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Author Ke, X.
  Title From top-down to bottom-up : from carbon nanotubes to nanodevices Type Doctoral thesis
  Year 2010 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:87408 Serial 1289
Permanent link to this record
 

 
Author Lisiecki, I.; Turner, S.; Bals, S.; Pileni, M.P.; Van Tendeloo, G.
  Title Enhanced stability against oxidation due to 2D self-organisation of hcp cobalt nanocrystals Type H1 Book chapter
  Year 2008 Publication Abbreviated Journal
  Volume Issue Pages 273-274
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Springer Place of Publication Berlin Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN 978-3-540-85226-1 Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:87610 Serial 1055
Permanent link to this record
 

 
Author d' Hondt, H.
  Title Characterization of anion deficient perovskites Type Doctoral thesis
  Year 2011 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:87905 Serial 317
Permanent link to this record
 

 
Author Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G.
  Title Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Type A1 Journal article
  Year 2010 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 107 Issue 2 Pages 024518,1-024518,8
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000274180600122 Publication Date 2010-01-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0021-8979; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 150 Open Access
  Notes Approved Most recent IF: 2.068; 2010 IF: 2.079
  Call Number UA @ lucian @ c:irua:89507 Serial 2146
Permanent link to this record
 

 
Author Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S.
  Title Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing Type A1 Journal article
  Year 2010 Publication Journal Of Physical Chemistry C Abbreviated Journal J Phys Chem C
  Volume 114 Issue 5 Pages 6894-6900
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington, D.C. Editor
  Language Wos 000276562500002 Publication Date 2010-03-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1932-7447;1932-7455; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 4.536 Times cited 54 Open Access
  Notes Approved Most recent IF: 4.536; 2010 IF: 4.524
  Call Number UA @ lucian @ c:irua:89508 Serial 3757
Permanent link to this record
 

 
Author O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V.
  Title Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections Type A1 Journal article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
  Volume 96 Issue 21 Pages 213514,1-213514,3
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000278183200090 Publication Date 2010-05-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 26 Open Access
  Notes Approved Most recent IF: 3.411; 2010 IF: 3.841
  Call Number UA @ lucian @ c:irua:89509 Serial 2143
Permanent link to this record
 

 
Author Cao, S.
  Title Quantitative 3D analysis of Ni4Ti3 precipitate morphology and distribution in Ni-Ti by FIB/SEM slice-and-view Type Doctoral thesis
  Year 2010 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:89816 Serial 2744
Permanent link to this record
 

 
Author Bals, S.; Casavola, M.; van Huis, M.A.; Van Aert, S.; Batenburg, K.J.; Van Tendeloo, G.; Vanmaekelbergh, D.
  Title Three-dimensional atomic imaging of colloidal core-shell nanocrystals Type A1 Journal article
  Year 2011 Publication Nano letters Abbreviated Journal Nano Lett
  Volume 11 Issue 8 Pages 3420-3424
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
  Abstract Colloidal coreshell semiconductor nanocrystals form an important class of optoelectronic materials, in which the exciton wave functions can be tailored by the atomic configuration of the core, the interfacial layers, and the shell. Here, we provide a trustful 3D characterization at the atomic scale of a free-standing PbSe(core)CdSe(shell) nanocrystal by combining electron microscopy and discrete tomography. Our results yield unique insights for understanding the process of cation exchange, which is widely employed in the synthesis of coreshell nanocrystals. The study that we present is generally applicable to the broad range of colloidal heteronanocrystals that currently emerge as a new class of materials with technological importance.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington Editor
  Language Wos 000293665600062 Publication Date 2011-07-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1530-6984;1530-6992; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 12.712 Times cited 121 Open Access
  Notes Esteem 026019; Fwo Approved Most recent IF: 12.712; 2011 IF: 13.198
  Call Number UA @ lucian @ c:irua:91263 Serial 3643
Permanent link to this record
 

 
Author Sels, D.; Sorée, B.; Groeseneken, G.
  Title 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors Type A1 Journal article
  Year 2010 Publication Abbreviated Journal
  Volume Issue Pages 85-88
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract
  Address
  Corporate Author Thesis
  Publisher Pisa University Press Place of Publication Pisa Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title 14th International Workshop on Computational Electronics
  Series Volume Series Issue Edition
  ISSN 978-1-4244-9381-4 ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:91699 Serial 6
Permanent link to this record
 

 
Author Wang, W.-C.
  Title Quantitative analysis of electron exit waves with single atom sensitivity Type Doctoral thesis
  Year 2011 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:93201 Serial 2745
Permanent link to this record
 

