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| Author | Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. | ||||
| Title | Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs | Type | A1 Journal article | ||
| Year | 2017 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 111 | Issue | 4 | Pages | 041901 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing. | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000406779700008 | Publication Date | 2017-07-24 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
Impact Factor  |
3.411 | Times cited | 78 | Open Access | Not_Open_Access |
| Notes | ; The authors are grateful to Professor Michael Uren and Dr. Roland B. Simon (University of Bristol) for helpful discussions and to Dr. Sien Drijkoningen (Hasselt University) for taking the SEM micrographs. This work was in part supported by DARPA under Contract No. FA8650-15-C-7517, monitored by Dr. Avram Bar Cohen and Dr. John Blevins, and supported by Dr. Joseph Maurer and Dr. Abirami Sivananthan. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of DARPA. Y.Z. acknowledges China Scholarship Council for the financial support. S.K. and J.V. acknowledge the FWO-Vlaanderen for financial support under contract G.0044.13N “Charge ordering.” ; | Approved | Most recent IF: 3.411 | ||
| Call Number | UA @ lucian @ c:irua:145203 | Serial | 4728 | ||
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| Author | Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A. | ||||
| Title | Mechanisms for plasma cryogenic etching of porous materials | Type | A1 Journal article | ||
| Year | 2017 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 111 | Issue | 17 | Pages | 173104 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling. | ||||
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| Language | Wos | 000413863400032 | Publication Date | 2017-10-23 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 2 | Open Access | OpenAccess |
| Notes | We acknowledge the support from Marie Skłodowska- Curie actions (Grant Agreement-702604). This work was carried out in part using the Turing HPC infrastructure at the CalcUA core facility of Universiteit Antwerpen, a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI), and the University of Antwerp. L. Zhang and J.-F. de Marneffe acknowledge Dr. M. Cooke and A. Goodyear from Oxford Instruments Plasma Technology for processing the samples at their Yatton facility in the United Kingdom. | Approved | Most recent IF: 3.411 | ||
| Call Number | PLASMANT @ plasmant @c:irua:147022 | Serial | 4762 | ||
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| Author | Abdullah, H.M.; Van der Donck, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B. | ||||
| Title | Graphene quantum blisters : a tunable system to confine charge carriers | Type | A1 Journal article | ||
| Year | 2018 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 112 | Issue | 21 | Pages | 213101 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carriers. Here, we propose that bilayer graphene with a local region of decoupled graphene layers is able to generate bound states under the application of an electrostatic gate. The discrete energy levels in such a quantum blister correspond to localized electron and hole states in the top and bottom layers. We find that this layer localization and the energy spectrum itself are tunable by a global electrostatic gate and that the latter also coincides with the electronic modes in a graphene disk. Curiously, states with energy close to the continuum exist primarily in the classically forbidden region outside the domain defining the blister. The results are robust against variations in size and shape of the blister which shows that it is a versatile system to achieve tunable electrostatic confinement in graphene. Published by AIP Publishing. | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000433140900025 | Publication Date | 2018-05-22 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 9 | Open Access | |
| Notes | ; H.M.A. and H.B. acknowledge the Saudi Center for Theoretical Physics (SCTP) for their generous support and the support of KFUPM under physics research group Project Nos. RG1502-1 and RG1502-2. This work was supported by the Flemish Science Foundation (FWO-Vl) by a post-doctoral fellowship (B.V.D.) and a doctoral fellowship (M.V.d.D.). ; | Approved | Most recent IF: 3.411 | ||
| Call Number | UA @ lucian @ c:irua:151505UA @ admin @ c:irua:151505 | Serial | 5027 | ||
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| Author | Kong, X.; Li, L.; Peeters, F.M. | ||||
| Title | Topological Dirac semimetal phase in <tex> $GexSny alloys | Type | A1 Journal article | ||
| Year | 2018 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 112 | Issue | 25 | Pages | 251601 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Recently, two stable allotropes (germancite and stancite) for the group IV elements (Ge and Sn) with a staggered layered dumbell structure were proposed to be three-dimensional (3D) topological Dirac semimetals [Phys. Rev. B 93, 241117 (2016)]. A pair of Dirac points is on the rotation axis away from the time-reversal invariant momentum, and the stability of the 3D bulk Dirac points is protected by the C-3 rotation symmetry. Here, we use the first principles calculations to investigate GexSny alloys which share the same rhombohedral crystal structure with the space group of D-3d(6). Six GexSny alloys are predicted to be energetically and dynamically stable, where (x, y) = (8, 6) and (6, 8) and the alpha and beta phases of (10, 4) and (4, 10). Our results demonstrate that all the six GexSny alloys are topological Dirac semimetals. The different nontrivial surface states and surface Fermi arcs are identified. Our work will substantially enrich the family of 3D Dirac semimetals which are within the reach of experimental realization. Published by AIP Publishing. | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | 000435987400013 | Publication Date | 2018-06-18 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 8 | Open Access | |
