
Author |
Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. |
|
Title |
Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
J Phys-Condens Mat |
|
Volume |
14 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
44 |
Pages |
10983-10988 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond. |
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Address |
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
London |
Editor |
|
|
Language |
|
Wos |
000179541700114 |
Publication Date |
2002-10-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0953-8984; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.649 |
Times cited |
7 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
|
Call Number |
UA @ lucian @ c:irua:103328 |
Serial |
2061 |
Permanent link to this record |
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|
|
|
Author |
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
|
Title |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
Abbreviated Journal |
J Phys-Condens Mat |
|
Volume |
14 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
48 |
Pages |
13185-13193 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
London |
Editor |
|
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Language |
|
Wos |
000180091100068 |
Publication Date |
2002-11-23 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0953-8984; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.649 |
Times cited |
3 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
|
Call Number |
UA @ lucian @ c:irua:103326 |
Serial |
2477 |
Permanent link to this record |
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|
|
|
Author |
Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J. |
|
Title |
An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Macromolecules |
Abbreviated Journal |
Macromolecules |
|
Volume |
29 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
5 |
Pages |
1554-1561 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
|
|
Address |
|
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Corporate Author |
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Thesis |
|
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Publisher |
|
Place of Publication |
Washington, D.C. |
Editor |
|
|
Language |
|
Wos |
A1996TY13900024 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0024-9297;1520-5835; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
5.8 |
Times cited |
10 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:15452 |
Serial |
939 |
Permanent link to this record |
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|
|
|
Author |
Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. |
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Title |
A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Philosophical magazine letters |
Abbreviated Journal |
Phil Mag Lett |
|
Volume |
70 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
5 |
Pages |
303-310 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling. |
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Address |
|
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
London |
Editor |
|
|
Language |
|
Wos |
A1994PQ20900008 |
Publication Date |
2007-07-08 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0950-0839;1362-3036; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.087 |
Times cited |
4 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:99816 |
Serial |
3715 |
Permanent link to this record |
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|
|
|
Author |
Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. |
|
Title |
A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
|
Volume |
71 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
5 |
Pages |
1177-1189 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
London |
Editor |
|
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Language |
|
Wos |
A1995QW79500016 |
Publication Date |
0000-00-00 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
|
Times cited |
7 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:13296 |
Serial |
3721 |
Permanent link to this record |
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|
|
|
Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
|
Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
|
Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
|
Volume |
42 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
5-6 |
Pages |
367-369 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Oxford |
Editor |
|
|
Language |
|
Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0042-207X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
|
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
|
Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
Permanent link to this record |
|
|
|
|
Author |
Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; |
|
Title |
Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Journal of the American Ceramic Society |
Abbreviated Journal |
J Am Ceram Soc |
|
Volume |
88 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
7 |
Pages |
1929-1934 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The phase and microstructure relationship of 12 mol% CeO2-stabilized ZrO2 ceramics prepared from coated powder was investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersed Xray spectroscopy (EDS). As compared with the sample prepared with co-precipitated method, which exhibited a similar grain size distribution, the EDS analysis revealed that the powder coating induced a wide distribution of CeO2 solubility, which decreases monotonically with the increase of grain size. This variation of stabilizer content from grain to grain rendered many large grains in the monoclinic phase. Stronger cerium segregation to grain boundaries was observed between large grains, which often form thin amorphous films there. The inhomogeneous; CeO2 distribution keeps more tetragonal ZrO2 grains close to the phase boundary to facilitate the transforming toughness. Addition of an Al2O3 precursor in coated powders effectively raises the overall CeO2 stabilizer content in the grains and preserves more transformable tetragonal phase in the microstructure, which further enhanced the fracture toughness. The dependence of CeO2 solubility on grain size may be explained in a simple coating-controlled diffusion and growth process that deserves further investigation. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Columbus, Ohio |
Editor |
|
|
Language |
|
Wos |
000230128100040 |
Publication Date |
2005-06-23 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0002-7820;1551-2916; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.841 |
Times cited |
11 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.841; 2005 IF: 1.586 |
|
Call Number |
UA @ lucian @ c:irua:103156 |
Serial |
830 |
Permanent link to this record |
|
|
|
|
Author |
Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
|
Title |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Crystal research and technology |
Abbreviated Journal |
Cryst Res Technol |
|
Volume |
28 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
8 |
Pages |
1051-1061 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported. |
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Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
Language |
|
Wos |
A1993MN86700003 |
Publication Date |
2007-01-13 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0232-1300;1521-4079; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
0.935 |
Times cited |
1 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:6788 |
Serial |
952 |
Permanent link to this record |
|
|
|
|
Author |
Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
|
Title |
Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
Volume |
92 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
8 |
Pages |
4336-4341 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000178318000024 |
Publication Date |
2002-10-07 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
2.068 |
Times cited |
5 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
|
Call Number |
UA @ lucian @ c:irua:39872 |
Serial |
2005 |
Permanent link to this record |
|
|
|
|
Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
|
Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
|
Volume |
70 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
9 |
Pages |
3661-3663 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000082289200026 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0034-6748; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
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Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
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Title |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
Type |
A1 Journal article |
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Year |
2004 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
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Volume |
151 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
9 |
Pages |
G598-G605 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000223622000072 |
Publication Date |
2004-08-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0013-4651; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
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Notes |
Fwo; Iuap P5/01 |
Approved |
Most recent IF: 3.259; 2004 IF: 2.356 |
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Call Number |
UA @ lucian @ c:irua:103760 |
Serial |
330 |
Permanent link to this record |
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Author |
Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. |
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Title |
The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Journal of modern optics |
Abbreviated Journal |
J Mod Optic |
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Volume |
43 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
9 |
Pages |
1773-1784 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1996VF31900002 |
Publication Date |
2007-07-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0950-0340;1362-3044; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.008 |
Times cited |
11 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 47/145 Q2 # |
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Call Number |
UA @ lucian @ c:irua:95238 |
Serial |
3594 |
Permanent link to this record |
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Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
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Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
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Volume |
5 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
s:[1] |
Pages |
art. no.-W11.38 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
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Language |
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Wos |
000090103600097 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1092-5783 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
Permanent link to this record |
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Author |
Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
The study of high Tc-superconducting materials by electron microscopy and electron diffraction |
Type |
A1 Journal article |
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Year |
1991 |
Publication |
Superconductor science and technology
T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND |
Abbreviated Journal |
Supercond Sci Tech |
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Volume |
4 |
Issue ![sorted by Issue field, ascending order (up)](img/sort_asc.gif) |
s:[1] |
Pages |
S19-S34 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Bristol |
Editor |
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Language |
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Wos |
A1991FA42000004 |
Publication Date |
2002-08-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-2048;1361-6668; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.325 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 47/145 Q2 # |
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Call Number |
UA @ lucian @ c:irua:104503 |
Serial |
3596 |
Permanent link to this record |