NANOlab Center of Excellence literature database -- Query Results

	NANOlab Center of Excellence literature database Home \| Show All \| Simple Search \| Advanced Search	Login Quick Search: Field: contains: ...
	361–377 of 377 records found matching your query (RSS \| history):

Select All Deselect All

<< 1 2 3 4 5 6 7 8 9 10 11 12 13 >>

List View

Citations

Details

	Records
	Author	Tinck, S.; Boullart, W.; Bogaerts, A.
	Title	Modeling Cl₂/O₂/Ar inductively coupled plasmas used for silicon etching : effects of SiO₂ chamber wall coating			Type	A1 Journal article
	Year	2011	Publication	Plasma sources science and technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	20	Issue	4	Pages	045012-045012,19
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.
	Address
	Corporate Author				Thesis
	Publisher	Institute of Physics	Place of Publication	Bristol	Editor
	Language		Wos	000295829800014	Publication Date	2011-06-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0963-0252;1361-6595;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	22	Open Access
	Notes				Approved	Most recent IF: 3.302; 2011 IF: 2.521
	Call Number	UA @ lucian @ c:irua:91045			Serial	2141
Permanent link to this record



	Author	Orlinskii, S.B.; Bogomolov, R.S.; Kiyamova, A.M.; Yavkin, B.V.; Mamin, G.M.; Turner, S.; Van Tendeloo, G.; Shiryaev, A.A.; Vlasov, I.I.; Shenderova, O.
	Title	Identification of substitutional nitrogen and surface paramagnetic centers in nanodiamond of dynamic synthesis by electron paramagnetic resonance			Type	A1 Journal article
	Year	2011	Publication	Nanoscience and nanotechnology letters	Abbreviated Journal	Nanosci Nanotech Let
	Volume	3	Issue	1	Pages	63-67
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Production of nanodiamond particles containing substitutional nitrogen is important for a wide variety of advanced applications. In the current work nanodiamond particles synthesized from a mixture of graphite and hexogen were analyzed to determine the presence of substitutional nitrogen using pulsed electron paramagnetic resonance (EPR) spectroscopy. Nitrogen paramagnetic centers in the amount of 1.2 ppm have been identified. The spin relaxation characteristics for both nitrogen and surface defects are also reported. A new approach for efficient depletion of the strong non-nitrogen EPR signal in nanodiamond material by immersing nanodiamond particles into ice matrix is suggested. This approach allows an essential decrease of the spin relaxation time of the dominant non-nitrogen defects, while preserving the substitutional nitrogen spin relaxation time.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000293211200012	Publication Date	2011-09-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1941-4900;1941-4919;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.889	Times cited	14	Open Access
	Notes				Approved	Most recent IF: 1.889; 2011 IF: 0.528
	Call Number	UA @ lucian @ c:irua:91943			Serial	1548
Permanent link to this record



	Author	Potgieter-Vermaak, S.S.; Mmari, A.; Van Grieken, R.; McCrindle, R.I.; Potgieter, J.H.
	Title	Degradation of galvanised iron roofing material in Tanzania by atmospheric corrosion			Type	A1 Journal article
	Year	2011	Publication	Corrosion engineering science and technology	Abbreviated Journal
	Volume	46	Issue	5	Pages	642-650
	Keywords	A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
	Abstract	Galvanised iron is popular in many applications, particular as a roofing material. However, just like other materials, especially metallic ones, it is prone to degradation by corrosion. In this particular study, the degradation of galvanised roof sheets was investigated at a coastal, urban and rural site in Tanzania, Africa. Samples were exposed to various outdoor environments over a period of 3 years. In addition, some accelerated laboratory investigations were conducted in different simulated air pollution environments in an artificial corrosion chamber constructed for this purpose to supplement the outdoor exposure tests. It was found that the combination of the tropical climate and increasing air pollution due to industrial development in the capital Dar-es-Salaam resulted in substantial atmospheric corrosion of the roof sheets, which eventually leads to failure and the necessity for replacement. The rural site had the lowest degree of atmospheric corrosion as expected. A combination of different corrosion products was identified as a result of the atmospheric corrosion by Raman and EDX analyses. The information gained from this investigation could be utilised to construct more durable structures requiring less frequent replacement and maintenance in future.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000294421100008	Publication Date	2010-04-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1478-422x	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:92094			Serial	7758
Permanent link to this record