| Notes | ; This work was supported by the Collaborative Innovation Center of Quantum Matter, the Fonds voor Wetenschappelijk Onderzoek (FWO-VI), and the FLAG-ERA Project TRANS 2D TMD. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government – department EWI, and the National Supercomputing Center in Tianjin, funded by the Collaborative Innovation Center of Quantum Matter. ; | Approved | Most recent IF: 3.411 | ||
| Call Number | UA @ lucian @ c:irua:151970UA @ admin @ c:irua:151970 | Serial | 5045 | ||
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| Author | Ghimire, B.; Szili, E.J.; Lamichhane, P.; Short, R.D.; Lim, J.S.; Attri, P.; Masur, K.; Weltmann, K.-D.; Hong, S.-H.; Choi, E.H. | ||||
| Title | The role of UV photolysis and molecular transport in the generation of reactive species in a tissue model with a cold atmospheric pressure plasma jet | Type | A1 Journal article | ||
| Year | 2019 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 114 | Issue | 9 | Pages | 093701 |
| Keywords | A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) | ||||
| Abstract | Cold atmospheric pressure plasma jets (plasma) operated in ambient air provide a rich source of reactive oxygen and nitrogen species (RONS), which are known to influence biological processes important in disease. In the plasma treatment of diseased tissue such as subcutaneous cancer tumors, plasma RONS need to first traverse an interface between the plasma-skin surface and second be transported to millimeter depths in order to reach deep-seated diseased cells. However, the mechanisms in the plasma generation of RONS within soft tissues are not understood. In this study, we track the plasma jet delivery of RONS into a tissue model target and we delineate two processes: through target delivery of RONS generated (primarily) in the plasma jet and in situ RONS generation by UV photolysis within the target. We demonstrate that UV photolysis promotes the rapid generation of RONS in the tissue model target’s surface after which the RONS are transported to millimeter depths via a slower molecular process. Our results imply that the flux of UV photons from plasma jets is important for delivering RONS through seemingly impenetrable barriers such as skin. The findings have implications not only in treatments of living tissues but also in the functionalization of soft hydrated biomaterials such as hydrogels and extracellular matrix derived tissue scaffolds. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000460820600048 | Publication Date | 2019-03-04 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 12 | Open Access | Not_Open_Access |
| Notes | National Research Foundation of Korea, NRF-2016K1A4A3914113 ; Australian Research Council, DP16010498 ; This work was supported by the National Research Foundation of Korea (NRF) Grant No. NRF-2016K1A4A3914113 and in part by Kwangwoon University 2018, Korea. E.J.S., S.-H.H., and R.D.S. wish to thank the Australian Research Council for partially supporting this research through Discovery Project No. DP16010498 and UniSA through the Vice Chancellor Development Fund. | Approved | Most recent IF: 3.411 | ||
| Call Number | PLASMANT @ plasmant @UA @ admin @ c:irua:158111 | Serial | 5159 | ||
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| Author | Jannis, D.; Müller-Caspary, K.; Béché, A.; Oelsner, A.; Verbeeck, J. | ||||
| Title | Spectroscopic coincidence experiments in transmission electron microscopy | Type | A1 Journal article | ||
| Year | 2019 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 114 | Issue | 14 | Pages | 143101 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | We demonstrate the feasibility of coincidence measurements on a conventional transmission electron microscope, revealing the temporal correlation between electron energy loss spectroscopy (EELS) and energy dispersive X-ray (EDX) spectroscopy events. We make use of a delay line detector with ps-range time resolution attached to a modified EELS spectrometer. We demonstrate that coincidence between both events, related to the excitation and deexcitation of atoms in a crystal, provides added information not present in the individual EELS or EDX spectra. In particular, the method provides EELS with a significantly suppressed or even removed background, overcoming the many difficulties with conventional parametric background fitting as it uses no assumptions on the shape of the background, requires no user input and does not suffer from counting noise originating from the background signal. This is highly attractive, especially when low concentrations of elements need to be detected in a matrix of other elements. |
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| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000464450200022 | Publication Date | 2019-04-08 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 18 | Open Access | OpenAccess |
| Notes | Fonds Wetenschappelijk Onderzoek, G093417 ; Horizon 2020 Framework Programme, 823717 ESTEEM3 ; Helmholtz Association, VH-NG-1327 ; | Approved | Most recent IF: 3.411 | ||
| Call Number | EMAT @ emat @UA @ admin @ c:irua:159155 | Serial | 5168 | ||
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| Author | Guzzinati, G.; Ghielens, W.; Mahr, C.; Béché, A.; Rosenauer, A.; Calders, T.; Verbeeck, J. | ||||
| Title | Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping | Type | A1 Journal article | ||
| Year | 2019 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 114 | Issue | 24 | Pages | 243501 |
| Keywords | A1 Journal article; ADReM Data Lab (ADReM); Electron microscopy for materials research (EMAT) | ||||
