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Clogging, diode and collective effects of skyrmions in funnel geometries”. Bellizotti Souza JC, Vizarim NP, Reichhardt CJO, Reichhardt C, Venegas PA, New journal of physics 24, 103030 (2022). http://doi.org/10.1088/1367-2630/AC9749
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High-throughput analysis of tetragonal transition metal Xenes”. Yorulmaz U, Šabani D, Yagmurcukardes M, Sevik C, Milošević, MV, Physical chemistry, chemical physics 24, 29406 (2022). http://doi.org/10.1039/D2CP04191J
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Wave-packet propagation in a graphene geometric diode”. Andelkovic M, Rakhimov KY, Chaves A, Berdiyorov GR, Milošević, MV, Physica. E: Low-dimensional systems and nanostructures 147, 115607 (2023). http://doi.org/10.1016/J.PHYSE.2022.115607
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Spontaneous skyrmion conformal lattice and transverse motion during dc and ac compression”. Bellizotti Souza JC, Vizarim NP, Reichhardt CJO, Reichhardt C, Venegas PA, New journal of physics 25, 053020 (2023). http://doi.org/10.1088/1367-2630/ACD46F
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Chlorinated phosphorene for energy application”. Hassani N, Yagmurcukardes M, Peeters FM, Neek-Amal M, Computational materials science 231, 112625 (2024). http://doi.org/10.1016/J.COMMATSCI.2023.112625
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Experimental and theoretical investigation of synthesis and properties of dodecanethiol-functionalized MoS₂”. Duran TA, Šabani D, Milošević, MV, Sahin H, Physical chemistry, chemical physics 25, 27141 (2023). http://doi.org/10.1039/D3CP02631K
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Interface thermal conductivities induced by van der Waals interactions”. Dong HM, Liang HP, Tao ZH, Duan YF, Milošević, MV, Chang K, Physical chemistry, chemical physics 26, 4047 (2024). http://doi.org/10.1039/D3CP05377F
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Observation of temperature induced phase transitions in TiO superconducting thin film via infrared measurement”. Zhou S, Zhang C, Xu W, Zhang J, Xiao Y, Ding L, Wen H, Cheng X, Hu C, Li H, Li X, Peeters FM, Infrared physics and technology 137, 105160 (2024). http://doi.org/10.1016/J.INFRARED.2024.105160
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Reduction-enhanced water flux through layered graphene oxide (GO) membranes stabilized with H3O+ and OH- ions”. Gogoi A, Neyts EC, Peeters FM, Physical chemistry, chemical physics 26, 10265 (2024). http://doi.org/10.1039/D3CP04097F
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Terahertz magneto-optical properties of Nitrogen-doped diamond”. Xiao H, Wen H, Xu W, Cheng Y, Zhang J, Cheng X, Xiao Y, Ding L, Li H, He B, Peeters FM, Infrared physics and technology 138, 105237 (2024). http://doi.org/10.1016/J.INFRARED.2024.105237
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Two new members of the covalent organic frameworks family : crystalline 2D-oxocarbon and 3D-borocarbon structures”. Hassani N, Movafegh-Ghadirli A, Mahdavifar Z, Peeters FM, Neek-Amal M, Computational materials science 241, 1 (2024). http://doi.org/10.1016/J.COMMATSCI.2024.113022
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A 2D model for a gliding arc discharge”. Kolev S, Bogaerts A, Plasma sources science and technology 24, 015025 (2015). http://doi.org/10.1088/0963-0252/24/1/015025
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Characterization of an Ar/O2 magnetron plasma by a multi-species Monte Carlo model”. Bultinck E, Bogaerts A, Plasma sources science and technology 20, 045013 (2011). http://doi.org/10.1088/0963-0252/20/4/045013
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Comprehensive modelling network for dc glow discharges in argon”. Bogaerts A, Plasma sources science and technology 8, 210 (1999). http://doi.org/10.1088/0963-0252/8/2/003
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Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition”. Tinck S, Bogaerts A, Plasma sources science and technology 20, 015008 (2011). http://doi.org/10.1088/0963-0252/20/1/015008
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Conversion of carbon dioxide to value-added chemicals in atmospheric pressure dielectric barrier discharges”. Paulussen S, Verheyde B, Tu X, De Bie C, Martens T, Petrovic D, Bogaerts A, Sels B, Plasma sources science and technology 19, 034015 (2010). http://doi.org/10.1088/0963-0252/19/3/034015
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Dielectric barrier discharges used for the conversion of greenhouse gases: modeling the plasma chemistry by fluid simulations”. De Bie C, Martens T, van Dijk J, Paulussen S, Verheyde B, Corthals S, Bogaerts A, Plasma sources science and technology 20, 024008 (2011). http://doi.org/10.1088/0963-0252/20/2/024008
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Dimension reduction of non-equilibrium plasma kinetic models using principal component analysis”. Peerenboom K, Parente A, Kozák T, Bogaerts A, Degrez G, Plasma sources science and technology 24, 025004 (2015). http://doi.org/10.1088/0963-0252/24/2/025004
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The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma”. Zhao S-X, Gao F, Wang Y-N, Bogaerts A, Plasma sources science and technology 21, 025008 (2012). http://doi.org/10.1088/0963-0252/21/2/025008
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Electron bounce resonance heating in dual-frequency capacitively coupled oxygen discharges”. Liu Y-X, Zhang Q-Z, Liu L, Song Y-H, Bogaerts A, Wang Y-N, Plasma sources science and technology 22, 025012 (2013). http://doi.org/10.1088/0963-0252/22/2/025012
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Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
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Electron energy distribution function in capacitively coupled RF discharges: differences between electropositive Ar and electronegative SiH4 discharges”. Yan M, Bogaerts A, Goedheer WJ, Gijbels R, Plasma sources science and technology 9, 583 (2000). http://doi.org/10.1088/0963-0252/9/4/314
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Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma : modeling and experimental investigation”. Van Laer K, Tinck S, Samara V, de Marneffe JF, Bogaerts A, Plasma sources science and technology 22, 025011 (2013). http://doi.org/10.1088/0963-0252/22/2/025011
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Evaluation of the energy efficiency of CO2 conversion in microwave discharges using a reaction kinetics model”. Kozák T, Bogaerts A, Plasma sources science and technology 24, 015024 (2015). http://doi.org/10.1088/0963-0252/24/1/015024
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Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma”. Zhao S-X, Gao F, Wang Y-N, Bogaerts A, Plasma sources science and technology 22, 015017 (2013). http://doi.org/10.1088/0963-0252/22/1/015017
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Heating mechanism in direct current superposed single-frequency and dual-frequency capacitively coupled plasmas”. Zhang Q-Z, Liu Y-X, Jiang W, Bogaerts A, Wang Y-N, Plasma sources science and technology 22, 025014 (2013). http://doi.org/10.1088/0963-0252/22/2/025014
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Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux”. Bogaerts A, Okhrimovskyy A, Baguer N, Gijbels R, Plasma sources science and technology 14, 191 (2005). http://doi.org/10.1088/0963-0252/14/1/021
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InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 60, 868 (1992). http://doi.org/10.1063/1.106490
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InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy”. Dobbelaere W, de Boeck J, Heremans P, Mertens R, Borghs G, Luyten W, van Landuyt J, Applied physics letters 600, 3256 (1992). http://doi.org/10.1063/1.106711
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The ion- and atom-induced secondary electron emission yield: numerical study for the effect of clean and dirty cathode surfaces”. Bogaerts A, Gijbels R, Plasma sources science and technology 11, 27 (2002). http://doi.org/10.1088/0963-0252/11/1/303
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