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Author | Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. | ||||
Title | Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? | Type | A1 Journal article | ||
Year | 2017 | Publication | Japanese journal of applied physics | Abbreviated Journal | Jpn J Appl Phys |
Volume | 56 | Issue | 56 | Pages | 06HA02 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges. | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000425887900001 | Publication Date | 2017-06-01 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
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0021-4922 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.384 | Times cited | 18 | Open Access | OpenAccess |
Notes | The authors would like to thank Drs. Masanobu Honda, Miyako Matsui, Tomohiro Okumura, Tetsuya Tatsumi, Satoshi Hamaguchi, Hiroto Ohtake, Yoshinobu Ohya, Kazunori Shinoda, Masaru Izawa, Hisataka Hayashi, Toshio Hayashi, Makoto Sekine, and Masaru Hori, and all members of the Program and Publication Committee of the 38th International Symposium on Dry Process 2016 held in Sapporo, Japan, as well as Nicholas Altieri and Jeffrey Chang at UCLA for proofreading and providing feedback on the manuscript. | Approved | Most recent IF: 1.384 | ||
Call Number | PLASMANT @ plasmant @ c:irua:143872 | Serial | 4576 | ||
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Author | Ozden, A.; Ay, F.; Sevik, C.; Perkgoz, N.K. | ||||
Title | CVD growth of monolayer MoS2: Role of growth zone configuration and precursors ratio | Type | A1 Journal article | ||
Year | 2017 | Publication | Japanese journal of applied physics | Abbreviated Journal | |
Volume | 56 | Issue | 6s:[1] | Pages | 06gg05 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | Single-layer, large-scale two-dimensional material growth is still a challenge for their wide-range usage. Therefore, we carried out a comprehensive study of monolayer MoS2 growth by CVD investigating the influence of growth zone configuration and precursors ratio. We first compared the two commonly used approaches regarding the relative substrate and precursor positions, namely, horizontal and face-down configurations where facedown approach is found to be more favorable to obtain larger flakes under identical growth conditions. Secondly, we used different types of substrate holders to investigate the influence of the Mo and S vapor confinement on the resulting diffusion environment. We suggest that local changes of the S to Mo vapor ratio in the growth zone is a key factor for the change of shape, size and uniformity of the resulting MoS2 formations, which is also confirmed by performing depositions under different precursor ratios. Therefore, to obtain continuous monolayer films, the S to Mo vapor ratio is needed to be kept within a certain range throughout the substrate. As a conclusion, we obtained monolayer triangles with a side length of 90 mu m and circles with a diameter of 500 mu m and continuous films with an area of 85 0 mu m x 1 cm when the S-to-Mo vapor ratio is optimized. (C) 2017 The Japan Society of Applied Physics | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000401059800003 | Publication Date | 2017-05-08 | |
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0021-4922; 1347-4065 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | Times cited | Open Access | |||
Notes | Approved | no | |||
Call Number | UA @ admin @ c:irua:193783 | Serial | 7747 | ||
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Author | Bogaerts, A.; Gijbels, R.; Goedheer, W. | ||||
Title | Hybrid modeling of a capacitively coupled radio frequency glow discharge in argon: combined Monte Carlo and fluid model | Type | A1 Journal article | ||
Year | 1999 | Publication | Japanese journal of applied physics | Abbreviated Journal | Jpn J Appl Phys |
Volume | 38 | Issue | Pages | 4404-4415 | |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
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Publisher | Place of Publication | Kyoto | Editor | ||
Language | Wos | 000082871400032 | Publication Date | 2002-10-01 | |
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0021-4922;1347-4065; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.384 | Times cited | 45 | Open Access | |
Notes | Approved | Most recent IF: 1.384; 1999 IF: 1.411 | |||
Call Number | UA @ lucian @ c:irua:24922 | Serial | 1523 | ||
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Author | Vereecke, B.; van der Veen, M.H.; Sugiura, M.; Kashiwagi, Y.; Ke, X.; Cott, D.J.; Hantschel, T.; Huyghebaert, C.; Tökei, Z. | ||||
Title | Wafer-level electrical evaluation of vertical carbon nanotube bundles as a function of growth temperature | Type | A1 Journal article | ||
Year | 2013 | Publication | Japanese journal of applied physics | Abbreviated Journal | Jpn J Appl Phys |
Volume | 52 | Issue | 42 | Pages | 04cn02-5 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | We have evaluated the resistance of carbon nanotubes (CNTs) grown at a CMOS-compatible temperature using a realistic integration scheme. The structural analysis of the CNTs by transmission electron microscopy (TEM) showed that the degree of graphitization decreased significantly when the growth temperature was decreased from 540 to 400 °C. The CNTs were integrated to form 150-nm-diameter vertical interconnects between a TiN layer and Cu metal trenches on 200 mm full wafers. Wafers with CNTs grown at low temperature were found to have a lower single-contact resistance than those produced at high temperatures. Thickness measurements showed that the low contact resistance is a result of small contact height. This height dependence is masking the impact of CNT graphitization quality on resistance. When benchmarking our results with data from the literature, a relationship between resistivity and growth temperature cannot be found for CNT-based vertical interconnects. | ||||
