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“Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties”. Ramaneti R, Sankaran KJ, Korneychuk S, Yeh CJ, Degutis G, Leou KC, Verbeeck J, Van Bael MK, Lin IN, Haenen K, APL materials 5, 066102 (2017). http://doi.org/10.1063/1.4985107
Abstract: A “patterned-seeding technique” in combination with a “nanodiamond masked reactive ion etching process” is demonstrated for fabricating vertically aligned diamond-graphite hybrid (DGH) nanorod arrays. The DGH nanorod arrays possess superior field electron emission (FEE) behavior with a low turn-on field, long lifetime stability, and large field enhancement factor. Such an enhanced FEE is attributed to the nanocomposite nature of theDGHnanorods, which contain sp(2)-graphitic phases in the boundaries of nano-sized diamond grains. The simplicity in the nanorod fabrication process renders the DGH nanorods of greater potential for the applications as cathodes in field emission displays and microplasma display devices. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.335
Times cited: 16
DOI: 10.1063/1.4985107
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“Barrier efficiency of sponge-like La2Zr2O7 buffer layers for YBCO-coated conductors”. Molina L, Tan H, Biermans E, Batenburg KJ, Verbeeck J, Bals S, Van Tendeloo G, Superconductor science and technology 24, 065019 (2011). http://doi.org/10.1088/0953-2048/24/6/065019
Abstract: Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of La2Zr2O7, but different film processing methods can yield similar microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains. Nanoporosity is a typical feature found in such films and the implications for the functionality of the films are investigated by a combination of scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS) and quantitative electron tomography. Chemical solution based La2Zr2O7 films deposited on flexible Ni5 at.%W substrates with a {100}lang001rang biaxial texture were prepared for an in-depth characterization. A sponge-like structure composed of nanometer-sized voids is revealed by high-angle annular dark-field scanning transmission electron microscopy in combination with electron tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7 film is obtained on a local scale. Mostly non-interconnected highly faceted nanovoids compromise more than one-fifth of the investigated sample volume. The diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by STEM-EELS, yielding a 1.8 ± 0.2 nm oxide layer beyond which no significant nickel diffusion can be detected and intermixing is observed. This is of particular significance for the functionality of YBa2Cu3O7 − δ coated conductor architectures based on solution derived La2Zr2O7 films as diffusion barriers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.878
Times cited: 31
DOI: 10.1088/0953-2048/24/6/065019
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“Exploiting lens aberrations to create electron-vortex beams”. Clark L, Béché, A, Guzzinati G, Lubk A, Mazilu M, Van Boxem R, Verbeeck J, Physical review letters 111, 064801 (2013). http://doi.org/10.1103/PhysRevLett.111.064801
Abstract: A model for a new electron-vortex beam production method is proposed and experimentally demonstrated. The technique calls on the controlled manipulation of the degrees of freedom of the lens aberrations to achieve a helical phase front. These degrees of freedom are accessible by using the corrector lenses of a transmission electron microscope. The vortex beam is produced through a particular alignment of these lenses into a specifically designed astigmatic state and applying an annular aperture in the condenser plane. Experimental results are found to be in good agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.462
Times cited: 66
DOI: 10.1103/PhysRevLett.111.064801
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“Symmetry-constrained electron vortex propagation”. Clark L, Guzzinati G, Béché, A, Lubk A, Verbeeck J, Physical review A 93, 063840 (2016). http://doi.org/10.1103/PhysRevA.93.063840
Abstract: Electron vortex beams hold great promise for development in transmission electron microscopy but have yet to be widely adopted. This is partly due to the complex set of interactions that occur between a beam carrying orbital angular momentum (OAM) and a sample. Herein, the system is simplified to focus on the interaction between geometrical symmetries, OAM, and topology. We present multiple simulations alongside experimental data to study the behavior of a variety of electron vortex beams after interacting with apertures of different symmetries and investigate the effect on their OAM and vortex structure, both in the far field and under free-space propagation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 7
DOI: 10.1103/PhysRevA.93.063840