 
Author Wang, B.
  Title TEM study of plasticity mechanisms in metals : nanocrystalline Al Pd thin films and bulk bcc Nb Type Doctoral thesis
  Year 2011 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:93202 Serial 3491
Permanent link to this record
 

 
Author van Huis, M.A.; Figuerola, A.; Fang, C.; Béché, A.; Zandbergen, H.W.; Manna, L.
  Title Letter Chemical transformation of Au-tipped CdS nanorods into AuS/Cd core/shell particles by electron beam irradiation Type A1 Journal article
  Year 2011 Publication Nano letters Abbreviated Journal Nano Lett
  Volume 11 Issue 11 Pages 4555-4561
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract We demonstrate that electron irradiation of colloidal CdS nanorods carrying Au domains causes their evolution into AuS/Cd core/shell nanoparticles as a result of a concurrent chemical and morphological transformation. The shrinkage of the CdS nanorods and the growth of the Cd shell around the Au tips are imaged in real time, while the displacement of S atoms from the CdS nanorod to the Au domains is evidenced by high-sensitivity energy-dispersive X-ray (EDX) spectroscopy. The various nanodomains display different susceptibility to the irradiation, which results in nanoconfigurations that are very different from those obtained after thermal annealing. Such physical manipulations of colloidal nanocrystals can be exploited as a tool to access novel nanocrystal heterostructures.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington Editor
  Language Wos 000296674700009 Publication Date 2011-10-13
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1530-6984;1530-6992; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 12.712 Times cited 25 Open Access
  Notes Approved Most recent IF: 12.712; 2011 IF: 13.198
  Call Number UA @ lucian @ c:irua:93710 Serial 1814
Permanent link to this record
 

 
Author Van Aert, S.; Batenburg, J.; Van Tendeloo, S.
  Title Atomen tellen Type A3 Journal article
  Year 2011 Publication Nederlands tijdschrift voor natuurkunde (1991) Abbreviated Journal
  Volume 77 Issue 8 Pages 292-295
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT); Vision lab
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Amsterdam Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0926-4264 ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94119 Serial 164
Permanent link to this record
 

 
Author Batenburg, J.; Van Aert, S.
  Title Three-dimensional reconstruction of a nanoparticle at atomic resolution Type A2 Journal article
  Year 2011 Publication ERCIM news Abbreviated Journal
  Volume 86 Issue Pages 52
  Keywords A2 Journal article; Electron microscopy for materials research (EMAT); Vision lab
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Le Chesnay Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0926-4981 ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94120 Serial 3655
Permanent link to this record
 

 
Author Van Aert, S.
  Title Atomen in 3D : Antwerpenaren brengen atomaire structuur nanodeeltjes in beeld Type Newspaper/Magazine/blog article
  Year 2011 Publication Chemie magazine Abbreviated Journal
  Volume 7 Issue 3 Pages 9
  Keywords Newspaper/Magazine/blog article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0379-7651 ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94122 Serial 163
Permanent link to this record
 

 
Author Schryvers, D.; Van Aert, S.
  Title High-resolution visualization techniques : structural aspects Type H1 Book chapter
  Year 2012 Publication Abbreviated Journal
  Volume Issue Pages 135-149
  Keywords H1 Book chapter; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Springer Place of Publication Berlin Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN 978-3-642-20942-0 Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94124 Serial 1464
Permanent link to this record
 

 
Author Gao, J.; Lebedev, O.I.; Turner, S.; Li, Y.F.; Lu, Y.H.; Feng, Y.P.; Boullay, P.; Prellier, W.; Van Tendeloo, G.; Wu, T.
  Title Phase selection enabled formation of abrupt axial heterojunctions in branched oxide nanowires Type A1 Journal article
  Year 2012 Publication Nano letters Abbreviated Journal Nano Lett
  Volume 12 Issue 1 Pages 275-280
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Rational synthesis of nanowires via the vaporliquidsolid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored AuCu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary InSnO phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington Editor
  Language Wos 000298943100048 Publication Date 2011-12-05
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1530-6984;1530-6992; ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 12.712 Times cited 25 Open Access
  Notes Fwo Approved Most recent IF: 12.712; 2012 IF: 13.025
  Call Number UA @ lucian @ c:irua:94209 Serial 2587
Permanent link to this record
 

 
Author Biermans, E.
  Title Electron tomography : from qualitative to quantitative Type Doctoral thesis
  Year 2012 Publication Abbreviated Journal
  Volume Issue Pages
  Keywords Doctoral thesis; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94220 Serial 989
Permanent link to this record
 