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Publisher | Place of Publication | Kyoto | Editor | ||
Language | Wos | 000320002400150 | Publication Date | 2013-03-22 | |
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Series Volume | Series Issue | Edition | |||
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0021-4922;1347-4065; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 1.384 | Times cited | 5 | Open Access | |
Notes | Approved | Most recent IF: 1.384; 2013 IF: 1.057 | |||
Call Number | UA @ lucian @ c:irua:108713 | Serial | 3902 | ||
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Author | Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. | ||||
Title | Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires | Type | A1 Journal article | ||
Year | 2015 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 118 | Issue | 118 | Pages | 104306 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | We perform first-principles calculations to investigate the preferred positions of B and P dopants, both neutral and in their preferred charge state, in Si and Si/SiO2 core-shell nanowires (NWs). In order to understand the observed trends in the formation energy, we isolate the different effects that determine these formation energies. By making the distinction between the unrelaxed and the relaxed formation energy, we separate the impact of the relaxation from that of the chemical environment. The unrelaxed formation energies are determined by three effects: (i) the effect of strain caused by size mismatch between the dopant and the host atoms, (ii) the local position of the band edges, and (iii) a screening effect. In the case of the SiNW (Si/SiO2 NW), these effects result in an increase of the formation energy away from the center (interface). The effect of relaxation depends on the relative size mismatch between the dopant and host atoms. A large size mismatch causes substantial relaxation that reduces the formation energy considerably, with the relaxation being more pronounced towards the edge of the wires. These effects explain the surface segregation of the B dopants in a SiNW, since the atomic relaxation induces a continuous drop of the formation energy towards the edge. However, for the P dopants, the formation energy starts to rise when moving from the center but drops to a minimum just next to the surface, indicating a different type of behavior. It also explains that the preferential location for B dopants in Si/SiO2 core-shell NWs is inside the oxide shell just next to the interface, whereas the P dopants prefer the positions next to the interface inside the Si core, which is in agreement with recent experiments. These preferred locations have an important impact on the electronic properties of these core-shell NWs. Our simulations indicate the possibility of hole gas formation when B segregates into the oxide shell. | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000361636900031 | Publication Date | 2015-09-09 | |
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Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 3 | Open Access | |
Notes | This work was carried out using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen, a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish government and the Universiteit Antwerpen. | Approved | Most recent IF: 2.068; 2015 IF: 2.183 | ||
Call Number | c:irua:128729 | Serial | 4056 | ||
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Author | De Schutter, B.; Van Stiphout, K.; Santos, N.M.; Bladt, E.; Jordan-Sweet, J.; Bals, S.; Lavoie, C.; Comrie, C.M.; Vantomme, A.; Detavernier, C. | ||||
Title | Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111) | Type | A1 Journal article | ||
Year | 2016 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 119 | Issue | 119 | Pages | 135305 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | We studied the solid-phase reaction between a thin Nifilm and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situX-ray diffraction and in situRutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations. | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000374150200035 | Publication Date | 2016-04-05 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 14 | Open Access | OpenAccess |
Notes | The authors thank the FWO-vlaanderen, BOF-UGent (under Contract No. “GOA 01G01513”) and the Hercules Foundation (under Project No. “AUGE/09/014”) for financial support. S. Bals acknowledges financial support from European Research Council (ERC Starting Grant No. “#335078-COLOURATOMS”). A. Vantomme thanks the BOF-KULeuven (under Contract No. “GOA/14/007”) and the Joint Science and Technology Collaboration between the FWO (G.0031.14) and NRF (UID88013). The National Synchrotron Light Source (NSLS), Brookhaven National Laboratory, was supported by the U.S. Department of Energy, Office of Basic Energy Sciences (Contract No. DE-AC02-98CH10886).; ECAS_Sara; (ROMEO:green; preprint:; postprint:can ; pdfversion:restricted); | Approved | Most recent IF: 2.068 | ||
Call Number | c:irua:132897 | Serial | 4066 | ||
