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Author Verberck, B.; Nikolaev, A.V.; Michel, K.H. doi  openurl
  Title Theoretical model for the structural phase transition and the metal-insulator transition in polymerized KC60 Type A1 Journal article
  Year 2004 Publication Fullerenes, nanotubes, and carbon nanostructures T2 – 6th Biennial International Workshop on Fullerenes and Atomic Clusters, JUN 30-JUL 04, 2003, St Petersburg, RUSSIA Abbreviated Journal Fuller Nanotub Car N  
  Volume 12 Issue 1-2 Pages 243-252  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract The recently discovered structural phase transition in Polymerized KC60 at about 50K leads to a doubling of the unit cell volume and is accompanied by a metal-insulator transition. Here, we show that the ((a) over right arrow + (c) over right arrow, (b) over right arrow, (a) over right arrow – (c) over right arrow) superstructure results from orientational charge density waves along the polymer chains and correlated displacements of the K+ ions. The presented model can also account for the metal-insulator transition. The effect is specific for the space group Pmnn of KC60 and is absent in both Rb- and CsC60 (space group 12/m), in agreement with the present experimental knowledge of these compounds.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000220551600040 Publication Date 2004-03-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1536-383X;1536-4046; ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.35 Times cited Open Access  
  Notes Approved Most recent IF: 1.35; 2004 IF: 1.117  
  Call Number UA @ lucian @ c:irua:103259 Serial 3607  
Permanent link to this record
 
 
Author Tarakina, N.V.; Verberck, B. doi  openurl
  Title Tubular fullerenes in carbon nanotubes Type A1 Journal article
  Year 2012 Publication Fullerenes, nanotubes, and carbon nanostructures Abbreviated Journal Fuller Nanotub Car N  
  Volume 20 Issue 4-7 Pages 538-542  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract We investigate the optimal orientations and positions of tubular fullerene molecules C-70, C-80 and C-90 encapsulated in single-walled carbon nanotubes (SWCNTs). We find that increasing the tube radius leads to the following succession of energetically stable regimes: 1) lying molecules positioned on the tube's long axis, 2) tilted molecules on the tube's long axis and 3) lying molecules shifted away from the tube's long axis. In the case of C-70 and C-80 molecules, standing on-axis configurations also occur. Our findings are relevant for the possible application of molecular-orientation-dependent electronic properties of fullerene nanopeapods.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000304297500045 Publication Date 2012-05-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1536-383X;1536-4046; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.35 Times cited Open Access  
  Notes ; This work was financially supported by the Research Foundation – Flanders (FWO-Vl). B. V. is a Postdoctoral Fellow of the Research Foundation-Flanders (FWO-Vl). ; Approved Most recent IF: 1.35; 2012 IF: 0.764  
  Call Number UA @ lucian @ c:irua:99004 Serial 3737  
Permanent link to this record
 
 
Author Soldatov, A.; Yalovega, G.; Smolentsev, G.; Kravtsova, A.; Lamoen, D.; Balasubramanian, C.; Marcelli, A.; Cinque, G.; Bellucci, S. doi  openurl
  Title ALN nanoparticles XANES analysis: local atomic and electronic structure Type A1 Journal article
  Year 2007 Publication Nuclear Instruments & Methods In Physics Research Section A-Accelerators Spectrometers Detectors And Associated Equipment Abbreviated Journal Nucl Instrum Meth A  
  Volume 575 Issue 1/2 Pages 85-87  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Amsterdam Editor  
  Language Wos 000247146600021 Publication Date 2007-01-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.362 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.362; 2007 IF: 1.114  
  Call Number UA @ lucian @ c:irua:64755 Serial 89  
Permanent link to this record
 