	Author	Talgorn, E.; Gao, Y.; Aerts, M.; Kunneman, L.T.; Schins, J.M.; Savenije, T.J.; van Huis, M.A.; van der Zant, H.S.J.; Houtepen, A.J.; Siebbeles, L.D.A.
	Title	Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids			Type	A1 Journal article
	Year	2011	Publication	Nature nanotechnology	Abbreviated Journal	Nat Nanotechnol
	Volume	6	Issue	11	Pages	733-739
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electronhole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000296737300012	Publication Date	2011-09-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1748-3387;1748-3395;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	38.986	Times cited	129	Open Access
	Notes				Approved	Most recent IF: 38.986; 2011 IF: 27.270
	Call Number	UA @ lucian @ c:irua:93296			Serial	3813
Permanent link to this record



	Author	Huyskens, C.; Lenaerts, S.; Brauns, E.; Diels, L.; de Wever, H.
	Title	Study of (ir)reversible fouling in MBRs under various operating conditions using new on-line fouling sensor			Type	A1 Journal article
	Year	2011	Publication	Separation and purification technology	Abbreviated Journal	Sep Purif Technol
	Volume	81	Issue	2	Pages	208-215
	Keywords	A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
	Abstract	In this study, a new fouling sensor was validated under different conditions of hydraulic (HRT) and sludge retention time (SRT). The MBR-VFM (membrane bioreactor-VITO Fouling Measurement) allows the simultaneous determination of the physically reversible and irreversible fouling potential of a mixed liquor during a single crossflow filtration test. In accordance with the on-line filtration behavior, the measured reversible and irreversible fouling propensities differed significantly between MBRs operated at different combinations of HRT-SRT. Moreover, a significant negative correlation was found between the on-line permeability and the reversible and irreversible fouling propensity measured by the MBR-VFM. This corresponded to observations made on membrane recovery after physical or chemical cleaning actions. Higher reversible and irreversible fouling were observed at lower HRT, presumably as a consequence of increased concentrations of foulants present. The effect of SRT was much smaller and restricted to the reversible fouling component. Possible explanations for the increased fouling at prolonged SRT are the higher sludge and colloid concentration and the smaller floc size. It can be concluded that the MBR-VFM is a useful tool to monitor fluctuations in a mixed liquors (ir)reversible fouling potential and can contribute to a deeper understanding of the occurring fouling phenomena.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000296108500012	Publication Date	2011-08-01
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1383-5866	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.359	Times cited	15	Open Access
	Notes	; ;			Approved	Most recent IF: 3.359; 2011 IF: 2.921
	Call Number	UA @ admin @ c:irua:93410			Serial	5992
Permanent link to this record



	Author	Ray, S.; Kolen'ko, Y.V.; Kovnir, K.A.; Lebedev, O.I.; Turner, S.; Chakraborty, T.; Erni, R.; Watanabe, T.; Van Tendeloo, G.; Yoshimura, M.; Itoh, M.
	Title	Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals			Type	A1 Journal article
	Year	2012	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	23	Issue	2	Pages	025702,1-025702,10
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}_{\mathrm {(O)}}
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000298409000011	Publication Date	2011-12-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	19	Open Access
	Notes	Esteem 026019; Fwo			Approved	Most recent IF: 3.44; 2012 IF: 3.842
	Call Number	UA @ lucian @ c:irua:93636			Serial	614
Permanent link to this record



	Author	Helm, M.; Hilber, W.; Fromherz, T.; Peeters, F.M.; Alavi, K.; Pathak, R.N.
	Title	Bloch and localized electrons in semiconductor superlattices			Type	A1 Journal article
	Year	1994	Publication	Semiconductor science and technology	Abbreviated Journal	Semicond Sci Tech
	Volume	9	Issue		Pages	1989-1993
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	A1994PT27100023	Publication Date	2002-08-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0268-1242;1361-6641;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.19	Times cited	1	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:9370			Serial	244
Permanent link to this record