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“Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond”. Balasubramaniam Y, Pobedinskas P, Janssens SD, Sakr G, Jomard F, Turner S, Lu YG, Dexters W, Soltani A, Verbeeck J, Barjon J, Nesládek M, Haenen K;, Applied physics letters 109, 062105 (2016). http://doi.org/10.1063/1.4960970
Abstract: The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 20
DOI: 10.1063/1.4960970
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“Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO₃/SrTiO₃, interfaces”. Lebedev N, Stehno M, Rana A, Gauquelin N, Verbeeck J, Brinkman A, Aarts J, Journal Of Physics-Condensed Matter 33, 055001 (2020). http://doi.org/10.1088/1361-648X/ABC102
Abstract: We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.7
Times cited: 1
DOI: 10.1088/1361-648X/ABC102
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“Unusual structural rearrangement and superconductivity in infinite layer cuprate superlattices”. Samal D, Gauquelin N, Takamura Y, Lobato I, Arenholz E, Van Aert S, Huijben M, Zhong Z, Verbeeck J, Van Tendeloo G, Koster G, Physical review materials 7, 054803 (2023). http://doi.org/10.1103/PhysRevMaterials.7.054803
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PhysRevMaterials.7.054803
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“Imaging the suppression of ferromagnetism in LaMnO₃, by metallic overlayers”. Folkers B, Jansen T, Roskamp TJ, Reith P, Timmermans A, Jannis D, Gauquelin N, Verbeeck J, Hilgenkamp H, Rosario CMM, Physical review materials 8, 054408 (2024). http://doi.org/10.1103/PHYSREVMATERIALS.8.054408
Abstract: LaMnO 3 (LMO) thin films epitaxially grown on SrTiO 3 (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO / LMO / metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au does not significantly influence the ferromagnetic order of the underlying LMO film, a thin Ti layer induces a strong suppression of the ferromagnetism, over tens of nanometers, which increases with time on a timescale of days. Detailed electron energy loss spectroscopy analysis of the Ti-LaMnO 3 interface reveals the presence of Mn 2 + and an evolution of the Ti valence state from Ti 0 to Ti 4 + over approximately 5 nm. Furthermore, we demonstrate that by patterning Ti / Au overlayers, we can locally suppress the ferromagnetism and define ferromagnetic structures down to sub -micrometer scales.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
DOI: 10.1103/PHYSREVMATERIALS.8.054408
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“Quantitative measurement of orbital angular momentum in electron microscopy”. Clark L, Béché, A, Guzzinati G, Verbeeck J, Physical review : A : atomic, molecular and optical physics 89, 053818 (2014). http://doi.org/10.1103/PhysRevA.89.053818
Abstract: Electron vortex beams have been predicted to enable atomic scale magnetic information measurement, via transfer of orbital angular momentum. Research so far has focused on developing production techniques and applications of these beams. However, methods to measure the outgoing orbital angular momentum distribution are also a crucial requirement towards this goal. Here, we use a method to obtain the orbital angular momentum decomposition of an electron beam, using a multipinhole interferometer. We demonstrate both its ability to accurately measure orbital angular momentum distribution, and its experimental limitations when used in a transmission electron microscope.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 23
DOI: 10.1103/PhysRevA.89.053818
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“Controlled growth of hexagonal gold nanostructures during thermally induced self-assembling on Ge(001) surface”. Jany BR, Gauquelin N, Willhammar T, Nikiel M, van den Bos KHW, Janas A, Szajna K, Verbeeck J, Van Aert S, Van Tendeloo G, Krok F, Scientific reports 7, 42420 (2017). http://doi.org/10.1038/srep42420
Abstract: Nano-sized gold has become an important material in various fields of science and technology, where control over the size and crystallography is desired to tailor the functionality. Gold crystallizes in the face-centered cubic (fcc) phase, and its hexagonal closed packed (hcp) structure is a very unusual and rare phase. Stable Au hcp phase has been reported to form in nanoparticles at the tips of some Ge nanowires. It has also recently been synthesized in the form of thin graphene-supported sheets which are unstable under electron beam irradiation. Here, we show that stable hcp Au 3D nanostructures with well-defined crystallographic orientation and size can be systematically created in a process of thermally induced self-assembly of thin Au layer on Ge(001) monocrystal. The Au hcp crystallite is present in each Au nanostructure and has been characterized by different electron microscopy techniques. We report that a careful heat treatment above the eutectic melting temperature and a controlled cooling is required to form the hcp phase of Au on a Ge single crystal. This new method gives scientific prospects to obtain stable Au hcp phase for future applications in a rather simple manner as well as redefine the phase diagram of Gold with Germanium.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 25
