|
Records |
|
Author |
Liu, Y.; Brelet, Y.; He, Z.; Yu, L.; Forestier, B.; Deng, Y.; Jiang, H.; Houard, A. |
|
Title |
Laser-induced periodic annular surface structures on fused silica surface |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
102 |
Issue |
25 |
Pages |
251103-251104 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
We report on the formation of laser-induced periodic annular surface structures on fused silica irradiated with multiple femtosecond laser pulses. This surface morphology emerges after the disappearance of the conventional laser induced periodic surface structures, under successive laser pulse irradiation. It is independent of the laser polarization and universally observed for different focusing geometries. We interpret its formation in terms of the interference between the reflected laser field on the surface of the damage crater and the incident laser pulse. (C) 2013 AIP Publishing LLC. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000321145200003 |
Publication Date |
2013-06-24 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
19 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
Call Number |
UA @ lucian @ c:irua:109832 |
Serial |
1786 |
Permanent link to this record |
|
|
|
|
Author |
Lu, Y.-G.; Turner, S.; Verbeeck, J.; Janssens, S.D.; Haenen, K.; Van Tendeloo, G. |
|
Title |
Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
103 |
Issue |
3 |
Pages |
032105-5 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Variations in local bond length and coordination in boron-doped nanocrystalline diamond (NCD) films have been studied through changes in the fine structure of boron and carbon K-edges in electron energy-loss spectra, acquired in a scanning transmission electron microscope. The presence of high concentrations of B in pristine diamond regions and enrichment of B at defects in single NCD grains is demonstrated. Local bond length variations are evidenced through an energy shift of the carbon 1s → σ* edge at B-rich defective regions within single diamond grains, indicating an expansion of the diamond bond length at sites with local high B content. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000322146300049 |
Publication Date |
2013-07-17 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
15 |
Open Access |
|
|
Notes |
Iap P6/42; Fwo G056810n; 262348 Esmi; 246791 Countatoms; 278510 Vortex; Fwo ECASJO_; |
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
Call Number |
UA @ lucian @ c:irua:109210UA @ admin @ c:irua:109210 |
Serial |
1824 |
Permanent link to this record |
|
|
|
|
Author |
Sorée, B.; Magnus, W.; Vandenberghe, W. |
|
Title |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
Type |
A1 Journal article |
|
Year |
2011 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
99 |
Issue |
23 |
Pages |
233509-233509,3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
We theoretically investigate the phonon, surface roughness and ionized impurity limited low-field mobility of ultrathin silicon n-type nanowire junctionless transistors in the long channel approximation with wire radii ranging from 2 to 5 nm, as function of gate voltage. We show that surface roughness scattering is negligible as long as the wire radius is not too small and ionized impurity scattering is the dominant scattering mechanism. We also show that there exists an optimal radius where the ionized impurity limited mobility exhibits a maximum. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000298006100095 |
Publication Date |
2011-12-09 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
20 |
Open Access |
|
|
Notes |
; This work is supported by the EU project SQWIRE (FP7-ICT-STREP nr. 257111). William Vandenberghe gratefully acknowledges the Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; |
Approved |
Most recent IF: 3.411; 2011 IF: 3.844 |
|
Call Number |
UA @ lucian @ c:irua:92865 |
Serial |
1850 |
Permanent link to this record |
|
|
|
|
Author |
Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; |
|
Title |
Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO |
Type |
A1 Journal article |
|
Year |
2012 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
100 |
Issue |
8 |
Pages |
081603-081603,4 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe3O4 contains only Fe3+ ions. Besides this narrow 2.5 Å interface layer, Fe3O4 shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000300711200014 |
Publication Date |
2012-02-22 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
12 |
Open Access |
|
|
Notes |
The authors thank E. Pellegrin for helpful comments and S. Macke for help with the software REMAGX. S.B. acknowledges financial support by the HZB, Berlin, and the Australian Government via Grant No. RM08550. H.T. acknowledges funding from GOA project “XANES meets ELNES,” J.V. and G.V.T. acknowledge funding from the European Research Council under Grant No. 46791-COUN-TATOMS. The authors acknowledge financial support by the DFG through Forschergruppe FOR 1162. |
Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
|
Call Number |