	Author	Mattauch, S.; Heger, G.; Michel, K.H.
	Title	High resolution neutron and X-ray diffraction studies as a function of temperature and electric field of the ferroelectric phase transition of RDP			Type	A1 Journal article
	Year	2004	Publication	Crystal research and technology	Abbreviated Journal	Cryst Res Technol
	Volume	39	Issue	12	Pages	1027-1054
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	Neutron and high resolution X-ray diffraction investigations on perfect single crystals of RbH2PO4 (RDP), a hydrogen bonded ferroelectric of KDP type are reported. The results of crystal structure analysis from diffraction data, below and above the paraelectric – ferroelectric phase transition, support a disorder – order character Of [PO4H2](-)-groups. The tetragonal symmetry of the paraelectric phase with the double well potential of the hydrogen atoms obtained by diffraction, results simply from a time-space average of orthorhombic symmetry. According to the group – subgroup relation between the tetragonal space group 142d and the orthorhombic Fdd2 a short range order of ferroelectric clusters in the tetragonal phase is observed. With decreasing temperature the ferroelectric clusters increase and the long range interaction between their local polarisation vectors leads to the formation of lamellar ferroelectric domains with alternating polarisation directions at T-C = 147 K. From the high resolution X-ray data it is concluded that below T-C the ferroelastic strain in the (a,b)-plane leads to micro-angle grain boundaries at the domain walls. The tilt angle is enhanced by an applied electric field parallel to the ferroelectric axis. The resulting dislocations at the domain walls persist in the paraelectric phase leading to a memory effect for the arrangement of twin lamellae. With increased electric field the phase transition temperature T-C is decreased.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Berlin	Editor
	Language		Wos	000225681100001	Publication Date	2004-11-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0232-1300;1521-4079;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1	Times cited	12	Open Access
	Notes				Approved	Most recent IF: 1; 2004 IF: 0.770
	Call Number	UA @ lucian @ c:irua:94785			Serial	1459
Permanent link to this record



	Author	Kindratenko, V.V.; van Espen, P.J.M.; Treiger, B.A.; Van Grieken, R.E.
	Title	Fractal dimensional classification of aerosol particles by computer-controlled scanning electron microscopy			Type	A1 Journal article
	Year	1994	Publication	Environmental science and technology	Abbreviated Journal
	Volume	28	Issue		Pages	2197-2202
	Keywords	A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1994PP82900033	Publication Date	2007-05-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0013-936x; 1520-5851	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ admin @ c:irua:9497			Serial	7983
Permanent link to this record



	Author	Kalitzova, M.; Vlakhov, E.; Marinov, Y.; Gesheva, K.; Ignatova, V.A.; Lebedev, O.; Muntele, C.; Gijbels, R.
	Title	Effect of high-frequency electromagnetic field on Te⁺-implanted (001) Si</tex>			Type	A1 Journal article
	Year	2004	Publication	Vacuum: the international journal and abstracting service for vacuum science and technology	Abbreviated Journal	Vacuum
	Volume	76	Issue	2-3	Pages	325-328
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	The analysis of high-frequency electromagnetic field (HFEMF) effects on the microstructure and electrical properties of Te+ implanted (0 0 1) Si is reported. Cross-sectional high-resolution transmission electron microscopy (XHRTEM) demonstrates the formation of Te nanoclusters (NCs) embedded in the Si layer amorphized by implantation (a-Si) at fluences greater than or equal to 1 x 10(16) cm(-2). Post-implantation treatment with 0.45 MHz HFEMF leads to enlargement of Te NCs, their diffusion and accumulation at the a-Si surface and formation of laterally connected extended tellurium structures above the percolation threshold, appearing at an ion fluence of 1 x 10(17) cm(-2). AC electrical conductivity measurements show nearly four orders of magnitude decrease of impedance resistivity in this case, which is in good agreement with the results of our structural studies. The results obtained are discussed in terms of the two-phase isotropic spinodal structure. (C) 2004 Elsevier Ltd. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Oxford	Editor
	Language		Wos	000224890100048	Publication Date	2004-08-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0042-207X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.53	Times cited	2	Open Access
	Notes				Approved	Most recent IF: 1.53; 2004 IF: 0.902
	Call Number	UA @ lucian @ c:irua:95105			Serial	814
Permanent link to this record



