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“The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 57
DOI: 10.1063/1.2008361
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“Site-specific mapping of transition metal oxygen coordination in complex oxides”. Turner S, Egoavil R, Batuk M, Abakumov AA, Hadermann J, Verbeeck J, Van Tendeloo G, Applied physics letters 101, 241910 (2012). http://doi.org/10.1063/1.4770512
Abstract: We demonstrate site-specific mapping of the oxygen coordination number for transition metals in complex oxides using atomically resolved electron energy-loss spectroscopy in an aberration-corrected scanning transmission electron microscope. Pb2Sr2Bi2Fe6O16 contains iron with a constant Fe3+ valency in both octahedral and tetragonal pyramidal coordination and is selected to demonstrate the principle of site-specific coordination mapping. Analysis of the site-specific Fe-L2,3 data reveals distinct variations in the fine structure that are attributed to Fe in a six-fold (octahedron) or five-fold (distorted tetragonal pyramid) oxygen coordination. Using these variations, atomic resolution coordination maps are generated that are in excellent agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4770512
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“Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition”. Rauwel E, Dubourdieu C, Holländer B, Rochat N, Ducroquet F, Rossell MD, Van Tendeloo G, Pelissier B, Applied physics letters 89, 012902 (2006). http://doi.org/10.1063/1.2216102
Abstract: Addition of yttrium in HfO(2) thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO(2) is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH(3). (c) 2006 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 78
DOI: 10.1063/1.2216102
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“Statistical method for thickness measurement of amorphous objects”. van Dyck D, Croitoru MD, Applied physics letters 90, 241911 (2007). http://doi.org/10.1063/1.2749184
Abstract: The authors propose a nondestructive method for the determination of the thickness of an amorphous sample. This method is based on the statistics of the phase of the electron exit wave function, which depend on the number of atoms traversed by the incident electron which itself is a function of the thickness of the object. The accuracy of this method has been checked numerically by the multislice method and compared with that based on the mean inner potential. (c) 2007 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 4
DOI: 10.1063/1.2749184
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“Strain relaxation and oxygen superstructure modulation in epitaxial Sr4Fe6O13\pm\delta films”. Santiso J, Pardo JA, Solis C, Garcia G, Figueras A, Rossell MD, Van Tendeloo G, Applied physics letters 86, 132105 (2005). http://doi.org/10.1063/1.1886264
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.1886264
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“Superconducting single-phase Sr1-xLaxCuO2 thin films with improved crystallinity grown by pulsed laser deposition”. Leca V, Blank DHA, Rijnders G, Bals S, Van Tendeloo G, Applied physics letters 89 (2006). http://doi.org/10.1063/1.2339840
Abstract: Sr1-xLaxCuO2-delta (x=0.10-0.20) thin films exhibiting an oxygen-deficient 2 root 2a(p)x2 root a(p) x c structure (a(p) and c represent the cell parameters of the perovskite subcell) were epitaxially grown by means of pulsed laser deposition in low-pressure oxygen ambient. (001) KTaO3 and (001) SrTiO3 single crystals were used as substrates, with BaTiO3 as buffer layer. The Sr1-xLaxCuO2-delta films were oxidized during cooling down in order to yield the infinite-layer-type structure. By applying this method, high quality single-phase Sr1-xLaxCuO2 thin films could be obtained for 0.10 <= x <= 0.175 doping range. The films grown on BaTiO3/KTaO3 show superconductivity for 0.15 <= x <= 0.175 with optimum doping at x=0.15, in contrast with previously reported data. (c) 2006 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.2339840
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“Symmetry and electronic states of Mn2+ in ZnS nanowires with mixed hexagonal and cubic stacking”. Chen L, Kirilenko D, Stesmans A, Nguyen XS, Binnemans K, Goderis B, Vanacken J, Lebedev O, Van Tendeloo G, Moshchalkov VV, Applied physics letters 97, 041918 (2010). http://doi.org/10.1063/1.3475017