UA @ lucian @ c:irua:95041UA @ admin @ c:irua:95041 |
Serial |
1860 |
Permanent link to this record |
|
|
|
|
Author |
Chang, K.; Xia, J.B.; Peeters, F.M. |
|
Title |
Magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot |
Type |
A1 Journal article |
|
Year |
2003 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
82 |
Issue |
16 |
Pages |
2661-2663 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The spin interaction and the effective g factor of a magnetic exciton (ME) are investigated theoretically in a diluted magnetic semiconductor (DMS) quantum dot (QD), including the Coulomb interaction and the sp-d exchange interaction. At low magnetic field, the ME energy decreases rapidly with increasing magnetic field and saturates at high magnetic field for high Mn concentration. The ground state of the ME exhibits an interesting crossing behavior between sigma(+)-ME and sigma(-)-ME for low Mn concentration. The g(ex) factor of the ME in a DMS QD displays a monotonic decrease with increasing magnetic field and can be tuned to zero by an external magnetic field. (C) 2003 American Institute of Physics. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000182258800037 |
Publication Date |
2003-04-17 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
56 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2003 IF: 4.049 |
|
Call Number |
UA @ lucian @ c:irua:103301 |
Serial |
1878 |
Permanent link to this record |
|
|
|
|
Author |
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. |
|
Title |
Measurement of the mean inner potential of ZnO nanorods by transmission electron holography |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
86 |
Issue |
15 |
Pages |
|
|
Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000228901600121 |
Publication Date |
2005-04-06 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
5 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2005 IF: 4.127 |
|
Call Number |
UA @ lucian @ c:irua:54917 |
Serial |
1963 |
Permanent link to this record |
|
|
|
|
Author |
Çakir, D.; Peeters, F.M.; Sevik, C. |
|
Title |
Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers : a comparative study |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
104 |
Issue |
20 |
Pages |
203110 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where M = Cr, Mo, W and X = O, S, Se, Te). The C-centered phonon frequencies (i.e., A(1), A(2)'', E ', and E ''), relative frequency values of A(1), and E ' modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures. (C) 2014 AIP Publishing LLC. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000337140800063 |
Publication Date |
2014-05-24 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951;1077-3118; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
130 |
Open Access |
|
|
Notes |
; Cem Sevik acknowledges the support from Scientific and Technological Research Council of Turkey (TUBITAK-113F096) and Anadolu University (BAP-1306F261 and -1306F281) to this project. We would also like to thank the ULAKBIM High Performance and Grid Computing Center for a generous time allocation for our projects. D. C. was supported by a FWO Pegasus-short Marie Curie Fellowship. Part of this work was supported by the Methusalem foundation of the Flemish Government. ; |
Approved |
Most recent IF: 3.411; 2014 IF: 3.302 |
|
Call Number |
UA @ lucian @ c:irua:118379 |
Serial |
1974 |
Permanent link to this record |
|
|
|
|
Author |
Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
|
Title |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
Type |
A1 Journal article |
|
Year |
2006 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
89 |
Issue |
20 |
Pages |
Artn 201908 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000242100200030 |
Publication Date |
2006-11-16 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
15 |
Open Access |
|
|
Notes |
Iap V-1; Fwo |
Approved |
Most recent IF: 3.411; 2006 IF: 3.977 |
|
Call Number |
UA @ lucian @ c:irua:61919 |
Serial |
1978 |
Permanent link to this record |
|
|
|
|
Author |
Buffière, M.; Brammertz, G.; Batuk, M.; Verbist, C.; Mangin, D.; Koble, C.; Hadermann, J.; Meuris, M.; Poortmans, J. |
|
Title |
Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
105 |
Issue |
18 |
Pages |
183903 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
This work presents a detailed analysis of the microstructure and the composition of our record Cu 2ZnSnSe4 (CZTSe)-CdS-ZnO solar cell with a total area efficiency of 9.7%. The average composition of the CZTSe crystallites is Cu 1.94 Zn 1.12Sn0.95Se3.99. Large crystals of ZnSe secondary phase (up to 400 nm diameter) are observed at the voids between the absorber and the back contact, while smaller ZnSe domains are segregated at the grain boundaries and close to the surface of the CZTSe grains. An underlying layer and some particles of Cu xSe are observed at the Mo-MoSe2-Cu2ZnSnSe4 interface. The free surface of the voids at the back interface is covered by an amorphous layer containing Cu, S, O, and C, while the presence of Cd, Na, and K is also observed in this region. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000345000000086 |