DOI: 10.1038/srep42420
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“Self-assembled epitaxial cathode-electrolyte nanocomposites for 3D microbatteries”. Cunha DM, Gauquelin N, Xia R, Verbeeck J, Huijben M, ACS applied materials and interfaces 14, 42208 (2022). http://doi.org/10.1021/ACSAMI.2C09474
Abstract: The downscaling of electronic devices requires rechargeable microbatteries with enhanced energy and power densities. Here, we evaluate self-assembled vertically aligned nano-composite (VAN) thin films as a platform to create high-performance three-dimensional (3D) microelectrodes. This study focuses on controlling the VAN formation to enable interface engineering between the LiMn2O4 cathode and the (Li,La)TiO3 solid electrolyte. Electrochemical analysis in a half cell against lithium metal showed the absence of sharp redox peaks due to the confinement in the electrode pillars at the nanoscale. The (100)-oriented VAN thin films showed better rate capability and stability during extensive cycling due to the better alignment to the Li-diffusion channels. However, an enhanced pseudocapacitive contribution was observed for the increased total surface area within the (110)-oriented VAN thin films. These results demonstrate for the first time the electrochemical behavior of cathode-electrolyte VANs for lithium-ion 3D microbatteries while pointing out the importance of control over the vertical interfaces.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 9.5
Times cited: 4
DOI: 10.1021/ACSAMI.2C09474
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“Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains”. Lu Y-G, Turner S, Verbeeck J, Janssens SD, Wagner P, Haenen K, Van Tendeloo G, Applied physics letters 101, 041907 (2012). http://doi.org/10.1063/1.4738885
Abstract: The boron dopant distribution in individual heavily boron-doped nanocrystalline diamond film grains, with sizes ranging from 100 to 350nm in diameter, has been studied using a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these tools, the boron distribution and local boron coordination have been determined. Quantification results reveal embedding of B dopants in the diamond lattice, and a preferential enrichment of boron at defective areas and twin boundaries. Coordination mapping reveals a distinct difference in coordination of the B dopants in “pristine” diamond areas and in defective regions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738885]
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 59
DOI: 10.1063/1.4738885
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“Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs”. Zhou Y, Ramaneti R, Anaya J, Korneychuk S, Derluyn J, Sun H, Pomeroy J, Verbeeck J, Haenen K, Kuball M, Applied physics letters 111, 041901 (2017). http://doi.org/10.1063/1.4995407
Abstract: Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 78
DOI: 10.1063/1.4995407
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“Electron vortex beams in a magnetic field : a new twist on Landau levels and Aharonov-Bohm states”. Bliokh KY, Schattschneider P, Verbeeck J, Nori F, Physical review X 2, 041011 (2012). http://doi.org/10.1103/PhysRevX.2.041011
Abstract: We examine the propagation of the recently discovered electron vortex beams in a longitudinal magnetic field. We consider both the Aharonov-Bohm configuration with a single flux line and the Landau case of a uniform magnetic field. While stationary Aharonov-Bohm modes represent Bessel beams with flux- and vortex-dependent probability distributions, stationary Landau states manifest themselves as nondiffracting Laguerre-Gaussian beams. Furthermore, the Landau-state beams possess field- and vortex-dependent phases: (i) the Zeeman phase from coupling the quantized angular momentum to the magnetic field and (ii) the Gouy phase, known from optical Laguerre-Gaussian beams. Remarkably, together these phases determine the structure of Landau energy levels. This unified Zeeman-Landau-Gouy phase manifests itself in a nontrivial evolution of images formed by various superpositions of modes. We demonstrate that, depending on the chosen superposition, the image can rotate in a magnetic field with either (i) Larmor, (ii) cyclotron (double-Larmor), or (iii) zero frequency. At the same time, its centroid always follows the classical cyclotron trajectory, in agreement with the Ehrenfest theorem. Interestingly, the nonrotating superpositions reproduce stable multivortex configurations that appear in rotating superfluids. Our results open an avenue for the direct electron-microscopy observation of fundamental properties of free quantum-electron states in magnetic fields.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.789
Times cited: 130
DOI: 10.1103/PhysRevX.2.041011