 
Author Idrissi, H.; Cordier, P.; Jacob, D.; Walte, N. doi  openurl
  Title Dislocations and plasticity of experimentally deformed coesite Type A1 Journal article
  Year 2008 Publication European journal of mineralogy Abbreviated Journal Eur J Mineral  
  Volume 20 Issue 4 Pages 665-671  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Dislocation microstructures have been characterized by transmission electron microscopy in polycrystalline coesite deformed experimentally at 4 GPa, 1200 degrees C. Burgers vectors have been determined by large-angle convergent-beam electron diffraction. Sample orientation was assisted by precession electron diffraction to overcome difficulties arising from pseudo-hexagonal symmetry. The results are explained by using a pseudo-hexagonal setting. We found that most dislocations observed are of the 1/3 < 2 (1) over bar(1) over bar0 > type. No clear glide plane was identified, suggesting that climb is activated under these conditions. This conclusion is supported by the observation of numerous subgrain boundaries. We have also observed some [00011 dislocations. Finally, the C12/cl space group to which coesite belongs being centred, an additional slip system is observed: 1/6[(1) over bar2 (1) over bar3](01 (1) over bar1) (1/2[(1) over bar 10](110) in the monoclinic setting).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stuttgart Editor  
  Language Wos 000262891900021 Publication Date 2008-08-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0935-1221; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.362 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.362; 2008 IF: 1.220  
  Call Number UA @ lucian @ c:irua:94604 Serial 733  
Permanent link to this record
 
 
Author Devouard, B.; Baronnet, A.; Van Tendeloo, G.; Amelinckx, S. openurl 
  Title First evidence of synthetic polygonal serpentines Type A1 Journal article
  Year 1997 Publication European journal of mineralogy Abbreviated Journal Eur J Mineral  
  Volume 9 Issue Pages 539-546  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stuttgart Editor  
  Language Wos A1997XB31400008 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0935-1221 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.362 Times cited 15 Open Access  
  Notes Approved Most recent IF: 1.362; 1997 IF: 1.099  
  Call Number UA @ lucian @ c:irua:21431 Serial 1198  
Permanent link to this record
 
 
Author Razdobarin, A.G.; Mukhin, E.E.; Semenov, V.V.; Yu.Tolstyakov, S.; Kochergin, M.M.; Kurskiev, G.S.; Podushnikova, K.A.; Kirilenko, D.A.; Sitnikova, A.A.; Gorodetsky, А.Е.; Bukhovets, V.L.; Zalavutdinov, R.K.; Zakharov, А.P.; Arkhipov, I.I.; Voitsenya, V.S.; Bondarenko, V.N.; Konovalov, V.G.; Ryzhkov, I.V.; pdf  doi
openurl 
  Title High reflective mirrors for in-vessel applications in ITER Type A1 Journal article
  Year 2010 Publication Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment Abbreviated Journal Nucl Instrum Meth A  
  Volume 623 Issue 2 Pages 809-811  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Science Place of Publication Amsterdam Editor  
  Language Wos 000284343600041 Publication Date 2010-04-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.362 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.362; 2010 IF: 1.142  
  Call Number UA @ lucian @ c:irua:95545 Serial 1442  
Permanent link to this record
 
 
Author Salbu, B.; Krekling, T.; Lind, O.C.; Oughton, D.H.; Drakopoulos, M.; Simionovici, A.S.; Snigireva, I.; Snigirev, A.; Weitkamp, T.; Adams, F.; Janssens, K.; Kashparov, V.A. doi  openurl
  Title High energy X-ray microscopy for characterisation of fuel particles Type A1 Journal article
  Year 2001 Publication Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment Abbreviated Journal Nucl Instrum Meth A  
  Volume 467 Issue 68 Pages 1249-1252  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000171012800101 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.362 Times cited Open Access  
  Notes Approved Most recent IF: 1.362; 2001 IF: 1.026  
  Call Number UA @ admin @ c:irua:34696 Serial 5639  
Permanent link to this record
 
