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  Author Title Year Publication Volume Times cited Additional Links (down) Links
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques 2002 Journal of applied physics 91 27 UA library record; WoS full record; WoS citing articles pdf doi
Tadić, M.; Peeters, F.M.; Janssens, K.L.; Korkusinski, M.; Hawrylak, P. Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots 2002 Journal of applied physics 92 73 UA library record; WoS full record; WoS citing articles url doi
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines 2001 Journal of applied physics 90 97 UA library record; WoS full record; WoS citing articles pdf doi
Cornelissens, Y.G.; Peeters, F.M. Response function of a Hall magnetosensor in the diffusive regime 2002 Journal of applied physics 92 24 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Borza, S.; Peeters, F.M. Spin transport in a Mn-doped ZnSe asymmetric tunnel structure 2005 Journal of applied physics 97 26 UA library record; WoS full record; WoS citing articles doi
Salman, O.U.; Finel, A.; Delville, R.; Schryvers, D. The role of phase compatibility in martensite 2012 Journal of applied physics T2 – 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR 111 11 UA library record; WoS full record; WoS citing articles pdf doi
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions 2012 Journal of applied physics 111 30 UA library record; WoS full record; WoS citing articles pdf doi
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor 2010 Journal Of Applied Physics 107 150 UA library record; WoS full record; WoS citing articles doi
Zhang, M.-L.; March, N.H.; Peeters, A.; van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F. Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics 2003 Journal Of Applied Physics 93 UA library record; WoS full record; doi
Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures 1999 Journal Of Applied Physics 85 16 UA library record; WoS full record; WoS citing articles doi
Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. Size distribution and magnetic behavior of lead inclusions in silicon single crystals 1997 Journal of applied physics 81 8 UA library record; WoS full record; WoS citing articles
Chu, D.P.; Peeters, F.M.; Kolodinski, S.; Roca, E. Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics 1996 Journal of applied physics 79 3 UA library record; WoS full record; WoS citing articles
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