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Author | Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D. | ||||
Title | First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides | Type | A1 Journal article | ||
Year | 2016 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 120 | Issue | 120 | Pages | 085707 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) | ||||
Abstract | Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based chalcogenides Cu2-II-IV-VI4 is studied. They are then screened with the aim of identifying potential absorber materials for photovoltaic applications. The spectroscopic limited maximum efficiency (SLME) introduced by Yu and Zunger [Phys. Rev. Lett. 108, 068701 (2012)] is used as a metric for the screening. After constructing the currentvoltage curve, the SLME is calculated from the maximum power output. The role of the nature of the band gap, direct or indirect, and also of the absorptivity of the studied materials on the maximum theoretical power conversion efficiency is studied. Our results show that Cu2II-GeSe4 with II¼ Cd and Hg, and Cu2-II-SnS4 with II ¼ Cd, Hg, and Zn have a higher theoretical efficiency compared with the materials currently used as absorber layer. |
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000383913400074 | Publication Date | 2016-08-30 | |
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ISSN ![]() |
0021-8979 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 29 | Open Access | |
Notes | We acknowledge the financial support from the FWO-Vlaanderen through project G.0150.13N and a GOA fund from the University of Antwerp. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), bothfunded by the FWO-Vlaanderen and the Flemish Government–department EWI. | Approved | Most recent IF: 2.068 | ||
Call Number | c:irua:135089 | Serial | 4113 | ||
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Author | Lumbeeck, G.; Idrissi, H.; Amin-Ahmadi, B.; Favache, A.; Delmelle, R.; Samaee, V.; Proost, J.; Pardoen, T.; Schryvers, D. | ||||
Title | Effect of hydriding induced defects on the small-scale plasticity mechanisms in nanocrystalline palladium thin films | Type | A1 Journal Article | ||
Year | 2018 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
Volume | 124 | Issue | 22 | Pages | 225105 |
Keywords | A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ; | ||||
Abstract | Nanoindentation tests performed on nanocrystalline palladium films subjected to hydriding/dehydriding cycles demonstrate a significant softening when compared to the as-received material. The origin of this softening is unraveled by combining in situ TEM nanomechanical testing with automated crystal orientation mapping in TEM and high resolution TEM. The softening is attributed to the presence of a high density of stacking faults and of Shockley partial dislocations after hydrogen loading. The hydrogen induced defects affect the elementary plasticity mechanisms and the mechanical response by acting as preferential sites for twinning/detwinning during deformation. These results are analyzed and compared to previous experimental and simulation works in the literature. This study provides new insights into the effect of hydrogen on the atomistic deformation and cracking mechanisms as well as on the mechanical properties of nanocrystalline thin films and membranes. | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000453254000025 | Publication Date | 2018-12-14 | |
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0021-8979 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 2 | Open Access | Not_Open_Access |
Notes | This work was supported by the Hercules Foundation under Grant No. AUHA13009, the Flemish Research Fund (FWO) under Grant No. G.0365.15N, and the Flemish Strategic Initiative for Materials (SIM) under the project InterPoCo. Dr. H. Idrissi is mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). We would like to thank Dr. Hadi Pirgazi from UGent for his technical support to process the ACOM data in the OIM Analysis software. | Approved | Most recent IF: 2.068 | ||
Call Number | EMAT @ emat @c:irua:155742 | Serial | 5135 | ||
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Author | Vanraes, P.; Bogaerts, A. | ||||
Title | The essential role of the plasma sheath in plasma–liquid interaction and its applications—A perspective | Type | A1 Journal Article | ||
Year | 2021 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
Volume | 129 | Issue | 22 | Pages | 220901 |
Keywords | A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ; | ||||
Abstract | Based on the current knowledge, a plasma–liquid interface looks and behaves very differently from its counterpart at a solid surface. Local processes characteristic to most liquids include a stronger evaporation, surface deformations, droplet ejection, possibly distinct mechanisms behind secondary electron emission, the formation of an electric double layer, and an ion drift-mediated liquid resistivity. All of them can strongly influence the interfacial charge distribution. Accordingly, the plasma sheath at a liquid surface is most likely unique in its own way, both with respect to its structure and behavior. However, insights into these properties are still rather scarce or uncertain, and more studies are required to further disclose them. In this Perspective, we argue why more research on the plasma sheath is not only recommended but also crucial to an accurate understanding of the plasma–liquid interaction. First, we analyze how the sheath regulates various elementary processes at the plasma–liquid interface, in terms of the electrical coupling, the bidirectional mass transport, and the chemistry between plasma and liquid phase. Next, these three regulatory functions of the sheath are illustrated for concrete applications. Regarding the electrical coupling, a great deal of attention is paid to the penetration of fields into biological systems due to their relevance for plasma medicine, plasma agriculture, and food processing. Furthermore, we illuminate the role of the sheath in nuclear fusion, nanomaterial synthesis, and chemical applications. As such, we hope to motivate the plasma community for more fundamental research on plasma sheaths at liquid surfaces. | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | 000681700000013 | Publication Date | 2021-06-14 | |