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“Spin effects in electron vortex states”. Van Boxem R, Verbeeck J, Partoens B, Europhysics letters 102, 40010 (2013). http://doi.org/10.1209/0295-5075/102/40010
Abstract: The recent experimental realization of electron vortex beams opens up a wide research domain previously unexplored. The present paper explores the relativistic properties of these electron vortex beams, and quantifies deviations from the scalar wave theory. It is common in electron optics to use the Schrodinger equation neglecting spin. The present paper investigates the role of spin and the total angular momentum J(z) and how it pertains to the vortex states. As an application, we also investigate if it is possible to use holographic reconstruction to create novel total angular momentum eigenstates in a transmission electron microscope. It is demonstrated that relativistic spin coupling effects disappear in the paraxial limit, and spin effects in holographically created electron vortex beams can only be exploited by using specialized magnetic apertures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 11
DOI: 10.1209/0295-5075/102/40010
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“Structural phase transition and spontaneous interface reconstruction in La2/3Ca1/3MnO3/BaTiO3 superlattices”. Turner S, Lebedev OI, Verbeeck J, Gehrke K, Moshnyaga V, Van Tendeloo G, Physical review : B : condensed matter and materials physics 87, 035418 (2013). http://doi.org/10.1103/PhysRevB.87.035418
Abstract: (La2/3Ca1/3MnO3)n/(BaTiO3)m (LCMOn/BTOm) superlattices on MgO and SrTiO3 substrates with different layer thicknesses (n = 10, 38, 40 and m = 5, 18, 20) have been grown by metal organic aerosol deposition (MAD) and have been fully characterized down to the atomic scale to study the interface characteristics. Scanning transmission electron microscopy combined with spatially resolved electron energy-loss spectroscopy provides clear evidence for the existence of atomically sharp interfaces in MAD grown films, which exhibit epitaxial growth conditions, a uniform normal strain, and a fully oxidized state. Below a critical layer thickness the LCMO structure is found to change from the bulk Pnma symmetry to a pseudocubic R3̅ c symmetry. An atomically flat interface reconstruction consisting of a single Ca-rich atomic layer is observed on the compressively strained BTO on LCMO interface, which is thought to partially neutralize the total charge from the alternating polar atomic layers in LCMO as well as relieving strain at the interface. No interface reconstruction is observed at the tensile strained LCMO on BTO interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.87.035418
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“Model-based determination of dielectric function by STEM low-loss EELS”. Zhang L, Turner S, Brosens F, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 035102 (2010). http://doi.org/10.1103/PhysRevB.81.035102
Abstract: Dielectric properties of materials are crucial in describing the electromagnetic response of materials. As devices are becoming considerably smaller than the optical wavelength, the conventional measuring methods based on optical response are limited by their spatial resolution. Electron energy loss spectroscopy performed in a scanning transmission electron microscope is a good alternative to obtain the dielectric properties with excellent spatial resolution. Due to the overlap of diffraction discs in scanning transmission electron microscopy, it is difficult to apply conventional experimental settings to suppress retardation losses. In this contribution, a relativistic dielectric model for the loss function is presented which is used in a model based optimization scheme to estimate the complex dielectric function of a material. The method is applied to experiments on bulk diamond and SrTiO3 and shows a good agreement with optical reference data when retardation effects are included. Application of this technique to nanoparticles is possible but several theoretical assumptions made in the model of the loss function are violated and interpretation becomes problematic.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Theory of quantum systems and complex systems
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.81.035102
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“Superconductor-insulator transition driven by pressure-tuned intergrain coupling in nanodiamond films”. Zhang G, Zhou Y, Korneychuk S, Samuely T, Liu L, May PW, Xu Z, Onufriienko O, Zhang X, Verbeeck J, Samuely P, Moshchalkov VV, Yang Z, Rubahn H-G, Physical review materials 3, 034801 (2019). http://doi.org/10.1103/PHYSREVMATERIALS.3.034801