Publication Date |
2014-11-08 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951;1077-3118; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
17 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2014 IF: 3.302 |
|
Call Number |
UA @ lucian @ c:irua:121329 |
Serial |
2038 |
Permanent link to this record |
|
|
|
|
Author |
He, Z.; Tian, H.; Deng, G.; Xu, Q.; Van Tendeloo, G. |
|
Title |
Microstructure of bilayer manganite PrCa2Mn2O7 showing charge/orbital ordering |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
102 |
Issue |
21 |
Pages |
212902-212905 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The microstructure of the charge/orbital ordering Ruddleden-Popper phase PrCa2Mn2O7 was studied by transmission electron microscopy along both the [001] and the [110] orientation. Three coexisting charge/orbital ordering phases CO1, CO2, and CO3 were observed along the [001] orientation at room temperature. Different from the one-dimensional modulation in the CO1 and CO2 phase, the CO3 phase is characterized by two sets of mutually perpendicular structural modulations. From [110] high angle annular dark field-scanning transmission electron microscopy, we found that the Pr atoms locate in-between the bilayer MnO6 octahedra, which is different from the previous reports. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000320620400056 |
Publication Date |
2013-05-29 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
4 |
Open Access |
|
|
Notes |
Countatoms |
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
Call Number |
UA @ lucian @ c:irua:108762 |
Serial |
2068 |
Permanent link to this record |
|
|
|
|
Author |
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
|
Title |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
Type |
A1 Journal article |
|
Year |
2012 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
100 |
Issue |
19 |
Pages |
193509-193509,4 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544] |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000304108000098 |
Publication Date |
2012-05-12 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
25 |
Open Access |
|
|
Notes |
; William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by IMEC's Industrial Affiliation Program. ; |
Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
|
Call Number |
UA @ lucian @ c:irua:98948 |
Serial |
2105 |
Permanent link to this record |
|
|
|
|
Author |
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
|
Title |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
96 |
Issue |
21 |
Pages |
213514,1-213514,3 |
|
Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
|
Abstract |
The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000278183200090 |
Publication Date |
2010-05-28 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
26 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
|
Call Number |
UA @ lucian @ c:irua:89509 |
Serial |
2143 |
Permanent link to this record |
|
|
|
|
Author |
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Bogaerts, A.; Rethfeld, B. |
|
Title |
Modeling ultrashort laser-induced emission from a negatively biased metal |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
103 |
Issue |
22 |
Pages |
221603-221604 |
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
Abstract |
A theoretical study of ultrashort laser-induced electron emission from a negatively biased metallic cathode has been performed. Classical as well as tunneling electron emission mechanisms are considered. It was found that electron emission is governed by an interplay of processes inside as well as above the cathode. A hybrid model is proposed, where the electron distribution within the target is retrieved from Boltzmann scattering integrals, while the charge distribution above it is studied by a Particle-In-Cell simulation. The results indicate that non-equilibrium effects determine the initial emission process, whereas the space charge above the target suppresses the effectively emitted charge. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000327696300020 |
Publication Date |
2013-11-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
8 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
Call Number |
UA @ lucian @ c:irua:111815 |
Serial |
2147 |
Permanent link to this record |
|
|
|
|
Author |
Fix, T.; Ulhaq-Bouillet, C.; Colis, S.; Dinia, A.; Bertoni, G.; Verbeeck, J.; Van Tendeloo, G. |
|
Title |
Nanoscale analysis of interfaces in a metal/oxide/oxide trilayer obtained by pulsed laser deposition |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
91 |
Issue |
2 |
Pages |
023106-023106,3 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