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0021-8979 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | Open Access | OpenAccess | |
Notes | P.V. thanks Dr. Angela Privat Maldonado (University of Antwerp) for the fruitful discussions on Sec. III and Professor Mark J. Kushner (University of Michigan) for the interesting discussion on Ref. 198. | Approved | Most recent IF: 2.068 | ||
Call Number | PLASMANT @ plasmant @c:irua:178814 | Serial | 6794 | ||
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Author | Bruggeman, P.J.; Bogaerts, A.; Pouvesle, J.M.; Robert, E.; Szili, E.J. | ||||
Title | Plasma–liquid interactions | Type | A1 Journal Article | ||
Year | 2021 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
Volume | 130 | Issue | 20 | Pages | 200401 |
Keywords | A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ; | ||||
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Publisher | Place of Publication | Editor | |||
Language | Wos | Publication Date | 2021-11-28 | ||
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0021-8979 | ISBN | Additional Links | UA library record | |
Impact Factor | 2.068 | Times cited | Open Access | OpenAccess | |
Notes | Approved | Most recent IF: 2.068 | |||
Call Number | PLASMANT @ plasmant @c:irua:184245 | Serial | 6830 | ||
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Author | Herrebout, D.; Bogaerts, A.; Yan, M.; Goedheer, W.; Dekempeneer, E.; Gijbels, R. | ||||
Title | 1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers | Type | A1 Journal article | ||
Year | 2001 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 90 | Issue | Pages | 570-579 | |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
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Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000169660000007 | Publication Date | 2002-07-26 | |
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0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 83 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2001 IF: 2.128 | |||
Call Number | UA @ lucian @ c:irua:37250 c:irua:37250 c:irua:37250 c:irua:37250 | Serial | 2 | ||
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Author | Li, D.Y.; Zeng, Y.J.; Pereira, L.M.C.; Batuk, D.; Hadermann, J.; Zhang, Y.Z.; Ye, Z.Z.; Temst, K.; Vantomme, A.; Van Bael, M.J.; Van Haesendonck, C.; | ||||
Title | Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films | Type | A1 Journal article | ||
Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 114 | Issue | 3 | Pages | 033909-6 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | Oriented Co nanoparticles were obtained by Co ion implantation in crystalline ZnO thin films grown by pulsed laser deposition. Transmission electron microscopy revealed the presence of elliptically shaped Co precipitates with nanometer size, which are embedded in the ZnO thin films, resulting in anisotropic magnetic behavior. The low-temperature resistance of the Co-implanted ZnO thin films follows the Efros-Shklovskii type variable-range-hopping. Large negative magnetoresistance (MR) exceeding 10% is observed in a magnetic field of 1 T at 2.5K and the negative MR survives up to 250K (0.3%). The negative MR reveals hysteresis as well as anisotropy that correlate well with the magnetic properties, clearly demonstrating the presence of spin-dependent transport. (C) 2013 AIP Publishing LLC. | ||||
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Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000322202700071 | Publication Date | 2013-07-17 | |
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0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 10 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | |||
Call Number | UA @ lucian @ c:irua:110765 | Serial | 126 | ||
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Author | Castelano, L.K.; Hai, G.Q.; Partoens, B.; Peeters, F.M. | ||||
Title | Artificial molecular quantum rings under magnetic field influence | Type | A1 Journal article | ||
Year | 2009 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 106 | Issue | 7 | Pages | 073702,1-073702,8 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | The ground states of a few electrons confined in two vertically coupled quantum rings in the presence of an external magnetic field are studied systematically within the current spin-density functional theory. Electron-electron interactions combined with inter-ring tunneling affect the electronic structure and the persistent current. For small values of the external magnetic field, we recover the zero magnetic field molecular quantum ring ground state configurations. Increasing the magnetic field many angular momentum, spin, and isospin transitions are predicted to occur in the ground state. We show that these transitions follow certain rules, which are governed by the parity of the number of electrons, the single-particle picture, Hunds rules, and many-body effects. | ||||