 
Author Krsmanovic, R.; Bertoni, G.; Van Tendeloo, G.
  Title Structural characterization of erbium doped LAS glass ceramics obtained by glass melting technique Type A1 Journal article
  Year 2007 Publication Materials science forum Abbreviated Journal
  Volume 555 Issue Pages 377-381
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Samples of transparent glass-ceramics in the ternary system Li2O-Al2O3-SiO2 (LAS), with Er2O3 as a luminescent dopant, are investigated. The initial glass is obtained by the classical melting technique. In order to induce ceramization of the glass, TiO2 and ZrO2 are added in small amount as nucleating agents. The thermal treatments at 730 and 770 degrees C are carried out to promote formation of titanium zirconate solid solution precipitates. The spatial distribution of the precipitates in the material, their morphology, and their composition are investigated with TEM, HRTEM, HAADF-STEM, EELS and EFTEM. The results demonstrate that with the glass-melting preparation technique it is possible to achieve small nanoparticles with uniform distribution and higher number density than with the sol-gel glass preparation.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Lausanne Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0255-5476 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94673 Serial 3220
Permanent link to this record
 

 
Author Schryvers, D.; Tirry, W.; Yang, Z.
  Title Ni4Ti3 precipitates and their influence on the surrounding NiTi matrix Type P1 Proceeding
  Year 2005 Publication Abbreviated Journal
  Volume Issue Pages 205-220
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract The properties of the shape memory behaviour of Ni-rich binary NiTi are strongly dependant on the thermal history of the material. In this respect the changing of transformation temperatures of the underlying martensitic transformation and the occurrence of multiple step transformations are the most important phenomena. Part of the explanation is found in the presence of Ni4Ti3 precipitates in the B2 matrix after particular heat treatments. The formation of these precipitates changes the Ni concentration of the matrix and induces a strain field, with both of these aspects expected to be of importance. In this work atomic resolution and analytical TEM (transmission electron microscopy) techniques are used to obtain quantitative information concerning these two main features. Furthermore, the known structure of Ni4Ti3 is refined by a least squares optimization of quantitative electron diffraction data. The high-resolution TEM results show that there are strains up to 2% in the matrix surrounding the precipitates and they gradually increase until a maximum is reached when moving away from the interface. Analytical results reveal a global decrease of Ni content in the matrix when sufficient precipitates are present and a gradient in their close vicinity. The refinement of the structure shows atomic displacements, thereby increasing our understanding of the shrinking of the precipitate lattice with respect to the matrix.
  Address
  Corporate Author Thesis
  Publisher Minerals, Metals Materials Society Place of Publication Warrendale Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94759 Serial 3549
Permanent link to this record
 

 
Author van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M.
  Title Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN Type A1 Journal article
  Year 2005 Publication Springer proceedings in physics Abbreviated Journal
  Volume 107 Issue Pages 389-392
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0930-8989 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94775 Serial 3707
Permanent link to this record
 

 
Author Horvath, Z.E.; Biro, L.P.; Van Tendeloo, G.; Tondeur, C.; Bister, G.; Pierard, N.; Fonseca, A.; Nagy, J.B.
  Title Optimization of the amount of catalyst and reaction time in single wall nanotube production Type A1 Journal article
  Year 2003 Publication Diffusion and defect data : solid state data : part B : solid state phenomena Abbreviated Journal Solid State Phenom
  Volume 94 Issue Pages 271-274
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The influence of the amount of catalyst and the reaction time on the quantity and quality of catalytically grown single wall carbon nanotubes (SWNT) was investigated. The aim was to optimize some of the SWNT growth parameters using TEM and HRTEM. The thickness of catalyst layer influences the synthesis of the nanotube because the gas composition can differ between top and bottom. Microscopic investigation of the grown SWNT samples showed that the thicker the catalyst layer the lower relative nanotube content, so the deeper parts of the catalyst layer are less effective: The optimum time for the reaction was found to be 10 minutes. This may be understood assuming that nanotube growth needs an initial incubation time while the activity of the catalyst decreases steadily until the nariotube growth stops.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Vaduz Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1012-0394; 1662-9779 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94860 Serial 2490
Permanent link to this record
 