 
Author Dubourdieu, C.; Rauwel, E.; Roussel, H.; Ducroquet, F.; Hollaender, B.; Rossell, M.; Van Tendeloo, G.; Lhostis, S.; Rushworth, S. pdf  doi
openurl 
  Title Addition of yttrium into HfO2 films: microstructure and electrical properties Type A1 Journal article
  Year 2009 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 27 Issue 3 Pages 503-514  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 °C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity r as a function of Y content was determined. It exhibits a maximum of ~30 for ~8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 °C under NH3.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000265739100016 Publication Date 2009-05-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 29 Open Access  
  Notes Approved Most recent IF: 1.374; 2009 IF: 1.297  
  Call Number UA @ lucian @ c:irua:77054 Serial 58  
Permanent link to this record
 
 
Author Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. pdf  doi
openurl 
  Title Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Type A1 Journal article
  Year 1999 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 17 Issue 1 Pages 249-255  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000078136300038 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.374; 1999 IF: 1.742  
  Call Number UA @ lucian @ c:irua:29689 Serial 581  
Permanent link to this record
 
 
Author Liu, Y.-X.; Zhang, Y.-R.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Electromagnetic effects in high-frequency large-area capacitive discharges : a review Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 020801  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In traditional capacitively coupled plasmas, the discharge can be described by an electrostatic model, in which the Poisson equation is employed to determine the electrostatic electric field. However, current plasma reactors are much larger and driven at a much higher frequency. If the excitation wavelength k in the plasma becomes comparable to the electrode radius, and the plasma skin depth d becomes comparable to the electrode spacing, the electromagnetic (EM) effects will become significant and compromise the plasma uniformity. In this regime, capacitive discharges have to be described by an EM model, i.e., the full set of Maxwells equations should be solved to address the EM effects. This paper gives an overview of the theory, simulation and experiments that have recently been carried out to understand these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel display industries. Furthermore, some methods for improving the plasma uniformity are also described and compared.  
  Address  
  Corporate Author Thesis  
  Publisher A v s amer inst physics Place of Publication Melville Editor  
  Language Wos 000355739500007 Publication Date 2015-02-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:123541 Serial 903  
Permanent link to this record
 
 
Author Zhang, Y.-R.; Gao, F.; Li, X.-C.; Bogaerts, A.; Wang, Y.-N. url  doi
openurl 
  Title Fluid simulation of the bias effect in inductive/capacitive discharges Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 061303  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000365503800020 Publication Date 2015-08-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:126824 Serial 1229  
Permanent link to this record
 
 
Author Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R. doi  openurl
  Title Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment Type A1 Journal article
  Year 1998 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 16 Issue 4 Pages 2400-2410  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000074852700061 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 12 Open Access  
  Notes Approved Most recent IF: 1.374; 1998 IF: 1.612  
  Call Number UA @ lucian @ c:irua:24124 Serial 1634  
Permanent link to this record
 
 
Author Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A. url  doi
openurl 
  Title Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 021310  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A two-dimensional hybrid Monte Carlofluid model, incorporating a full-wave solution of Maxwell's equations, is employed to describe the behavior of high frequency (HF) and very high frequency capacitively coupled plasmas (CCPs), operating both at single frequency (SF) and dual frequency (DF) in a CF4/O2 gas mixture. First, the authors investigate the plasma composition, and the simulations reveal that besides CF4 and O2, also COF2, CF3, and CO2 are important neutral species, and CF+3 and F− are the most important positive and negative ions. Second, by comparing the results of the model with and without taking into account the electromagnetic effects for a SF CCP, it is clear that the electromagnetic effects are important, both at 27 and 60 MHz, because they affect the absolute values of the calculation results and also (to some extent) the spatial profiles, which accordingly affects the uniformity in plasma processing. In order to improve the plasma radial uniformity, which is important for the etch process, a low frequency (LF) source is added to the discharge. Therefore, in the major part of the paper, the plasma uniformity is investigated for both SF and DF CCPs, operating at a HF of 27 and 60 MHz and a LF of 2 MHz. For this purpose, the authors measure the etch rates as a function of position on the wafer in a wide range of LF powers, and the authors compare them with the calculated fluxes toward the wafer of the plasma species playing a role in the etch process, to explain the trends in the measured etch rate profiles. It is found that at a HF of 60 MHz, the uniformity of the etch rate is effectively improved by adding a LF power of 2 MHz and 300 W, while its absolute value increases by about 50%, thus a high etch rate with a uniform distribution is observed under this condition.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000355739500026 Publication Date 2015-01-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:122650 Serial 2107  
Permanent link to this record
 