| Abstract | Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with a very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with a subnanometer resolution. Here, we present a method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than 2.5 × 10−4 and an accuracy of 1.5 × 10−3, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Wos | 000472599100019 | Publication Date | 2019-06-17 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 17 | Open Access | OpenAccess |
| Notes | Deutsche Forschungsgemeinschaft, RO2057/12-2 ; Fonds Wetenschappelijk Onderzoek, G.0934.17N ; | Approved | Most recent IF: 3.411 | ||
| Call Number | EMAT @ emat @UA @ admin @ c:irua:160119 | Serial | 5181 | ||
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| Author | Li, L.L.; Peeters, F.M. | ||||
| Title | Strain engineered linear dichroism and Faraday rotation in few-layer phosphorene | Type | A1 Journal article | ||
| Year | 2019 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 114 | Issue | 24 | Pages | 243102 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | We investigate theoretically the linear dichroism and the Faraday rotation of strained few-layer phosphorene, where strain is applied uniaxially along the armchair or zigzag direction of the phosphorene lattice. We calculate the optical conductivity tensor of uniaxially strained few-layer phosphorene by means of the Kubo formula within the tight-binding approach. We show that the linear dichroism and the Faraday rotation of few-layer phosphorene can be significantly modulated by the applied strain. The modulation depends strongly on both the magnitude and direction of strain and becomes more pronounced with increasing number of phosphorene layers. Our results are relevant for mechano-optoelectronic applications based on optical absorption and Hall effects in strained few-layer phosphorene. | ||||
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| Language | Wos | 000472599100029 | Publication Date | 2019-06-17 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 12 | Open Access | |
| Notes | ; This work was financially supported by the Flemish Science Foundation (FWO-Vl) and by the FLAG-ERA Project TRANS-2D-TMD. ; | Approved | Most recent IF: 3.411 | ||
| Call Number | UA @ admin @ c:irua:161327 | Serial | 5428 | ||
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| Author | Zarenia, M.; Conti, S.; Peeters, F.M.; Neilson, D. | ||||
| Title | Coulomb drag in strongly coupled quantum wells : temperature dependence of the many-body correlations | Type | A1 Journal article | ||
| Year | 2019 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 115 | Issue | 20 | Pages | 202105 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | We investigate the effect of the temperature dependence of many-body correlations on hole-hole Coulomb drag in strongly coupled GaAs/GaAlAs double quantum wells. For arbitrary temperatures, we obtained the correlations using the classical-map hypernetted-chain approach. We compare the temperature dependence of the resulting drag resistivities rho D(T) at different densities with rho D(T) calculated assuming correlations fixed at zero temperature. Comparing the results with those when correlations are completely neglected, we confirm that correlations significantly increase the drag. We find that the drag becomes sensitive to the temperature dependence of T greater than or similar to 2TF, twice the Fermi temperature. Our results show excellent agreement with available experimental data. Published under license by AIP Publishing. | ||||
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| Language | Wos | 000498619400007 | Publication Date | 2019-11-14 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | 2 | Open Access | |
| Notes | Approved | Most recent IF: 3.411 | |||
| Call Number | UA @ admin @ c:irua:165135 | Serial | 6291 | ||
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| Author | Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. | ||||
| Title | A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties | Type | A1 Journal article | ||
| Year | 2021 | Publication | Applied Physics Letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 118 | Issue | 20 | Pages | 203103 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | Motivated by the recent experimental realization of a two-dimensional (2D) BeN4 monolayer, in this study we investigate the structural, dynamical, electronic, and optical properties of a monolayer and few-layer BeN4 using first-principles calculations. The calculated phonon band dispersion reveals the dynamical stability of a free-standing BeN4 layer, while the cohesive energy indicates the energetic feasibility of the material. Electronic band dispersions show that monolayer BeN4 is a semi-metal whose conduction and valence bands touch each other at the Sigma point. Our results reveal that increasing the layer number from single to six-layers tunes the electronic nature of BeN4. While monolayer and bilayer structures display a semi-metallic behavior, structures thicker than that of three-layers exhibit a metallic nature. Moreover, the optical parameters calculated for monolayer and bilayer structures reveal that the bilayer can absorb visible light in the ultraviolet and visible regions better than the monolayer structure. Our study investigates the electronic properties of Dirac-semimetal BeN4 that can be an important candidate for applications in nanoelectronic and optoelectronic. Published under an exclusive license by AIP Publishing. | ||||
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| Language | Wos | 000691329900002 | Publication Date | 2021-05-20 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | Open Access | Not_Open_Access | |
| Notes | Approved | Most recent IF: 3.411 | |||
| Call Number | UA @ admin @ c:irua:181725 | Serial | 6980 | ||
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| Author | Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. | ||||