Abstract: Electron spin resonance and electronic spectroscopy techniques were used to study the symmetry and electronic structure of Mn2+ dopants in solvothermally synthesized ZnS nanowires. The average diameter of ∼ 5 nm leads to the observable quantum confinement effects in the photoluminescence excitation spectra. The results clearly demonstrate the three symmetry locations of Mn2+ incorporation. Together with the inferred Mn2+ center densities, these data indicate a much higher efficiency of Mn2+ substitution in the nanowire sample with about two times larger diameter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.3475017
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“Fe3O4/ZnO : a high-quality magnetic oxide-semiconductor heterostructure by reactive deposition”. Paul M, Kufer D, Müller A, Brück S, Goering E, Kamp M, Verbeeck J, Tian H, Van Tendeloo G, Ingle NJC, Sing M, Claessen R, Applied physics letters 98, 012512 (2011). http://doi.org/10.1063/1.3540653
Abstract: We demonstrate the epitaxial growth of Fe<sub>3</sub>O<sub>4</sub> films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 27
DOI: 10.1063/1.3540653
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“Three-dimensional fabrication and characterisation of core-shell nano-columns using electron beam patterning of Ge-doped SiO2”. Gontard LC, Jinschek JR, Ou H, Verbeeck J, Dunin-Borkowski RE, Applied physics letters 100, 263113 (2012). http://doi.org/10.1063/1.4731765
Abstract: A focused electron beam in a scanning transmission electron microscope (STEM) is used to create arrays of core-shell structures in a specimen of amorphous SiO2 doped with Ge. The same electron microscope is then used to measure the changes that occurred in the specimen in three dimensions using electron tomography. The results show that transformations in insulators that have been subjected to intense irradiation using charged particles can be studied directly in three dimensions. The fabricated structures include core-shell nano-columns, sputtered regions, voids, and clusters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731765]
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 11
DOI: 10.1063/1.4731765
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“Transmission electron microscopy and electron energy-loss spectroscopy analysis of manganese oxide nanowires”. Du GH, Yuan ZY, Van Tendeloo G, Applied physics letters 86 (2005). http://doi.org/10.1063/1.1861963
Abstract: Single-crystalline MnOOH and Mn3O4 nanowires have been prepared by hydrothermal treatment of commercial bulky manganese oxide particles. beta-MnO2 and alpha-Mn2O3 nanowires were prepared by calcination of MnOOH nanowires. Transmission electron microscopy analysis demonstrates that MnOOH nanowires grow directly from MnO2 raw particles. The diameter of the nanowires is 20-70 nm, while the length can reach several micrometers. MnOOH nanowires grow preferentially along the [010] direction and Mn3O4 nanowires prefer to grow along the [001] direction; the long dimension of both beta-MnO2 and alpha-Mn2O3 nanowires is along [001]. Electron energy-loss spectroscopy analysis shows that the position of the prepeak of the oxygen K edge shifts to higher energy and the energy separation between the two main peaks of the oxygen K edge decreases with decreasing manganese oxidation state. The manganese-white-line ratios (L-3/L-2) were calculated. (C) 2005 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 46
DOI: 10.1063/1.1861963
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“Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films?”.Bals S, Van Tendeloo G, Salluzzo M, Maggio-Aprile I, Applied physics letters 79, 3660 (2001). http://doi.org/10.1063/1.1421622
Abstract: High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.1421622
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“Development of a fast electromagnetic beam blanker for compressed sensing in scanning transmission electron microscopy”. Béché, A, Goris B, Freitag B, Verbeeck J, Applied physics letters 108, 093103 (2016). http://doi.org/10.1063/1.4943086
Abstract: The concept of compressed sensing was recently proposed to significantly reduce the electron dose in scanning transmission electron microscopy (STEM) while still maintaining the main features in the image. Here, an experimental setup based on an electromagnetic beam blanker placed in the condenser plane of a STEM is proposed. The beam blanker deflects the beam with a random pattern, while the scanning coils are moving the beam in the usual scan pattern. Experimental images at both the medium scale and high resolution are acquired and reconstructed based on a discrete cosine algorithm. The obtained results confirm that compressed sensing is highly attractive to limit beam damage in experimental STEM even though some remaining artifacts need to be resolved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 40