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Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000270915600047 | Publication Date | 2009-10-03 | |
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0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 5 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2009 IF: 2.072 | |||
Call Number | UA @ lucian @ c:irua:86926 | Serial | 155 | ||
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Author | Chang, K.; Peeters, F.M. | ||||
Title | Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect | Type | A1 Journal article | ||
Year | 2000 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 88 | Issue | Pages | 5246-5251 | |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
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Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000089813800048 | Publication Date | 2002-07-26 | |
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0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 20 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2000 IF: 2.180 | |||
Call Number | UA @ lucian @ c:irua:34355 | Serial | 159 | ||
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Author | Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. | ||||
Title | Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology | Type | A1 Journal article | ||
Year | 2009 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 106 | Issue | 5 | Pages | 053702,1-053702,8 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced. | ||||
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Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000269850300052 | Publication Date | 2009-09-03 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 3 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2009 IF: 2.072 | |||
Call Number | UA @ lucian @ c:irua:79744 | Serial | 214 | ||
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Author | Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. | ||||
Title | Bilayer graphene Hall bar with a pn-junction | Type | A1 Journal article | ||
Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 114 | Issue | 11 | Pages | 113706 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000324827200031 | Publication Date | 2013-09-17 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 3 | Open Access | |
Notes | This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
Call Number | UA @ lucian @ c:irua:111169 | Serial | 234 | ||
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Author | Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. | ||||
Title | Bond length variation in Ga1-xInxAs crystals from the Tersoff potential | Type | A1 Journal article | ||
Year | 2007 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 101 | Issue | 12 | Pages | 123508,1-4 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000247625700034 | Publication Date | 2007-06-20 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 19 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2007 IF: 2.171 | |||
Call Number | UA @ lucian @ c:irua:67460 | Serial | 247 | ||
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Author | Kolev, I.; Bogaerts, A. | ||||
Title | Calculation of gas heating in a dc sputter magnetron | Type | A1 Journal article | ||
Year | 2008 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 104 | Issue | 9 | Pages | 093301,1-093301,8 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | The effect of gas heating in laboratory sputter magnetrons is investigated by means of numerical modeling. The model is two-dimensional in the coordinate space and three-dimensional in the velocity space based on the particle-in-cellMonte Carlo collisions technique. It is expanded in a way that allows the inclusion of the neutral plasma particles (fast gas atoms and sputtered atoms), which makes it possible to calculate the gas temperature and its influence on the discharge behavior in a completely self-consistent way. The results of the model are compared to experimental measurements and to other existing simulation results. The results show that gas heating is pressure dependent (rising with the increase in the gas pressure) and should be taken into consideration at pressures above 10 mTorr. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000260941700017 | Publication Date | 2008-11-07 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 19 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2008 IF: 2.201 | |||
Call Number | UA @ lucian @ c:irua:71286 | Serial | 267 | ||
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Author | Bogaerts, A.; Gijbels, R.; Serikov, V.V. | ||||
Title | Calculation of gas heating in direct current argon glow discharges | Type | A1 Journal article | ||
Year | 2000 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 87 | Issue | 12 | Pages | 8334-8344 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000087346400013 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 63 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2000 IF: 2.180 | |||
Call Number | UA @ lucian @ c:irua:28327 | Serial | 268 | ||
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Author | Schattschneider, P.; Ennen, I.; Stoger-Pollach, M.; Verbeeck, J. | ||||
