| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Ke, X.; Bals, S.; Cott, D.; Hantschel, T.; Bender, H.; Van Tendeloo, G. |
Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts |
2010 |
Microscopy and microanalysis |
16 |
42 |
UA library record; WoS full record; WoS citing articles |
| Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.; |
Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments |
2006 |
Philosophical magazine |
86 |
12 |
UA library record; WoS full record; WoS citing articles |
| Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
| Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
2016 |
Journal of materials chemistry C : materials for optical and electronic devices |
4 |
|
UA library record; WoS full record; WoS citing articles |
