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  Author Title Year Publication Volume Times cited Additional Links Links
Amin-Ahmadi, B.; Idrissi, H.; Delmelle, R.; Pardoen, T.; Proost, J.; Schryvers, D. High resolution transmission electron microscopy characterization of fcc -> 9R transformation in nanocrystalline palladium films due to hydriding 2013 Applied physics letters 102 14 UA library record; WoS full record; WoS citing articles pdf doi
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays 1999 Applied physics letters 75 481 UA library record; WoS full record; WoS citing articles pdf doi
Reijniers, J.; Peeters, F.M. Hybrid ferromagnetic/semiconductor Hall effect device 1998 Applied physics letters 73 35 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 60 20 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 600 32 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling 2011 Applied physics letters 99 1 UA library record; WoS full record; WoS citing articles doi
Martens, T.; Bogaerts, A.; Brok, W.J.M.; van Dijk, J. The influence of impurities on the performance of the dielectric barrier discharge 2010 Applied physics letters 96 28 UA library record; WoS full record; WoS citing articles doi
Mlinar, V.; Peeters, F.M. Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots 2006 Applied physics letters 89 16 UA library record; WoS full record; WoS citing articles url doi
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 Applied physics letters 100 29 UA library record; WoS full record; WoS citing articles doi
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Yang, W.; Chang, K.; Wu, X.G.; Zheng, H.Z.; Peeters, F.M.; Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport 2006 Applied physics letters 89 10 UA library record; WoS full record; WoS citing articles url doi
Liu, Y.; Brelet, Y.; He, Z.; Yu, L.; Forestier, B.; Deng, Y.; Jiang, H.; Houard, A. Laser-induced periodic annular surface structures on fused silica surface 2013 Applied physics letters 102 19 UA library record; WoS full record; WoS citing articles doi
Lu, Y.-G.; Turner, S.; Verbeeck, J.; Janssens, S.D.; Haenen, K.; Van Tendeloo, G. Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy 2013 Applied physics letters 103 15 UA library record; WoS full record; WoS citing articles pdf doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO 2012 Applied physics letters 100 12 UA library record; WoS full record; WoS citing articles pdf doi
Chang, K.; Xia, J.B.; Peeters, F.M. Magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot 2003 Applied physics letters 82 56 UA library record; WoS full record; WoS citing articles url doi
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography 2005 Applied Physics Letters 86 5 UA library record; WoS full record; WoS citing articles doi
Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors 2006 Applied physics letters 89 15 UA library record; WoS full record; WoS citing articles pdf doi
He, Z.; Tian, H.; Deng, G.; Xu, Q.; Van Tendeloo, G. Microstructure of bilayer manganite PrCa2Mn2O7 showing charge/orbital ordering 2013 Applied physics letters 102 4 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
Payette, C.; Partoens, B.; Yu, G.; Gupta, J.A.; Austing, D.G.; Nair, S.V.; Amaha, S.; Tarucha, S. Modeling single-particle energy levels and resonance currents in a coherent electronic quantum dot mixer 2009 Applied physics letters 94 5 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Bogaerts, A.; Rethfeld, B. Modeling ultrashort laser-induced emission from a negatively biased metal 2013 Applied physics letters 103 8 UA library record; WoS full record; WoS citing articles pdf doi
Fix, T.; Ulhaq-Bouillet, C.; Colis, S.; Dinia, A.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G. Nanoscale analysis of interfaces in a metal/oxide/oxide trilayer obtained by pulsed laser deposition 2007 Applied physics letters 91 16 UA library record; WoS full record; WoS citing articles doi
Maignan, A.; Lebedev, O.I.; Van Tendeloo, G.; Martin, C.; Hébert, S. Negative magnetoresistance in a V3+/V4+ mixed valent vanadate 2010 Applied physics letters 96 UA library record; WoS full record; WoS citing articles doi
Mlinar, V.; Peeters, F.M. Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates 2007 Applied physics letters 91 9 UA library record; WoS full record; WoS citing articles url doi
Leenaerts, O.; Partoens, B.; Peeters, F.M. Paramagnetic adsorbates on graphene: a charge transfer analysis 2008 Applied physics letters 92 79 UA library record; WoS full record; WoS citing articles pdf url doi
Costamagna, S.; Schulz, A.; Covaci, L.; Peeters, F. Partially unzipped carbon nanotubes as magnetic field sensors 2012 Applied physics letters 100 10 UA library record; WoS full record; WoS citing articles doi
Chen, Z.; Bogaerts, A.; Vertes, A. Phase explosion in atmospheric pressure infrared laser ablation from water-rich targets 2006 Applied physics letters 89 32 UA library record; WoS full record; WoS citing articles doi
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