Abstract: We report on the pressure-driven superconductor-insulator transition in heavily boron-doped nanodiamond films. By systematically increasing the pressure, we suppress the Josephson coupling between the superconducting nanodiamond grains. The diminished intergrain coupling gives rise to an overall insulating state in the films, which is interpreted in the framework of a parallel-series circuit model to be the result of bosonic insulators with preserved localized intragrain superconducting order parameters. Our investigation opens up perspectives for the application of high pressure in research on quantum confinement and coherence. Our data unveil the percolative nature of the electrical transport in nanodiamond films, and highlight the essential role of grain boundaries in determining the electronic properties of this material.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.926
Times cited: 5
DOI: 10.1103/PHYSREVMATERIALS.3.034801
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“Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy”. Prabhakara V, Nuytten T, Bender H, Vandervorst W, Bals S, Verbeeck J, Optics Express 29, 34531 (2021). http://doi.org/10.1364/OE.434726
Abstract: Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever-increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high sensitivity to mechanical stress that does not require any special sample preparation procedures in comparison to characterization involving transmission electron microscopy (TEM), making it suitable for inline strain measurement in the semiconductor industry. Indeed, at present, strain measurements using Raman spectroscopy are already routinely carried out in semiconductor devices as it is cost effective, fast and non-destructive. In this paper we explore the usage of linearized radially polarized light as an excitation source, which does provide significantly enhanced accuracy and precision as compared to linearly polarized light for this application. Numerical simulations are done to quantitatively evaluate the electric field intensities that contribute to this enhanced sensitivity. We benchmark the experimental results against TEM diffraction-based techniques like nano-beam diffraction and Bessel diffraction. Differences between both approaches are assigned to strain relaxation due to sample thinning required in TEM setups, demonstrating the benefit of Raman for nondestructive inline testing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.307
Times cited: 2
DOI: 10.1364/OE.434726
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“Controlling the interfacial conductance in LaAlO3/SrTiO3 in 90 degrees off-axis sputter deposition”. Yin C, Krishnan D, Gauquelin N, Verbeeck J, Aarts J, Physical review materials 3, 034002 (2019). http://doi.org/10.1103/PHYSREVMATERIALS.3.034002
Abstract: We report on the fabrication of conducting interfaces between LaAlO3 and SrTiO3 by 90 degrees off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of 1 x 10(13) cm(-2) at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO3 films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research shows that the control which is furnished by the Ar pressure makes sputtering as versatile a process as pulsed laser deposition, and emphasizes the key role of the cation stoichiometry of LaAlO3 in the formation of the conducting interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.926
Times cited: 4
DOI: 10.1103/PHYSREVMATERIALS.3.034002
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“Strain measurement in semiconductor FinFET devices using a novel moiré, demodulation technique”. Prabhakara V, Jannis D, Béché, A, Bender H, Verbeeck J, Semiconductor science and technology (2019). http://doi.org/10.1088/1361-6641/ab5da2
Abstract: Moiré fringes are used throughout a wide variety of applications in physics and
engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.305
Times cited: 8
DOI: 10.1088/1361-6641/ab5da2
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“Magnetic and magnetodielectric properties of erbium iron garnet ceramic”. Maignan A, Singh K, Simon C, Lebedev OI, Martin C, Tan H, Verbeeck J, Van Tendeloo G, Journal of applied physics 113, 033905 (2013). http://doi.org/10.1063/1.4776716
Abstract: An Er3Fe5O12 ceramic has been sintered in oxygen atmosphere at 1400 °C for dielectric measurements. Its structural quality at room temperature has been checked by combining transmission electron microscopy and X-ray diffraction. It crystallizes in the cubic space group Ia3d with a = 12.3488(1). The dielectric permittivity ([variantgreekepsilon]′) and losses (tan δ) measurements as a function of temperature reveal the existence of two anomalies, a broad one between 110 K and 80 K, attributed to the Er3+ spin reorientation, and a second sharper feature at about 45 K associated to the appearance of irreversibility on the magnetic susceptibility curves. In contrast to the lack of magnetic field impact on [variantgreekepsilon]′ for the former anomaly, a complex magnetic field effect has been evidenced below 45 K. The isothermal [variantgreekepsilon]′(H) curves show the existence of positive magnetodielectric effect, reaching a maximum of 0.14% at 3 T and 10 K. Its magnitude decreases as H is further increased. Interestingly, for the lowest H values, a linear regime in the [variantgreekepsilon]′(H) curve is observed. From this experimental study, it is concluded that the [variantgreekepsilon]′ anomaly, starting above the compensation temperature Tc (75 K) and driven by the internal magnetic field, is not sensitive to an applied external magnetic field. Thus, below 45 K, it is the magnetic structure which is responsible for the coupling between spin and charge in this iron garnet.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 15