DOI: 10.1063/1.4943086
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“Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond”. Balasubramaniam Y, Pobedinskas P, Janssens SD, Sakr G, Jomard F, Turner S, Lu YG, Dexters W, Soltani A, Verbeeck J, Barjon J, Nesládek M, Haenen K;, Applied physics letters 109, 062105 (2016). http://doi.org/10.1063/1.4960970
Abstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4960970
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“Towards rapid nanoscale measurement of strain in III-nitride heterostructures”. Jones E, Cooper D, Rouvière J-L, Béché, A, Azize M, Palacios T, Gradecak S, Applied Physics Letters 103, 231904 (2013). http://doi.org/10.1063/1.4838617
Abstract: We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 6
DOI: 10.1063/1.4838617
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“Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography”. Cooper D, Rouvière J-L, Béché, A, Kadkhodazadeh S, Semenova ES, Dunin-Borkowsk R, Applied physics letters 99, 261911 (2011). http://doi.org/10.1063/1.3672194
Abstract: The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 26
DOI: 10.1063/1.3672194
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“Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy”. Cooper D, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 100, 233121 (2012). http://doi.org/10.1063/1.4723572
Abstract: The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
DOI: 10.1063/1.4723572
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“Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy”. Cooper D, Denneulin T, Barnes J-P, Hartmann J-M, Hutin L, Le Royer C, Béché, A, Rouvière J-L, Applied Physics Letters 112, 124505 (2012). http://doi.org/10.1063/1.4767925
Abstract: Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 14
DOI: 10.1063/1.4767925
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“Improved strain precision with high spatial resolution using nanobeam precession electron diffraction”. Rouvière J-L, Béché, A, Martin Y, Denneulin T, Cooper D, Applied physics letters 103, 241913 (2013). http://doi.org/10.1063/1.4829154
Abstract: NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 53
DOI: 10.1063/1.4829154
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“Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs”. Zhou Y, Ramaneti R, Anaya J, Korneychuk S, Derluyn J, Sun H, Pomeroy J, Verbeeck J, Haenen K, Kuball M, Applied physics letters 111, 041901 (2017). http://doi.org/10.1063/1.4995407
Abstract: Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 78
DOI: 10.1063/1.4995407
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“Spectroscopic coincidence experiments in transmission electron microscopy”. Jannis D, Müller-Caspary K, Béché, A, Oelsner A, Verbeeck J, Applied physics letters 114, 143101 (2019). http://doi.org/10.1063/1.5092945
Abstract: We demonstrate the feasibility of coincidence measurements on a conventional transmission electron microscope, revealing the temporal
correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a
delay line detector with ps-range time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between both
events, related to the excitation and deexcitation of atoms in a crystal, provides added information not present in the individual EELS or
EDX spectra. In particular, the method provides EELS with a significantly suppressed or even removed background, overcoming the many
difficulties with conventional parametric background fitting as it uses no assumptions on the shape of the background, requires no user input
and does not suffer from counting noise originating from the background signal. This is highly attractive, especially when low concentrations
of elements need to be detected in a matrix of other elements.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 18
DOI: 10.1063/1.5092945
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“Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping”. Guzzinati G, Ghielens W, Mahr C, Béché, A, Rosenauer A, Calders T, Verbeeck J, Applied physics letters 114, 243501 (2019). http://doi.org/10.1063/1.5096245
Abstract: Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with a very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with a subnanometer resolution. Here, we present a method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than 2.5 × 10−4 and an accuracy of 1.5 × 10−3, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.