 
Author Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R. doi  openurl
  Title Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Type A1 Journal article
  Year 2004 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 22 Issue 4 Pages 1524-1529  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000223322000075 Publication Date 2004-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 13 Open Access  
  Notes Approved Most recent IF: 1.374; 2004 IF: 1.557  
  Call Number UA @ lucian @ c:irua:47331 Serial 2137  
Permanent link to this record
 
 
Author Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. doi  openurl
  Title Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates Type A1 Journal article
  Year 2012 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 30 Issue 1 Pages 01a127-01a127,10  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090]  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000298992800027 Publication Date 2011-12-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 41 Open Access  
  Notes Approved Most recent IF: 1.374; 2012 IF: 1.432  
  Call Number UA @ lucian @ c:irua:96253 Serial 2818  
Permanent link to this record
 
 
Author Heyne, M.H.; de Marneffe, J.-F.; Radu, I.; Neyts, E.C.; De Gendt, S. pdf  doi
openurl 
  Title Thermal recrystallization of short-range ordered WS2 films Type A1 Journal article
  Year 2018 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 36 Issue 5 Pages 05g501  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The integration of van der Waals materials in nanoelectronic devices requires the deposition of few-layered MX2 films with excellent quality crystals covering a large area. In recent years, astonishing progress in the monolayer growth of WS2 and MoS2 was demonstrated, but multilayer growth resulted often in separated triangular or hexagonal islands. These polycrystalline films cannot fully employ the specific MX2 properties since they are not connected in-plane to the other domains. To coalesce separated islands, ultrahigh-temperature postdeposition anneals in H2S are applied, which are not compatible with bare silicon substrates. Starting from the deposition of stoichiometric short-ordered films, the present work studies different options for subsequent high-temperature annealing in an inert atmosphere to form crystalline films with large grains from stoichiometric films with small grains. The rapid thermal annealing, performed over a few seconds, is compared to excimer laser annealing in the nanosecond range, which are both able to crystallize the thin WS2. The WS2 recrystallization temperature can be lowered using metallic crystallization promoters (Co and Ni). The best result is obtained using a Co cap, due to the circumvention of Co and S binary phase formation below the eutectic temperature. The recrystallization above a critical temperature is accompanied by sulfur loss and 3D regrowth. These undesired effects can be suppressed by the application of a dielectric capping layer prior to annealing. A SiO2 cap can suppress the sulfur loss successfully during annealing and reveals improved material quality in comparison to noncapped films Published by the AVS.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000444033200002 Publication Date 2018-07-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 2 Open Access Not_Open_Access  
  Notes Approved Most recent IF: 1.374  
  Call Number UA @ lucian @ c:irua:153671 Serial 5134  
Permanent link to this record
 