Sr2FeMoO6/SrTiO3/CoFe2 trilayers grown by pulsed laser deposition on SrTiO3 (001) are investigated by transmission electron microscopy and electron energy loss spectroscopy. The stack is epitaxial, independent of whether the CoFe2 electrode is grown at 500 or at 50 degrees C. Thus it is possible to obtain epitaxy near room temperature. The SrTiO3/CoFe2 interface is quite sharp, while the Sr2FeMoO6/SrTiO3 interface presents regions of Fe depletion. The chemical composition of the films is close to the nominal stoichiometries. These results could be useful for the growth of heteroepitaxial devices and magnetic tunnel junctions. (C) 2007 American Institute of Physics. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000248017300079 |
Publication Date |
2007-07-10 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
16 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2007 IF: 3.596 |
|
Call Number |
UA @ lucian @ c:irua:94653UA @ admin @ c:irua:94653 |
Serial |
2263 |
Permanent link to this record |
|
|
|
|
Author |
Maignan, A.; Lebedev, O.I.; Van Tendeloo, G.; Martin, C.; Hébert, S. |
|
Title |
Negative magnetoresistance in a V3+/V4+ mixed valent vanadate |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
96 |
Issue |
23 |
Pages |
232502,1-232502,3 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
The magnetotransport and magnetic properties of the PbV6O11 vanadate, crystallizing in the P63mc space group, reveal the existence of a negative magnetoresistance related to its ferromagnetic state (TC ∼ 90 K). The maximum effect is observed at 20 K reaching −30% in 9 T. The structural study of this ceramic reveals a V/Pb ratio smaller than expected from the formula. This is explained by the presence of numerous stacking faults observed by high resolution transmission electron microscopy. The existence of these planar defects acting as resistive barriers along the c axis could be responsible for tunneling magnetoresistance. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000278695900045 |
Publication Date |
2010-06-08 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
|
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
|
Call Number |
UA @ lucian @ c:irua:83293 |
Serial |
2291 |
Permanent link to this record |
|
|
|
|
Author |
Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. |
|
Title |
Nonlinear transport phenomena in a triangular quantum well |
Type |
A1 Journal article |
|
Year |
1991 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
59 |
Issue |
|
Pages |
1708-1710 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
A1991GH40900019 |
Publication Date |
0000-00-00 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; 1077-3118 |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.302 |
Times cited |
11 |
Open Access |
|
|
Notes |
|
Approved |
no |
|
Call Number |
UA @ lucian @ c:irua:945 |
Serial |
2360 |
Permanent link to this record |
|
|
|
|
Author |
Mlinar, V.; Peeters, F.M. |
|
Title |
Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
91 |
Issue |
|
Pages |
021910,1-3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000248017300025 |
Publication Date |
2007-07-12 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
9 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2007 IF: 3.596 |
|
Call Number |
UA @ lucian @ c:irua:69643 |
Serial |
2476 |
Permanent link to this record |
|
|
|
|
Author |
Leenaerts, O.; Partoens, B.; Peeters, F.M. |
|
Title |
Paramagnetic adsorbates on graphene: a charge transfer analysis |
Type |
A1 Journal article |
|
Year |
2008 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
92 |
Issue |
24 |
Pages |
243125,1-3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
We introduce a modified version of the Hirshfeld charge analysis method and demonstrate its accurateness by calculating the charge transfer between the paramagnetic molecule NO2 and graphene. The charge transfer between paramagnetic molecules and a graphene layer as calculated with ab initio methods can crucially depend on the size of the supercell used in the calculation. This has important consequences for adsorption studies involving paramagnetic molecules such as NO2 physisorbed on graphene or on carbon nanotubes. © 2008 American Institute of Physics. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000256934900099 |
Publication Date |
2008-06-24 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
79 |
Open Access |
|
|
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the NOI-BOF of the University of Antwerp, and the Belgian Science Policy (IAP). Discussions with C. Van Alsenoy are gratefully acknowledged. |
Approved |
Most recent IF: 3.411; 2008 IF: 3.726 |
|
Call Number |
UA @ lucian @ c:irua:69619 |
Serial |
2552 |
Permanent link to this record |
|
|
|
|
Author |
Costamagna, S.; Schulz, A.; Covaci, L.; Peeters, F. |
|
Title |
Partially unzipped carbon nanotubes as magnetic field sensors |
Type |
A1 Journal article |
|
Year |
2012 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
100 |
Issue |
23 |
Pages |