DOI: 10.1063/1.4776716
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“Extension of Friedel's law to vortex-beam diffraction”. Juchtmans R, Guzzinati G, Verbeeck J, Physical Review A 94, 033858 (2016). http://doi.org/10.1103/PhysRevA.94.033858
Abstract: Friedel's law states that the modulus of the Fourier transform of real functions is centrosymmetric, while the phase is antisymmetric. As a consequence of this, elastic scattering of plane-wave photons or electrons within the first-order Born-approximation, as well as Fraunhofer diffraction on any aperture, is bound to result in centrosymmetric diffraction patterns. Friedel's law, however, does not apply for vortex beams, and centrosymmetry in general is not present in their diffraction patterns. In this work we extend Friedel's law for vortex beams by showing that the diffraction patterns of vortex beams with opposite topological charge, scattered on the same two-dimensional potential, always are centrosymmetric to one another, regardless of the symmetry of the scattering object. We verify our statement by means of numerical simulations and experimental data. Our research provides deeper understanding in vortex-beam diffraction and can be used to design new experiments to measure the topological charge of vortex beams with diffraction gratings or to study general vortex-beam diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 13
DOI: 10.1103/PhysRevA.94.033858
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“Topological analysis of paraxially scattered electron vortex beams”. Lubk A, Clark L, Guzzinati G, Verbeeck J, Physical review : A : atomic, molecular and optical physics 87, 033834 (2013). http://doi.org/10.1103/PhysRevA.87.033834
Abstract: We investigate topological aspects of subnanometer electron vortex beams upon elastic propagation through atomic scattering potentials. Two main aspects can be distinguished: (i) significantly reduced delocalization compared to a similar nonvortex beam if the beam centers on an atomic column and (ii) site symmetry dependent splitting of higher-order vortex beams. Furthermore, the results provide insight into the complex vortex line fabric within the elastically scattered wave containing characteristic vortex loops predominantly attached to atomic columns and characteristic twists of vortex lines around atomic columns. DOI: 10.1103/PhysRevA.87.033834
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.925
Times cited: 26
DOI: 10.1103/PhysRevA.87.033834
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“Rutherford scattering of electron vortices”. Van Boxem R, Partoens B, Verbeeck J, Physical review : A : atomic, molecular and optical physics 89, 032715 (2014). http://doi.org/10.1103/PhysRevA.89.032715
Abstract: By considering a cylindrically symmetric generalization of a plane wave, the first-order Born approximation of screened Coulomb scattering unfolds two new dimensions in the scattering problem: transverse momentum and orbital angular momentum of the incoming beam. In this paper, the elastic Coulomb scattering amplitude is calculated analytically for incoming Bessel beams. This reveals novel features occurring for wide-angle scattering and quantitative insights for small-angle vortex scattering. The result successfully generalizes the well-known Rutherford formula, incorporating transverse and orbital angular momentum into the formalism.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.925
Times cited: 34
DOI: 10.1103/PhysRevA.89.032715
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“Inelastic electron-vortex-beam scattering”. Van Boxem R, Partoens B, Verbeeck J, Physical review : A : atomic, molecular and optical physics 91, 032703 (2015). http://doi.org/10.1103/PhysRevA.91.032703
Abstract: Recent theoretical and experimental developments in the field of electron-vortex-beam physics have raised questions about what exactly this novelty in the field of electron microscopy (and other fields, such as particle physics) really provides. An important part of the answer to these questions lies in scattering theory. The present investigation explores various aspects of inelastic quantum scattering theory for cylindrically symmetric beams with orbital angular momentum. The model system of Coulomb scattering on a hydrogen atom provides the setting to address various open questions: How is momentum transferred? Do vortex beams selectively excite atoms, and how can one employ vortex beams to detect magnetic transitions? The analytical approach presented here provides answers to these questions. OAM transfer is possible, but not through selective excitation; rather, by pre- and postselection one can filter out the relevant contributions to a specific signal.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.925
