Records |
Author |
Schulze, A.; Hantschel, T.; Dathe, A.; Eyben, P.; Ke, X.; Vandervorst, W. |
Title |
Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects |
Type |
A1 Journal article |
Year |
2012 |
Publication |
Nanotechnology |
Abbreviated Journal |
Nanotechnology |
Volume |
23 |
Issue |
30 |
Pages |
305707 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
The fabrication and integration of low-resistance carbon nanotubes (CNTs) for interconnects in future integrated circuits requires characterization techniques providing structural and electrical information at the nanometer scale. In this paper we present a slice-and-view approach based on electrical atomic force microscopy. Material removal achieved by successive scanning using doped ultra-sharp full-diamond probes, manufactured in-house, enables us to acquire two-dimensional (2D) resistance maps originating from different depths (equivalently different CNT lengths) on CNT-based interconnects. Stacking and interpolating these 2D resistance maps results in a three-dimensional (3D) representation (tomogram). This allows insight from a structural (e.g. size, density, distribution, straightness) and electrical point of view simultaneously. By extracting the resistance evolution over the length of an individual CNT we derive quantitative information about the resistivity and the contact resistance between the CNT and bottom electrode. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Bristol |
Editor |
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Language |
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Wos |
000306333500029 |
Publication Date |
2012-07-11 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0957-4484;1361-6528; |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.44 |
Times cited |
29 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.44; 2012 IF: 3.842 |
Call Number |
UA @ lucian @ c:irua:100750 |
Serial |
895 |
Permanent link to this record |
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Author |
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Title |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
Type |
P1 Proceeding |
Year |
2001 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
359-360 |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Princeton University Press |
Place of Publication |
Princeton, N.J. |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1-58949-003-7 |
ISBN ![sorted by ISBN field, descending order (down)](img/sort_desc.gif) |
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Additional Links |
UA library record; WoS full record; |
Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:95736 |
Serial |
3176 |
Permanent link to this record |