	Author	Tan, H.; Lebedev, O.I.; McLaughlin, A.C.; Van Tendeloo, G.
	Title	The superstructure and superconductivity of Ru1222 based RuSr₂Gd_2-x-yY_yCe_xCu₂O_10-\delta compounds			Type	A1 Journal article
	Year	2010	Publication	Superconductor science and technology	Abbreviated Journal	Supercond Sci Tech
	Volume	23	Issue	11	Pages	115013-115013,8
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	For the first time, the local structure and physical properties of Ru1222 based compounds (RuSr(2)Gd(1.4)Ce(0.6)Cu(2)O(10-delta) and RuSr(2)Gd(1.8-x)Y(0.2)CexCu(2)O(10) (x = 0.90-0.55)) have been investigated and analyzed together on the very same compounds. The Ru1222 superstructure was confirmed by TEM at a local scale and was suggested to have an orthorhombic symmetry with space group Aba2 and lattice parameters a(s) similar or equal to root 2a, b(s) similar or equal to root 2a and c(s) = c. This new Ru1222 superstructure distortion from tetragonal symmetry is proposed to have a positive correlation with the superconductivity variation of these compounds. The more the distortion towards orthorhombic symmetry, the higher the critical superconducting temperature these compounds can achieve. The T(c)(0) of RuSr(2)Gd(1.8-x)Y(0.2)Ce(x)Cu(2)O(10-delta) (x = 0.85-0.55) increases monotonically from 4 to 16 K when x decreases from 0.85 to 0.70, then RuSr(2)Gd(2)Cu(2)O(8) defects emerge and the T(c) decreases with decreasing x. Ru1212 defects are observed to intergrow epitaxially with the Ru1222 structure as lamellas along the c-axis in RuSr(2)Gd(1.4)Ce(0.6)Cu(2)O(10-delta). Although Ru1212 is a superconductor, the intergrowth severely restrains its superconductivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000284308000013	Publication Date	2010-10-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048;1361-6668;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.878	Times cited	1	Open Access
	Notes	Fwo; Esteem 026019			Approved	Most recent IF: 2.878; 2010 IF: 2.402
	Call Number	UA @ lucian @ c:irua:95553			Serial	3385
Permanent link to this record



	Author	Wu, Z.; Zhang, Z.Z.; Chang, K.; Peeters, F.M.
	Title	Quantum tunneling through graphene nanorings			Type	A1 Journal article
	Year	2010	Publication	Nanotechnology	Abbreviated Journal	Nanotechnology
	Volume	21	Issue	18	Pages	185201
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	We investigate theoretically quantum transport through graphene nanorings in the presence of a perpendicular magnetic field. Our theoretical results demonstrate that the graphene nanorings behave like a resonant tunneling device, contrary to the Aharonov-Bohm oscillations found in conventional semiconductor rings. The resonant tunneling can be tuned by the Fermi energy, the size of the central part of the graphene nanorings and the external magnetic field.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Bristol	Editor
	Language		Wos	000276672100005	Publication Date	2010-04-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484;1361-6528;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.44	Times cited	34	Open Access
	Notes	; This work is partly supported by the NSFC, the project from the Chinese Academy of Sciences, the bilateral project between China and Sweden, the Flemish Science Foundation (FWLO-Vl) and the Belgium Science Policy (IAP). ;			Approved	Most recent IF: 3.44; 2010 IF: 3.652
	Call Number	UA @ lucian @ c:irua:95614			Serial	2796
Permanent link to this record



	Author	Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
	Title	Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope			Type	A1 Journal article
	Year	1995	Publication	Materials science and technology	Abbreviated Journal	Mater Sci Tech-Lond
	Volume	11	Issue	11	Pages	1194-1202
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
	Address
	Corporate Author				Thesis
	Publisher	Inst Materials	Place of Publication	London	Editor
	Language		Wos	A1995TQ95100016	Publication Date	2014-01-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0267-0836;1743-2847;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.995	Times cited	7	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95911			Serial	2654
Permanent link to this record



	Author	Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K.
	Title	Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates			Type	A1 Journal article
	Year	2012	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	30	Issue	1	Pages	01a127-01a127,10
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090]
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000298992800027	Publication Date	2011-12-02
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	41	Open Access
	Notes				Approved	Most recent IF: 1.374; 2012 IF: 1.432
	Call Number	UA @ lucian @ c:irua:96253			Serial	2818
Permanent link to this record