Keywords: A1 Journal article; ADReM Data Lab (ADReM); Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 17
DOI: 10.1063/1.5096245
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“Carbon nanotube TiO2 hybrid films for detecting traces of O2”. Llobet E, Espinosa EH, Sotter E, Ionescu R, Vilanova X, Torres J, Felten A, Pireaux JJ, Ke X, Van Tendeloo G, Renaux F, Paint Y, Hecq M, Bittencourt C;, Nanotechnology 19, 375501 (2008). http://doi.org/10.1088/0957-4484/19/37/375501
Abstract: Hybrid titania films have been prepared using an adapted sol-gel method for obtaining well-dispersed hydrogen plasma-treated multiwall carbon nanotubes in either pure titania or Nb-doped titania. The drop-coating method has been used to fabricate resistive oxygen sensors based on titania or on titania and carbon nanotube hybrids. Morphology and composition studies have revealed that the dispersion of low amounts of carbon nanotubes within the titania matrix does not significantly alter its crystallization behaviour. The gas sensitivity studies performed on the different samples have shown that the hybrid layers based on titania and carbon nanotubes possess an unprecedented responsiveness towards oxygen (i.e. more than four times higher than that shown by optimized Nb-doped TiO(2) films). Furthermore, hybrid sensors containing carbon nanotubes respond at significantly lower operating temperatures than their non-hybrid counterparts. These new hybrid sensors show a strong potential for monitoring traces of oxygen (i.e. <= 10 ppm) in a flow of CO(2), which is of interest for the beverage industry.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 48
DOI: 10.1088/0957-4484/19/37/375501
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“CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions”. Robin I-C, Aichele T, Bougerol C, André, R, Tatarenko S, Bellet-Amalric E, van Daele B, Van Tendeloo G, Nanotechnology 18, 265701 (2007). http://doi.org/10.1088/0957-4484/18/26/265701
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 8
DOI: 10.1088/0957-4484/18/26/265701
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“Controllable synthesis of novel one-dimensional carbon nanomaterials on an alkali-element-modified Cu catalyst”. Tao XY, Zhang XB, Cheng J-P, Liu F, Li Y, Van Tendeloo G, Nanotechnology 17, 224 (2006). http://doi.org/10.1088/0957-4484/17/1/037
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 4
DOI: 10.1088/0957-4484/17/1/037
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“Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals”. Ray S, Kolen'ko YV, Kovnir KA, Lebedev OI, Turner S, Chakraborty T, Erni R, Watanabe T, Van Tendeloo G, Yoshimura M, Itoh M, Nanotechnology 23, 025702 (2012). http://doi.org/10.1088/0957-4484/23/2/025702
Abstract: Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}\mathrm {(O)}
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 19
DOI: 10.1088/0957-4484/23/2/025702
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“Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects”. Schulze A, Hantschel T, Dathe A, Eyben P, Ke X, Vandervorst W, Nanotechnology 23, 305707 (2012). http://doi.org/10.1088/0957-4484/23/30/305707
Abstract: The fabrication and integration of low-resistance carbon nanotubes (CNTs) for interconnects in future integrated circuits requires characterization techniques providing structural and electrical information at the nanometer scale. In this paper we present a slice-and-view approach based on electrical atomic force microscopy. Material removal achieved by successive scanning using doped ultra-sharp full-diamond probes, manufactured in-house, enables us to acquire two-dimensional (2D) resistance maps originating from different depths (equivalently different CNT lengths) on CNT-based interconnects. Stacking and interpolating these 2D resistance maps results in a three-dimensional (3D) representation (tomogram). This allows insight from a structural (e.g. size, density, distribution, straightness) and electrical point of view simultaneously. By extracting the resistance evolution over the length of an individual CNT we derive quantitative information about the resistivity and the contact resistance between the CNT and bottom electrode.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 29