Times cited: 31
DOI: 10.1103/PhysRevA.91.032703
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“Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy”. Lu Y-G, Turner S, Verbeeck J, Janssens SD, Haenen K, Van Tendeloo G, Applied physics letters 103, 032105 (2013). http://doi.org/10.1063/1.4813842
Abstract: Variations in local bond length and coordination in boron-doped nanocrystalline diamond (NCD) films have been studied through changes in the fine structure of boron and carbon K-edges in electron energy-loss spectra, acquired in a scanning transmission electron microscope. The presence of high concentrations of B in pristine diamond regions and enrichment of B at defects in single NCD grains is demonstrated. Local bond length variations are evidenced through an energy shift of the carbon 1s → σ* edge at B-rich defective regions within single diamond grains, indicating an expansion of the diamond bond length at sites with local high B content.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.4813842
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“Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface”. Jovanović, Z, Gauquelin N, Koster G, Rubio-Zuazo J, Ghosez P, Verbeeck J, Suvorov D, Spreitzer M, Rsc Advances 10, 31261 (2020). http://doi.org/10.1039/D0RA06548J
Abstract: Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface<italic>i.e.</italic>formation of pits and islands, whereas the composition of the as-formed heterostructure gradually changes from strontium silicide at the interface with silicon, to strontium silicate and SrO in the topmost layer. Epitaxial ordering of SrO, occurring simultaneously with silicon deoxidation, was observed. RHEED analysis has identified that SrO is epitaxially aligned with the (001) Si substrate both with SrO (001) and SrO (111) out-of-plane directions. This observation was discussed from the point of view of SrO desorption, SrO-induced deoxidation of the Si (001) surface and other interfacial reactions as well as structural ordering of deposited SrO. Results of the study present an important milestone in understanding subsequent epitaxial integration of functional oxides with silicon using SrO.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.9
Times cited: 1
DOI: 10.1039/D0RA06548J
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“Epitaxial growth of the candidate ferroelectric Rashba material SrBiO3by pulsed laser deposition”. Verdierre G, Gauquelin N, Jannis D, Birkhölzer YA, Mallik S, Verbeeck J, Bibes M, Koster G, APL materials 11, 031109 (2023). http://doi.org/10.1063/5.0138222
Abstract: Among oxides, bismuthates have been gaining much interest due to their unique features. In addition to their superconducting properties, they show potential for applications as topological insulators and as possible spin-to-charge converters. After being first investigated in their bulk form in the 1980s, bismuthates have been successfully grown as thin films. However, most efforts have focused on BaBiO<sub>3</sub>, with SrBiO<sub>3</sub>receiving only little attention. Here, we report the growth of epitaxial films of SrBiO<sub>3</sub>on both TiO<sub>2</sub>-terminated SrTiO<sub>3</sub>and NdO-terminated NdScO<sub>3</sub>substrates by pulsed laser deposition. SrBiO<sub>3</sub>has a pseudocubic lattice constant of ∼4.25 Å and grows relaxed on NdScO<sub>3</sub>. Counter-intuitively, it grows with a slight tensile strain on SrTiO<sub>3</sub>despite a large lattice mismatch, which should induce compressive strain. High-resolution transmission electron microscopy reveals that this occurs as a consequence of structural domain matching, with blocks of 10 SrBiO<sub>3</sub>unit planes matching blocks of 11 SrTiO<sub>3</sub>unit planes. This work provides a framework for the synthesis of high quality perovskite bismuthates films and for the understanding of their interface interactions with homostructural substrates.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.1
DOI: 10.1063/5.0138222
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“Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures”. Sankaran KJ, Hoang DQ, Kunuku S, Korneychuk S, Turner S, Pobedinskas P, Drijkoningen S, Van Bael MK, D' Haen J, Verbeeck J, Leou K-C, Lin I-N, Haenen K, Scientific reports 6, 29444 (2016). http://doi.org/10.1038/srep29444
Abstract: Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/mum, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/mum with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 15
DOI: 10.1038/srep29444
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