 
Author Cremers, V.; Rampelberg, G.; Baert, K.; Abrahami, S.; Claes, N.; de Oliveira, T.M.; Terryn, H.; Bals, S.; Dendooven, J.; Detavernier, C. pdf  url
doi  openurl
  Title Corrosion protection of Cu by atomic layer deposition Type A1 Journal article
  Year 2019 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 37 Issue 37 Pages 060902  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Atomic layer deposition (ALD) is a vapor phase technique that is able to deposit uniform, conformal thin films with an excellent thickness control at the atomic scale. 18 nm thick Al2O3 and TiO2 coatings were deposited conformaly and pinhole-free onto micrometer-sized Cu powder, using trimethylaluminum and tetrakis(dimethylamido)titanium(IV), respectively, as a precursor and de-ionized water as a reactant. The capability of the ALD coating to protect the Cu powder against corrosion was investigated. Therefore, the stability of the coatings was studied in solutions with different pH in the range of 0–14, and in situ raman spectroscopy was used to detect the emergence of corrosion products of Cu as an indication that the protective coating starts to fail. Both ALD coatings provide good protection at standard pH values in the range of 5–7. In general, the TiO2 coating shows a better barrier protection against corrosion than the Al2O3 coating. However, for the most extreme pH conditions, pH 0 and pH 14, the TiO2 coating starts also to degrade.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000517925800003 Publication Date 2019-09-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 7 Open Access OpenAccess  
  Notes The authors acknowledge financial support from the Strategic Initiative Materials in Flanders (SIM, SBO-FUNC project) and the Special Research Fund BOF of Ghent University (No. GOA 01G01513). J.D. acknowledges the Research Foundation Flanders (FWO-Vlaanderen) for a postdoctoral fellowship. Approved Most recent IF: 1.374  
  Call Number EMAT @ emat @c:irua:162640 Serial 5361  
Permanent link to this record
 
 
Author Deng, S.; Verbruggen, S.W.; Lenaerts, S.; Martens, J.A.; Van den Berghe, S.; Devloo-Casier, K.; Devulder, W.; Dendoover, J.; Deduytsche, D.; Detavernier, C. doi  openurl
  Title Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing Type A1 Journal article
  Year 2014 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 32 Issue 1 Pages 01a123  
  Keywords A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)  
  Abstract In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000335847600023 Publication Date 2013-12-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.374 Times cited 10 Open Access  
  Notes ; The authors wish to thank the Research Foundation-Flanders (FWO) for financial support. The authors acknowledge the European Research Council for funding under the European Union's Seventh Framework Programme (FP7/2007-2013)/ERC grant agreement Nos. 239865-COCOON and 246791-COUNTATO. The authors also acknowledge the support from UGENT-GOA-01G01513 and IWT-SBO SOSLion. J.A.M. acknowledges the Flemish government for long-term structural funding (Methusalem). J.D. acknowledges the Flemisch FWO for a postdoctoral fellowship. ; Approved Most recent IF: 1.374; 2014 IF: 2.322  
  Call Number UA @ admin @ c:irua:117296 Serial 5936  
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R.; Goedheer, W. doi  openurl
  Title Hybrid modeling of a capacitively coupled radio frequency glow discharge in argon: combined Monte Carlo and fluid model Type A1 Journal article
  Year 1999 Publication Japanese journal of applied physics Abbreviated Journal Jpn J Appl Phys  
  Volume 38 Issue Pages 4404-4415  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Kyoto Editor  
  Language Wos 000082871400032 Publication Date 2002-10-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-4922;1347-4065; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.384 Times cited 45 Open Access  
  Notes Approved Most recent IF: 1.384; 1999 IF: 1.411  
  Call Number UA @ lucian @ c:irua:24922 Serial 1523  
Permanent link to this record
 
 
Author Vereecke, B.; van der Veen, M.H.; Sugiura, M.; Kashiwagi, Y.; Ke, X.; Cott, D.J.; Hantschel, T.; Huyghebaert, C.; Tökei, Z. pdf  doi
openurl 
  Title Wafer-level electrical evaluation of vertical carbon nanotube bundles as a function of growth temperature Type A1 Journal article
  Year 2013 Publication Japanese journal of applied physics Abbreviated Journal Jpn J Appl Phys  
  Volume 52 Issue 42 Pages 04cn02-5  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We have evaluated the resistance of carbon nanotubes (CNTs) grown at a CMOS-compatible temperature using a realistic integration scheme. The structural analysis of the CNTs by transmission electron microscopy (TEM) showed that the degree of graphitization decreased significantly when the growth temperature was decreased from 540 to 400 °C. The CNTs were integrated to form 150-nm-diameter vertical interconnects between a TiN layer and Cu metal trenches on 200 mm full wafers. Wafers with CNTs grown at low temperature were found to have a lower single-contact resistance than those produced at high temperatures. Thickness measurements showed that the low contact resistance is a result of small contact height. This height dependence is masking the impact of CNT graphitization quality on resistance. When benchmarking our results with data from the literature, a relationship between resistivity and growth temperature cannot be found for CNT-based vertical interconnects.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Kyoto Editor  
  Language Wos 000320002400150 Publication Date 2013-03-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-4922;1347-4065; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.384 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.384; 2013 IF: 1.057  
  Call Number UA @ lucian @ c:irua:108713 Serial 3902  
Permanent link to this record
 