Title | Circular dichroism in the electron microscope: progress and applications (invited) | Type | A1 Journal article | ||
Year | 2010 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 107 | Issue | 9 | Pages | 09d311,1-09d311,6 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | According to theory, x-ray magnetic circular dichroism in a synchrotron is equivalent to energy loss magnetic chiral dichroism (EMCD) in a transmission electron microscope (TEM). After a synopsis of the development of EMCD, the theoretical background is reviewed and recent results are presented, focusing on the study of magnetic nanoparticles for ferrofluids and Heusler alloys for spintronic devices. Simulated maps of the dichroic strength as a function of atom position in the crystal allow evaluating the influence of specimen thickness and sample tilt on the experimental EMCD signal. Finally, the possibility of direct observation of chiral electronic transitions with atomic resolution in a TEM is discussed. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000277834300276 | Publication Date | 2010-05-12 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 28 | Open Access | |
Notes | Esteem | Approved | Most recent IF: 2.068; 2010 IF: 2.079 | ||
Call Number | UA @ lucian @ c:irua:83653UA @ admin @ c:irua:83653 | Serial | 361 | ||
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Author | Bogaerts, A.; Gijbels, R.; Vlcek, J. | ||||
Title | Collisional-radiative model for an argon glow discharge | Type | A1 Journal article | ||
Year | 1998 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 84 | Issue | Pages | 121-136 | |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000075258100015 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 138 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 1998 IF: 1.729 | |||
Call Number | UA @ lucian @ c:irua:19614 | Serial | 387 | ||
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Author | Ivanov, V.; Proshina, O.; Rakhimova, T.; Rakhimov, A.; Herrebout, D.; Bogaerts, A. | ||||
Title | Comparison of a one-dimensional particle-in-cell-Monte Carlo model and a one-dimensional fluid model for a CH4/H2 capacitively coupled radio frequency discharge | Type | A1 Journal article | ||
Year | 2002 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 91 | Issue | 10 | Pages | 6296-6302 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000175572500007 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 26 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2002 IF: 2.281 | |||
Call Number | UA @ lucian @ c:irua:40187 | Serial | 425 | ||
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Author | Saraiva, M.; Georgieva, V.; Mahieu, S.; van Aeken, K.; Bogaerts, A.; Depla, D. | ||||
Title | Compositional effects on the growth of Mg(M)O films | Type | A1 Journal article | ||
Year | 2010 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 107 | Issue | 3 | Pages | 034902,1-034902,10 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | The influence of the composition on the crystallographic properties of deposited Mg(M)O (with M=Al, Cr, Ti, Y, and Zr) films is studied. For a flexible control of the composition, dual reactive magnetron sputtering was used as deposition technique. Two different approaches to predict the composition are discussed. The first is an experimental way based on the simple relationship between the deposition rate and the target-substrate distance. The second is a route using a Monte Carlo based particle trajectory code. Both methods require a minimal experimental input and enable the user to quickly predict the composition of complex thin films. Good control and flexibility allow us to study the compositional effects on the growth of Mg(M)O films. Pure MgO thin films were grown with a (111) preferential out-of-plane orientation. When adding M to MgO, two trends were noticed. The first trend is a change in the MgO lattice parameters compared to pure MgO. The second tendency is a decrease in the crystallinity of the MgO phase. The experimentally determined crystallographic properties are shown to be in correspondence with the predicted properties from molecular dynamics simulations. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000274517300116 | Publication Date | 2010-02-03 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | Open Access | ||
Notes | Approved | Most recent IF: 2.068; 2010 IF: 2.079 | |||
Call Number | UA @ lucian @ c:irua:80346 | Serial | 447 | ||
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Author | Bogaerts, A.; van Straaten, M.; Gijbels, R. | ||||
Title | Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method | Type | A1 Journal article | ||
Year | 1995 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 77 | Issue | Pages | 1868-1874 | |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | A1995RC30300006 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.183 | Times cited | 87 | Open Access | |
Notes | Approved | no | |||
Call Number | UA @ lucian @ c:irua:12270 | Serial | 655 | ||
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Author | Reijniers, J.; Peeters, F.M. | ||||
Title | Diffusive transport in the hybrid Hall effect device | Type | A1 Journal article | ||
Year | 2000 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 87 | Issue | Pages | 8088-8092 | |
Keywords | A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000087067400075 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 12 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2000 IF: 2.180 | |||
Call Number | UA @ lucian @ c:irua:28516 | Serial | 703 | ||
