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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Bafekry, A.; Shayesteh, S.F.; Ghergherehchi, M.; Peeters, F.M. |
Tuning the bandgap and introducing magnetism into monolayer BC3 by strain/defect engineering and adatom/molecule adsorption |
2019 |
Journal of applied physics |
126 |
56 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Naseri, M.; Fadlallah, M.M.; Faraji, M.; Ghergherehchi, M.; Gogova, D.; Feghhi, S.A.H. |
Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer : a first-principles calculation |
2021 |
Journal Of Applied Physics |
129 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Ghergherehchi, M.; Shayesteh, S.F. |
A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet |
2020 |
Carbon |
157 |
49 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Yagmurcukardes, M.; Shahrokhi, M.; Ghergherehchi, M. |
Electro-optical properties of monolayer and bilayer boron-doped C₃N: Tunable electronic structure via strain engineering and electric field |
2020 |
Carbon |
168 |
21 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. |
Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Ghergherehchi, M. |
Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC3, /C3N and / C3N4 van der Waals heterostructures |
2020 |
Nanotechnology (Bristol. Print) |
|
19 |
UA library record; WoS full record; WoS citing articles |
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