DOI: 10.1088/0957-4484/23/30/305707
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“Monodisperse spherical mesoporous silica particles : fast synthesis procedure and fabrication of photonic-crystal films”. Trofimova EY, Kurdyukov DA, Yakovlev SA, Kirilenko DA, Kukushkina YA, Nashchekin AV, Sitnikova AA, Yagovkina MA, Golubev VG, Nanotechnology 24, 155601 (2013). http://doi.org/10.1088/0957-4484/24/15/155601
Abstract: A procedure for the synthesis of monodisperse spherical mesoporous silica particles (MSMSPs) via the controlled coagulation of silica/surfactant clusters into spherical aggregates with mean diameters of 250-1500 nm has been developed. The synthesis is fast (taking less than 1 h) because identical clusters are simultaneously formed in the reaction mixture. The results of microscopic, x-ray diffraction, adsorption and optical measurements allowed us to conclude that the clusters are similar to 15 nm in size and have hexagonally packed cylindrical pore channels. The channel diameters in MSMSPs obtained with cethyltrimethylammonium bromide and decyltrimethylammonium bromide as structure-directing agents were 3.1 +/- 0.15 and 2.3 +/- 0.12 nm, respectively. The specific surface area and the pore volume of MSMSP were, depending on synthesis conditions, 480-1095 m(2) g(-1) and 0.50-0.65 cm(3) g(-1). The MSMSP were used to grow opal-like photonic-crystal films possessing a hierarchical macro-mesoporous structure, with pores within and between the particles. A selective filling of mesopore channels with glycerol, based on the difference between the capillary pressures in macro- and mesopores, was demonstrated. It is shown that this approach makes it possible to control the photonic bandgap position in mesoporous opal films by varying the degree of mesopore filling with glycerol. Online supplementary data available from stacks.iop.org/Nano/24/155601/mmedia
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 49
DOI: 10.1088/0957-4484/24/15/155601
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“Preparation and structure analysis of Gd(OH)3 nanorods”. Du G, Van Tendeloo G, Nanotechnology 16, 595 (2005). http://doi.org/10.1088/0957-4484/16/4/043
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 28
DOI: 10.1088/0957-4484/16/4/043
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“Structural and luminescence investigation on gadolinium gallium garnet nanocrystalline powders prepared by solution combustion synthesis”. Krsmanovic R, Morozov VA, Lebedev OI, Polizzi S, Speghini A, Bettinelli M, Van Tendeloo G, Nanotechnology 18, 325604 (2007). http://doi.org/10.1088/0957-4484/18/32/325604
Abstract: Nanocrystalline powders of undoped and lanthanide (Pr3+, Tm3+)- doped gadolinium gallium garnet, Gd3Ga5O12 (GGG), were prepared by propellant synthesis and studied by x-ray powder diffraction (XRD), electron diffraction (ED), high-resolution electron microscopy (HREM) and luminescence spectroscopy. The x-ray diffraction patterns of the GGG samples were analysed using the Rietveld method. The Rietveld refinement reveals the existence of two garnet-type phases: both are cubic (space group Ia $(3) over bar $d) with a slightly different lattice parameter and probably a slightly different composition. Electron diffraction and electron microscopy measurements confirm the x-ray diffraction results. EDX measurements for lanthanide-doped samples show that stable solid solutions with composition Gd(3-x)Ln(x)Ga(5)O(12), x approximate to 0.3 ( Ln = Pr; Tm) have been obtained. The luminescence properties of the Tm3+ -doped nanocrystalline GGG samples were measured and analysed.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 33
DOI: 10.1088/0957-4484/18/32/325604
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“Structural characterization and luminescence properties of nanostructured lanthanide-doped Sc2O3 prepared by propellant synthesis”. Krsmanovic R, Lebedev OI, Speghini A, Bettinelli M, Polizzi S, Van Tendeloo G, Nanotechnology 17, 2805 (2006). http://doi.org/10.1088/0957-4484/17/11/013
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 22
DOI: 10.1088/0957-4484/17/11/013
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