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Author | Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. | ||||
Title | Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures | Type | A1 Journal article | ||
Year | 1999 | Publication | Journal Of Applied Physics | Abbreviated Journal | J Appl Phys |
Volume | 85 | Issue | Pages | 6625-6631 | |
Keywords | A1 Journal article; Electron Microscopy for Materials Science (EMAT); | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000079871200053 | Publication Date | 2002-07-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 16 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 1999 IF: 2.275 | |||
Call Number | UA @ lucian @ c:irua:24444 | Serial | 743 | ||
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Author | Seyed-Talebi, S.M.; Beheshtian, J.; Neek-Amal, M. | ||||
Title | Doping effect on the adsorption of NH3 molecule onto graphene quantum dot : from the physisorption to the chemisorption | Type | A1 Journal article | ||
Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 114 | Issue | 12 | Pages | 124307-7 |
Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
Abstract | The adsorption of ammonia molecule onto a graphene hexagonal flake, aluminum (Al) and boron (B) doped graphene flakes (graphene quantum dots, GQDs) are investigated using density functional theory. We found that NH3 molecule is absorbed to the hollow site through the physisorption mechanism without altering the electronic properties of GQD. However, the adsorption energy of NH3 molecule onto the Al- and B-doped GQDs increases with respect GQD resulting chemisorption. The adsorption of NH3 onto the Al-doped and B-doped GQDs makes graphene locally buckled, i.e., B-doped and Al-doped GQDs are not planar. The adsorption mechanism onto a GQD is different than that of graphene. This study reveals important features of the edge passivation and doping effects of the adsorption mechanism of external molecules onto the graphene quantum dots. (C) 2013 AIP Publishing LLC. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000325391100057 | Publication Date | 2013-09-26 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 10 | Open Access | |
Notes | ; This work was supported by the EU-Marie Curie IIF Fellowship/299855 for M.-N.A. ; | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
Call Number | UA @ lucian @ c:irua:112201 | Serial | 750 | ||
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Author | Chen, Z.; Bleiner, D.; Bogaerts, A. | ||||
Title | Effect of ambient pressure on laser ablation and plume expansion dynamics: a numerical simulation | Type | A1 Journal article | ||
Year | 2006 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 99 | Issue | 6 | Pages | 063304,1-9 |
Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
Abstract | |||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000236464400008 | Publication Date | 2006-04-06 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 42 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2006 IF: 2.316 | |||
Call Number | UA @ lucian @ c:irua:56903 | Serial | 794 | ||
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Author | Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A. | ||||
Title | Effect of high temperature deposition on CoSi2 phase formation | Type | A1 Journal article | ||
Year | 2013 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 113 | Issue | 23 | Pages | 234902-234908 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000321011700077 | Publication Date | 2013-06-17 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 2 | Open Access | |
Notes | Fwo; Countatoms | Approved | Most recent IF: 2.068; 2013 IF: 2.185 | ||
Call Number | UA @ lucian @ c:irua:109266 | Serial | 815 | ||
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Author | Hezareh, T.; Razavi, F.S.; Kremer, R.K.; Habermeier, H.-U.; Lebedev, O.I.; Kirilenko, D.; Van Tendeloo, G. | ||||
Title | Effect of PbZr0.52Ti0.48O3 thin layer on structure, electronic and magnetic properties of La0.65Sr0.35MnO3 and La0.65Ca0.30MnO3 thin-films | Type | A1 Journal article | ||
Year | 2011 | Publication | Journal of applied physics | Abbreviated Journal | J Appl Phys |
Volume | 109 | Issue | 11 | Pages | 113707,1-113707,8 |
Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
Abstract | Epitaxial thin film heterostructures of high dielectric PbZr<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> (PZT) and La<sub>1-x</sub>A<sub>x</sub>MnO<sub>3</sub> (A-divalent alkaline earth metals such as Sr (LSMO) and Ca (LCMO)) were grown on SrTiO<sub>3</sub> substrates and their structure, temperature dependence of electrical resistivity, and magnetization were investigated as a function of the thickness of the LSMO(LCMO) layer. The microstructures of the samples were analyzed by TEM. By applying an electric field across the PZT layer, we applied a ferrodistortive pressure on the manganite layer and studied the correlations between lattice distortion and electric transport and magnetic properties of the CMR materials. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
Language | Wos | 000292214700069 | Publication Date | 2011-06-06 | |
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN ![]() |
0021-8979; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor | 2.068 | Times cited | 4 | Open Access | |
Notes | Approved | Most recent IF: 2.068; 2011 IF: 2.168 | |||
Call Number | UA @ lucian @ c:irua:90964 | Serial | 843 | ||
Permanent link to this record |