| Title | Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures | Type | A1 Journal article | ||
| Year | 2021 | Publication | Applied Physics Letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 118 | Issue | 14 | Pages | 143102 |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
| Abstract | In this Letter, we explore the lattice, dynamical stability, and electronic and magnetic properties of FeTe bulk and FeX (X=S, Se, Te) monolayers using the density functional calculations. The phonon dispersion relation, elastic stability criteria, and cohesive energy results show the stability of studied FeX monolayers. The mechanical properties reveal that all FeX monolayers have a brittle nature. Furthermore, these structures are stable as we move down the 6A group in the periodic table, i.e., from S, Se, and Te. The stability and work function decrease as the electronegativity decreases. The spin-polarized electronic structures demonstrate that the FeTe monolayer has a total magnetization of 3.8 mu (B), which is smaller than the magnetization of FeTe bulk (4.7 mu (B)). However, FeSe and FeS are nonmagnetic monolayers. The FeTe monolayer can be a good candidate material for spin filter applications due to its electronic and magnetic properties. This study highlights the bright prospect for the application of FeX monolayers in electronic structures. | ||||
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| Language | Wos | 000637703700001 | Publication Date | 2021-04-07 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.411 | Times cited | Open Access | OpenAccess | |
| Notes | Approved | Most recent IF: 3.411 | |||
| Call Number | UA @ admin @ c:irua:177731 | Serial | 6985 | ||
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| Author | Kálna, K.; Mo×ko, M.; Peeters, F.M. | ||||
| Title | Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering | Type | A1 Journal article | ||
| Year | 1996 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 68 | Issue | Pages | 117-119 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1996TM84700040 | Publication Date | 0000-00-00 | |
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| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.302 | Times cited | 10 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:15802 | Serial | 912 | ||
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| Author | Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. | ||||
| Title | InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | Type | A1 Journal article | ||
| Year | 1992 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 60 | Issue | Pages | 868-870 | |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1992HD74800027 | Publication Date | 2002-07-26 | |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.302 | Times cited | 20 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:4089 | Serial | 1590 | ||
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| Author | Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. | ||||
| Title | InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | Type | A1 Journal article | ||
| Year | 1992 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 600 | Issue | 26 | Pages | 3256-3258 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
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| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1992JA80600019 | Publication Date | 2002-07-26 | |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.302 | Times cited | 32 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:4102 | Serial | 1591 | ||
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| Author | Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. | ||||
| Title | Nonlinear transport phenomena in a triangular quantum well | Type | A1 Journal article | ||
| Year | 1991 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 59 | Issue | Pages | 1708-1710 | |
| Keywords | A1 Journal article; Condensed Matter Theory (CMT) | ||||
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| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1991GH40900019 | Publication Date | 0000-00-00 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; 1077-3118 | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.302 | Times cited | 11 | Open Access | |
| Notes | Approved | no | |||
| Call Number | UA @ lucian @ c:irua:945 | Serial | 2360 | ||
| Permanent link to this record | |||||
| Author | Verbist, K.; Vasiliev, A.L.; Van Tendeloo, G. | ||||
| Title | Y2O3 inclusions in YBa2Cu3O7-\delta thin films | Type | A1 Journal article | ||
| Year | 1995 | Publication | Applied physics letters | Abbreviated Journal | Appl Phys Lett |
| Volume | 66 | Issue | 11 | Pages | 1424-1426 |
| Keywords | A1 Journal article; Electron microscopy for materials research (EMAT) | ||||
| Abstract | Nanoprecipitates in YBa2Cu3O7‐δ(YBCO) thin films have been identified by high resolution electron microscopy (HREM) as Y2O3 inclusions; they correspond to two different types of epitaxial relationships namely [001] or [110] parallel to the YBCOc‐axis. The [001] precipitates are situated near the YBCO surface, in the bulk and on the YBCO film/substrate interface. The [110] precipitates have only been observed at the surface. Literature data have been reinterpreted. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | American Institute of Physics | Place of Publication | New York, N.Y. | Editor | |
| Language | Wos | A1995QL57700042 | Publication Date | 2002-07-26 | |
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951; | ISBN | Additional Links | UA library record; WoS full record; WoS citing articles | |
| Impact Factor |
3.302 | Times cited | 28 | Open Access | |
| Notes | Approved | CHEMISTRY, PHYSICAL 54/144 Q2 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 9/35 Q2 # | |||
| Call Number | UA @ lucian @ c:irua:13324 | Serial | 3564 | ||
| Permanent link to this record | |||||