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Author |
Shimizu, K.; Habazaki, H.; Bender, H.; Gijbels, R. |
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Title |
The dawn of surface analysis that stands by the side users: ultra-thin film analysis by rf-GDOES |
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A3 Journal article |
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Year |
2004 |
Publication |
Engineering materials |
Abbreviated Journal |
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Volume |
52 |
Issue |
9 |
Pages |
97-101 |
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Keywords |
A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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0000-00-00 |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:51978 |
Serial |
607 |
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Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
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Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
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Volume |
164 |
Issue |
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Pages |
443-446 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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London |
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Wos |
000166835300094 |
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0000-00-00 |
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ISSN |
0305-2346 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
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Author |
Vanhellemont, J.; Bender, H.; van Landuyt, J. |
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Title |
TEM studies of processed Si device materials |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
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Volume |
157 |
Issue |
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Pages |
393-402 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale. |
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London |
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000071954600079 |
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0000-00-00 |
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0305-2346 |
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Additional Links |
UA library record; WoS full record; |
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Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21430 |
Serial |
3486 |
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Author |
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
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Title |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
415-418 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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0000-00-00 |
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0-7503-0818-4; 0951-3248 |
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Additional Links |
UA library record; WoS full record; |
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Notes |
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Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:103432 |
Serial |
877 |
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