232104-232104,3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The conductance through graphene nanoribbons (GNR) connected to a partially unzipped carbon nanotube (CNT) is studied in the presence of an external magnetic field applied parallel to the long axis of the tube by means of non-equilibrium Green's function technique. We consider CNTs that are partially unzipped to form armchair-GNR/zigzag-CNT/armchair-GNR or zigzag-GNR/armchair-CNT/zigzag-GNR junctions. We find that the inclusion of a longitudinal magnetic field affects the electronic states only in the CNT region, leading to the suppression of the conductance at low energies. We demonstrate that both types of junctions can be used as magnetic field sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726039] |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000305089900038 |
Publication Date |
2012-06-07 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
10 |
Open Access |
|
|
Notes |
; L.C. acknowledges support from the Flemish Science Foundation (FWO-Vl) and S.C. from the Belgian Science Foundation (BELSPO). This work is supported by the ESF-EuroGRAPHENE Project CONGRAN. ; |
Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
|
Call Number |
UA @ lucian @ c:irua:99083 |
Serial |
2556 |
Permanent link to this record |
|
|
|
|
Author |
Chen, Z.; Bogaerts, A.; Vertes, A. |
|
Title |
Phase explosion in atmospheric pressure infrared laser ablation from water-rich targets |
Type |
A1 Journal article |
|
Year |
2006 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
89 |
Issue |
4 |
Pages |
041503,1-3 |
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000239376500032 |
Publication Date |
2006-08-09 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
32 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2006 IF: 3.977 |
|
Call Number |
UA @ lucian @ c:irua:58732 |
Serial |
2583 |
Permanent link to this record |
|
|
|
|
Author |
Peelaers, H.; Partoens, B.; Peeters, F.M. |
|
Title |
Phonons in Ge nanowires |
Type |
A1 Journal article |
|
Year |
2009 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
95 |
Issue |
12 |
Pages |
122110,1-122110,3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of the longitudinal acoustic modes. The stability of the nanowires, undoped or doped with B or P atoms, is investigated using the obtained phonon spectra. All considered wires were stable, except for highly doped, very thin nanowires. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000270243800035 |
Publication Date |
2009-09-25 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
12 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2009 IF: 3.554 |
|
Call Number |
UA @ lucian @ c:irua:79307 |
Serial |
2606 |
Permanent link to this record |
|
|
|
|
Author |
Idrissi, H.; Kobler, A.; Amin-Ahmadi, B.; Coulombier, M.; Galceran, M.; Raskin, J.-P.; Godet, S.; Kuebel, C.; Pardoen, T.; Schryvers, D. |
|
Title |
Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
104 |
Issue |
10 |
Pages |
101903 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected. (C) 2014 AIP Publishing LLC. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000333082800022 |
Publication Date |
2014-03-12 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951;1077-3118; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
24 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2014 IF: 3.302 |
|
Call Number |
UA @ lucian @ c:irua:116866 |
Serial |
2649 |
Permanent link to this record |
|
|
|
|
Author |
Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Tafuri, F.; Granozio, F.M.; Di Chiara, A.; Bender, H. |
|
Title |
A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
74 |
Issue |
7 |
Pages |
1024-1026 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X]. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000078571400043 |
Publication Date |
2002-07-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
5 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 1999 IF: 4.184 |
|
Call Number |
UA @ lucian @ c:irua:102912 |
Serial |
2686 |
Permanent link to this record |
|
|
|
|
Author |
Peelaers, H.; Partoens, B.; Peeters, F.M. |
|
Title |
Properties of B and P doped Ge nanowires |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
90 |
Issue |
|
Pages |
263103,1-3 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000247625500068 |
Publication Date |
2007-06-25 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
35 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2007 IF: 3.596 |
|
Call Number |
UA @ lucian @ c:irua:69642 |
Serial |
2728 |
Permanent link to this record |
|
|
|
|
Author |
Martens, T.; Bogaerts, A.; van Dijk, J. |
|
Title |
Pulse shape influence on the atmospheric barrier discharge |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
96 |
Issue |
13 |
Pages |
131503,1-131503,3 |
|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
Abstract |
In this letter we compare the effect of a radio-frequency sine, a low frequency sine, a rectangular and a pulsed dc voltage profile on the calculated electron production and power consumption in the dielectric barrier discharge. We also demonstrate using calculated potential distribution profiles of high time and space resolution how the pulsed dc discharge generates a secondary discharge pulse by deactivating the power supply. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000276275300019 |
Publication Date |
2010-03-31 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
35 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