 
Author Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. pdf  url
doi  openurl
  Title Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Type A1 Journal article
  Year 2017 Publication Japanese journal of applied physics Abbreviated Journal Jpn J Appl Phys  
  Volume 56 Issue 56 Pages 06HA02  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000425887900001 Publication Date 2017-06-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-4922 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.384 Times cited 18 Open Access OpenAccess  
  Notes The authors would like to thank Drs. Masanobu Honda, Miyako Matsui, Tomohiro Okumura, Tetsuya Tatsumi, Satoshi Hamaguchi, Hiroto Ohtake, Yoshinobu Ohya, Kazunori Shinoda, Masaru Izawa, Hisataka Hayashi, Toshio Hayashi, Makoto Sekine, and Masaru Hori, and all members of the Program and Publication Committee of the 38th International Symposium on Dry Process 2016 held in Sapporo, Japan, as well as Nicholas Altieri and Jeffrey Chang at UCLA for proofreading and providing feedback on the manuscript. Approved Most recent IF: 1.384  
  Call Number PLASMANT @ plasmant @ c:irua:143872 Serial 4576  
Permanent link to this record
 
 
Author de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. doi  openurl
  Title A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon Type A1 Journal article
  Year 2003 Publication Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK Abbreviated Journal Physica B  
  Volume 340 Issue Pages 1013-1017  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000188300200213 Publication Date 2003-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.386; 2003 IF: 0.908  
  Call Number UA @ lucian @ c:irua:103784 Serial 25  
Permanent link to this record
 
 
Author Sudheendra, L.; Moshnyaga, V.; Lebedev, O.I.; Gehrke, K.; Belenciuc, A.; Shapoval, O.; Van Tendeloo, G.; Samwer, K. pdf  doi
openurl 
  Title A-site ordering and stripe phases in manganite films Type A1 Journal article
  Year 2008 Publication Physica: B : condensed matter T2 – International Conference on Strongly Correlated Electron Systems (SCES, 2007), MAY 13-18, 2007, Houston, TX Abbreviated Journal Physica B  
  Volume 403 Issue 5-9 Pages 1645-1646  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Insulating and metallic stripes above and below the Curie temperature, T-C, respectively, were observed by a high-resolution scanning tunneling microscopy (STM) and/or spectroscopy (STS) in A-site ordered and macroscopically strain free epitaxial La0.75Ca0.25MnO3 film grown on MgO substrate. The “insulating” stripes were found to be incommensurable to the lattice and aligned along (110) direction. Metallic stripes were commensurable with periodicity 2a(p)similar to 0.8 nm and aligned parallel to the crystallographic a/b-axis. Formation of these stripes involves competing charge, orbital, and lattice orders and is an outcome of an overlapping of electron wave functions mediated by the local lattice-strain distribution, existed even in A-site ordered film due to the difference in cation radii of La and Ca. (C) 2007 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000254689900330 Publication Date 2007-11-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.386 Times cited Open Access  
  Notes Approved Most recent IF: 1.386; 2008 IF: 0.822  
  Call Number UA @ lucian @ c:irua:104031 Serial 26  
Permanent link to this record
 