 
Author Yandouzi, M.; Pauwels, B.; Schryvers, D.; Van Swygenhoven, H.; Van Tendeloo, G.
  Title Structural characterization of nanostructured Ni3Al processed by inert gas condensation Type A1 Journal article
  Year 2003 Publication Diffusion and defect data : solid state data : part A : defect and diffusion forum Abbreviated Journal
  Volume 213 Issue 2 Pages 19-30
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract High-resolution transmission electron microscopy was performed on compacted Ni(3)Al nanostructured material prepared by the inert gas condensation technique. From electron diffraction data an incomplete L1(2) ordering of the crystallites is observed in the free particles as well as in the room temperature compacted samples. However, a completely ordered L1(2) structure with much bigger and well-defined crystallites exhibiting several defects is observed in material compacted and annealed at 773 K. Sharp crystallite boundaries as well as amorphous material and voids are observed in between crystallites in all samples, the former being dominant in the annealed material, the latter in the as-prepared one.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Aedermannsdorf Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1012-0386 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94868 Serial 3221
Permanent link to this record
 

 
Author De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
  Title Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy Type P1 Proceeding
  Year 2002 Publication Abbreviated Journal
  Volume Issue Pages 183-194
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1-56677-344-X ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:94950 Serial 344
Permanent link to this record
 

 
Author Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J.
  Title Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis Type A1 Journal article
  Year 2003 Publication Institute of physics conference series Abbreviated Journal
  Volume Issue 180 Pages 19-22
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
  Abstract Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-7503-0979-2 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95118 Serial 2710
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Author Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.
  Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
  Year 2001 Publication Institute of physics conference series Abbreviated Journal
  Volume Issue 169 Pages 481-484
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-7503-0818-4 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95163 Serial 311
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Author Weill; Chevalier; Chambon; Tressaud; Darriet; Etourneau; Van Tendeloo, G.
  Title Electron-microscopy investigation of superconducting la2cu(o, f)4+y oxyfluoride Type A1 Journal article
  Year 1993 Publication European journal of solid state and inorganic chemistry Abbreviated Journal
  Volume 30 Issue 11 Pages 1095-1108
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The fluorination of La2CuO4 can lead to different oxyfluoride compounds depending on the TF2 temperature of the fluorine gas treatment. When 150-degrees-C T(F2) less-than-or-equal-to 200-degrees-c less-than-or-equal-to 200-degrees-C a superconducting material is obtained. Previous neutron diffraction experiments as well as the EXAFS measurements at the La L(III) edge indicate that extra anions lie in an interstitial site between the two (LaO) layers. Electron diffraction patterns clearly show the existence of an incommensurate modulation due to the presence of shear planes. A second phase is also pointed out which can be obtained as a major component when the fluorination temperature is raised to 230-degrees-C. This phase which is not a superconductor crystallizes with the monoclinic symmetry.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Paris Editor
  Language Wos A1993MX13500006 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0992-4361 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 2 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:95476 Serial 954
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Author Leon, M.; Merino, J.M.; Van Tendeloo, G.
  Title Structural analysis of CuInSe2, CuInTe2 and CuInSeTe by electron microscopy and X-ray techniques Type A1 Journal article
  Year 2009 Publication Acta Microscopica Abbreviated Journal Acta Microsc
  Volume 18 Issue 2 Pages 128-138
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract A structural research of semiconductor compounds for photovoltaic applications CuInSe(2), CuInTe(2) and CuInSeTe, has been done by x-ray diffraction using the Rietveld analysis of experimental diagrams. Besides, in the CuInSeTe compound the electron diffraction and high resolution microscopy techniques have been used. All the studied compounds were polycrystals with chalcopyrite tetragonal structure, I. 42d. A model for the atomic occupancy in each compound has been proposed, and the results have been compared analyzing the Se-Te substitution effect.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0798-4545 ISBN Additional Links (up) UA library record; WoS full record; WoS citing articles
  Impact Factor 0.07 Times cited Open Access
  Notes Approved Most recent IF: 0.07; 2009 IF: NA
  Call Number UA @ lucian @ c:irua:95679 Serial 3189
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Author Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.
  Title HREM investigation of a Fe/GaN/Fe tunnel junction Type A1 Journal article
  Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England Abbreviated Journal
  Volume Issue 169 Pages 53-56
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
  Address
  Corporate Author Thesis
  Publisher IOP Publishing Place of Publication Bristol Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-7503-0818-4 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95715 Serial 1503
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Author Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J.
  Title Quantitative EFTEM study of germanium quantum dots Type P1 Proceeding
  Year 2001 Publication Abbreviated Journal
  Volume Issue Pages 345-346
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Rinton Press Place of Publication Princeton Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1-58949-003-7 ISBN Additional Links (up) UA library record; WoS full record;
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95716 Serial 2753
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