|
Call Number |
UA @ lucian @ c:irua:81538 |
Serial |
2738 |
Permanent link to this record |
|
|
|
|
Author |
Salje, E.K.H.; Zhang, H.; Schryvers, D.; Bartova, B. |
|
Title |
Quantitative Landau potentials for the martensitic transformation in Ni-Al |
Type |
A1 Journal article |
|
Year |
2007 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
90 |
Issue |
22 |
Pages |
221903,1-3 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
|
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000246909900020 |
Publication Date |
2007-05-30 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
9 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2007 IF: 3.596 |
|
Call Number |
UA @ lucian @ c:irua:64777 |
Serial |
2757 |
Permanent link to this record |
|
|
|
|
Author |
Chang, K.; Xia, J.B.; Wu, H.B.; Feng, S.L.; Peeters, F.M. |
|
Title |
Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
80 |
Issue |
10 |
Pages |
1788-1790 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000174181800036 |
Publication Date |
2002-07-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
8 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2002 IF: 4.207 |
|
Call Number |
UA @ lucian @ c:irua:94932 |
Serial |
2775 |
Permanent link to this record |
|
|
|
|
Author |
Saniz, R.; Dixit, H.; Lamoen, D.; Partoens, B. |
|
Title |
Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
97 |
Issue |
|
Pages |
261901-261901,3 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) |
|
Abstract |
We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000285768100015 |
Publication Date |
2010-12-28 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
23 |
Open Access |
|
|
Notes |
Iwt; Fwo; Bof-Noi |
Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
|
Call Number |
UA @ lucian @ c:irua:85759 |
Serial |
2803 |
Permanent link to this record |
|
|
|
|
Author |
Neek-Amal, M.; Sadeghi, A.; Berdiyorov, G.R.; Peeters, F.M. |
|
Title |
Realization of free-standing silicene using bilayer graphene |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
103 |
Issue |
26 |
Pages |
261904-4 |
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
Abstract |
The available synthesized silicene-like structures have been only realized on metallic substrates which are very different from the standalone buckled silicene, e. g., the Dirac cone of silicene is destroyed due to lattice distortion and the interaction with the substrate. Using graphene bilayer as a scaffold, a route is proposed to synthesize silicene with electronic properties decoupled from the substrate. The buckled hexagonal arrangement of silicene between the graphene layers is found to be very similar to the theoretically predicted standalone buckled silicene which is only very weakly van der Waals coupled to the graphene layers with a graphite-like interlayer distance of 3.42 angstrom and without any lattice distortion. We found that these stacked layers are stable well above room temperature. (C) 2013 AIP Publishing LLC. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000329977400022 |
Publication Date |
2013-12-26 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951;1077-3118; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
74 |
Open Access |
|
|
Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem Foundation of the Flemish Government. M.N.-A. was supported by the EU-Marie Curie IIF postdoc Fellowship/299855. ; |
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
|
Call Number |
UA @ lucian @ c:irua:114849 |
Serial |
2837 |
Permanent link to this record |
|
|
|
|
Author |
Kalkert, C.; Krisponeit, J.-O.; Esseling, M.; Lebedev, O.I.; Moshnyaga, V.; Damaschke, B.; Van Tendeloo, G.; Samwer, K. |
|
Title |
Resistive switching at manganite/manganite interfaces |
Type |
A1 Journal article |
|
Year |
2011 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
Volume |
99 |
Issue |
13 |
Pages |
132512-132512,3 |
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
Abstract |
We report bipolar resistive switching between the interfaces of manganite nanocolumns. La0.7Sr0.3MnO3 films were prepared on Al2O3 substrates, where the films grow in nanocolumns from the substrate to the surface. Conductive atomic force microscopy directly detects that the resistive switching is located at the boundaries of the grains. Furthermore, mesoscopic transport measurements reveal a tunnel magnetoresistance. In combination with the resistive switching, this leads to a total of four different resistive states. |
|
Address |
|
|
Corporate Author |
|
Thesis |
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
Language |
|
Wos |
000295618000052 |
Publication Date |
2011-09-29 |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
ISSN |
0003-6951; |
ISBN ![sorted by ISBN field, ascending order (up)](img/sort_asc.gif) |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
Impact Factor |
3.411 |
Times cited |
10 |
Open Access |
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2011 IF: 3.844 |
|
Call Number |
UA @ lucian @ c:irua:91884 |
Serial |
2881 |
Permanent link to this record |