 
Author Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. doi  openurl
  Title An envelope function formalism for lattice-matched heterostructures Type A1 Journal article
  Year 2015 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 470-471 Issue 470-471 Pages 69-75  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The envelope function method traditionally employs a single basis set which, in practice, relates to a single material because the k.p matrix elements are generally only known in a particular basis. In this work, we defined a basis function transformation to alleviate this restriction. The transformation is completely described by the known inter-band momentum matrix elements. The resulting envelope function equation can solve the electronic structure in lattice matched heterostructures without resorting to boundary conditions at the interface between materials, while all unit-cell averaged observables can be calculated as with the standard envelope function formalism. In the case of two coupled bands, this heterostructure formalism is equivalent to the standard formalism while taking position dependent matrix elements. (C) 2015 Elsevier B.V. All rights reserved  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000355149600011 Publication Date 2015-04-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 5 Open Access  
  Notes ; ; Approved Most recent IF: 1.386; 2015 IF: 1.319  
  Call Number c:irua:126397 Serial 95  
Permanent link to this record
 
 
Author de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. pdf  doi
openurl 
  Title Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Type A1 Journal article
  Year 2001 Publication Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY Abbreviated Journal Physica B  
  Volume 308 Issue Pages 294-297  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000173660100073 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.386; 2001 IF: 0.663  
  Call Number UA @ lucian @ c:irua:103389 Serial 345  
Permanent link to this record
 
 
Author Wang, Y.J.; Jiang, Z.X.; McCombe, B.D.; Peeters, F.M.; Wu, X.G.; Hai, G.Q.; Eusfis, T.J.; Schaff, W. doi  openurl
  Title High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures Type A1 Journal article
  Year 1998 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 256/258 Issue Pages 215-219  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000077775900059 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.386; 1998 IF: 0.619  
  Call Number UA @ lucian @ c:irua:24179 Serial 1427  
Permanent link to this record
 
 
Author Badalyan, S.M.; Peeters, F.M. pdf  doi
openurl 
  Title Joule heat in a two-dimensional electron gas exposed to a normal non-homogeneous magnetic field of a 'chess' configuration Type A1 Journal article
  Year 2002 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 316 Issue Pages 216-218  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We have calculated analytically the spatial distribution of the electric field and current density, and obtained the Joule heat generation rate in a two-dimensional electron gas (2DEG) subjected to a non-homogeneous magnetic field of a 'chess' configuration. The generation of the Joule heat from the 2DEG is mainly concentrated near the singular corners of each 'chess' field and tends to zero in other corners. (C) 2002 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000176297400047 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 1.386 Times cited Open Access  
  Notes Approved Most recent IF: 1.386; 2002 IF: 0.609  
  Call Number UA @ lucian @ c:irua:94925 Serial 1753  
Permanent link to this record
 
 
Author Janssens, K.L.; Peeters, F.M.; Schweigert, V.A.; Partoens, B. doi  openurl
  Title Magnetic field dependence of the xciton energy in type I and type II quantum disks Type A1 Journal article
  Year 2001 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 298 Issue Pages 277-281  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000168992800057 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.386; 2001 IF: 0.663  
  Call Number UA @ lucian @ c:irua:34351 Serial 1873  
Permanent link to this record
 
 
Author Geim, A.K.; Grigorieva, I.V.; Dubonos, S.V.; Lok, J.G.S.; Maan, J.C.; Filippov, A.E.; Peeters, F.M.; Deo, P.S. openurl 
  Title Mesoscopic superconductors as 'artificial atoms' made from Cooper pairs Type A1 Journal article
  Year 1998 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 249/251 Issue Pages 445-452  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000074919400095 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.386; 1998 IF: 0.619  
  Call Number UA @ lucian @ c:irua:24180 Serial 2003  
Permanent link to this record
 
 
Author Nicholas, R.J.; Lakrimi, M.; Khym, S.W.; Mason, N.J.; Poulter, A.J.L.; Vaughan, T.; Walker, P.J.; Maude, D.K.; Portal, J.C.; Symons, D.M.; Peeters, F.M. doi  openurl
  Title Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures Type A1 Journal article
  Year 1998 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 256/258 Issue Pages 207-214  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000077775900042 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 1.386 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.386; 1998 IF: 0.619  
  Call Number UA @ lucian @ c:irua:24178 Serial 2086  
Permanent link to this record
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