	Author	Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A.
	Title	The effect of F₂ attachment by low-energy electrons on the electron behaviour in an Ar/CF₄ inductively coupled plasma			Type	A1 Journal article
	Year	2012	Publication	Plasma sources science and technology	Abbreviated Journal	Plasma Sources Sci T
	Volume	21	Issue	2	Pages	025008-025008,13
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	The electron behaviour in an Ar/CF4 inductively coupled plasma is investigated by a Langmuir probe and a hybrid model. The simulated and measured results include electron density, temperature and electron energy distribution function for different values of Ar/CF4 ratio, coil power and gas pressure. The hybrid plasma equipment model simulations show qualitative agreement with experiment. The effect of F2 electron attachment on the electron behaviour is explored by comparing two sets of data based on different F atom boundary conditions. It is demonstrated that electron attachment at F2 molecules is responsible for the depletion of low-energy electrons, causing a density decrease as well as a temperature increase when CF4 is added to an Ar plasma.
	Address
	Corporate Author				Thesis
	Publisher	Institute of Physics	Place of Publication	Bristol	Editor
	Language		Wos	000302779400022	Publication Date	2012-03-12
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0963-0252;1361-6595;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.302	Times cited	23	Open Access
	Notes				Approved	Most recent IF: 3.302; 2012 IF: 2.515
	Call Number	UA @ lucian @ c:irua:96549			Serial	841
Permanent link to this record



	Author	Neyts, E.C.
	Title	PECVD growth of carbon nanotubes : from experiment to simulation			Type	A1 Journal article
	Year	2012	Publication	Journal of vacuum science and technology: B: micro-electronics processing and phenomena	Abbreviated Journal
	Volume	30	Issue	3	Pages	030803-030803,17
	Keywords	A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Nanostructured carbon materials show a tremendous variety in atomic structure, morphology, properties, and applications. As all properties are ultimately determined by the structure of the material, a thorough understanding of the growth mechanisms that give rise to the particular structure is critical. On many occasions, it has been shown that plasma enhanced growth can be strongly beneficial. This review will describe the authors current understanding of plasma enhanced growth of carbon nanotubes, the prototypical example of nanostructured carbon materials, as obtained from experiments, simulations, and modeling. Specific emphasis is put on where experiments and computational approaches correspond, and where they differ. Also, the current status on simulating PECVD growth of some other carbon nanomaterials is reviewed, including amorphous carbon, graphene, and metallofullerenes. Finally, computational challenges with respect to the simulation of PECVD growth are identified.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000305042000010	Publication Date	2012-04-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2166-2746;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	42	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:97166			Serial	2570
Permanent link to this record



	Author	Bittencourt, C.; Hitchock, A.P.; Ke, X.; Van Tendeloo, G.; Ewels, C.P.; Guttmann, P.
	Title	X-ray absorption spectroscopy by full-field X-ray microscopy of a thin graphite flake: Imaging and electronic structure via the carbon K-edge			Type	A1 Journal article
	Year	2012	Publication	Beilstein journal of nanotechnology	Abbreviated Journal	Beilstein J Nanotech
	Volume	3	Issue		Pages	345-350
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	We demonstrate that near-edge X-ray-absorption fine-structure spectra combined with full-field transmission X-ray microscopy can be used to study the electronic structure of graphite flakes consisting of a few graphene layers. The flake was produced by exfoliation using sodium cholate and then isolated by means of density-gradient ultracentrifugation. An image sequence around the carbon K-edge, analyzed by using reference spectra for the in-plane and out-of-plane regions of the sample, is used to map and spectrally characterize the flat and folded regions of the flake. Additional spectral features in both π and σ regions are observed, which may be related to the presence of topological defects. Doping by metal impurities that were present in the original exfoliated graphite is indicated by the presence of a pre-edge signal at 284.2 eV.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000303243400001	Publication Date	2012-04-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2190-4286;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.127	Times cited	15	Open Access
	Notes				Approved	Most recent IF: 3.127; 2012 IF: 2.374
	Call Number	UA @ lucian @ c:irua:97703			Serial	3924
Permanent link to this record